知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

2238 records (took 0.03 seconds)

    Device-like metrology targets
    3.
    发明授权
    Device-like metrology targets 有权

    公开(公告)号：US11709433B2

    公开(公告)日：2023-07-25

    申请号：US17689934

    申请日：2022-03-08

    Applicant: KLA-Tencor Corporation

    Inventor： Vladimir Levinski ,  Amnon Manassen ,  Eran Amit ,  Nuriel Amir ,  Liran Yerushalmi ,  Amit Shaked

    IPC: G03F7/20 ,  G03F7/00

    CPC classification number: G03F7/70625 ,  G03F7/70633 ,  G03F7/70683

    Abstract: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

    Multimode defect classification in semiconductor inspection
    4.
    发明授权
    Multimode defect classification in semiconductor inspection 有权

    公开(公告)号：US11668655B2

    公开(公告)日：2023-06-06

    申请号：US16272528

    申请日：2019-02-11

    Applicant: KLA-Tencor Corporation

    Inventor： Vaibhav Gaind ,  Grace H. Chen ,  Amrit Poudel ,  Mark S. Wang

    IPC: G01N21/88 ,  G01N21/95

    CPC classification number: G01N21/8851 ,  G01N21/9501 ,  G01N2021/8874 ,  G01N2021/8887

    Abstract: A semiconductor-inspection tool scans a semiconductor die using a plurality of optical modes. A plurality of defects on the semiconductor die are identified based on results of the scanning. Respective defects of the plurality of defects correspond to respective pixel sets of the semiconductor-inspection tool. The scanning fails to resolve the respective defects. The results include multi-dimensional data based on pixel intensity for the respective pixel sets, wherein each dimension of the multi-dimensional data corresponds to a distinct mode of the plurality of optical modes. A discriminant function is applied to the results to transform the multi-dimensional data for the respective pixel sets into respective scores. Based at least in part on the respective scores, the respective defects are divided into distinct classes.

    System and method for monitoring parameters of a semiconductor factory automation system
    6.
    发明授权
    System and method for monitoring parameters of a semiconductor factory automation system 有权

    公开(公告)号：US11569138B2

    公开(公告)日：2023-01-31

    申请号：US15048676

    申请日：2016-02-19

    Applicant: KLA-Tencor Corporation

    Inventor： Mor Azarya ,  Michael D. Brain ,  Ami Appelbaum ,  Shai Mark ,  Arie Hoffman

    IPC: G05B19/418 ,  H01L21/66 ,  H01L21/67

    Abstract: A system for monitoring one or more conditions of an automation system of a semiconductor factory includes one or more instrumented substrates, one or more sealable containers and one or more system servers. The one or more instrumented substrates include one or more sensors. The one or more sensors measure one or more conditions of the one or more instrumented substrates as the one or more sealable containers transport the one or more instrumented substrates through the semiconductor factory. The one or more sealable containers also receive sensor data from the one or more sensors included on the one or more instrumented substrates. The one or more system servers are configured to receive the sensor data from the one or more sealable containers. The one or more servers are configured to identify one or more deviations in the measured one or more conditions.

    Dynamic amelioration of misregistration measurement
    7.
    发明授权
    Dynamic amelioration of misregistration measurement 有权

    公开(公告)号：US11551980B2

    公开(公告)日：2023-01-10

    申请号：US16470886

    申请日：2019-05-19

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Roie Volkovich ,  Anna Golotsvan ,  Eyal Abend

    IPC: H01L21/66 ,  H01L21/67 ,  G01B11/27

    Abstract: A dynamic misregistration measurement amelioration method including taking at least one misregistration measurement at multiple sites on a first semiconductor device wafer, which is selected from a batch of semiconductor device wafers intended to be identical, analyzing each of the misregistration measurements, using data from the analysis of each of the misregistration measurements to determine ameliorated misregistration measurement parameters at each one of the multiple sites, thereafter ameliorating misregistration metrology tool setup for ameliorated misregistration measurement at the each one of the multiple sites, thereby generating an ameliorated misregistration metrology tool setup and thereafter measuring misregistration at multiple sites on a second semiconductor device wafer, which is selected from the batch of semiconductor device wafers intended to be identical, using the ameliorated misregistration metrology tool setup.

    Reduction or elimination of pattern placement error in metrology measurements
    8.
    发明授权
    Reduction or elimination of pattern placement error in metrology measurements 有权

    公开(公告)号：US11537043B2

    公开(公告)日：2022-12-27

    申请号：US17161645

    申请日：2021-01-28

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Yoel Feler ,  Vladimir Levinski ,  Roel Gronheid ,  Sharon Aharon ,  Evgeni Gurevich ,  Anna Golotsvan ,  Mark Ghinovker

    IPC: G03F1/84 ,  G03F7/20 ,  G01N21/00 ,  G03F1/44 ,  G06F30/39 ,  G03F1/26

    Abstract: Metrology methods and targets are provided for reducing or eliminating a difference between a device pattern position and a target pattern position while maintaining target printability, process compatibility and optical contrast—in both imaging and scatterometry metrology. Pattern placement discrepancies may be reduced by using sub-resolved assist features in the mask design which have a same periodicity (fine pitch) as the periodic structure and/or by calibrating the measurement results using PPE (pattern placement error) correction factors derived by applying learning procedures to specific calibration terms, in measurements and/or simulations. Metrology targets are disclosed with multiple periodic structures at the same layer (in addition to regular target structures), e.g., in one or two layers, which are used to calibrate and remove PPE, especially when related to asymmetric effects such as scanner aberrations, off-axis illumination and other error sources.

Patent Agency Ranking