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公开(公告)号：US20190206041A1
公开(公告)日：2019-07-04
申请号：US16201788
申请日：2018-11-27
Applicant: KLA-Tencor Corporation
Inventor： Hawren Fang , Abdurrahman Sezginer , Rui-fang Shi
IPC: G06T7/00
CPC classification number: G06T7/001 , G06T2207/20081 , G06T2207/20084
Abstract: Disclosed are methods and apparatus for inspecting a photolithographic reticle. A near field reticle image is generated via a deep learning process based on a reticle database image produced from a design database, and a far field reticle image is simulated at an image plane of an inspection system via a physics-based process based on the near field reticle image. The deep learning process includes training a deep learning model based on minimizing differences between the far field reticle images and a plurality of corresponding training reticle images acquired by imaging a training reticle fabricated from the design database, and such training reticle images are selected for pattern variety and are defect-free. A test area of a test reticle, which is fabricated from the design database, is inspected for defects via a die-to-database process that includes comparing a plurality of references images from a reference far field reticle image to a plurality of test images acquired by the inspection system from the test reticle. The reference far field reticle image is simulated based on a reference near field reticle image that is generated by the trained deep learning model.
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公开(公告)号：US10304180B2
公开(公告)日：2019-05-28
申请号：US15641150
申请日：2017-07-03
Applicant: KLA-Tencor Corporation
Inventor： Rui-fang Shi , Abdurrahman Sezginer
IPC: G06T7/00 , G01N21/956 , G03F1/84 , G03F7/20
Abstract: Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire images at different imaging configurations from each of a plurality of pattern areas of a test reticle. A reticle near field for each of the pattern areas of the test reticle is recovered based on the acquired images from each pattern area of the test reticle. A lithography model is applied to the reticle near field for the test reticle to simulate a plurality of test wafer images, and the simulated test wafer images are analyzed to determine whether the test reticle will likely result in an unstable or defective wafer.
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公开(公告)号：US20160335753A1
公开(公告)日：2016-11-17
申请号：US15221304
申请日：2016-07-27
Applicant: KLA-Tencor Corporation
Inventor： Abdurrahman Sezginer , Gang Pan , Bing Li
CPC classification number: G06T7/001 , G01N21/9501 , G01N21/95607 , G01N2021/95676 , G01N2201/12 , G03F1/84 , G03F7/7065 , G06K9/6232 , G06K9/6252 , G06K9/6282 , G06N99/005 , G06T7/0008 , G06T2207/20081 , G06T2207/30148
Abstract: Apparatus and methods for inspecting a specimen are disclosed. An inspection tool is used at one or more operating modes to obtain images of a plurality of training regions of a specimen, and the training regions are identified as defect-free. Three or more basis training images are derived from the images of the training regions. A classifier is formed based on the three or more basis training images. The inspection system is used at the one or more operating modes to obtain images of a plurality of test regions of a specimen. Three or more basis test images are derived from to the test regions. The classifier is applied to the three or more basis test images to find defects in the test regions.
Abstract translation: 公开了用于检查试样的装置和方法。 以一种或多种操作模式使用检查工具来获得样本的多个训练区域的图像，并且训练区域被识别为无缺陷的。 从训练区域的图像导出三个或更多个基础训练图像。 基于三个或更多个基础训练图像形成分类器。 在一个或多个操作模式下使用检查系统以获得样本的多个测试区域的图像。 三个或更多个基础测试图像来自测试区域。 分类器应用于三个或更多个基础测试图像，以在测试区域中发现缺陷。
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公开(公告)号：US09430824B2
公开(公告)日：2016-08-30
申请号：US14274972
申请日：2014-05-12
Applicant: KLA-Tencor Corporation
Inventor： Abdurrahman Sezginer , Gang Pan , Bing Li
IPC: G06T7/00 , G01N21/956 , G06K9/62 , G03F7/20 , G03F1/84
CPC classification number: G06T7/001 , G01N21/9501 , G01N21/95607 , G01N2021/95676 , G01N2201/12 , G03F1/84 , G03F7/7065 , G06K9/6232 , G06K9/6252 , G06K9/6282 , G06N99/005 , G06T7/0008 , G06T2207/20081 , G06T2207/30148
Abstract: Apparatus and methods for inspecting a photolithographic reticle are disclosed. A reticle inspection tool is used at one or more operating modes to obtain images of a plurality of training regions of a reticle, and the training regions are identified as defect-free. Three or more basis training images are derived from the images of the training regions. A classifier is formed based on the three or more basis training images. The inspection system is used at the one or more operating modes to obtain images of a plurality of test regions of a reticle. Three or more basis test images are derived from to the test regions. The classifier is applied to the three or more basis test images to find defects in the test regions.
Abstract translation: 公开了用于检查光刻掩模版的装置和方法。 在一种或多种操作模式下使用掩模版检查工具来获得掩模版的多个训练区域的图像，并且将训练区域识别为无缺陷。 从训练区域的图像导出三个或更多个基础训练图像。 基于三个或更多个基础训练图像形成分类器。 在一个或多个操作模式下使用检查系统以获得掩模版的多个测试区域的图像。 三个或更多个基础测试图像来自测试区域。 分类器应用于三个或更多个基础测试图像，以在测试区域中发现缺陷。
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5.发明授权公开(公告)号：US09335206B2
公开(公告)日：2016-05-10
申请号：US14010484
申请日：2013-08-26
Applicant: KLA-Tencor Corporation
Inventor： Qiang Zhang , Yanwei Liu , Abdurrahman Sezginer
CPC classification number: G01J1/00 , G01J1/4257 , G02B5/0833 , G02B5/0891 , G03F1/24 , G03F1/50 , G03F1/52 , G03F1/84 , G21K7/00
Abstract: Disclosed is test structure for measuring wave-front aberration of an extreme ultraviolet (EUV) inspection system. The test structure includes a substrate formed from a material having substantially no reflectivity for EUV light and a multilayer (ML) stack portion, such as a pillar, formed on the substrate and comprising a plurality of alternating pairs of layers having different refractive indexes so as to reflect EUV light. The pairs have a count equal to or less than 15.
Abstract translation: 公开了用于测量极紫外（EUV）检测系统的波前像差的测试结构。 测试结构包括由基本上不对EUV光反射的材料形成的基板和形成在基板上的多层（ML）堆叠部分，例如柱状物，并且包括具有不同折射率的多个交替对的层， 反映EUV光。 这些对具有等于或小于15的计数。
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Patent Agency Ranking
公开(公告)号：US20150300965A1
公开(公告)日：2015-10-22
申请号：US14690442
申请日：2015-04-19
Applicant: KLA-Tencor Corporation
Inventor： Abdurrahman Sezginer , John Hench , Michael S. Bakeman
IPC: G01N23/201
CPC classification number: G01N23/201 , G01N2223/611 , G01N2223/645 , H01L22/12
Abstract: Methods and systems for performing measurements of semiconductor structures and materials based on scatterometry measurement data are presented. Scatterometry measurement data is used to generate an image of a material property of a measured structure based on the measured intensities of the detected diffraction orders. In some examples, a value of a parameter of interest is determined directly from the map of the material property of the measurement target. In some other examples, the image is compared to structural characteristics estimated by a geometric, model-based parametric inversion of the same measurement data. Discrepancies are used to update the geometric model of the measured structure and improve measurement performance. This enables a metrology system to converge on an accurate parametric measurement model when there are significant deviations between the actual shape of a manufactured structure subject to model-based measurement and the modeled shape of the structure.
Abstract translation: 介绍了基于散射测量数据进行半导体结构和材料测量的方法和系统。 散射测量测量数据用于基于检测到的衍射级的测量强度来生成测量结构的材料特性的图像。 在一些示例中，直接从测量对象的材料属性的映射确定感兴趣的参数的值。 在一些其他示例中，将图像与通过相同测量数据的几何，基于模型的参数反演估计的结构特征进行比较。 差异用于更新测量结构的几何模型，并提高测量性能。 当使基于模型的测量的制造结构的实际形状与结构的建模形状之间存在显着的偏差时，这使测量系统能够收敛于精确的参数测量模型。
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公开(公告)号：US20140063490A1
公开(公告)日：2014-03-06
申请号：US14010484
申请日：2013-08-26
Applicant: KLA-Tencor Corporation
Inventor： Qiang Zhang , Yanwei Liu , Abdurrahman Sezginer
IPC: G01J1/42
CPC classification number: G01J1/00 , G01J1/4257 , G02B5/0833 , G02B5/0891 , G03F1/24 , G03F1/50 , G03F1/52 , G03F1/84 , G21K7/00
Abstract: Disclosed is test structure for measuring wave-front aberration of an extreme ultraviolet (EUV) inspection system. The test structure includes a substrate formed from a material having substantially no reflectivity for EUV light and a multilayer (ML) stack portion, such as a pillar, formed on the substrate and comprising a plurality of alternating pairs of layers having different refractive indexes so as to reflect EUV light. The pairs have a count equal to or less than 15.
Abstract translation: 公开了用于测量极紫外（EUV）检测系统的波前像差的测试结构。 测试结构包括由基本上不对EUV光反射的材料形成的基板和形成在基板上的多层（ML）堆叠部分，例如柱状物，并且包括具有不同折射率的多个交替对的层， 反映EUV光。 这些对具有等于或小于15的计数。
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公开(公告)号：US20130088245A1
公开(公告)日：2013-04-11
申请号：US13647037
申请日：2012-10-08
Applicant: KLA-Tencor Corporation
Inventor： Abdurrahman Sezginer
IPC: G01R27/26
Abstract: Methods and systems for generating an indication of a changing electrostatic field between a sense electrode of a capacitance sensing integrated circuit and a specimen under inspection are presented. The capacitance sensing integrated circuit is an integrated circuit that includes a number of sense electrodes and sense electronics. By fabricating the elements of the capacitance sensing integrated circuit as a single microelectronic chip, the sense electrodes can be miniaturized to sizes that enable inspection of fine line patterns common in modern semiconductor manufacturing. In one embodiment, the sense electrodes are metallic contacts. In another embodiment the sense electrodes are field effect transistors (FETs) with a floating gate. The sense electronics generate an indication of the changing electrostatic field between each sense electrode and a specimen under inspection as the specimen is scanned relative to the capacitance sensing integrated circuit.
Abstract translation: 提出了用于产生电容感测集成电路的检测电极和检查样本之间的变化的静电场的指示的方法和系统。 电容感测集成电路是包括多个感测电极和感测电子器件的集成电路。 通过将电容感测集成电路的元件制造为单个微电子芯片，感测电极可以小型化以使得能够检查现代半导体制造中常见的细线图案。 在一个实施例中，感测电极是金属触点。 在另一个实施例中，感测电极是具有浮动栅极的场效应晶体管（FET）。 当样本相对于电容感测集成电路被扫描时，感测电子器件产生每个感测电极与被检查样本之间的变化的静电场的指示。
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公开(公告)号：US11131629B2
公开(公告)日：2021-09-28
申请号：US15882951
申请日：2018-01-29
Applicant: KLA-Tencor Corporation
Inventor： Abdurrahman Sezginer , Kuljit Virk , Eric Vella
Abstract: In one embodiment, disclosed are apparatus, methods, and targets for determining a phase shift of a photomask having a phase-shift target. An inspection or metrology system is used to direct an incident beam towards the target and then detect a plurality of intensity measurements that are transmitted through the target in response to the incident beam. A phase shift value for the target may then be determined based on the intensity measurements.
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公开(公告)号：US10761031B1
公开(公告)日：2020-09-01
申请号：US16119970
申请日：2018-08-31
Applicant: KLA Tencor Corporation
Inventor： Qiang Zhang , Abdurrahman Sezginer
Abstract: Disclosed is a system that includes a light source for generating an illumination beam and an illumination lens system for directing the illumination beam towards a sample. The system further includes a collection lens system for directing towards a detector output light from the sample in response to the illumination beam and a detector for receiving the output light from the sample. The collection lens system includes a fixed-design compensator plate having individually selectable filters with different configurations for correcting system aberration of the system under different operating conditions. The system also includes a controller operable for: (i) generating and directing the illumination beam towards the sample, (ii) selecting operating conditions and a filter for correcting the system aberration under such selected operating conditions, (iii) generating an image based on the output light, and (iv) determining whether the sample passes inspection or characterizing such sample based on the image.
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