公开(公告)号：USRE49657E1

公开(公告)日：2023-09-12

申请号：US17038941

申请日：2020-09-30

申请人： SUMCO CORPORATION

发明人： Takuro Iwanaga ,  Kazunari Kurita ,  Takeshi Kadono

IPC分类号： H01L21/322 ,  H01L21/265 ,  H01L21/02 ,  H01L29/36

CPC分类号： H01L21/3221 ,  H01L21/0262 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/26506 ,  H01L21/26566 ,  H01L29/36

摘要： Provided is an epitaxial wafer having an excellent gettering capability and a suppressed formation of epitaxial defects. The epitaxial wafer has a specified resistivity, and includes a modifying layer formed on a surface portion of the silicon wafer and composed of a predetermined element including at least carbon, in the form of a solid solution in the silicon wafer; and an epitaxial layer having a resistivity that is higher than the resistivity of the silicon wafer, wherein a concentration profile of the predetermined element in the modifying layer in a depth direction thereof meets a specified full width half maximum and a specified peak concentration.

公开(公告)号：US10224203B2

公开(公告)日：2019-03-05

申请号：US15538898

申请日：2015-11-25

申请人： SUMCO CORPORATION

发明人： Ryo Hirose ,  Ryosuke Okuyama ,  Kazunari Kurita

IPC分类号： H01L21/265 ,  H01L21/02 ,  H01L27/146 ,  H01L21/322 ,  H01L21/324

摘要： Provided is a method of producing a semiconductor epitaxial wafer having enhanced gettering ability. The method of producing a semiconductor epitaxial wafer includes: a first step of irradiating a surface of a semiconductor wafer with cluster ions to form a modified layer that is located in a surface portion of the semiconductor wafer and that includes a constituent element of the cluster ions in solid solution; and a second step of forming an epitaxial layer on the modified layer of the semiconductor wafer. The first step is performed in a state in which a temperature of the semiconductor wafer is maintained at lower than 25° C.

公开(公告)号：US20240297201A1

公开(公告)日：2024-09-05

申请号：US18609373

申请日：2024-03-19

申请人： SUMCO Corporation

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L27/146 ,  C23C14/48 ,  C30B25/18 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02 ,  H01L21/265 ,  H01L21/322 ,  H01L29/167 ,  H01L29/36

CPC分类号： H01L27/14687 ,  C23C14/48 ,  C30B25/186 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02658 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/3221 ,  H01L27/14689 ,  H01L29/167 ,  H01L29/36

摘要： Provided is a semiconductor epitaxial wafer having metal contamination reduced by achieving higher gettering capability, a method of producing the semiconductor epitaxial wafer, and a method of producing a solid-state image sensing device using the semiconductor epitaxial wafer. The method of producing a semiconductor epitaxial wafer 100 includes a first step of irradiating a semiconductor wafer 10 containing at least one of carbon and nitrogen with cluster ions 16 thereby forming a modifying layer 18 formed from a constituent element of the cluster ions 16 contained as a solid solution, in a surface portion of the semiconductor wafer 10; and a second step of forming a first epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer 10.

公开(公告)号：US20170077171A1

公开(公告)日：2017-03-16

申请号：US15274790

申请日：2016-09-23

申请人： SUMCO Corporation

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L27/146 ,  H01L21/322

CPC分类号： H01L27/14698 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/26566 ,  H01L21/3221 ,  H01L27/1464 ,  H01L27/14687 ,  H01L29/36

摘要： The present invention provides a method of more efficiently producing a semiconductor epitaxial wafer, which can suppress metal contamination by achieving higher gettering capability.A method of producing a semiconductor epitaxial wafer 100 according to the present invention includes a first step of irradiating a semiconductor wafer 10 with cluster ions 16 to form a modifying layer 18 formed from a constituent element of the cluster ions 16 in a surface portion 10A of the semiconductor wafer; and a second step of forming an epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer 10.

摘要翻译： 根据本发明的制造半导体外延晶片100的方法包括：第一步骤，用聚簇离子16照射半导体晶片10，以形成由簇离子16的构成元素形成的改性层18，该修饰层18在表面部分10A的 半导体晶片; 以及在半导体晶片10的改性层18上形成外延层20的第二步骤。

公开(公告)号：US10861709B2

公开(公告)日：2020-12-08

申请号：US16488758

申请日：2018-01-12

申请人： SUMCO CORPORATION

发明人： Satoshi Shigematsu ,  Ryosuke Okuyama ,  Kazunari Kurita

IPC分类号： H01L21/322 ,  H01L21/265

摘要： Provided is a method of evaluating the impurity gettering capability of an epitaxial silicon wafer, which allows for very precise evaluation of the impurity gettering behavior of a modified layer formed immediately under an epitaxial layer, the modified layer containing carbon in solid solution. In this method, a modified layer located immediately under an epitaxial layer, the modified layer containing carbon in solid solution, is analyzed by three-dimensional atom probe microscopy, and the impurity gettering capability of the modified layer is evaluated based on a three-dimensional map of carbon in the modified layer, obtained by the analysis.

公开(公告)号：US10453682B2

公开(公告)日：2019-10-22

申请号：US15996924

申请日：2018-06-04

申请人： SUMCO CORPORATION

发明人： Takuro Iwanaga ,  Kazunari Kurita ,  Takeshi Kadono

IPC分类号： H01L21/265 ,  H01L21/322 ,  H01L29/34 ,  H01L21/02 ,  H01L29/36

摘要： Provided is an epitaxial wafer having an excellent gettering capability and a suppressed formation of epitaxial defects. The epitaxial wafer has a specified resistivity, and includes a modifying layer formed on a surface portion of the silicon wafer and composed of a predetermined element including at least carbon, in the form of a solid solution in the silicon wafer; and an epitaxial layer having a resistivity that is higher than the resistivity of the silicon wafer, wherein a concentration profile of the predetermined element in the modifying layer in a depth direction thereof meets a specified full width half maximum and a specified peak concentration.

公开(公告)号：US10396120B2

公开(公告)日：2019-08-27

申请号：US16061692

申请日：2016-12-05

申请人： SUMCO CORPORATION

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L21/02 ,  C30B25/18 ,  C30B25/20 ,  C30B29/06 ,  H01J37/317 ,  H01L21/265 ,  H01L31/18 ,  H01L21/322 ,  H01L21/324

摘要： A semiconductor epitaxial wafer production method that can increase the peak concentration of hydrogen in a surface portion of a semiconductor wafer after epitaxial layer formation is provided. A method of producing a semiconductor epitaxial wafer comprises: a first step of irradiating a surface of a semiconductor wafer with cluster ions containing hydrogen as a constituent element, to form a modifying layer formed from, as a solid solution, a constituent element of the cluster ions including hydrogen in a surface portion of the semiconductor wafer; a second step of, after the first step, irradiating the semiconductor wafer with electromagnetic waves of a frequency of 300 MHz or more and 3 THz or less, to heat the semiconductor wafer; and a third step of, after the second step, forming an epitaxial layer on the modifying layer of the semiconductor wafer.

公开(公告)号：US20240282801A1

公开(公告)日：2024-08-22

申请号：US18609418

申请日：2024-03-19

申请人： SUMCO Corporation

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L27/146 ,  C23C14/48 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02 ,  H01L21/265 ,  H01L21/322 ,  H01L21/324 ,  H01L29/167

CPC分类号： H01L27/14687 ,  C23C14/48 ,  C30B25/186 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02658 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/2658 ,  H01L21/3221 ,  H01L21/324 ,  H01L27/14689 ,  H01L29/167

摘要： The present invention provides a method of producing a semiconductor epitaxial wafer, which can suppress metal contamination by achieving higher gettering capability.
The method of producing a semiconductor epitaxial wafer includes a first step of irradiating a surface portion 10A of a semiconductor wafer 10 with cluster ions 16 thereby forming a modifying layer 18 formed from carbon and a dopant element contained as a solid solution that are constituent elements of the cluster ions 16, in the surface portion 10A of the semiconductor wafer; and a second step of forming an epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer, the epitaxial layer 20 having a dopant element concentration lower than the peak concentration of the dopant element in the modifying layer 18.

公开(公告)号：US11245014B2

公开(公告)日：2022-02-08

申请号：US16956232

申请日：2018-08-24

申请人： SUMCO CORPORATION

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L29/36 ,  H01L21/02 ,  H01L21/265 ,  H01L31/18 ,  H01L27/146

摘要： Provided is a method of producing an epitaxial silicon wafer having high gettering capability resulting in even more reduced white spot defects in a back-illuminated solid-state imaging device. The method includes: a first step of irradiating a surface of a silicon wafer with cluster ions of CnHm (n=1 or 2, m=1, 2, 3, 4, or 5) generated using a Bernas ion source or an IHC ion source, thereby forming, in the silicon wafer, a modifying layer containing, as a solid solution, carbon and hydrogen that are constituent elements of the cluster ions; and a subsequent second step of forming a silicon epitaxial layer on the surface. In the first step, peaks of concentration profiles of carbon and hydrogen in the depth direction of the modifying layer are made to lie in a range of more than 150 nm and 2000 nm or less from the surface.

公开(公告)号：US10062569B2

公开(公告)日：2018-08-28

申请号：US15104692

申请日：2014-12-10

申请人： SUMCO CORPORATION

发明人： Takuro Iwanaga ,  Kazunari Kurita ,  Takeshi Kadono

IPC分类号： H01L21/02 ,  H01L21/265 ,  H01L21/322 ,  H01L29/36

CPC分类号： H01L21/02658 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/26506 ,  H01L21/26566 ,  H01L21/3221 ,  H01L29/36

摘要： Provided is a method of manufacturing an epitaxial wafer having an excellent gettering capability while suppressing formation of epitaxial defects. The method includes: a cluster ion irradiation step of irradiating a surface of a silicon wafer having a resistivity of from 0.001 Ω·cm to 0.1 Ω·cm with cluster ions containing at least carbon at a dose of from 2.0×1014/cm2 to 1.0×1016/cm2 to form, on a surface portion of the silicon wafer, a modifying layer composed of a constituent element of the cluster ions in the form of a solid solution; and an epitaxial layer forming step of forming, on the modifying layer on the silicon wafer, an epitaxial layer having a resistivity that is higher than the resistivity of the silicon wafer.