Abstract:
IN A RECTIFIER A SILICON CRYSTAL CONTAINING A JUNCTION IS PROVIDED WITH A BEVELED PERIPHERY HAVING A GLASS LAYER THEREON WHICH EXHIBITS A THERMAL EXPANSION DIFFERENTIAL WITH RESPECT TO THE SEMICONDUCTIVE CRYSTAL OF LESS THAN 5X10**-4, A DIELECTRIC STRENGTH OF AT LEAST 100 VOLTS/MIL, AND AN INSULATIVE RESISTANCE OF AT LEAST 10**10 OHM-CM. SILCON RUBBER OVERLIES THE GLASS LAYER ACTING AS A SHOCK PROTECTION SHIELD AND AS A SUPPLEMENTARY PASSIVATION LAYER. THE SILICONE RUBBER EXHIBITS A DIELECTRIC STRENGTH OF AT LEAST 100 VOLTS/MIL AND AN INSULATION RESISTANCE OF AT LEAST 10**10 OHM-CM. ELECTRICAL CONTACT TO THE SILICON CRYSTAL IS PROVIDED THROUGH A SOLDER LAYER HAVING A MODULUS OF ELEASTICITY OF LESS THAN 1.1X10**7.