公开(公告)号：US20200326621A1

公开(公告)日：2020-10-15

申请号：US16844636

申请日：2020-04-09

Applicant: Applied Materials, Inc.

Inventor： Ludovic GODET ,  Chien-An CHEN ,  Brian Alexander COHEN ,  Wayne MCMILLAN ,  Ian Matthew MCMACKIN

IPC: G03F7/00 ,  G02B6/34

Abstract: Methods for patterning of multi-depth layers for the fabrication of optical devices are provided. In one embodiment, a method is provided that includes disposing a resist layer over a device layer disposed over a top surface of a substrate, the device layer having a first portion and a second portion, patterning the resist layer to form a first resist layer pattern having a plurality of first openings and a second resist layer pattern having a plurality of second openings, and etching exposed portions of the device layer defined by the plurality of first openings and the plurality of second openings, wherein the plurality of first openings are configured to form at least a portion of a plurality of first structures within the optical device, and the plurality of second openings are configured to form at least a portion of a plurality of second structures within the optical device.

公开(公告)号：US20220100084A1

公开(公告)日：2022-03-31

申请号：US17545554

申请日：2021-12-08

Applicant: Applied Materials, Inc.

Inventor： Ludovic GODET ,  Chien-An CHEN ,  Brian Alexander COHEN ,  Wayne MCMILLAN ,  Ian Matthew MCMACKIN

IPC: G03F7/00 ,  G02B6/34

Abstract: Methods for patterning of multi-depth layers for the fabrication of optical devices are provided. In one embodiment, a method is provided that includes disposing a resist layer over a device layer disposed over a top surface of a substrate, the device layer having a first portion and a second portion, patterning the resist layer to form a first resist layer pattern having a plurality of first openings and a second resist layer pattern having a plurality of second openings, and etching exposed portions of the device layer defined by the plurality of first openings and the plurality of second openings, wherein the plurality of first openings are configured to form at least a portion of a plurality of first structures within the optical device, and the plurality of second openings are configured to form at least a portion of a plurality of second structures within the optical device.

公开(公告)号：US20220035245A1

公开(公告)日：2022-02-03

申请号：US17034004

申请日：2020-09-28

Applicant: Applied Materials, Inc.

Inventor： Ian Matthew MCMACKIN ,  Ludovic GODET

IPC: G03F7/00 ,  B29C33/42 ,  B29C43/02

Abstract: An apparatus for manufacturing a nano-imprint lithography stamp from a master template stamp, including a stamp chuck configured to selectively secure a stamp backing material thereto, a master chuck configured to support a master template stamp, the master template stamp including a master pattern thereon, the master chuck configured to support the master template stamp in facing relationship to the stamp backing material when selectively secured to the stamp chuck, wherein the master template stamp includes an electromagnetic energy curable material on and in the master pattern, and the stamp chuck is configured and arranged to position a portion of the backing material thereon spaced therefrom and in contact with the electromagnetic energy curable material, and the stamp chuck is further configured to position the portion of the backing material in contact with the energy curable material, after it is cured, in contact with the stamp chuck.

公开(公告)号：US20240319588A1

公开(公告)日：2024-09-26

申请号：US18678002

申请日：2024-05-30

Applicant: Applied Materials, Inc.

Inventor： Amita JOSHI ,  Ian Matthew MCMACKIN ,  Rami HOURANI ,  Yingdong LUO ,  Sivapackia GANAPATHIAPPAN ,  Ludovic GODET

IPC: G03F7/00 ,  B29C59/00 ,  B29C71/02 ,  B29C71/04 ,  B82Y10/00 ,  B82Y40/00 ,  C01G23/04 ,  C01G25/02 ,  C01G33/00

CPC classification number: G03F7/0002 ,  B29C59/005 ,  B29C71/02 ,  B29C71/04 ,  C01G23/043 ,  C01G25/02 ,  C01G33/00 ,  B82Y10/00 ,  B82Y40/00 ,  C01P2004/64

Abstract: Embodiments of the present disclosure generally relate to imprint compositions and materials and related processes useful for nanoimprint lithography (NIL). In one or more embodiments, a method for preparing an imprinted surface is provided and includes disposing an imprint composition on a substrate, contacting the imprint composition with a stamp having a pattern, converting the imprint composition to an imprint material having the pattern, and removing the stamp from the imprint material. The imprint composition may contain one or more types of nanoparticles, one or more surface ligands, one or more solvents, one or more additives, and one or more acrylates.

公开(公告)号：US20210223686A1

公开(公告)日：2021-07-22

申请号：US16941304

申请日：2020-07-28

Applicant: Applied Materials, Inc.

Inventor： Amita JOSHI ,  Ian Matthew MCMACKIN ,  Rami HOURANI ,  Yingdong LUO ,  Sivapackia GANAPATHIAPPAN ,  Ludovic GODET

IPC: G03F7/00 ,  C01G23/04 ,  C01G33/00 ,  C01G25/02 ,  B29C59/00 ,  B29C71/04 ,  B29C71/02

Abstract: Embodiments of the present disclosure generally relate to imprint compositions and materials and related processes useful for nanoimprint lithography (NIL). In one or more embodiments, an imprint composition contains one or more types of nanoparticles, one or more surface ligands, one or more solvents, one or more additives, and one or more acrylates.