Abstract:
A system for detecting defects on a semiconductor sample includes an illumination module for directing a nonzero-order Gaussian illumination beam towards a plurality of locations on a sample and a collection module for detecting light scattered from the sample in response to the nonzero-order Gaussian illumination beams and generating a plurality of output images or signals for each location on the sample. The system further comprises a processor system for detecting defects by (i) processing the output images or signals so as to retain filtered image or signal portions that substantially match a point spread function of the one or more nonzero-order Gaussian illumination beams, and (ii) analyzing the filtered image or signal portions to detect defects on the sample.
Abstract:
A semiconductor-inspection tool scans a semiconductor die using a plurality of optical modes. A plurality of defects on the semiconductor die are identified based on results of the scanning. Respective defects of the plurality of defects correspond to respective pixel sets of the semiconductor-inspection tool. The scanning fails to resolve the respective defects. The results include multi-dimensional data based on pixel intensity for the respective pixel sets, wherein each dimension of the multi-dimensional data corresponds to a distinct mode of the plurality of optical modes. A discriminant function is applied to the results to transform the multi-dimensional data for the respective pixel sets into respective scores. Based at least in part on the respective scores, the respective defects are divided into distinct classes.
Abstract:
Methods and systems for detecting defects on a wafer are provided. One system includes an illumination subsystem configured to direct light to at least one spot on a wafer. The system also includes at least one element configured to block first portion(s) of light scattered from the at least one spot from reaching a detector while allowing second portion(s) of the light scattered from the at least one spot to be detected by the detector. The first portion(s) of the light are scattered from one or more patterned features in a logic region on the wafer. The second portion(s) of the light are not scattered from the one or more patterned features. The detector is not an imaging detector. The system further includes a computer subsystem configured to detect defects on the wafer based on output of the detector.
Abstract:
A semiconductor-inspection tool scans a semiconductor die using a plurality of optical modes. A plurality of defects on the semiconductor die are identified based on results of the scanning. Respective defects of the plurality of defects correspond to respective pixel sets of the semiconductor-inspection tool. The scanning fails to resolve the respective defects. The results include multi-dimensional data based on pixel intensity for the respective pixel sets, wherein each dimension of the multi-dimensional data corresponds to a distinct mode of the plurality of optical modes. A discriminant function is applied to the results to transform the multi-dimensional data for the respective pixel sets into respective scores. Based at least in part on the respective scores, the respective defects are divided into distinct classes.
Abstract:
Disclosed are apparatus and methods for detecting defects on a semiconductor sample. The system includes an illumination module for directing a nonzero-order Gaussian illumination beam towards a plurality of locations on a sample and a collection module for detecting light scattered from the sample in response to the nonzero-order Gaussian illumination beams and generating a plurality of output images or signals for each location on the sample. The system further comprises a processor system for detecting defects by (i) processing the output images or signals so as to retain filtered image or signal portions that substantially match a point spread function of the one or more nonzero-order Gaussian illumination beams, and (ii) analyzing the filtered image or signal portions to detect defects on the sample.
Abstract:
Methods and systems for detecting defects on a wafer are provided. One system includes an illumination subsystem configured to direct light to at least one spot on a wafer. The system also includes at least one element configured to block first portion(s) of light scattered from the at least one spot from reaching a detector while allowing second portion(s) of the light scattered from the at least one spot to be detected by the detector. The first portion(s) of the light are scattered from one or more patterned features in a logic region on the wafer. The second portion(s) of the light are not scattered from the one or more patterned features. The detector is not an imaging detector. The system further includes a computer subsystem configured to detect defects on the wafer based on output of the detector.