公开(公告)号：US20150228514A1

公开(公告)日：2015-08-13

申请号：US14178681

申请日：2014-02-12

Applicant: Axcelis Technologies, Inc.

Inventor： William Davis Lee ,  Steve Drummond

IPC: H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67109 ,  H01L21/6833

Abstract: An electrostatic clamping system has an electrostatic chuck having one or more electrodes and a clamping surface and one or more fluid passages therethrough. A plurality of fluid sources has a respective plurality of fluids associated therewith, wherein each of the plurality of fluids are chemically distinct from one another and has a respective viable fluid temperature range associated therewith. A thermal unit is configured to heat and/or cool the plurality of fluids to one or more predetermined temperature setpoints. A valve assembly is configured to selectively fluidly couple each of the plurality of fluid sources to the one or more fluid passages of the electrostatic chuck. A controller is also configured to selectively fluidly couple the one or more fluid passages of the electrostatic chuck with a selected one or more of the plurality of fluid sources via a control of the valve assembly.

Abstract translation: 静电夹持系统具有静电卡盘，该静电卡盘具有一个或多个电极和夹紧表面以及穿过其中的一个或多个流体通道。 多个流体源具有与其相关联的相应的多个流体，其中多个流体中的每一个在化学上彼此不同并且具有与之相关联的相应的可行的流体温度范围。 热单元被配置为将多个流体加热和/或冷却到一个或多个预定温度设定点。 阀组件构造成选择性地将多个流体源中的每一个流体地耦合到静电卡盘的一个或多个流体通道。 控制器还被配置成经由阀组件的控制选择性地将静电卡盘的一个或多个流体通道与多个流体源中选择的一个或多个流体耦合。

公开(公告)号：US09064673B2

公开(公告)日：2015-06-23

申请号：US13915149

申请日：2013-06-11

Applicant: Axcelis Technologies, Inc.

Inventor： William Davis Lee ,  Kevin J. Hoyt ,  David Shanner ,  Jason Beringer

IPC: H01L21/673 ,  H01J37/20 ,  H01J37/317 ,  H01L21/687 ,  H01L21/683

CPC classification number: H01J37/20 ,  H01J37/3171 ,  H01J2237/08 ,  H01J2237/2007 ,  H01J2237/201 ,  H01L21/6831 ,  H01L21/68785 ,  Y10S901/31

Abstract: A workpiece carrier comprises a first plate having a first outer diameter, a first inner diameter, and a first recess extending a first distance from the first inner diameter toward the first outer diameter. The workpiece carrier further comprises a second plate having a second outer diameter, a second inner diameter, and a second recess extending a second distance from the second inner diameter toward the second outer diameter. A plurality of mating features associated with the first plate and second plate are configured to selectively fix a position of a first workpiece between the first plate and second plate within the first recess and second recess.

Abstract translation: 工件载体包括具有第一外径，第一内径和从第一内径向第一外径延伸第一距离的第一凹槽的第一板。 工件托架还包括具有第二外径，第二内径和从第二内径向第二外径延伸第二距离的第二凹槽的第二板。 与第一板和第二板相关联的多个配合特征被配置为在第一凹部和第二凹部内选择性地将第一工件的位置固定在第一板和第二板之间。

公开(公告)号：US08933424B1

公开(公告)日：2015-01-13

申请号：US14086578

申请日：2013-11-21

Applicant: Axcelis Technologies, Inc.

Inventor： Shu Satoh

IPC: H01J37/317 ,  H01J49/10 ,  H01L21/265 ,  H01J37/04

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/24535 ,  H01J2237/24542 ,  H01J2237/30472

Abstract: An ion implantation system and method are provided where an ion source generates an ion and a mass analyzer mass analyzes the ion beam. A beam profiling apparatus translates through the ion beam along a profiling plane in a predetermined time, wherein the beam profiling apparatus measures the beam current across a width of the ion beam concurrent with the translation, therein defining a time and position dependent beam current profile of the ion beam. A beam monitoring apparatus is configured to measure the ion beam current at an edge of the ion beam over the predetermined time, therein defining a time dependent ion beam current, and a controller determines a time independent ion beam profile by dividing the time and position dependent beam current profile of the ion beam by the time dependent ion beam current, therein by cancelling fluctuations in ion beam current over the predetermined time.

Abstract translation: 提供离子注入系统和方法，其中离子源产生离子并且质量分析器质量分析离子束。 光束分析装置在预定时间内沿着成像平面翻转离子束，其中光束分布装置测量与平移同时的离子束的宽度上的束电流，其中限定了时间和位置相关的束电流分布 离子束。 光束监测装置被配置为在预定时间内测量在离子束的边缘处的离子束电流，其中限定了时间依赖的离子束电流，并且控制器通过将时间和位置相关的分配来确定时间独立的离子束分布 离子束的束电流分布由时间依赖的离子束电流，其中通过在预定时间内消除离子束电流的波动。

公开(公告)号：US20150002983A1

公开(公告)日：2015-01-01

申请号：US13930220

申请日：2013-06-28

Applicant: Axcelis Technologies, Inc.

Inventor： William D. Lee ,  Ashwin M. Purohit

IPC: H01L21/683

CPC classification number: H01L21/6833 ,  H02N13/00

Abstract: A Johnsen-Rahbek (J-R) electrostatic clamp is provided for clamping a workpiece, wherein the J-R clamp has a dielectric layer having a clamping surface associated with the workpiece and a backside surface generally opposing the clamping surface. The dielectric layer has a plurality of regions, wherein each of the plurality of regions comprises one of a plurality of dielectric materials. Each of the plurality of dielectric materials has a baseline resistivity that is different from the remainder of the plurality of dielectric materials, and each of the plurality of regions of the dielectric layer has a baseline resistivity that is different from the remainder of the plurality of regions of the dielectric layer. A plurality of electrically conductive electrodes are associated with the backside surface of the dielectric layer, wherein each of the plurality of electrically conductive electrodes are associated with one or more of the plurality of regions of the dielectric layer.

Abstract translation: 提供了Johnsen-Rahbek（J-R）静电夹以夹紧工件，其中J-R夹具具有介电层，该电介质层具有与工件相关联的夹紧表面和与夹紧表面大致相对的背面。 电介质层具有多个区域，其中多个区域中的每个区域包括多个介电材料中的一个。 多个介电材料中的每一个具有与多个介电材料的其余部分不同的基线电阻率，并且介电层的多个区域中的每一个具有不同于多个区域的其余部分的基线电阻率 的介电层。 多个导电电极与电介质层的背面相关联，其中多个导电电极中的每一个与电介质层的多个区域中的一个或多个相关联。

公开(公告)号：US20130099131A1

公开(公告)日：2013-04-25

申请号：US13713251

申请日：2012-12-13

Applicant: Axcelis Technologies, Inc.

Inventor： Edward C. Eisner

IPC: H01J3/14 ,  G21K5/10

CPC classification number: H01J3/14 ,  G21K5/10 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/049 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.

Abstract translation: 本发明涉及一种用于在离子束在工件的表面上扫描时改变离子束截面形状的方法和装置，以产生具有改进的离子束电流分布均匀性的时间平均离子束 。 在一个实施例中，离子束的横截面形状随着离子束移动穿过工件表面而变化。 离子束的不同横截面形状分别具有不同的光束轮廓（例如，沿着光束轮廓在不同位置处具有峰值），使得快速改变离子束的横截面形状导致光束电流的平滑 工件暴露于的轮廓（例如，减小与各个梁轮廓相关联的峰）。 所得到的平滑光束电流分布提供了改进的束电流均匀性和改进的工件剂量均匀性。

公开(公告)号：US20130026356A1

公开(公告)日：2013-01-31

申请号：US13625277

申请日：2012-09-24

Applicant: Axcelis Technologies Inc.

Inventor： Bo H. Vanderberg ,  Steven C. Hays ,  Andy Ray

IPC: H01J3/14 ,  H01J49/26

CPC classification number: H01J37/317 ,  H01J37/147 ,  H01J37/244 ,  H01J37/3171 ,  H01J49/30 ,  H01J2237/006 ,  H01J2237/182 ,  H01J2237/24542

Abstract: A method comprising introducing an injected gas (e.g., Argon, Xenon) into a beam line region comprising a magnetic scanner is provided herein. The injected gas improves beam current by enhancing (e.g., increasing, decreasing) charge neutralization of the magnetic ion beam (e.g., the ion beam at regions where the scanning magnetic field is non-zero) thereby reducing the current loss due to the zero field effect (ZFE). By reducing the current loss in regions having a magnetic field, the magnetic beam current is increased (e.g., the beam current is increased in regions where the magnetic field is non-zero) raising the overall beam current in a uniform manner over an entire scan path and thereby reducing the effect of the ZFE. In other words, the ZFE is removed by effectively minimizing it through an increase in the magnetized beam current.

Abstract translation: 本文提供了将注入的气体（例如，氩，氙）引入到包括磁扫描器的束线区域中的方法。 注入的气体通过增强（例如，增加，减少）磁离子束的电荷中和（例如，扫描磁场不为零的区域处的离子束）来改善束流，从而减少由于零场导致的电流损耗 效果（ZFE）。 通过减小具有磁场的区域中的电流损耗，磁束电流增加（例如，在磁场不为零的区域中，束电流增加）在整个扫描中以均匀的方式提高整个束电流 路径，从而减少ZFE的影响。 换句话说，ZFE通过磁化束电流的增加有效地最小化而被去除。

公开(公告)号：US20040238123A1

公开(公告)日：2004-12-02

申请号：US10249962

申请日：2003-05-22

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： Alan Frederick Becknell ,  Thomas James Buckley ,  David Ferris ,  Richard E. Pingree JR. ,  Palanikumaran Sakthivel ,  Aseem Kumar Srivastava ,  Carlo Waldfried

IPC: C23F001/00

CPC classification number: H01J37/32357 ,  H01J37/3244 ,  H01J37/32844 ,  Y02C20/30

Abstract: A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).

Abstract translation: 等离子体装置，等离子体装置的各种部件，以及无氧和无氮的方法，用于有效地去除光致抗蚀剂材料，并且用含有低k电介质层的碳和/或氢的底物后蚀刻残留物。

公开(公告)号：US20040235299A1

公开(公告)日：2004-11-25

申请号：US10249964

申请日：2003-05-22

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： Aseem Kumar Srivastava ,  Palanikumaran Sakthivel ,  Thomas James Buckley

IPC: H01L021/00 ,  H01L021/302 ,  H01L021/461

CPC classification number: H01L21/67253 ,  G03F7/427 ,  H01J37/32357 ,  H01J37/32834 ,  H01J37/32935 ,  H01J2237/3342 ,  H01L21/67069

Abstract: A plasma ashing apparatus for removing organic matter from a substrate including a low k dielectric, comprising a first gas source; a plasma generating component in fluid communication with the first gas source; a process chamber in fluid communication with the plasma generating component; an exhaust conduit in fluid communication with the process chamber; wherein the exhaust conduit comprises an inlet for a second gas source and an afterburner assembly coupled to the exhaust conduit, wherein the inlet is disposed intermediate to the process chamber and an afterburner assembly, and wherein the afterburner assembly comprises means for generating a plasma within the exhaust conduit with or without introduction of a gas from the second gas source; and an optical emission spectroscopy device coupled to the exhaust conduit comprising collection optics focused within a plasma discharge region of the afterburner assembly. An endpoint detection process for an oxygen free and nitrogen free plasma process comprises monitoring an optical emission signal of an afterburner excited species in an exhaust conduit of the plasma asher apparatus. The process and apparatus can be used with carbon and/or hydrogen containing low k dielectric materials.

Abstract translation: 一种用于从包括第一气体源的低k电介质的衬底去除有机物质的等离子体灰化装置; 与所述第一气体源流体连通的等离子体产生部件; 与所述等离子体产生部件流体连通的处理室; 与处理室流体连通的排气管道; 其中所述排气管道包括用于第二气体源的入口和耦合到所述排气管道的后燃烧器组件，其中所述入口设置在所述处理室和加力燃烧器组件的中间，并且其中所述后燃烧器组件包括用于在所述排气管内产生等离子体的装置 具有或不从第二气体源引入气体的排气导管; 以及耦合到所述排气导管的光发射光谱装置，包括聚焦在所述后燃器组件的等离子体放电区域内的收集光学器件。 用于无氧和无氮等离子体工艺的端点检测方法包括监测等离子体灰化装置的排气管道中的后燃器激发物质的光发射信号。 该方法和装置可以与含有低k电介质材料的碳和/或氢一起使用。

公开(公告)号：US20040100110A1

公开(公告)日：2004-05-27

申请号：US10305731

申请日：2002-11-26

Applicant: Axcelis Technologies, Inc.

Inventor： Paul W. Baumann ,  Michel Pharand ,  Donald N. Polner

IPC: B25J015/06

CPC classification number: B25J15/0616 ,  B25J9/0012 ,  H01L21/6838

Abstract: An end effector for installation on a robotic arm for transporting a plurality of semiconductor wafers from one location to another features a ceramic end effector body portion that includes a plurality of wafer engaging fingers that each feature wafer support pads. The wafer support pads are adapted to support a semiconductor wafer surface, and at least one of the support pads has a vacuum orifice. The body portion features an interior vacuum passageway having a first end that is adapted to connect to a vacuum source and a second end that terminates at the vacuum orifices such that a reduced gas pressure at the first end causes a vacuum to be exerted at the vacuum orifices. The interior passageway is formed from a groove in the end effector body portion and an end effector backplate that is sealingly connected to the end effector body portion to completely cover the groove from the first end to the second end. The ceramic body portion can be made of alumina or silicon carbide.

Abstract translation: 用于安装在机器人手臂上用于将多个半导体晶片从一个位置传送到另一个位置的端部执行器具有陶瓷端部执行器主体部分，其包括多个晶片接合指状物，每个晶片接合指状物都具有晶片支撑垫。 晶片支撑垫适于支撑半导体晶片表面，并且至少一个支撑垫具有真空孔。 主体部分具有内部真空通道，其具有适于连接到真空源的第一端和终止于真空小孔处的第二端，使得第一端处的减小的气体压力在真空下施加真空 孔。 内部通道由末端执行器主体部分中的凹槽和端部执行器后板形成，该后端板执行器密封地连接到端部执行器主体部分，以从第一端到第二端完全覆盖凹槽。 陶瓷体部分可以由氧化铝或碳化硅制成。

公开(公告)号：US20250166959A1

公开(公告)日：2025-05-22

申请号：US18934357

申请日：2024-11-01

Applicant: Axcelis Technologies, Inc.

Inventor： Andy Ray

IPC: H01J37/147 ,  H01J37/317

Abstract: An ion implantation system includes an ion source that generates ions and produces an ion beam along a beamline, a mass analyzer positioned downstream of the ion source that generates a magnetic field according to a selected charge-to-mass ratio. A beamline formed by ion beam is directed to a workpiece target. A gating apparatus includes one or more of: a mechanical gating device configured to block or deflect the ion beam from contacting a workpiece target; or a power control gating device configured to cut off power to the ion source. The beam-to-workpiece target translation mechanism changes the beam-to-workpiece target position while the ion beam is gated by the gating apparatus. Methods for implanting ions in predetermined profiles on a workpiece are disclosed with multiple scans. These systems and methods allow for implantation profiles with smooth curvature and/or sharp differences in dosage characteristics at adjacent positions.