公开(公告)号：US10233564B2

公开(公告)日：2019-03-19

申请号：US15722051

申请日：2017-10-02

申请人： SUMCO CORPORATION

发明人： Yasuhito Narushima ,  Shinichi Kawazoe ,  Fukuo Ogawa

IPC分类号： C30B15/04 ,  C30B15/22 ,  C30B15/30 ,  C30B29/06

摘要： A smonocrystalline silicon include a straight body formed without generating a remelt growth area of 200 μm or more in a height in a growth direction. Growth striations, which are formed radially across the straight body, include a growth striation with an outer end interrupted by another growth striation not to reach a peripheral portion of the straight body. The remelt growth area has the growth striation with the interrupted outer end.

公开(公告)号：US10224203B2

公开(公告)日：2019-03-05

申请号：US15538898

申请日：2015-11-25

申请人： SUMCO CORPORATION

发明人： Ryo Hirose ,  Ryosuke Okuyama ,  Kazunari Kurita

IPC分类号： H01L21/265 ,  H01L21/02 ,  H01L27/146 ,  H01L21/322 ,  H01L21/324

摘要： Provided is a method of producing a semiconductor epitaxial wafer having enhanced gettering ability. The method of producing a semiconductor epitaxial wafer includes: a first step of irradiating a surface of a semiconductor wafer with cluster ions to form a modified layer that is located in a surface portion of the semiconductor wafer and that includes a constituent element of the cluster ions in solid solution; and a second step of forming an epitaxial layer on the modified layer of the semiconductor wafer. The first step is performed in a state in which a temperature of the semiconductor wafer is maintained at lower than 25° C.

公开(公告)号：US20190064098A1

公开(公告)日：2019-02-28

申请号：US16092364

申请日：2017-01-18

申请人： SUMCO CORPORATION

发明人： Kazutaka ERIGUCHI ,  Shuichi SAMATA ,  Noritomo MITSUGI ,  Ayumi MASADA

IPC分类号： G01N27/24 ,  C30B29/06 ,  C30B15/20

摘要： Provided is a method of measuring a carbon concentration of a silicon sample, the method including introducing hydrogen atoms into a measurement-target silicon sample; subjecting the measurement-target silicon sample into which hydrogen atoms have been introduced to evaluation by an evaluation method of evaluating a trap level in a silicon band gap, without an electron beam irradiation treatment; and determining the carbon concentration of the measurement-target silicon sample on the basis of an evaluation result at least one trap level selected from the group consisting of Ec-0.10 eV, Ec-0.13 eV and Ec-0.15 eV, among the evaluation results obtained by the evaluation, wherein the determined carbon concentration is lower than 1.0E+16 atoms/cm3.

公开(公告)号：US20190030676A1

公开(公告)日：2019-01-31

申请号：US16069300

申请日：2016-12-02

申请人： SUMCO CORPORATION

发明人： Toshiharu NAKAJIMA ,  Kazuaki KOZASA ,  Katsuhisa SUGIMORI ,  Syunya KOBUCHI

IPC分类号： B24B37/10 ,  H01L21/3105 ,  H01L21/306

摘要： A silicon wafer single-side polishing method that can significantly improve the stepped minute defect occurrence rate is provided. The silicon wafer single-side polishing method comprises: a first polishing step of performing polishing on one side of a silicon wafer under a first polishing condition; and a second polishing step of performing polishing on the silicon wafer under a second polishing condition in which at least one of an applied pressure and a relative speed in the first polishing condition is changed, after the first polishing step, wherein a polishing rate ratio according to the first polishing condition is higher than a polishing rate ratio according to the second polishing condition.

公开(公告)号：US10192754B2

公开(公告)日：2019-01-29

申请号：US15311307

申请日：2015-04-21

申请人： SUMCO CORPORATION

发明人： Jun Fujise ,  Toshiaki Ono

IPC分类号： H01L21/322 ,  H01L29/32 ,  C30B15/20 ,  C30B33/02 ,  C30B15/00

摘要： A method for producing an epitaxial silicon wafer, including a preliminary thermal treatment step of subjecting a silicon wafer to thermal treatment for increasing a density of oxygen precipitates, the silicon wafer being one that has an oxygen concentration in a range of 9×1017 atoms/cm3 to 16×1017 atoms/cm3, contains no dislocation cluster and no COP, and contains an oxygen precipitation suppression region, and an epitaxial layer forming step of forming an epitaxial layer on a surface of the silicon wafer after the preliminary thermal treatment step. The production method further includes a thermal treatment condition determining step of determining a thermal treatment condition in the preliminary thermal treatment step, based on a ratio of the oxygen precipitation suppression region of the silicon wafer before the preliminary thermal treatment step is carried out.

公开(公告)号：US20180374891A1

公开(公告)日：2018-12-27

申请号：US16061692

申请日：2016-12-05

申请人： SUMCO CORPORATION

发明人： Takeshi KADONO ,  Kazunari KURITA

IPC分类号： H01L27/146 ,  H01L31/18 ,  C30B25/18 ,  C30B25/20 ,  C30B29/06 ,  H01J37/317

CPC分类号： H01L27/14687 ,  C30B25/186 ,  C30B25/20 ,  C30B29/06 ,  H01J37/3171 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/26506 ,  H01L21/26566 ,  H01L21/3221 ,  H01L21/324 ,  H01L31/1804

摘要： A semiconductor epitaxial wafer production method that can increase the peak concentration of hydrogen in a surface portion of a semiconductor wafer after epitaxial layer formation is provided. A method of producing a semiconductor epitaxial wafer comprises: a first step of irradiating a surface of a semiconductor wafer with cluster ions containing hydrogen as a constituent element, to form a modifying layer formed from, as a solid solution, a constituent element of the cluster ions including hydrogen in a surface portion of the semiconductor wafer; a second step of, after the first step, irradiating the semiconductor wafer with electromagnetic waves of a frequency of 300 MHz or more and 3 THz or less, to heat the semiconductor wafer; and a third step of, after the second step, forming an epitaxial layer on the modifying layer of the semiconductor wafer.

公开(公告)号：US10161883B2

公开(公告)日：2018-12-25

申请号：US15757856

申请日：2016-08-03

申请人： SUMCO CORPORATION

发明人： Tatsuya Osada ,  Masahiko Egashira ,  Tomokatsu Uchino

IPC分类号： G01N21/95 ,  G01N21/64

摘要： Provided is a wafer inspection method capable of examining whether pits are formed in wafer surfaces. The wafer inspection method includes the steps of: choosing defects of a wafer using a first optical system; selecting potential pits from the chosen defects; and classifying the potential pits into pits and defects other than the pits using a second optical system.

公开(公告)号：US10153323B2

公开(公告)日：2018-12-11

申请号：US15104396

申请日：2014-12-10

申请人： SUMCO CORPORATION

发明人： Ryosuke Okuyama

IPC分类号： H01L21/265 ,  H01L27/146 ,  H01L21/322

摘要： A production method for a semiconductor epitaxial wafer includes: a first step of irradiating a surface of a semiconductor wafer with cluster ions to form a modified layer that is located in a surface portion of the semiconductor wafer and that includes a constituent element of the cluster ions in solid solution; and a second step of forming an epitaxial layer on the modified layer of the semiconductor wafer. The first step is performed such that a portion of the modified layer in terms of a thickness direction becomes an amorphous layer and an average depth of an amorphous layer surface at a semiconductor wafer surface-side of the amorphous layer is at least 20 nm from the surface of the semiconductor wafer.

公开(公告)号：US20180337306A1

公开(公告)日：2018-11-22

申请号：US15773391

申请日：2016-11-01

申请人： SUMCO CORPORATION

发明人： Koji MATSUMOTO ,  Toshiaki ONO ,  Hiroshi AMANO ,  Yoshio HONDA

IPC分类号： H01L33/12 ,  C23C16/34 ,  C30B29/40 ,  C30B25/02 ,  H01L29/20 ,  H01L29/34 ,  H01L33/32 ,  H01L33/02 ,  H01L33/00 ,  H01L21/02

摘要： A manufacturing method for a group III nitride semiconductor substrate is provided with a first step of forming a second group III nitride semiconductor layer on a substrate; a second step of forming a protective layer on the second group III nitride semiconductor layer; a third step of selectively forming pits on dislocation portions of the second group III nitride semiconductor layer by gas-phase etching applied to the protective layer and the second group III nitride semiconductor layer; and a fourth step of forming a third group III nitride semiconductor layer on the second group III nitride semiconductor layer and/or the remaining protective layer so as to allow the pits to remain.

公开(公告)号：US20180320288A1

公开(公告)日：2018-11-08

申请号：US15773323

申请日：2016-11-01

申请人： SUMCO CORPORATION

发明人： Kaoru KAJIWARA ,  Ryota SUEWAKA ,  Hideki TANAKA ,  Takahiro KANEHARA

IPC分类号： C30B15/14 ,  C30B15/10 ,  C30B29/06

摘要： A method of manufacturing a single crystal is provided with a raw material melting step of heating a silicon raw material in a quartz crucible using a carbon heater to generate a silicon melt; and a crystal pull-up step of pulling up a single crystal from the silicon melt generated by the raw material melting step, wherein the silicon raw material is heated with the maximum surface temperature of a first part of the heater that is positioned above at least the upper end of the quartz crucible maintained below 1500° C. in the raw material melting step.