公开(公告)号：US20170145553A1

公开(公告)日：2017-05-25

申请号：US15347582

申请日：2016-11-09

申请人： Applied Materials, Inc.

发明人： Zhendong LIU ,  Wenting HOU ,  Jianxin LEI ,  Donny YOUNG ,  William M. LU

IPC分类号： C23C4/134 ,  C23C16/455 ,  C23C16/50 ,  C25D17/00 ,  C23C18/48 ,  C23C14/34 ,  C25D3/02 ,  C23C16/44 ,  C23C18/31

CPC分类号： C23C4/134 ,  C23C14/34 ,  C23C14/564 ,  C23C16/4404 ,  C23C16/45525 ,  C23C16/50 ,  C23C18/1646 ,  C23C18/1689 ,  C23C18/31 ,  C23C18/48 ,  C25D3/02 ,  C25D5/48 ,  C25D7/00 ,  C25D17/00 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/32559 ,  H01J37/32871 ,  H01J37/3426 ,  H01J37/3441

摘要： Implementations of the present disclosure relate to an improved shield for use in a processing chamber. In one implementation, the shield includes a hollow body having a cylindrical shape that is substantially symmetric about a central axis of the body, and a coating layer formed on an inner surface of the body. The coating layer is formed the same material as a sputtering target used in the processing chamber. The shield advantageously reduces particle contamination in films deposited using RF-PVD by reducing arcing between the shield and the sputtering target. Arcing is reduced by the presence of a coating layer on the interior surfaces of the shield.

公开(公告)号：US20170098530A1

公开(公告)日：2017-04-06

申请号：US15287675

申请日：2016-10-06

申请人： APPLIED MATERIALS, INC.

发明人： William JOHANSON ,  Kirankumar SAVANDAIAH ,  Xin WANG ,  Prashant PRABHU

IPC分类号： H01J37/34 ,  H01J37/32 ,  C23C14/35

CPC分类号： H01J37/3441 ,  C23C14/3407 ,  C23C14/564 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/32642 ,  H01J37/32651

摘要： Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes: a one-piece process kit shield having a cylindrical body having an upper portion and a lower portion; an adapter section extending radially outward and having a resting surface to support the one-piece process kit shield on walls of a chamber and a sealing surface on which a chamber lid rests to seal off an inner volume of the chamber when the one-piece process kit shield is placed in the chamber; a heat transfer channel extending through the adapter section; and a protruding section extending radially inward from the lower portion; a resting bracket having an upper portion coupled to the adapter section and a lower portion extending radially inward; a cover ring disposed beneath the protruding section; and a deposition ring disposed beneath the cover ring.

公开(公告)号：US09593410B2

公开(公告)日：2017-03-14

申请号：US13785880

申请日：2013-03-05

申请人： APPLIED MATERIALS, INC.

发明人： Zhenbin Ge ,  Alan A. Ritchie

IPC分类号： C23C14/00 ,  C25B11/00 ,  C25B13/00 ,  C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34

CPC分类号： C23C14/54 ,  C23C14/3471 ,  C23C14/35 ,  H01J37/32165 ,  H01J37/32403 ,  H01J37/3405 ,  H01J37/3441 ,  H01J37/3464 ,  H01J37/3476

摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, a physical vapor deposition chamber includes a first RF power supply having a first base frequency and coupled to one of a target or a substrate support; and a second RF power supply having a second base frequency and coupled to one of the target or the substrate support, wherein the first and second base frequencies are integral multiples of each other, wherein the second base frequency is modified to an offset second base frequency that is not an integral multiple of the first base frequency.

摘要翻译： 本文提供了处理衬底的方法和装置。 在一些实施例中，物理气相沉积室包括具有第一基本频率并且耦合到目标或基板支架之一的第一RF电源; 以及具有第二基本频率并耦合到所述目标或所述衬底支架之一的第二RF电源，其中所述第一和第二基本频率是彼此的整数倍，其中所述第二基本频率被修改为偏移的第二基本频率 这不是第一个基本频率的整数倍。

公开(公告)号：US09476122B2

公开(公告)日：2016-10-25

申请号：US14204873

申请日：2014-03-11

申请人： Applied Materials, Inc.

发明人： Martin Lee Riker ,  Keith A. Miller ,  Anantha K. Subramani

IPC分类号： C23C16/458 ,  H01J37/34 ,  H01J37/32 ,  C23C14/34 ,  C23C14/56 ,  C23C14/50

CPC分类号： C23C16/4585 ,  C23C14/34 ,  C23C14/50 ,  C23C14/564 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/3408 ,  H01J37/3441

摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.

公开(公告)号：US09404174B2

公开(公告)日：2016-08-02

申请号：US13799014

申请日：2013-03-13

申请人： APPLIED MATERIALS, INC.

发明人： Donny Young ,  Alan A. Ritchie

IPC分类号： H01J37/34 ,  C23C14/34

CPC分类号： C23C14/34 ,  C23C14/3407 ,  H01J37/3408 ,  H01J37/3411 ,  H01J37/3435 ,  H01J37/3441

摘要： In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

摘要翻译： 在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得 在支撑构件和密封环以及密封环和目标组件之间形成密封件。

公开(公告)号：US09177763B2

公开(公告)日：2015-11-03

申请号：US13837064

申请日：2013-03-15

申请人： APPLIED MATERIALS, INC.

发明人： Muhammad Rasheed ,  Alan A. Ritchie ,  Isaac Porras ,  Keith A. Miller

IPC分类号： H01J37/244 ,  H01J37/32 ,  H01J37/34

CPC分类号： H01J37/32816 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/3405 ,  H01J37/3441

摘要： A method and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for measuring pressure of a substrate processing chamber may include a shield having an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, a gas injection adapter disposed about an outer wall of the shield, a pressure measuring conduit formed within the gas injection adapter, wherein the pressure measuring conduit is fluidly coupled the inner volume via a gap formed between an outer wall of the shield and substrate processing chamber components disposed proximate the shield, and wherein the gap has substantially the same pressure as the inner volume, and a pressure detector coupled to the pressure measuring conduit.

摘要翻译： 本文提供了用于物理气相沉积的方法和装置。 在一些实施例中，用于测量基板处理室的压力的装置可以包括具有环形一体式主体的屏蔽件，该主体具有内部容积，顶部开口和底部开口，其中环形单件主体的底部包括 内部向上延伸的U形部分，围绕屏蔽的外壁布置的气体注入适配器，形成在气体注入适配器内的压力测量导管，其中压力测量导管经由形成在外部 所述屏蔽壁和衬底处理室部件设置在所述屏蔽件附近，并且其中所述间隙具有与所述内部容积基本上相同的压力，以及联接到所述压力测量导管的压力检测器。

公开(公告)号：US20150303042A1

公开(公告)日：2015-10-22

申请号：US14751595

申请日：2015-06-26

申请人： CANON ANELVA CORPORATION

发明人： MASATO SHINADA ,  KEISUKE UEDA

IPC分类号： H01J37/34

CPC分类号： H01J37/3441 ,  C23C14/35 ,  H01J37/32651 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3461

摘要： The present invention provides a highly efficient magnetron sputtering apparatus in which a ground shield made of a magnetic material is disposed on the outer circumference of a target, the sputtering apparatus being capable of reducing unintended discharge between a cathode and the ground shield. The sputtering apparatus according to an embodiment includes: a backing plate connected to a power supply and having a target mounting surface; a magnet disposed on the back surface of the backing plate; a grounded shield containing a magnetic material and surrounding the target mounting surface; and a fixation part located between the shield and the backing plate at an outer circumference of the target mounting surface and serving as a magnetic member. This structure reduces magnetic field lines which pass through a space between the shield and the fixation part.

摘要翻译： 本发明提供了一种高效率的磁控溅射装置，其中由磁性材料制成的接地屏蔽设置在靶的外周上，该溅射装置能够减少阴极和接地屏蔽之间的非预期放电。 根据实施例的溅射装置包括：连接到电源并具有目标安装表面的背板; 设置在背板的后表面上的磁体; 包含磁性材料并围绕目标安装表面的接地屏蔽; 以及位于所述护罩和所述背板之间的固定部件，位于所述目标安装表面的外周并用作磁性部件。 该结构减少了通过护罩和固定部分之间的空间的磁场线。

公开(公告)号：US20150294845A1

公开(公告)日：2015-10-15

申请号：US14750717

申请日：2015-06-25

申请人： CANON ANELVA CORPORATION

发明人： Yoshimitsu SHIMANE ,  Satoshi UCHINO ,  Susumu AKIYAMA ,  Kazuaki MATSUO ,  Nobuo YAMAGUCHI

IPC分类号： H01J37/34

CPC分类号： H01J37/3441 ,  C23C14/34 ,  H01J37/32477 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/3405 ,  H01J37/347

摘要： An apparatus includes a process chamber, a substrate holder arranged in the process chamber, a first shield provided on the peripheral portion of the substrate holder, and a second shield provided inside the process chamber. The internal space of the process chamber is partitioned into an outer space and a process space to process the substrate, by at least the first shield, the second shield, and the substrate holder. The substrate holder can be driven along a driving direction perpendicular to a substrate holding surface. The length, in a direction parallel to the driving direction, of a minimum gap portion having a minimum size in a direction perpendicular to the driving direction between the first and second shields does not change even if the substrate holder is driven in the driving direction.

摘要翻译： 一种设备包括处理室，布置在处理室中的基板保持器，设置在基板保持器的周边部分上的第一屏蔽件和设置在处理室内部的第二屏蔽件。 处理室的内部空间被划分为外部空间和处理空间，以至少通过第一屏蔽，第二屏蔽和基板保持器来处理基板。 衬底保持器可以沿着垂直于衬底保持表面的驱动方向被驱动。 在平行于驱动方向的方向上，在垂直于第一和第二屏蔽之间的驱动方向的方向上具有最小尺寸的最小间隙部分的长度即使在驱动方向上被驱动基板保持架也不会改变。

公开(公告)号：US20140260544A1

公开(公告)日：2014-09-18

申请号：US13837064

申请日：2013-03-15

申请人： APPLIED MATERIALS, INC.

发明人： MUHAMMAD RASHEED ,  ALAN A. RITCHIE ,  ISAAC PORRAS ,  KEITH A. MILLER

IPC分类号： G01N7/00

CPC分类号： H01J37/32816 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/3405 ,  H01J37/3441

摘要： A method and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for measuring pressure of a substrate processing chamber may include a shield having an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, a gas injection adapter disposed about an outer wall of the shield, a pressure measuring conduit formed within the gas injection adapter, wherein the pressure measuring conduit is fluidly coupled the inner volume via a gap formed between an outer wall of the shield and substrate processing chamber components disposed proximate the shield, and wherein the gap has substantially the same pressure as the inner volume, and a pressure detector coupled to the pressure measuring conduit.

摘要翻译： 本文提供了用于物理气相沉积的方法和装置。 在一些实施例中，用于测量基板处理室的压力的装置可以包括具有环形一体式主体的屏蔽件，该主体具有内部容积，顶部开口和底部开口，其中环形单件主体的底部包括 内部向上延伸的U形部分，围绕屏蔽的外壁布置的气体注入适配器，形成在气体注入适配器内的压力测量导管，其中压力测量导管经由形成在外部 所述屏蔽壁和衬底处理室部件设置在所述屏蔽件附近，并且其中所述间隙具有与所述内部容积基本上相同的压力，以及联接到所述压力测量导管的压力检测器。

公开(公告)号：US08668816B2

公开(公告)日：2014-03-11

申请号：US11933157

申请日：2007-10-31

申请人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

发明人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC分类号： C23C14/35

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

摘要翻译： 用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者 交替地，在相同或不同的室中。 此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。 组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。 此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。 在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。 磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。 辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。 辅助磁体可以是永磁体或电磁体。