公开(公告)号：US11200658B2

公开(公告)日：2021-12-14

申请号：US16454531

申请日：2019-06-27

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev

IPC: G06T7/00 ,  G03F7/20 ,  H04N5/225 ,  H04N17/00 ,  G06K9/52 ,  G06K9/62

Abstract: Methods and systems for combining information present in measured images of semiconductor wafers with additional measurements of particular structures within the measured images are presented herein. In one aspect, an image-based signal response metrology (SRM) model is trained based on measured images and corresponding reference measurements of particular structures within each image. The trained, image-based SRM model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. In another aspect, a measurement signal synthesis model is trained based on measured images and corresponding measurement signals generated by measurements of particular structures within each image by a non-imaging measurement technique. Images collected from other wafers are transformed into synthetic measurement signals associated with the non-imaging measurement technique and a model-based measurement is employed to estimate values of parameters of interest based on the synthetic signals.

公开(公告)号：US10769320B2

公开(公告)日：2020-09-08

申请号：US14107850

申请日：2013-12-16

Applicant: KLA-Tencor Corporation

Inventor： Alexander Kuznetsov ,  Andrei V. Shchegrov ,  Stilian Ivanov Pandev

IPC: G06F30/20 ,  G03F7/20 ,  G06F30/398

Abstract: Methods and systems for performing measurements based on a measurement model integrating a metrology-based target model with a process-based target model. Systems employing integrated measurement models may be used to measure structural and material characteristics of one or more targets and may also be used to measure process parameter values. A process-based target model may be integrated with a metrology-based target model in a number of different ways. In some examples, constraints on ranges of values of metrology model parameters are determined based on the process-based target model. In some other examples, the integrated measurement model includes the metrology-based target model constrained by the process-based target model. In some other examples, one or more metrology model parameters are expressed in terms of other metrology model parameters based on the process model. In some other examples, process parameters are substituted into the metrology model.

公开(公告)号：US10365225B1

公开(公告)日：2019-07-30

申请号：US15061787

申请日：2016-03-04

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Wei Lu

IPC: G01B11/00 ,  G01N21/84 ,  H01L21/67

Abstract: Methods and systems for estimating values of parameters of interest of structures fabricated on a wafer with a signal response metrology (SRM) model trained based on reference measurement data collected from the same wafer are presented herein. In one aspect, the SRM model is an input-output model trained to establish a functional relationship between reference measurements of structures fabricated on the wafer to raw measurement data collected from the same wafer. The raw measurement data collected from the wafer is employed for training the SRM model and for performing measurements using the trained SRM model. In another aspect, the SRM model uses the entire set of raw measurement data collected from a number of measurement sites across the wafer for both training and subsequent measurement at each individual site. In a further aspect, the SRM model is trained and utilized to measure each parameter of interest individually.

公开(公告)号：US10215559B2

公开(公告)日：2019-02-26

申请号：US14879534

申请日：2015-10-09

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Dzmitry Sanko ,  Alexander Kuznetsov

IPC: G01B11/00 ,  G01B11/27 ,  G01B11/14 ,  G01B11/24

Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a primary, multiple patterned target is measured and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model. In some other examples, a primary, multiple patterned target and an assist target are measured and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model. In some other examples, a primary, multiple patterned target is measured at different process steps and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model.

公开(公告)号：US10210606B2

公开(公告)日：2019-02-19

申请号：US14880077

申请日：2015-10-09

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Dzmitry Sanko ,  Wei Lu ,  Siddharth Srivastava

IPC: G06T7/00 ,  G01N21/956 ,  G03F7/20 ,  G06T7/33 ,  H04N5/225

Abstract: Methods and systems for measuring overlay error between structures formed on a substrate by successive lithographic processes are presented herein. Two overlay targets, each having programmed offsets in opposite directions are employed to perform an overlay measurement. Overlay error is measured based on zero order scatterometry signals and scatterometry data is collected from each target at two different azimuth angles. In addition, methods and systems for creating an image-based measurement model based on measured, image-based training data are presented. The trained, image-based measurement model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. The methods and systems for image based measurement described herein are applicable to both metrology and inspection applications.

公开(公告)号：US10152678B2

公开(公告)日：2018-12-11

申请号：US14942738

申请日：2015-11-16

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Thaddeus Gerard Dziura ,  Andrei V. Shchegrov

IPC: G06N99/00

Abstract: A system, method and computer program product are provided for combining raw data from multiple metrology tools. Reference values are obtained for at least one parameter of a training component. Signals are collected for the at least one parameter of the training component, utilizing a first metrology tool and a different second metrology tool. Further, at least a portion the signals are transformed into a set of signals, and for each of the at least one parameter of the training component, a corresponding relationship between the set of signals and the reference values is determined and a corresponding training model is created therefrom. Signals from a target component are collected utilizing at least the first metrology tool and the second metrology tool, and each created training model is applied to the signals collected from the target component to measure parametric values for the target component.

公开(公告)号：US10072921B2

公开(公告)日：2018-09-11

申请号：US14960121

申请日：2015-12-04

Applicant: KLA-Tencor Corporation

Inventor： Jiyou Fu ,  Noam Sapiens ,  Kevin A. Peterlinz ,  Stilian Ivanov Pandev

IPC: G01B11/24 ,  G01B11/00 ,  G03F7/00 ,  G01N21/956 ,  G01N21/21

CPC classification number: G01B11/002 ,  G01B11/24 ,  G01B2210/56 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/00

Abstract: A spectroscopic beam profile metrology system simultaneously detects measurement signals over a large wavelength range and a large range of angles of incidence (AOI). In one aspect, a multiple wavelength illumination beam is reshaped to a narrow line shaped beam of light before projection onto a specimen by a high numerical aperture objective. After interaction with the specimen, the collected light is passes through a wavelength dispersive element that projects the range of AOIs along one direction and wavelength components along another direction of a two-dimensional detector. Thus, the measurement signals detected at each pixel of the detector each represent a scatterometry signal for a particular AOI and a particular wavelength. In another aspect, a hyperspectral detector is employed to simultaneously detect measurement signals over a large wavelength range, range of AOIs, and range of azimuth angles.

公开(公告)号：US10062157B2

公开(公告)日：2018-08-28

申请号：US15342432

申请日：2016-11-03

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Alexander Kuznetsov ,  Gregory R. Brady ,  Andrei V. Shchegrov ,  Noam Sapiens ,  John J. Hench

IPC: G01N21/25 ,  G01N21/84 ,  G06T7/00 ,  G01N21/21 ,  G03F7/20 ,  G06T7/60

CPC classification number: G06T7/0004 ,  G01B2210/56 ,  G01N21/211 ,  G01N21/255 ,  G01N21/84 ,  G01N21/8422 ,  G01N2201/06113 ,  G03F7/70625 ,  G03F7/70633 ,  G06T7/60 ,  G06T2207/10004 ,  G06T2207/30148

Abstract: Disclosed are apparatus and methods for determining a structure or process parameter value of a target of interest on a semiconductor wafer. A plurality of collection patterns are defined for a spatial light beam controller positioned at a pupil image plane of a metrology tool. For each collection pattern, a signal is collected from a sensor of the metrology tool, and each collected signal represents a combination of a plurality of signals that the spatial light beam controller samples, using each collection pattern, from a pupil image of the target of interest. The collection patterns are selected so that the pupil image is reconstructable based on the collection patterns and their corresponding collection signals. The collected signal for each of the collection patterns is analyzed to determine a structure or process parameter value for the target of interest.

公开(公告)号：US20170045356A1

公开(公告)日：2017-02-16

申请号：US15236334

申请日：2016-08-12

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Dzmitry Sanko

IPC: G01B21/00

CPC classification number: G01B21/042 ,  G01B2210/56

Abstract: A system, method and computer program product are provided for calibrating metrology tools. One or more design-of-experiments wafers is received for calibrating a metrology tool. A set of signals is collected by measuring the one or more wafers utilizing the metrology tool. A first transformation is determined to convert the set of signals to components, and a second transformation is determined to convert a set of reference signals to reference components. The set of reference signals is collected by measuring the one or more wafers utilizing a well-calibrated reference tool. A model is trained based on the reference components that maps the components to converted components, and the model, first transformation, and second transformation are stored in a memory associated with the metrology tool.

Abstract translation: 提供了一种用于校准计量工具的系统，方法和计算机程序产品。 接收一个或多个实验设计的晶片来校准测量工具。 通过使用计量工具测量一个或多个晶片来收集一组信号。 确定第一变换以将该组信号转换成分量，并且确定第二变换以将一组参考信号转换为参考分量。 通过使用精确校准的参考工具测量一个或多个晶片来收集参考信号组。 基于将组件映射到转换的组件的参考组件来训练模型，并且模型，第一变换和第二变换被存储在与计量工具相关联的存储器中。

公开(公告)号：US20160327605A1

公开(公告)日：2016-11-10

申请号：US15148116

申请日：2016-05-06

Applicant: KLA-Tencor Corporation

Inventor： Stilian Ivanov Pandev ,  Sanjay Kapasi ,  Mark D. Smith ,  Ady Levy

IPC: G01R31/26 ,  G01B11/00

CPC classification number: G01B11/00 ,  H01L22/12 ,  H01L22/20

Abstract: Methods and systems for monitoring parameters characterizing a set of hot spot structures fabricated at different locations on a semiconductor wafer are presented herein. The hot spot structures are device structures that exhibit sensitivity to process variations and give rise to limitations on permissible process variations that must be enforced to prevent device failures and low yield. A trained hot spot measurement model is employed to receive measurement data generated by one or more metrology systems at one or more metrology targets and directly determine values of one or more hot spot parameters. The hot spot measurement model is trained to establish a functional relationship between one or more characteristics of a hot spot structure under consideration and corresponding measurement data associated with measurements of at least one metrology target on the same wafer. A fabrication process parameter is adjusted based on the value of a measured hot spot parameter.

Abstract translation: 本文提供了用于监测表征在半导体晶片上的不同位置处制造的一组热点结构的参数的方法和系统。 热点结构是对工艺变化表现出敏感性并且对必须执行的允许的工艺变化产生限制以防止器件故障和低产量的器件结构。 采用经过训练的热点测量模型来接收由一个或多个测量系统在一个或多个测量目标产生的测量数据，并直接确定一个或多个热点参数的值。 对热点测量模型进行训练，以建立所考虑的热点结构的一个或多个特征与相同测量结果相关联的测量数据与相同晶片上的至少一个测量目标的测量数据之间的功能关系。 基于测量的热点参数的值来调整制造工艺参数。