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公开(公告)号：US20160109375A1
公开(公告)日：2016-04-21
申请号：US14882370
申请日：2015-10-13
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Wei Lu , Andrei V. Shchegrov , Pablo Rovira , Jonathan M. Madsen
IPC: G01N21/88
CPC classification number: G01N21/956 , G01N21/93
Abstract: Methods and systems for measuring metrology targets smaller than the illumination spot size employed to perform the measurement are described herein. Collected measurement signals contaminated with information from structures surrounding the target area are reconstructed to eliminate the contamination. In some examples, measurement signals associated one or more small targets and one or more large targets located in close proximity to one another are used to train a signal reconstruction model. The model is subsequently used to reconstruct measurement signals from other small targets. In some other examples, multiple measurements of a small target at different locations within the target are de-convolved to estimate target area intensity. Reconstructed measurement signals are determined by a convolution of the illumination spot profile and the target area intensity. In a further aspect, the reconstructed signals are used to estimate values of parameters of interest associated with the measured structures.
Abstract translation: 本文描述了用于测量小于用于执行测量的照明点尺寸的度量目标的方法和系统。 重建被污染源自目标区域周围结构信息的收集的测量信号，以消除污染。 在一些示例中，使用与一个或多个小目标相关联的测量信号和彼此靠近彼此靠近的一个或多个大目标来训练信号重建模型。 该模型随后用于重建来自其他小目标的测量信号。 在一些其他示例中，目标内不同位置处的小目标的多次测量被去卷积以估计目标区域强度。 重建的测量信号由照明光斑轮廓和目标区域强度的卷积确定。 在另一方面，重建的信号用于估计与测量结构相关联的感兴趣参数的值。
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公开(公告)号：US20200243400A1
公开(公告)日：2020-07-30
申请号：US16257066
申请日：2019-01-24
Applicant: KLA-Tencor Corporation
Inventor： David Y. Wang , Esen Salcin , Michael Friedmann , Derrick Shaughnessy , Andrei V. Shchegrov , Jonathan M. Madsen , Alexander Kuznetsov
Abstract: Methods and systems for performing co-located measurements of semiconductor structures with two or more measurement subsystems are presented herein. To achieve a sufficiently small measurement box size, the metrology system monitors and corrects the alignment of the measurement spot of each metrology subsystem with a metrology target to achieve maximum co-location of the measurement spots of each metrology subsystem with the metrology target. In another aspect, measurements are performed simultaneously by two or more metrology subsystems at high throughput at the same wafer location. Furthermore, the metrology system effectively decouples simultaneously acquired measurement signals associated with each measurement subsystem. This maximizes signal information associated with simultaneous measurements of the same metrology by two or more metrology subsystems.
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公开(公告)号：US09875946B2
公开(公告)日：2018-01-23
申请号：US14252323
申请日：2014-04-14
Applicant: KLA-Tencor Corporation
Inventor： Andrei V. Shchegrov , Jonathan M. Madsen , Stilian Ivanov Pandev , Ady Levy , Daniel Kandel , Michael E. Adel , Ori Tadmor
IPC: H01L21/66
CPC classification number: H01L22/12 , H01L22/20 , H01L22/30 , H01L2924/0002 , H01L2924/00
Abstract: Methods and systems for performing semiconductor metrology directly on device structures are presented. A measurement model is created based on measured training data collected from at least one device structure. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measurement data collected from device structures of other wafers. In some examples, measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement may be derived from measurements performed by a combination of multiple, different measurement techniques.
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公开(公告)号：US10352876B2
公开(公告)日：2019-07-16
申请号：US14704840
申请日：2015-05-05
Applicant: KLA—Tencor Corporation
Inventor： Andrei V. Shchegrov , Stilian Ivanov Pandev , Jonathan M. Madsen , Alexander Kuznetsov , Walter Dean Mieher
Abstract: Methods and systems for creating a measurement model based only on measured training data are presented. The trained measurement model is then used to calculate overlay values directly from measured scatterometry data. The measurement models receive scatterometry signals directly as input and provide overlay values as output. In some embodiments, overlay error is determined from measurements of design rule structures. In some other embodiments, overlay error is determined from measurements of specialized target structures. In a further aspect, the measurement model is trained and employed to measure additional parameters of interest, in addition to overlay, based on the same or different metrology targets. In some embodiments, measurement data from multiple targets, measurement data collected by multiple metrologies, or both, is used for model building, training, and measurement. In some embodiments, an optimization algorithm automates the measurement model building and training process.
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5.发明申请公开(公告)号：US20150323316A1
公开(公告)日：2015-11-12
申请号：US14704840
申请日：2015-05-05
Applicant: KLA-Tencor Corporation
Inventor： Andrei V. Shchegrov , Stilian Ivanov Pandev , Jonathan M. Madsen , Alexander Kuznetsov , Walter Dean Mieher
CPC classification number: G01N21/9501 , G01B11/27 , G06N20/00
Abstract: Methods and systems for creating a measurement model based only on measured training data are presented. The trained measurement model is then used to calculate overlay values directly from measured scatterometry data. The measurement models receive scatterometry signals directly as input and provide overlay values as output. In some embodiments, overlay error is determined from measurements of design rule structures. In some other embodiments, overlay error is determined from measurements of specialized target structures. In a further aspect, the measurement model is trained and employed to measure additional parameters of interest, in addition to overlay, based on the same or different metrology targets. In some embodiments, measurement data from multiple targets, measurement data collected by multiple metrologies, or both, is used for model building, training, and measurement. In some embodiments, an optimization algorithm automates the measurement model building and training process.
Abstract translation: 提出了仅基于测量训练数据创建测量模型的方法和系统。 然后使用经过训练的测量模型直接从测量的散射测量数据计算覆盖值。 测量模型直接接收散射信号作为输入，并提供重叠值作为输出。 在一些实施例中，根据设计规则结构的测量确定覆盖误差。 在一些其它实施例中，通过专门的目标结构的测量来确定覆盖误差。 在另一方面，测量模型被训练并用于基于相同或不同的度量目标来测量除叠加之外的附加参数。 在一些实施例中，来自多个目标的测量数据，由多个计量学收集的测量数据或两者都用于建模，训练和测量。 在一些实施例中，优化算法使测量模型构建和训练过程自动化。
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Patent Agency Ranking
公开(公告)号：US20140297211A1
公开(公告)日：2014-10-02
申请号：US14223045
申请日：2014-03-24
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Jonathan M. Madsen
IPC: H01L21/66
CPC classification number: G03F7/70558 , G03F7/70641 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
Abstract: Methods and systems for creating a measurement model based on measured training data are presented. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measured data collected from other wafers. The measurement models receive measurement data directly as input and provide process parameter values, structure parameter values, or both, as output. The measurement model enables the direct measurement of process parameters. Measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement, may be derived from measurements performed by a combination of multiple, different measurement techniques.
Abstract translation: 介绍了基于测量训练数据创建测量模型的方法和系统。 训练有素的测量模型用于直接从其他晶圆收集的测量数据中计算过程参数值，结构参数值或两者。 测量模型直接作为输入接收测量数据，并提供过程参数值，结构参数值或两者作为输出。 测量模型可以直接测量工艺参数。 收集来自多个目标的测量数据，用于建模，训练和测量。 在一些示例中，使用与多个目标相关联的测量数据消除或显着降低测量结果中下层的影响，并且能够进行更精确的测量。 用于模型建立，训练和测量收集的测量数据可以通过多种不同测量技术的组合进行的测量得出。
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公开(公告)号：US10101670B2
公开(公告)日：2018-10-16
申请号：US14223045
申请日：2014-03-24
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Jonathan M. Madsen
Abstract: Methods and systems for creating a measurement model based on measured training data are presented. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measured data collected from other wafers. The measurement models receive measurement data directly as input and provide process parameter values, structure parameter values, or both, as output. The measurement model enables the direct measurement of process parameters. Measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement, may be derived from measurements performed by a combination of multiple, different measurement techniques.
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公开(公告)号：US09693439B1
公开(公告)日：2017-06-27
申请号：US14304329
申请日：2014-06-13
Applicant: KLA-Tencor Corporation
Inventor： Guorong V. Zhuang , Michael S. Bakeman , Andrei V. Shchegrov , Jonathan M. Madsen
IPC: H05G2/00 , G01N23/201
CPC classification number: H05G2/005 , G01N23/201 , G21K1/06 , H01J35/08 , H01J35/14 , H01J2235/082 , H05G2/008
Abstract: Methods and systems for realizing a high brightness liquid metal droplet based x-ray source suitable for high throughput x-ray metrology are presented herein. A high power laser bombards a solid target material to generate liquid metal droplets. The laser generated liquid metal droplets are excited with a focused, high power excitation beam such as an electron or laser beam. The excitation beam is synchronized with the stream of liquid metal droplets stimulated by the high power laser to achieve a stable x-ray emission generated by the excited liquid metal droplets. In some embodiments, x-ray optics are designed to efficiently collect and focus radiation within a desired emission band onto a measurement target. Reliability is improved by shielding the excitation source and the x-ray optics from the region of interaction between the excitation beam and the liquid metal droplet anode by a localized curtain of shielding gas.
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公开(公告)号：US20130222795A1
公开(公告)日：2013-08-29
申请号：US13770202
申请日：2013-02-19
Applicant: KLA-Tencor Corporation
Inventor： Jonathan M. Madsen , Andrei V. Shchegrov , Michael Bakeman , Thaddeus Gerard Dziura , Alexander Kuznetsov , Bin-Ming (Benjamin) Tsai
IPC: G01N21/956
CPC classification number: G01N21/956 , G01B11/0625 , G01B11/0641 , G01B2210/56 , G03F7/70683 , H01L22/30
Abstract: Methods and systems for enhancing metrology sensitivity to particular parameters of interest are presented. Field enhancement elements (FEEs) are constructed as part of a specimen to enhance the measurement sensitivity of structures of interest present on the specimen. The design of the FEEs takes into account measurement goals and manufacturing design rules to make target fabrication compatible with the overall device fabrication process. Measurement of opaque materials, high-aspect ratio structures, structures with low-sensitivity, or mutually correlated parameters is enhanced by the addition of FEEs. Exemplary measurements include critical dimension, film thickness, film composition, and optical scatterometry overlay. In some examples, a target element includes different FEEs to improve the measurement of different structures of interest. In other examples, different target elements include different FEEs. In some other examples, field enhancement elements are shaped to concentrate an electric field in a thin film deposited over the FEE.
Abstract translation: 提出了用于增强对感兴趣的特定参数的度量敏感性的方法和系统。 场增强元件（FEE）被构造为样本的一部分，以增强样品上存在的感兴趣结构的测量灵敏度。 FEE的设计考虑了测量目标和制造设计规则，使目标制造与整个设备制造过程相兼容。 通过添加FEE，增强不透明材料，高纵横比结构，低灵敏度结构或相互关联的参数的测量。 示例性测量包括临界尺寸，膜厚度，膜组成和光学散射测量覆盖。 在一些示例中，目标元素包括不同的FEE以改善感兴趣的不同结构的测量。 在其他示例中，不同的目标元素包括不同的FEE。 在一些其他示例中，场增强元件被成形为将电场集中在沉积在FEE上的薄膜中。
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公开(公告)号：US10804167B2
公开(公告)日：2020-10-13
申请号：US16257066
申请日：2019-01-24
Applicant: KLA-Tencor Corporation
Inventor： David Y. Wang , Esen Salcin , Michael Friedmann , Derrick Shaughnessy , Andrei V. Shchegrov , Jonathan M. Madsen , Alexander Kuznetsov
Abstract: Methods and systems for performing co-located measurements of semiconductor structures with two or more measurement subsystems are presented herein. To achieve a sufficiently small measurement box size, the metrology system monitors and corrects the alignment of the measurement spot of each metrology subsystem with a metrology target to achieve maximum co-location of the measurement spots of each metrology subsystem with the metrology target. In another aspect, measurements are performed simultaneously by two or more metrology subsystems at high throughput at the same wafer location. Furthermore, the metrology system effectively decouples simultaneously acquired measurement signals associated with each measurement subsystem. This maximizes signal information associated with simultaneous measurements of the same metrology by two or more metrology subsystems.
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