公开(公告)号：US20170033212A1

公开(公告)日：2017-02-02

申请号：US15291168

申请日：2016-10-12

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Wolfgang Bergner ,  Romain Esteve ,  Dethard Peters

IPC: H01L29/78 ,  H01L29/04 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/16 ,  H01L29/10

CPC classification number: H01L29/7805 ,  H01L21/046 ,  H01L29/045 ,  H01L29/0688 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/66734 ,  H01L29/78 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/861

Abstract: A transistor cell includes a drift region, a source region, and a body region arranged between the source region and the drift region in a semiconductor body. A drain region is below the drift region. An insulated gate trench extends into the drift region. A diode region extends deeper into the drift region than the insulated gate trench and partly under the insulated gate trench so as to form a pn junction with the drift region below a bottom of the insulated gate trench. The body region adjoins a first sidewall of the insulated gate trench and the diode region adjoins a second sidewall of the insulated gate trench opposite the first sidewall so that the body region of the transistor cell and a channel region including a region of the body region extending along the first sidewall are separated from the diode region by the insulated gate trench.

Abstract translation: 晶体管单元包括漂移区域，源极区域和布置在半导体本体中的源区域和漂移区域之间的体区域。 漏极区域在漂移区域之下。 绝缘栅沟槽延伸到漂移区域中。 二极管区域比绝缘栅极沟槽更深地延伸到漂移区域中，并且部分地延伸在绝缘栅极沟槽下方，以便与绝缘栅极沟槽的底部下方的漂移区域形成pn结。 主体区域邻接绝缘栅极沟槽的第一侧壁，并且二极管区域与绝缘栅极沟槽的与第一侧壁相对的第二侧壁邻接，使得晶体管单元的主体区域和包括主体区域的区域的沟道区域延伸 沿着第一侧壁通过绝缘栅沟槽与二极管区分离。

公开(公告)号：US20160163852A1

公开(公告)日：2016-06-09

申请号：US14957116

申请日：2015-12-02

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Wolfgang Bergner ,  Romain Esteve ,  Dethard Peters

IPC: H01L29/78 ,  H01L29/04 ,  H01L29/10 ,  H01L29/06 ,  H01L29/872 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L21/324 ,  H01L29/739 ,  H01L29/16 ,  H01L29/08

CPC classification number: H01L29/7806 ,  H01L21/26586 ,  H01L21/31155 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/66143 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/872

Abstract: A semiconductor device includes a semiconductor body and a device cell in the semiconductor body. The device cell includes: drift, source, body and diode regions; a pn junction between the diode and drift regions; a trench with first and second opposing sidewalls and a bottom, the body region adjoining the first sidewall, the diode region adjoining the second sidewall, and the pn junction adjoining the trench bottom; a gate electrode in the trench and dielectrically insulated from the source, body, diode and drift regions by a gate dielectric; a further trench extending from a first surface of the semiconductor body into the semiconductor body; a source electrode arranged in the further trench adjoining the source and diode regions. The diode region includes a lower diode region arranged below the trench bottom. The lower diode region has a maximum of a doping concentration distant to the trench bottom.

Abstract translation: 半导体器件包括半导体本体和半导体本体中的器件单元。 器件单元包括：漂移，源极，体和二极管区域; 二极管和漂移区之间的pn结; 具有第一和第二相对侧壁和底部的沟槽，邻接第一侧壁的主体区域，与第二侧壁相邻的二极管区域和与沟槽底部相邻的pn结; 沟槽中的栅电极，并通过栅介质与源极，主体，二极管和漂移区介电绝缘; 从所述半导体主体的第一表面延伸到所述半导体本体中的另一个沟槽; 源电极布置在邻接源极和二极管区域的另一个沟槽中。 二极管区域包括布置在沟槽底部下方的下二极管区域。 下二极管区域具有远离沟槽底部的掺杂浓度的最大值。

公开(公告)号：US20150340487A1

公开(公告)日：2015-11-26

申请号：US14718443

申请日：2015-05-21

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Wolfgang Bergner ,  Romain Esteve ,  Dethard Peters

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/16

CPC classification number: H01L29/7805 ,  H01L21/046 ,  H01L29/045 ,  H01L29/0688 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/66734 ,  H01L29/78 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/861

Abstract: A semiconductor device includes a semiconductor body and at least one device cell integrated in the semiconductor body. Each device cell includes: a drift region, a source region, and a body region arranged between the source and drift regions; a diode region and a pn junction between the diode and drift regions; a trench having a first sidewall, a second sidewall opposite the first sidewall, and a bottom, the body region adjoining the first sidewall, the diode region adjoining the second sidewall, and the pn junction adjoining the bottom; a gate electrode in the trench and dielectrically insulated from the body, diode and drift regions by a gate dielectric. The diode region has a lower diode region arranged below the trench bottom, and the lower diode region has a maximum of a doping concentration distant to the trench bottom. A corresponding method of manufacturing the device also is provided.

Abstract translation: 半导体器件包括半导体本体和集成在半导体本体中的至少一个器件单元。 每个器件单元包括：漂移区，源区和布置在源极和漂移区之间的体区; 二极管区域和二极管与漂移区域之间的pn结; 具有第一侧壁，与第一侧壁相对的第二侧壁和底部，与第一侧壁邻接的主体区域，邻接第二侧壁的二极管区域和与底部相邻的pn结的沟槽; 沟槽中的栅极，并通过栅极电介质与体，二极管和漂移区介电绝缘。 二极管区域具有布置在沟槽底部下方的较低二极管区域，并且下二极管区域具有远离沟槽底部的掺杂浓度的最大值。 还提供了相应的制造装置的方法。

公开(公告)号：US11881512B2

公开(公告)日：2024-01-23

申请号：US17519161

申请日：2021-11-04

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Thomas Aichinger ,  Romain Esteve ,  Ravi Keshav Joshi ,  Shiqin Niu

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/1608 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66348 ,  H01L29/66666 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/7828

Abstract: A method includes providing a silicon carbide substrate, wherein a gate trench extends from a main surface of the silicon carbide substrate into the silicon carbide substrate and wherein a gate dielectric is formed on at least one sidewall of the gate trench, and forming a gate electrode in the gate trench, the gate electrode including a metal structure and a semiconductor layer between the metal structure and the gate dielectric.

公开(公告)号：US11195946B2

公开(公告)日：2021-12-07

申请号：US17172680

申请日：2021-02-10

Applicant: Infineon Technologies AG

Inventor： Andreas Peter Meiser ,  Romain Esteve ,  Roland Rupp

IPC: H01L21/04 ,  H01L29/78 ,  H01L29/10 ,  H01L29/08 ,  H01L29/739 ,  H01L29/66 ,  H01L29/06 ,  H01L29/16 ,  H01L29/423 ,  H01L29/417 ,  H01L29/04 ,  H01L29/872

Abstract: A method of manufacturing semiconductor devices includes: forming source regions of a first conductivity type in a SiC-based semiconductor substrate, wherein dopants are introduced selectively through first segments of first mask openings in a first dopant mask and wherein a longitudinal axis of the first mask opening extends into a first horizontal direction; forming pinning regions of a complementary second conductivity type, wherein dopants are selectively introduced through second segments of the first mask openings and wherein the first and second segments alternate along the first horizontal direction; and forming body regions of the second conductivity type, wherein dopants are selectively introduced through second mask openings in a second dopant mask, wherein a width of the second mask openings along a second horizontal direction orthogonal to the first horizontal direction is greater than a width of the first mask openings.

公开(公告)号：US10964808B2

公开(公告)日：2021-03-30

申请号：US16144880

申请日：2018-09-27

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Romain Esteve ,  Roland Rupp

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/08 ,  H01L29/739 ,  H01L29/66 ,  H01L29/06 ,  H01L29/16 ,  H01L29/423 ,  H01L29/417 ,  H01L29/04 ,  H01L29/872

Abstract: A semiconductor device includes trench gate structures that extend from a first surface into a semiconductor body of silicon carbide. The trench gate structures include a gate electrode and are spaced apart from one another along a first horizontal direction and extend into a body region with a longitudinal axis parallel to the first horizontal direction. First sections of first pn junctions between the body regions and a drift structure are tilted to the first surface and parallel to the first horizontal direction. Source regions form second pn junctions with the body regions. A gate length of the gate electrode along a second horizontal direction orthogonal to the first horizontal direction is greater than a channel length between the first sections of the first pn junctions and the second pn junctions.

公开(公告)号：US10896952B2

公开(公告)日：2021-01-19

申请号：US16797463

申请日：2020-02-21

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Wolfgang Bergner ,  Paul Ellinghaus ,  Rudolf Elpelt ,  Romain Esteve ,  Florian Grasse ,  Caspar Leendertz ,  Shiqin Niu ,  Dethard Peters ,  Ralf Siemieniec ,  Bernd Zippelius

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/265 ,  H01L29/423 ,  H01L29/66 ,  H01L27/088

Abstract: A semiconductor device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. A trench interval which defines a space between adjacent gate trenches extends in a second direction perpendicular to the first direction. Source regions of a first conductivity type formed in the SiC substrate occupy a first part of the space between adjacent gate trenches. Body regions of a second conductivity type opposite the first conductivity type formed in the SiC substrate and below the source regions occupy a second part of the space between adjacent gate trenches. Body contact regions of the second conductivity type formed in the SiC substrate occupy a third part of the space between adjacent gate trenches. Shielding regions of the second conductivity type formed deeper in the SiC substrate than the body regions adjoin a bottom of at least some of the gate trenches.

公开(公告)号：US10700182B2

公开(公告)日：2020-06-30

申请号：US15979050

申请日：2018-05-14

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Wolfgang Bergner ,  Romain Esteve ,  Daniel Kueck ,  Dethard Peters ,  Ralf Siemieniec ,  Bernd Zippelius

IPC: G06F30/398 ,  H01L29/66 ,  H01L29/739 ,  H01L27/02 ,  H01L29/16 ,  H01L29/78 ,  H01L29/861 ,  H01L21/66

Abstract: By using at least one of a processor device and model transistor cells, a set of design parameters for at least one of a transistor cell and a drift structure of a wide band-gap semiconductor device is determined, wherein an on state failure-in-time rate and an off state failure-in-time rate of a gate dielectric of the transistor cell are within a same order of magnitude for a predefined on-state gate-to-source voltage, a predefined off-state gate-to-source voltage, and a predefined off-state drain-to-source voltage.

公开(公告)号：US10586845B1

公开(公告)日：2020-03-10

申请号：US16193296

申请日：2018-11-16

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Wolfgang Bergner ,  Paul Ellinghaus ,  Rudolf Elpelt ,  Romain Esteve ,  Florian Grasse ,  Caspar Leendertz ,  Shiqin Niu ,  Dethard Peters ,  Ralf Siemieniec ,  Bernd Zippelius

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/265 ,  H01L29/423 ,  H01L29/66 ,  H01L27/088

Abstract: According to an embodiment of a semiconductor device, the device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. Rows of source regions of a first conductivity type are formed in the SiC substrate and extend lengthwise in parallel in a second direction which is transverse to the first direction. Rows of body regions of a second conductivity type opposite the first conductivity type are formed in the SiC substrate below the rows of source regions. Rows of body contact regions of the second conductivity type are formed in the SiC substrate. The rows of body contact regions extend lengthwise in parallel in the second direction. First shielding regions of the second conductivity type are formed deeper in the SiC substrate than the rows of body regions.

公开(公告)号：US20190157447A1

公开(公告)日：2019-05-23

申请号：US16256453

申请日：2019-01-24

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Wolfgang Bergner ,  Romain Esteve ,  Dethard Peters

IPC: H01L29/78 ,  H01L29/739 ,  H01L29/66 ,  H01L29/08 ,  H01L29/16 ,  H01L29/04 ,  H01L29/10 ,  H01L29/423 ,  H01L29/417

Abstract: A semiconductor device includes a semiconductor body and at least one device cell integrated in the semiconductor body. Each device cell includes a drift region, a source region, and a body region arranged between the source region and the drift region. A gate trench extends from a first surface of the semiconductor body, through the source and body regions and into the drift region. A diode region extends under the gate trench. A pn junction is formed between the diode and drift regions below the gate trench. A gate electrode arranged in the gate trench is dielectrically insulated from the source, body, diode and drift regions by a gate dielectric. A contact trench spaced apart from the gate trench extends from the first surface into the source region. A source electrode arranged in the contact trench adjoins the source region at a sidewall of the contact trench.