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    INTERFERENCE IN-SENSITIVE LITTROW SYSTEM FOR OPTICAL DEVICE STRUCTURE MEASUREMENT
    64.
    发明公开
    INTERFERENCE IN-SENSITIVE LITTROW SYSTEM FOR OPTICAL DEVICE STRUCTURE MEASUREMENT 审中-公开

    公开(公告)号：US20240142227A1

    公开(公告)日：2024-05-02

    申请号：US18408193

    申请日：2024-01-09

    Applicant: Applied Materials, Inc.

    Inventor： Yangyang SUN ,  Jinxin FU ,  Ludovic GODET

    IPC: G01B11/26

    CPC classification number: G01B11/26

    Abstract: Embodiments described herein provide for devices and methods of measuring a pitch P of optical device structures and an orientation angle ϕ of the optical device structures. One embodiment of the system includes an optical arm coupled to an arm actuator. The optical arm includes a light source. The light source emits a light path operable to be diffracted to the stage. The optical arm further includes a first beam splitter and a second beam splitter positioned in the light path. The first beam splitter directs the light path through a first lens and the second beam splitter directs the light path through a first dove prism and a second lens. The optical arm further includes a first detector operable to detect the light path from the first lens and second detector operable to detect the light path from the second lens.

    AUTOMATED METROLOGY METHOD FOR LARGE DEVICES
    67.
    发明公开
    AUTOMATED METROLOGY METHOD FOR LARGE DEVICES 审中-公开

    公开(公告)号：US20230408928A1

    公开(公告)日：2023-12-21

    申请号：US18332027

    申请日：2023-06-09

    Applicant: Applied Materials, Inc.

    Inventor： Yongan XU ,  Jin XU ,  Ludovic GODET

    IPC: G03F7/20 ,  G03F9/00

    CPC classification number: G03F7/70475 ,  G03F7/70633 ,  G03F9/7046 ,  G03F7/70683 ,  G03F9/7088

    Abstract: A system, software application, and method for optical device metrology of optical device patterns formed from lithography stitching are provided. In one example, the method includes creating a stitched design file comprising images of a plurality of masks; defining target coordinates for each of the plurality of masks in the stitched design file; defining an alignment mark for the stitched design file; capturing images of an optical device pattern at each of the target coordinates; comparing the captured images of the optical device pattern at each of the target coordinates to virtual images of the stitched design file at each of the target coordinates; and determining whether the optical device pattern at each of the target coordinates meets a threshold value.

    METHODS FOR PREPARING SMALL FEATURES ON A SUBSTRATE
    68.
    发明公开
    METHODS FOR PREPARING SMALL FEATURES ON A SUBSTRATE 审中-公开

    公开(公告)号：US20230253206A1

    公开(公告)日：2023-08-10

    申请号：US17989557

    申请日：2022-11-17

    Applicant: Applied Materials, Inc.

    Inventor： Yongan XU ,  Wei WU ,  Ludovic GODET

    IPC: H01L21/033

    CPC classification number: H01L21/0338 ,  H01L21/0335 ,  H01L21/0337

    Abstract: Embodiments of the present disclosure generally relate to methods for forming features having small and large line widths on the same substrate or device. In some embodiments, the methods described and discussed herein can be used to produce optical and photonic devices. These devices, including augmented reality (AR) devices and/or virtual reality (VR) devices, have desired pattern areas with different features and/or line widths to achieve the desired optical performance.

    COMPOSITE PVD TARGETS
    69.
    发明公开
    COMPOSITE PVD TARGETS 审中-公开

    公开(公告)号：US20230235447A1

    公开(公告)日：2023-07-27

    申请号：US18099277

    申请日：2023-01-20

    Applicant: Applied Materials, Inc.

    Inventor： Kenichi OHNO ,  Takashi KURATOMI ,  Ludovic GODET

    IPC: C23C14/34 ,  C23C14/50

    CPC classification number: C23C14/3414 ,  C23C14/50

    Abstract: Embodiments of the present disclosure generally relate to composite PVD target. The target has a diameter, a connection face, a substrate face opposite the connection face, a thickness between the connection face and the substrate face, and a material distribution. The material distribution includes a silicon containing material arranged in a pattern, and a titanium containing material arranged in the pattern. The material distribution is uniform at any point along the thickness.

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