Spectral reflectometry for in-situ process monitoring and control

    公开(公告)号:US10438825B2

    公开(公告)日:2019-10-08

    申请号:US15688751

    申请日:2017-08-28

    IPC分类号: H01L21/67 H01L21/66

    摘要: Methods and systems for performing in-situ, selective spectral reflectometry (SSR) measurements of semiconductor structures disposed on a wafer are presented herein. Illumination light reflected from a wafer surface is spatially imaged. Signals from selected regions of the image are collected and spectrally analyzed, while other portions of the image are discarded. In some embodiments, a SSR includes a dynamic mirror array (DMA) disposed in the optical path at or near a field plane conjugate to the surface of the semiconductor wafer under measurement. The DMA selectively blocks the undesired portion of wafer image. In other embodiments, a SSR includes a hyperspectral imaging system including a plurality of spectrometers each configured to collect light from a spatially distinct area of a field image conjugate to the wafer surface. Selected spectral signals associated with desired regions of the wafer image are selected for analysis.

    Spectral Reflectometry For In-Situ Process Monitoring And Control

    公开(公告)号:US20180061691A1

    公开(公告)日:2018-03-01

    申请号:US15688751

    申请日:2017-08-28

    IPC分类号: H01L21/67 H01L21/66

    摘要: Methods and systems for performing in-situ, selective spectral reflectometry (SSR) measurements of semiconductor structures disposed on a wafer are presented herein. Illumination light reflected from a wafer surface is spatially imaged. Signals from selected regions of the image are collected and spectrally analyzed, while other portions of the image are discarded. In some embodiments, a SSR includes a dynamic mirror array (DMA) disposed in the optical path at or near a field plane conjugate to the surface of the semiconductor wafer under measurement. The DMA selectively blocks the undesired portion of wafer image. In other embodiments, a SSR includes a hyperspectral imaging system including a plurality of spectrometers each configured to collect light from a spatially distinct area of a field image conjugate to the wafer surface. Selected spectral signals associated with desired regions of the wafer image are selected for analysis.