Methods And Systems For Semiconductor Metrology Based On Polychromatic Soft X-Ray Diffraction

    公开(公告)号:US20190017946A1

    公开(公告)日:2019-01-17

    申请号:US16030849

    申请日:2018-07-09

    Abstract: Methods and systems for performing measurements of semiconductor structures based on high-brightness, polychromatic, reflective small angle x-ray scatterometry (RSAXS) metrology are presented herein. RSAXS measurements are performed over a range of wavelengths, angles of incidence, and azimuth angles with small illumination beam spot size, simultaneously or sequentially. In some embodiments, RSAXS measurements are performed with x-ray radiation in the soft x-ray (SXR) region at grazing angles of incidence in the range of 5-20 degrees. In some embodiments, the x-ray illumination source size is 10 micrometers or less, and focusing optics project the source area onto a wafer with a demagnification factor of 0.2 or less, enabling an incident x-ray illumination spot size of less than two micrometers. In another aspect, active focusing optics project programmed ranges of illumination wavelengths, angles of incidence, and azimuth angles, or any combination thereof, onto a metrology area, either simultaneously or sequentially.

    Spectral reflectometry for in-situ process monitoring and control

    公开(公告)号:US10438825B2

    公开(公告)日:2019-10-08

    申请号:US15688751

    申请日:2017-08-28

    Abstract: Methods and systems for performing in-situ, selective spectral reflectometry (SSR) measurements of semiconductor structures disposed on a wafer are presented herein. Illumination light reflected from a wafer surface is spatially imaged. Signals from selected regions of the image are collected and spectrally analyzed, while other portions of the image are discarded. In some embodiments, a SSR includes a dynamic mirror array (DMA) disposed in the optical path at or near a field plane conjugate to the surface of the semiconductor wafer under measurement. The DMA selectively blocks the undesired portion of wafer image. In other embodiments, a SSR includes a hyperspectral imaging system including a plurality of spectrometers each configured to collect light from a spatially distinct area of a field image conjugate to the wafer surface. Selected spectral signals associated with desired regions of the wafer image are selected for analysis.

    Particle and chemical control using tunnel flow

    公开(公告)号:US09759912B2

    公开(公告)日:2017-09-12

    申请号:US14034273

    申请日:2013-09-23

    CPC classification number: G02B27/0006

    Abstract: An apparatus for contaminant control, having: a first optical assembly including: a first light homogenizer tunnel with: a first end connected to an extreme ultra-violet light source, a second end in communication with a destination chamber, a first enclosed space, and, a first gas input arranged to introduce a first gas such that the first gas flows in a first direction toward the first end and in a second direction toward the second end. The apparatus alternately having: a second optical assembly including: a second light homogenizer tunnel with: a third end connected to an extreme ultra-violet light source, a fourth end in communication with a destination chamber, a second enclosed space, a diffusion barrier tube including: a fifth end facing the fourth end and a sixth end in communication with a destination chamber, and a second gas input between the second light homogenizer tunnel and the diffusion tube.

    Phase Grating For Mask Inspection System
    4.
    发明申请
    Phase Grating For Mask Inspection System 有权
    相位光栅面罩检测系统

    公开(公告)号:US20140131586A1

    公开(公告)日:2014-05-15

    申请号:US13786049

    申请日:2013-03-05

    Abstract: Spectral Purity Filters, or SPFs, are disclosed. Such SPFs are designed to block out the 1030 nm drive laser and other undesired out of band light in a EUV mask inspection system. Different phase grating configurations for near normal incidence and grazing incidence are provided in the present disclosure and are configured specifically for EUV mask inspection.

    Abstract translation: 公开了光谱纯化过滤器或SPF。 这样的SPF被设计为在EUV掩模检查系统中阻挡1030nm驱动激光器和其它不期望的带外光。 在本公开内容中提供了用于近似法向入射和掠入射的不同相位光栅配置,并且被专门用于EUV掩模检查。

    PARTICLE AND CHEMICAL CONTROL USING TUNNEL FLOW
    5.
    发明申请
    PARTICLE AND CHEMICAL CONTROL USING TUNNEL FLOW 有权
    使用隧道流的颗粒和化学控制

    公开(公告)号:US20140085724A1

    公开(公告)日:2014-03-27

    申请号:US14034273

    申请日:2013-09-23

    CPC classification number: G02B27/0006

    Abstract: An apparatus for contaminant control, having: a first optical assembly including: a first light homogenizer tunnel with: a first end connected to an extreme ultra-violet light source, a second end in communication with a destination chamber, a first enclosed space, and, a first gas input arranged to introduce a first gas such that the first gas flows in a first direction toward the first end and in a second direction toward the second end. The apparatus alternately having: a second optical assembly including: a second light homogenizer tunnel with: a third end connected to an extreme ultra-violet light source, a fourth end in communication with a destination chamber, a second enclosed space, a diffusion barrier tube including: a fifth end facing the fourth end and a sixth end in communication with a destination chamber, and a second gas input between the second light homogenizer tunnel and the diffusion tube.

    Abstract translation: 一种用于污染物控制的装置,具有:第一光学组件,包括:第一光均化器隧道,其具有:连接到极紫外光源的第一端,与目的地室连通的第二端,第一封闭空间,以及 第一气体输入装置,其被布置成引入第一气体,使得第一气体沿第一方向朝向第一端部流动,并沿第二方向朝向第二端部流动。 所述装置交替地具有:第二光学组件,其包括:第二光均化器隧道,其具有连接到极紫外光源的第三端,与目的地室连通的第四端,第二封闭空间,扩散阻挡管 包括:面向第四端的第五端和与目的地室连通的第六端,以及在第二光均化器通道和扩散管之间的第二气体输入。

    Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction

    公开(公告)号:US11333621B2

    公开(公告)日:2022-05-17

    申请号:US16030849

    申请日:2018-07-09

    Abstract: Methods and systems for performing measurements of semiconductor structures based on high-brightness, polychromatic, reflective small angle x-ray scatterometry (RSAXS) metrology are presented herein. RSAXS measurements are performed over a range of wavelengths, angles of incidence, and azimuth angles with small illumination beam spot size, simultaneously or sequentially. In some embodiments, RSAXS measurements are performed with x-ray radiation in the soft x-ray (SXR) region at grazing angles of incidence in the range of 5-20 degrees. In some embodiments, the x-ray illumination source size is 10 micrometers or less, and focusing optics project the source area onto a wafer with a demagnification factor of 0.2 or less, enabling an incident x-ray illumination spot size of less than two micrometers. In another aspect, active focusing optics project programmed ranges of illumination wavelengths, angles of incidence, and azimuth angles, or any combination thereof, onto a metrology area, either simultaneously or sequentially.

    APPARATUS AND METHOD FOR SYNCHRONIZING SAMPLE STAGE MOTION WITH A TIME DELAY INTEGRATION CHARGE-COUPLE DEVICE IN A SEMICONDUCTOR INSPECTION TOOL
    8.
    发明申请
    APPARATUS AND METHOD FOR SYNCHRONIZING SAMPLE STAGE MOTION WITH A TIME DELAY INTEGRATION CHARGE-COUPLE DEVICE IN A SEMICONDUCTOR INSPECTION TOOL 有权
    在半导体检测工具中与时间延迟积分充电耦合器件同步采样阶段运动的装置和方法

    公开(公告)号:US20130270444A1

    公开(公告)日:2013-10-17

    申请号:US13862148

    申请日:2013-04-12

    CPC classification number: G01N21/9501 G01N21/956 G01N2021/95676

    Abstract: A method for synchronizing sample stage motion with a time delay integration (TDI) charge-couple device (CCD) in a semiconductor inspection tool, including: measuring a lateral position of a stage holding a sample being inspected; measuring a vertical position of the stage; determining a corrected lateral position of an imaged pixel of the sample based on the measured lateral and vertical positions; and synchronizing charge transfer of the TDI CCD with the corrected lateral position of the imaged pixel.

    Abstract translation: 一种用于在半导体检测工具中使样本台运动与时间延迟积分(TDI)电荷耦合器件(CCD)同步的方法,包括:测量保持被检样品的台的横向位置; 测量舞台的垂直位置; 基于所测量的横向和垂直位置确定样本的成像像素的校正横向位置; 以及使所述TDI CCD的电荷转移与被成像像素的校正横向位置同步。

    Spectral Reflectometry For In-Situ Process Monitoring And Control

    公开(公告)号:US20180061691A1

    公开(公告)日:2018-03-01

    申请号:US15688751

    申请日:2017-08-28

    CPC classification number: H01L21/67253 H01L22/10 H01L22/12

    Abstract: Methods and systems for performing in-situ, selective spectral reflectometry (SSR) measurements of semiconductor structures disposed on a wafer are presented herein. Illumination light reflected from a wafer surface is spatially imaged. Signals from selected regions of the image are collected and spectrally analyzed, while other portions of the image are discarded. In some embodiments, a SSR includes a dynamic mirror array (DMA) disposed in the optical path at or near a field plane conjugate to the surface of the semiconductor wafer under measurement. The DMA selectively blocks the undesired portion of wafer image. In other embodiments, a SSR includes a hyperspectral imaging system including a plurality of spectrometers each configured to collect light from a spatially distinct area of a field image conjugate to the wafer surface. Selected spectral signals associated with desired regions of the wafer image are selected for analysis.

    Apparatus and method for synchronizing sample stage motion with a time delay integration charge-couple device in a semiconductor inspection tool
    10.
    发明授权
    Apparatus and method for synchronizing sample stage motion with a time delay integration charge-couple device in a semiconductor inspection tool 有权
    在半导体检测工具中使样品台运动与时间延迟积分电荷耦合器件同步的装置和方法

    公开(公告)号:US08772731B2

    公开(公告)日:2014-07-08

    申请号:US13862148

    申请日:2013-04-12

    CPC classification number: G01N21/9501 G01N21/956 G01N2021/95676

    Abstract: A method for synchronizing sample stage motion with a time delay integration (TDI) charge-couple device (CCD) in a semiconductor inspection tool, including: measuring a lateral position of a stage holding a sample being inspected; measuring a vertical position of the stage; determining a corrected lateral position of an imaged pixel of the sample based on the measured lateral and vertical positions; and synchronizing charge transfer of the TDI CCD with the corrected lateral position of the imaged pixel.

    Abstract translation: 一种用于在半导体检测工具中使样本台运动与时间延迟积分(TDI)电荷耦合器件(CCD)同步的方法,包括:测量保持被检样品的台的横向位置; 测量舞台的垂直位置; 基于所测量的横向和垂直位置确定样本的成像像素的校正横向位置; 以及使所述TDI CCD的电荷转移与被成像像素的校正横向位置同步。

Patent Agency Ranking