摘要:
A delay locked loop operates over a wide range of frequencies and has high accuracy, small silicon area usage, low power consumption and a short lock time. The DLL combines an analog domain and a digital domain. The digital domain is responsible for initial lock and operational point stability and is frozen after the lock is reached. The analog domain is responsible for normal operation after lock is reached and provides high accuracy using smaller silicon area and low power.
摘要:
A multi-chip package has a substrate, and a plurality of memory dies stacked on the substrate. A plurality of buffer dies each has an input and an output. The input of a first buffer die is connectable to an external input. The output of a last buffer die of the plurality of buffer dies is connectable to an external output. Each of the remaining inputs and outputs is connected respectively to an output or an input of another of the plurality of buffer dies to form a serial connection between the plurality of buffer dies. Each of the memory dies is connected to one of the buffer dies, such that each buffer die is connected to its respective memory dies in parallel arrangement. A memory device having multiple serially interconnected MCPs and a controller is also described.
摘要:
The invention relates to a network and to a method of operating a network. The network comprises a plurality of stations each able to transmit and receive data so that the network can transmit data between stations via at least one selected intermediate station. The network further comprises a plurality of levels of stations including a first level comprising user and/or seed stations, a second level comprising auxiliary stations providing access to auxiliary networks, a third level comprising at least one location management station, and a fourth level comprising at least one authentication station. The method comprises transmitting, from or on behalf of a station on the first level requiring authentication, to an authentication station via one or more stations, an authentication request message. In response, the authentication station transmits authentication data to authenticate the station on the first level.
摘要:
A mass storage memory module system including a memory module having memory holding members which can be connected to each other, and removably connected to a memory controller. One or more modular memory holding members can be connected to each other to expand the overall storage capacity of the memory module. The presently described expandable memory module does not have a storage capacity limit. A memory holding member includes a plate, a plane, a board and another material having at least one memory device, or, on which at least one memory device is held or to which at least one memory device is mounted.
摘要:
A system, method and machine-readable medium are provided to configure a non-volatile memory (NVM) including a plurality of NVM modules, in a system having a hard disk drive (HDD) and an operating system (O/S). In response to a user selection of a hybrid drive mode for the NVM, the plurality of NVM modules are ranked according to speed performance. Boot portions of the O/S are copied to a highly ranked NVM module, or a plurality of highly ranked NVM modules, and the HDD and the highly ranked NVM modules are assigned as a logical hybrid drive of the computer system. Ranking each of the plurality of NVM modules can include carrying out a speed performance test. This approach can provide hybrid disk performance using conventional hardware, or enhance performance of an existing hybrid drive, while taking into account relative performance of available NVM modules.
摘要翻译:在具有硬盘驱动器(HDD)和操作系统(O / S)的系统中,提供了一种系统,方法和机器可读介质来配置包括多个NVM模块的非易失性存储器(NVM)。 响应于用户选择NVM的混合驱动模式,根据速度性能对多个NVM模块进行排序。 O / S的引导部分被复制到高排名的NVM模块或多个高排名的NVM模块,并且HDD和高排名的NVM模块被分配为计算机系统的逻辑混合驱动器。 对多个NVM模块中的每一个进行排序可以包括进行速度性能测试。 这种方法可以使用常规硬件提供混合磁盘性能,或提高现有混合驱动器的性能,同时考虑可用的NVM模块的相对性能。
摘要:
An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices.
摘要:
A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device.
摘要:
A charge pump for use in a Phase Locked Loop/Delay Locked Loop minimizes static phase error through the use of an operational amplifier. The operational amplifier also mitigates the effects of low power supply voltage.
摘要:
Disclosed is a method of manufacturing flash memory with a vertical cell stack structure. The method includes forming source lines in a cell area of a substrate having an ion-implanted well and forming an alignment mark relative to the source lines. The alignment mark is formed in the substrate outside the cell area of the substrate. After formation of the source lines, cell stacking layers are formed. After forming the cell stacking layers, cell pillars in the cell stacking layers are formed at locations relative to the previously formed source lines using the alignment mark to correctly locate the cell pillars.
摘要:
A flash memory device having at least one bank, where the each bank has an independently configurable page size. Each bank includes at least two memory planes having corresponding page buffers, where any number and combination of the memory planes are selectively accessed at the same time in response to configuration data and address data. The configuration data can be loaded into the memory device upon power up for a static page configuration of the bank, or the configuration data can be received with each command to allow for dynamic page configuration of the bank. By selectively adjusting a page size the memory bank, the block size is correspondingly adjusted.