公开(公告)号：US20040238123A1

公开(公告)日：2004-12-02

申请号：US10249962

申请日：2003-05-22

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： Alan Frederick Becknell ,  Thomas James Buckley ,  David Ferris ,  Richard E. Pingree JR. ,  Palanikumaran Sakthivel ,  Aseem Kumar Srivastava ,  Carlo Waldfried

IPC: C23F001/00

CPC classification number: H01J37/32357 ,  H01J37/3244 ,  H01J37/32844 ,  Y02C20/30

Abstract: A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).

Abstract translation: 等离子体装置，等离子体装置的各种部件，以及无氧和无氮的方法，用于有效地去除光致抗蚀剂材料，并且用含有低k电介质层的碳和/或氢的底物后蚀刻残留物。

公开(公告)号：US20040099283A1

公开(公告)日：2004-05-27

申请号：US10065861

申请日：2002-11-26

Applicant: Axcelis Technologies, Inc.

Inventor： Carlo Waldfried ,  Qingyaun Han ,  John Hallock ,  Ivan Berry ,  Ari Margolis ,  Orlando Escorcia

IPC: C25F001/00

CPC classification number: H01L21/31058 ,  G03F7/42 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116

Abstract: A method for drying and removing contaminants from a low-k dielectric film of an integrated circuit wafer, the method comprising exposing the low k dielectric layer to photons; and simultaneously with, prior to, or subsequent to the photon exposure, exposing the substrate to a process effective to remove the contaminants without causing degradation of the low k dielectric layer, wherein the process is selected from the group consisting of a heat process, a vacuum process, an oxygen free plasma process, and combinations thereof.

Abstract translation: 一种用于从集成电路晶片的低k电介质膜干燥和去除污染物的方法，所述方法包括将低k电介质层暴露于光子; 并且与光子曝光同时，在光子曝光之前或之后，使基板暴露于有效除去污染物而不引起低k电介质层退化的过程，其中该工艺选自加热工艺， 真空工艺，无氧等离子体工艺及其组合。