Abstract:
Lead frames having plate-like heat sink portion and three leads, one of which is integral with heat sink, are manufactured by blanking heat sink and leads, bending the integral lead relative to the heat sink, forming ends of the remaining leads, and again bending integral leads so that leads are in a plane which is parallel to, and spaced from, the heat sink.
Abstract:
A semiconductor device includes a single crystal substrate comprising a flat surface which has a (311) crystal plane with a tolerance of + OR - 2* with respect to said (311) lattice plane. An insulating film is formed on the flat top surface of the substrate.
Abstract:
A method for plastic molding an electrical assembly having a plurality of upstanding tubular members with predetermined peripheral deformations. During molding operations, the tubular members are further deformed by pressures between two facing die parts such that tolerance of the thickness of the final assembly is less than the sum of the tolerances of the individual parts. The tubular members have radially extending surfaces forming electrical contacts along one surface of the assembly. Another metal plate attached to the tubular members forms substantially the opposite surface for providing a good heat sink connection. The tubular members are spaced peripherally of the metal plate such that mold pressures are evenly applied along the plate for preventing plastic encapsulating material from seeping over the plate. Portions of the plate may extend outwardly from the tubular members with the provision of a rigidizing and apertured deformation in the base plate for preventing flexure of the plate in a mold. The apertures in the rigidizing member permit plastic flow for solidly locking the plastic encapsulating material to the base plate. Plastic encapsulating material is provided inside the tubular members by runners in other parts of the electronic assembly.
Abstract:
A hermetically sealed semiconductor device is described. Within a hermetically sealed container an anhydrous organic salt is placed to form a strong adsorbent agent for the adsorption of water and other undesired substances. Copper sulfate is a preferred organic salt from which the water of crystallization has been removed before the sealing of the container.
Abstract:
A METHOD OF SEALING A SEMI-CONDUCTOR ASSEMBLY OF THE KIND INCLUDING A CUP-SHAPED HOUSING, A SEMI-CONDUCTOR DEVICE WITHIN THE HOUSING, A CLOSURE MEMBER CLOSING THE HOUSING, A METAL SLEEVE EXTENDING FROM SAID CLOSURE MEMBER, AND A LEAD ELECTRICALLY CONNECTED AT ONE END TO SAID SEMI-CONDUCTOR DEVICE AND EXTENDING FROM THE HOUSING WITHIN THE SLEEVE, COMPRISES THE STEPS OF FLATTENING A PART OF THE SLEEVE REMOTE FROM THE HOUSING SO THAT THE WIRE LEAD IS ALSO FLATTENED. THE FLATTENED PART OF THE SLEEVE IS THEN SUBJECT TO PRESSURE WHILE AN ELECTRIC CURRENT IS PASSED THERETHROUGH, THE ELECTRIC CURRENT CAUSING THE PORTION OF THE LEAD WITHIN THE FLATTENED PART OF THE SLEEVE TO BECOME WELDED TO THE SLEEVE, AND THEREBY FORM A SEAL WITHIN THE SLEEVE BETWEEN THE INTERIOR OF THE HOUSING AND ATMOSPHERE.
Abstract:
An improved hermetically sealed semiconductor device and the method of making that device. The improvement inhibits deterioration of the electrical characteristics of hermetically sealed semiconductor devices having a getter body included within the sealed housing for environmental control therein, along with the semiconductive body. A small quantity of insulating liquid is added to the housing sufficient to cover the surface of the semiconductive body but insufficient to cover an effective area of the getter body.
Abstract:
IN A RECTIFIER A SILICON CRYSTAL CONTAINING A JUNCTION IS PROVIDED WITH A BEVELED PERIPHERY HAVING A GLASS LAYER THEREON WHICH EXHIBITS A THERMAL EXPANSION DIFFERENTIAL WITH RESPECT TO THE SEMICONDUCTIVE CRYSTAL OF LESS THAN 5X10**-4, A DIELECTRIC STRENGTH OF AT LEAST 100 VOLTS/MIL, AND AN INSULATIVE RESISTANCE OF AT LEAST 10**10 OHM-CM. SILCON RUBBER OVERLIES THE GLASS LAYER ACTING AS A SHOCK PROTECTION SHIELD AND AS A SUPPLEMENTARY PASSIVATION LAYER. THE SILICONE RUBBER EXHIBITS A DIELECTRIC STRENGTH OF AT LEAST 100 VOLTS/MIL AND AN INSULATION RESISTANCE OF AT LEAST 10**10 OHM-CM. ELECTRICAL CONTACT TO THE SILICON CRYSTAL IS PROVIDED THROUGH A SOLDER LAYER HAVING A MODULUS OF ELEASTICITY OF LESS THAN 1.1X10**7.