公开(公告)号：US09373780B2

公开(公告)日：2016-06-21

申请号：US13955035

申请日：2013-07-31

Applicant: Headway Technologies, Inc.

Inventor： Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

IPC: H01L21/00 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01F10/30 ,  H01L29/66 ,  H01F10/32 ,  H01F41/30

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L29/66007 ,  H01L29/66984 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract translation: 公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / X）n或（CoX）n组合物（其中n为2至30）X覆盖层叠层中的垂直磁各向异性（PMA） 是V，Rh，Ir，Os，Ru，Au，Cr，Mo，Cu，Ti，Re，Mg或Si中的一种，CoX是无序合金。 种子层优选为NiCr，NiFeCr，Hf或其复合物，厚度为10至100埃。 此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

公开(公告)号：US09373777B2

公开(公告)日：2016-06-21

申请号：US14529242

申请日：2014-10-31

Applicant: Headway Technologies, Inc.

Inventor： Guenole Jan ,  Witold Kula ,  Ru Ying Tong ,  Yu Jen Wang

IPC: H01L43/00 ,  H01L33/00 ,  H01L43/10 ,  G01R33/09 ,  G01R33/12 ,  H01L43/08 ,  H01L43/12 ,  G11B5/127 ,  G11C11/16 ,  H01L43/02 ,  G11B5/39

CPC classification number: H01L43/10 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/1278 ,  G11B5/3909 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A MTJ for a spintronic device includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract translation: 用于自旋电子器件的MTJ包括薄层种子层，其通过（Co / Ni）n组合物或类似物，其中n为2至30，在上层层叠层中增强垂直磁各向异性（PMA）。种子层优选为NiCr ，NiFeCr，Hf或其复合物，其厚度为10至100埃。 此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 在CoFeB层和层叠层之间可以存在Ta插入层，以促进CoFeB层中的（100）结晶。 层叠层可以用作MTJ中的参考层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

公开(公告)号：US09331271B2

公开(公告)日：2016-05-03

申请号：US14098604

申请日：2013-12-06

Applicant: Headway Technologies, Inc.

Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Guangli Liu ,  Robert Beach ,  Witold Kula ,  Tai Min

IPC: H01L43/12 ,  C23C14/34 ,  G11C11/16 ,  B82Y25/00

CPC classification number: H01L43/12 ,  B82Y25/00 ,  C23C14/3414 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.

公开(公告)号：US09299367B1

公开(公告)日：2016-03-29

申请号：US14813887

申请日：2015-07-30

Applicant: Headway Technologies, Inc.

Inventor： YuHui Tang ,  Yaguang Wei ,  Yue Liu ,  Jiun-Ting Lee ,  Moris Dovek

IPC: G11B5/127

CPC classification number: G11B5/127 ,  G11B5/1278 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315

Abstract: A perpendicular magnetic recording (PMR) writer is disclosed wherein a 19-24 kG hot seed layer is formed between a gap layer and a 10-19 kG magnetic layer in a partially wrapped around shield structure involving side shields and trailing shield to reduce internal flux shunting, improve writability, and enable side gap and write gap dimensions 5-10 nm smaller than typical writers for conventional and shingled magnetic recording. Side shields have a bottom surface formed along a plane that is parallel to the main pole leading edge, and at a down-track distance from 50 nm above to 100 nm below the leading edge. Cross-track and down-track field gradients are improved by fully coupling the trailing shield and side shield hot seed layers. Also, side shield hot seed layers have a height

Abstract translation: 公开了一种垂直磁记录（PMR）写入器，其中在间隙层和10-19kG磁性层之间形成一个19-24kG的热种子层，该部分缠绕的屏蔽结构包括侧屏蔽和后屏蔽以减少内部通量 分流，改善可写性，并使边缘间隙和写入间隙尺寸比常规和带状磁记录的典型作者小5-10纳米。 侧面屏蔽具有沿平行于主极前缘的平面形成的底表面，并且在前缘下方50nm至100nm之间的下轨道距离处。 通过完全耦合后盾和侧屏热种子层，提高了跨轨道和下轨道场梯度。 此外，侧屏热种子层的高度<0.15微米并且小于10-19kG侧屏蔽层高度以减少内部通量分流。

公开(公告)号：US20150380016A1

公开(公告)日：2015-12-31

申请号：US14319681

申请日：2014-06-30

Applicant: Yoshitaka SASAKI ,  Kazuki SATO ,  Hiroyuki ITO ,  Shigeki TANEMURA ,  Hironori ARAKI ,  Kazumasa YASUDA

Inventor： Yoshitaka SASAKI ,  Kazuki SATO ,  Hiroyuki ITO ,  Shigeki TANEMURA ,  Hironori ARAKI ,  Kazumasa YASUDA

IPC: G11B5/127 ,  G11B5/17 ,  G11B5/11

CPC classification number: G11B5/1278 ,  G11B5/11 ,  G11B5/17 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163 ,  Y10T29/49048

Abstract: A first side shield has a first sidewall and a second sidewall. A second side shield has a third sidewall and a fourth sidewall. The distance between the first sidewall and the third sidewall decreases with increasing proximity to the top surface of a substrate. The second and fourth sidewalls are close to perpendicular to the top surface of the substrate. Each of the second and fourth sidewalls has an edge farthest from the top surface of the substrate, the edge being parallel to the medium facing surface. The main pole has a first, a second, a third and a fourth side surface. The first side surface is opposed to the first sidewall. A portion of the second side surface is opposed to the second sidewall. The third side surface is opposed to the third sidewall. A portion of the fourth side surface is opposed to the fourth sidewall.

Abstract translation: 第一侧屏蔽件具有第一侧壁和第二侧壁。 第二侧屏蔽件具有第三侧壁和第四侧壁。 第一侧壁和第三侧壁之间的距离随着靠近衬底顶表面的增加而减小。 第二和第四侧壁靠近垂直于基板的顶表面。 第二和第四侧壁中的每一个具有距衬底顶表面最远的边缘，该边缘平行于介质面向表面。 主极具有第一，第二，第三和第四侧面。 第一侧表面与第一侧壁相对。 第二侧表面的一部分与第二侧壁相对。 第三侧面与第三侧壁相对。 第四侧面的一部分与第四侧壁相对。

公开(公告)号：US09188650B2

公开(公告)日：2015-11-17

申请号：US14245641

申请日：2014-04-04

Applicant: Headway Technologies, Inc.

Inventor： Yuchen Zhou ,  Yimin Guo

IPC: G11B5/39 ,  G01R33/09 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/32 ,  H01F41/30

CPC classification number: G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G01R33/091 ,  G11B5/3906 ,  G11B5/3925 ,  G11B5/398 ,  G11B2005/3996 ,  H01F10/325 ,  H01F10/3254 ,  H01F41/302

Abstract: A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. The side stripes of soft magnetic material absorb external field flux and concentrate the flux to flow into the sensor's edges to promote larger MR sensor magnetization rotation. Side stripes may be located in the plane of the free layer a maximum distance of 0.1 microns, above a plane that includes a top surface of the free layer, or below a plane that includes the bottom surface of the magnetic sensor. Edges of each side stripe may be aligned above or below a portion of the magnetic sensor.

Abstract translation: 描述了具有增加的灵敏度，较低噪声和改善的频率响应的磁传感器。 传感器的自由层是带状的，并且通过磁软，高磁导率材料的带在每个长边缘处紧密地侧接。 软磁材料的侧面条纹吸收外部磁场通量，并将助焊剂浓缩到流入传感器的边缘，以促进较大的MR传感器磁化旋转。 侧条可以位于自由层的平面中，最大距离为0.1微米，在包括自由层的顶表面的平面之上，或者在包括磁传感器的底表面的平面之下。 每个侧条纹的边缘可以在磁传感器的一部分上方或下方对准。

公开(公告)号：US09170879B2

公开(公告)日：2015-10-27

申请号：US12456923

申请日：2009-06-24

Applicant: Hsu Kai Yang

Inventor： Hsu Kai Yang

IPC: G06F11/10 ,  G11C16/34 ,  G11C29/46

CPC classification number: G06F11/106 ,  G06F11/1096 ,  G11C16/3418 ,  G11C16/349 ,  G11C29/46

Abstract: A data scrubbing apparatus corrects disturb data errors occurring in an array of memory cells such as SMT MRAM cells. The data scrubbing apparatus receives an error indication that an error has occurred during a read operation of a grouping of memory cells within the array of memory cells. The data scrubbing apparatus may generate an address describing the location of the memory cells to be scrubbed. The data scrubbing apparatus then commands the array of memory cells to write back the corrected data. Based on a scrub threshold value, the data scrubbing apparatus writes the corrected data back after a specific number of errors. The data scrubbing apparatus may further suspend writing back during a writing of data. The data scrubbing apparatus provides a busy indicator externally during a write back of corrected data.

Abstract translation: 数据擦除装置校正在诸如SMT MRAM单元的存储单元阵列中发生的干扰数据错误。 数据擦除装置接收在存储器单元阵列内的一组存储器单元的读取操作期间发生错误的错误指示。 数据擦除装置可以生成描述要擦除的存储器单元的位置的地址。 然后，数据擦除装置命令存储器单元阵列回写校正的数据。 基于擦除阈值，数据擦除装置在经过特定数量的错误之后写入校正后的数据。 数据擦除装置可以在写入数据期间进一步中止写回。 在校正数据的回写期间，数据擦除装置在外部提供忙指示符。

公开(公告)号：US09103012B2

公开(公告)日：2015-08-11

申请号：US12931854

申请日：2011-02-11

Applicant: Chao-Peng Chen ,  Jas Chudasama ,  Chien-Li Lin ,  David Wagner

Inventor： Chao-Peng Chen ,  Jas Chudasama ,  Chien-Li Lin ,  David Wagner

IPC: C25D5/34 ,  C23C2/02 ,  C23C14/58 ,  C25D5/02 ,  G11B5/17 ,  C23F1/12

CPC classification number: C23F1/12 ,  C23C2/02 ,  C23C14/5873 ,  C25D5/022 ,  C25D5/34 ,  G11B5/17

Abstract: A method of activating a copper seed layer during a plating process is disclosed that comprises application of vapor generated by an ultrasonic wave nebulizer. The energized vapor droplets include water and a weak organic acid such as acetic acid, lactic acid, citric acid, uric acid, oxalic acid, or formic acid that have a vapor pressure proximate to that of water. The weak organic acid preferably has a pKa high enough to avoid Cu etching but is sufficiently acidic to remove copper oxide at a rate that is compatible with high throughput manufacturing. In one embodiment, weak acid/water vapor is applied to a substrate in a spin bowl and is followed by a deionized water rinse step in the same spin bowl. Improved wettability results in improved uniformity in subsequently plated copper films. Considerable cost savings is realized as a result of reduced chemical consumption and higher product yields.

Abstract translation: 公开了一种在镀覆工艺期间激活铜籽晶层的方法，其包括施加由超声波雾化器产生的蒸气。 通电的蒸气滴包括水和弱的有机酸如乙酸，乳酸，柠檬酸，尿酸，草酸或甲酸，其蒸气压接近于水。 弱有机酸优选具有足够高的pKa以避免Cu蚀刻，但是足够的酸性以与高通量制造相容的速率除去氧化铜。 在一个实施方案中，将弱酸/水蒸汽施加到旋转碗中的基底上，然后在同一旋转碗中进行去离子水漂洗步骤。 改进的润湿性导致随后镀覆的铜膜的均匀性提高。 由于化学品消耗减少和产品产量提高，实现了大量的成本节约。

公开(公告)号：US09053713B2

公开(公告)日：2015-06-09

申请号：US13651437

申请日：2012-10-14

Applicant: Headway Technologies, Inc.

Inventor： Shengyuan Wang ,  Kunliang Zhang ,  Min Li

IPC: G11B5/127 ,  G11B5/31 ,  C23C14/02 ,  C23C14/16

CPC classification number: G11B5/1278 ,  C23C14/024 ,  C23C14/16 ,  C23C14/35 ,  C23C14/351 ,  C23C14/358 ,  G11B5/1877 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T428/1171

Abstract: A sub-structure, suitable for use as a hot seed on which to form a perpendicular magnetic main write pole, is described. It is made up of a buffer layer of atomic layer deposited alumina on which there are one or more seed layers having a body-centered cubic (bcc) crystal structure. Finally, the high coercivity magnetic film lies on the seed layer(s). It is critical that the high coercivity magnetic film be deposited at a very low deposition rate (around 1 Angstrom per second).

Abstract translation: 描述适合用作形成垂直磁性主要写入极的热种子的子结构。 它由原子层沉积的氧化铝的缓冲层组成，其上有一个或多个具有体心立方（bcc）晶体结构的种子层。 最后，高矫顽力磁性膜位于种子层上。 高矫顽磁性膜以非常低的沉积速率（约1埃每秒）沉积是至关重要的。

公开(公告)号：US09040178B2

公开(公告)日：2015-05-26

申请号：US12284409

申请日：2008-09-22

Applicant: Tong Zhao ,  Hui-Chuan Wang ,  Yu-Chen Zhou ,  Min Li ,  Kunliang Zhang

Inventor： Tong Zhao ,  Hui-Chuan Wang ,  Yu-Chen Zhou ,  Min Li ,  Kunliang Zhang

IPC: G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09

CPC classification number: H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1143

Abstract: A TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, COBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. One embodiment is represented by (NBC/BC)n where n≧2. A second embodiment is represented by (NBC/BC)n/NBC where n≧1. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is

Abstract translation: 一种TMR传感器，其包括具有由CoFeB，CoFeBM，CoB，COBM或CoBLM制成的至少一个含B（BC）层的自由层和由CoFe，CoFeM制成的多个不含B的（NBC） 或CoFeLM，其中L和M是Ni，Ta，Ti，W，Zr，Hf，Tb或Nb之一。 一个实施方案由（NBC / BC）n表示，其中n≥2。 第二实施例由（NBC / BC）n / NBC表示，其中n≥1。 在每个实施例中，NBC层接触隧道势垒，并且各自具有2至8埃厚度的NBC层以与10至80埃厚的BC层交替地形成。 总自由层厚度<100埃。 这里描述的自由层配置能够在实现高TMR比，低磁致伸缩，低RA和低Hc值的同时实现显着的降噪（SNR增强）。