公开(公告)号：US08436326B2

公开(公告)日：2013-05-07

申请号：US12948298

申请日：2010-11-17

Applicant: Hilton F. Glavish ,  Thomas N. Horsky ,  Dale C. Jacobson ,  Sami K. Hahto ,  Masao Naito ,  Nobuo Nagai ,  Nariaki Hamamoto

Inventor： Hilton F. Glavish ,  Thomas N. Horsky ,  Dale C. Jacobson ,  Sami K. Hahto ,  Masao Naito ,  Nobuo Nagai ,  Nariaki Hamamoto

IPC: H01J37/317 ,  H01J37/28 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/09 ,  H01J2237/0044 ,  H01J2237/0455 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/057 ,  H01J2237/14 ,  H01J2237/30477 ,  H01J2237/31703 ,  H01L21/26513

Abstract: A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.

Abstract translation: 一种多用途离子注入机束线配置，包括质量分析器磁体，随后是磁扫描器和磁准直器组合，其将弯曲引入到光束路径，所述束线被构造用于使得能够注入常见的单原子掺杂离子种类簇离子，所述束线配置具有 质量分析器磁体限定磁体的铁磁极之间的相当宽度的磁极间隙和质量选择孔，分析器磁体的尺寸设计成接受来自至少约80mm高度的槽形离子源提取孔的离子束，并且在 至少约7mm的宽度，并且在对应于梁的宽度的平面中的质量选择孔处产生分散体，质量选择孔能够被设定为质量选择宽度，该质量选择宽度的尺寸被选择为选择聚集离子的束 相同的掺杂物种类但递增不同的分子量，质量选择孔径也能够基本上被设定 较窄的质量选择宽度和具有质量选择孔径的分辨率的分析器磁体足以能够选择基本上单个原子或分子量的单原子掺杂离子束，磁扫描器和磁准直器被构造为连续弯曲离子 在相同意义上的光束，其与由光束线的分析器磁体引入的弯曲的方向相反。

公开(公告)号：US08389071B2

公开(公告)日：2013-03-05

申请号：US13149352

申请日：2011-05-31

Applicant: Naruhisa Nagata

Inventor： Naruhisa Nagata

IPC: H05H1/24 ,  C23C16/00 ,  C23C16/26

CPC classification number: G11B5/8408 ,  C23C16/26 ,  C23C16/45591 ,  C23C16/513 ,  H01J37/09 ,  H01J37/32431 ,  H01J2237/026 ,  H01J2237/3321

Abstract: An apparatus and method for forming a carbon protective layer on a substrate using a plasma CVD method allows a more uniform in-plane distribution of the carbon protective layer thickness. The apparatus includes an annular anode that generates a plasma beam and a disk-shaped shield disposed between the anode and the substrate. The anode, the shield, and the substrate are concentrically arranged so that a straight line connecting the centers of the anode and the substrate is perpendicular to the deposition surface of the substrate where the carbon protective layer is to be formed. The center of the shield is also on the straight line.

Abstract translation: 使用等离子体CVD法在基板上形成碳保护层的装置和方法允许碳保护层厚度的更均匀的面内分布。 该装置包括产生等离子体束的环形阳极和设置在阳极和衬底之间的盘形屏蔽。 阳极，屏蔽体和基板同心配置，使得连接阳极和基板的中心的直线垂直于要形成碳保护层的基板的沉积表面。 盾牌的中心也在直线上。

公开(公告)号：US20130048882A1

公开(公告)日：2013-02-28

申请号：US13590906

申请日：2012-08-21

Applicant: Tadayuki Yoshitake ,  Yoichi Ando

Inventor： Tadayuki Yoshitake ,  Yoichi Ando

IPC: G21K1/00 ,  G21K5/04

CPC classification number: G21K1/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01J7/183 ,  H01J7/186 ,  H01J37/09 ,  H01J37/18 ,  H01J37/3177

Abstract: An aperture that forms a charged particle beam includes a non-evaporable getter on a surface of the aperture. The non-evaporable getter is disposed in a position to which the charged particle beam is irradiated. The degradation of the exhaust performance around a charged particle source while the charged particle source is driven is suppressed.

Abstract translation: 形成带电粒子束的孔包括在孔的表面上的不可蒸发的吸气剂。 非蒸发性吸气剂设置在被照射粒子束的位置。 抑制带电粒子源被驱动时在带电粒子源周围的排气性能的劣化。

公开(公告)号：US20130009056A1

公开(公告)日：2013-01-10

申请号：US13540783

申请日：2012-07-03

Applicant: Peter A. Kropp

Inventor： Peter A. Kropp

IPC: H01J37/04 ,  G21K5/04

CPC classification number: H01J37/1475 ,  H01J37/09 ,  H01J37/1471 ,  H01J37/26

Abstract: An arrangement and a method for imaging, examining and processing a sample using electrons. The arrangement comprises an electron microscope for providing electrons, a chamber with a sample holder on which a sample is positionable such that it can be imaged, examined and processed using the electrons. A system for magnetic field compensation in at least one spatial direction, including a compensation coil, wherein a wall of the chamber has an accommodation area, in sections thereof, for a portion of the compensation coil. Generally, only the chamber in which the sample is arranged is considered as a compensation volume. It suffice to reduce the compensation volume to the sensitive region of the electron microscope, since it is in the chamber, shortly following a final focusing and filtering, where the electron beam is most sensitive in terms of image quality when subjected to external electromagnetic interference.

公开(公告)号：US20120273690A1

公开(公告)日：2012-11-01

申请号：US13458861

申请日：2012-04-27

Applicant: Marco Jan Jaco Wieland ,  Stijn Willem Herman Karel Steenbrink ,  Alexander Hendrik Vincent van Veen ,  Alrik van den Brom

Inventor： Marco Jan Jaco Wieland ,  Stijn Willem Herman Karel Steenbrink ,  Alexander Hendrik Vincent van Veen ,  Alrik van den Brom

IPC: G21K5/04 ,  H01J3/26 ,  H01J3/14

CPC classification number: G03F7/70 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/09 ,  H01J37/12 ,  H01J37/3177 ,  H01J2237/1205

Abstract: The invention relates to a charged particle system such as a multi beam lithography system, comprising a manipulator device for manipulation of one or more charged particle beams, wherein the manipulator device comprises at least one through opening in the plane of the planar substrate for passing at least one charged particle beam there through. Each through opening is provided with electrodes arranged in a first set of multiple first electrodes along a first part of a perimeter of said through opening and in a second set of multiple second electrodes along a second part of said perimeter. An electronic control circuit is arranged for providing voltage differences the electrodes in dependence of a position of the first and second electrode along the perimeter of the through opening.

Abstract translation: 本发明涉及带电粒子系统，例如多光束光刻系统，其包括用于操纵一个或多个带电粒子束的操纵器装置，其中所述操纵器装置包括在所述平面基板的平面中的至少一个通孔，用于通过 至少一个带电粒子束通过。 每个通孔具有沿着所述通孔的周边的第一部分布置在第一组多个第一电极中的电极和沿着所述周边的第二部分的第二组多个第二电极。 电子控制电路被布置用于根据第一和第二电极沿着通孔的周边的位置来提供电极的电压差。

公开(公告)号：US08281740B2

公开(公告)日：2012-10-09

申请号：US12502344

申请日：2009-07-14

Applicant: Kazuto Yamanaka ,  Masahiro Shibamoto ,  Ayumu Miyoshi ,  Satoshi Hitomi ,  David Djulianto Djayaprawira

Inventor： Kazuto Yamanaka ,  Masahiro Shibamoto ,  Ayumu Miyoshi ,  Satoshi Hitomi ,  David Djulianto Djayaprawira

IPC: C23C16/00

CPC classification number: G11B5/8404 ,  H01J27/024 ,  H01J37/04 ,  H01J37/09 ,  H01J37/3053 ,  H01J37/32422 ,  H01J2237/022 ,  H01J2237/0453 ,  H01J2237/0822 ,  H01J2237/0825

Abstract: The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate W, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate W, and an area of a first grid in the first ion beam generator, and an area of a second grid in the second ion beam generator, each area corresponding to an opening of the substrate W, are occluded.

Abstract translation: 本发明提供一种基板处理装置，其能够抑制经由基板彼此相对布置的离子束发生器的内部的相互污染和/或损坏，以及磁记录介质制造方法。 根据本发明的实施例的基板处理装置包括将离子束施加到待加工基板W的一个表面的第一离子束发生器和将另一个表面施加离子束的第二离子束发生器 经由基板W彼此相对布置的第一离子束发生器中的第一格栅的区域和第二离子束发生器中的第二格栅的区域，每个区域对应于基板的开口 W，被遮挡。

公开(公告)号：US20120241609A1

公开(公告)日：2012-09-27

申请号：US13424808

申请日：2012-03-20

Applicant: Tatsuru Kuramoto ,  Makoto Aoshima

Inventor： Tatsuru Kuramoto ,  Makoto Aoshima

IPC: H01J37/26 ,  H01J37/244

CPC classification number: H01J37/244 ,  H01J37/09 ,  H01J37/28 ,  H01J2237/2443 ,  H01J2237/24485 ,  H01J2237/2449

Abstract: An electron detecting mechanism having a plate provided with an opening permitting passage of the primary beam, an energy filter, a first light detector, and a second light detector. The plate has first and second scintillating surface on its opposite sides. The first scintillating surface faces a sample. The second scintillating surface faces the energy filter. When the primary beam hits the sample, electrons are produced and some of them impinge as first electrons on the first scintillating surface. Consequently, first scintillation light is produced and detected by the first light detector. At the same time, some of the electrons produced from the sample pass through the opening of the plate, are repelled by the energy filter, and impinge as second electrons on the second scintillating surface. As a result, second scintillation light is produced and detected by the second light detector.

Abstract translation: 一种电子检测机构，其具有设置有允许主光束通过的开口的板，能量过滤器，第一光检测器和第二光检测器。 该板在其相对侧上具有第一和第二闪烁表面。 第一个闪烁表面面向一个样品。 第二个闪烁表面面向能量过滤器。 当主光束撞击样品时，产生电子，并且其中一些光束作为第一闪电表面上的第一电子撞击。 因此，由第一光检测器产生并检测第一闪烁光。 同时，从样品产生的一些电子通过板的开口，被能量过滤器排斥，并且作为第二电子撞击在第二闪烁表面上。 结果，由第二光检测器产生并检测第二闪烁光。

公开(公告)号：US20120193550A1

公开(公告)日：2012-08-02

申请号：US13500592

申请日：2010-10-06

Applicant: Hiroshi Tsuji ,  Ichiro Tachibana

Inventor： Hiroshi Tsuji ,  Ichiro Tachibana

IPC: H01J3/14

CPC classification number: H01J37/09 ,  F16F1/50 ,  F16F9/306 ,  F16F15/08 ,  H01J37/28 ,  H01J2237/0216

Abstract: Provided is a charged particle radiation device enabling suppression of both inclination and vertical vibration of a charged particle optical lens barrel, with a simple configuration. A charged particle radiation device according to the present invention includes a vibration damping member (19) including viscoelastic material sheets (16A and 16B) sandwiched by support plates (17A and 17B), and is configured so that a plane including a sheet surface of each viscoelastic material sheet is not perpendicular to a center axis of the charged particle optical lens barrel.

Abstract translation: 提供一种能够以简单的结构抑制带电粒子光学镜片镜筒的倾斜和垂直振动的带电粒子辐射装置。 根据本发明的带电粒子辐射装置包括一个包括被支撑板（17A和17B）夹在中间的粘弹性材料片（16A和16B）的振动阻尼件（19​​），并被构造成使得包括每个 粘弹性材料片不垂直于带电粒子光学镜片镜筒的中心轴线。

公开(公告)号：US20120145915A1

公开(公告)日：2012-06-14

申请号：US13295243

申请日：2011-11-14

Applicant: Alexander Hendrik Vincent VAN VEEN ,  Yanxia ZHANG ,  Gun Sari Mari BERGLUND ,  Pieter KRUIT

Inventor： Alexander Hendrik Vincent VAN VEEN ,  Yanxia ZHANG ,  Gun Sari Mari BERGLUND ,  Pieter KRUIT

IPC: H01J3/14

CPC classification number: H01J37/09 ,  H01J2237/002 ,  H01J2237/0453 ,  H01J2237/1534 ,  H01J2237/31774

Abstract: A charged particle lithography system for transferring a pattern onto the surface of a target, such as a wafer, comprising a charged particle source adapted for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam, the converging means comprising a first electrode, and an aperture array element comprising a plurality of apertures, the aperture array element forming a second electrode, wherein the system is adapted for creating an electric field between the first electrode and the second electrode.

Abstract translation: 一种用于将图案转印到诸如晶片的靶的表面上的带电粒子光刻系统，包括适于产生发散带电粒子束的带电粒子源，用于折射所述发散带电粒子束的会聚装置，所述会聚装置包括 第一电极和包括多个孔的孔阵列元件，所述孔阵列元件形成第二电极，其中所述系统适于在所述第一电极和所述第二电极之间产生电场。

公开(公告)号：US08198601B2

公开(公告)日：2012-06-12

申请号：US12692679

申请日：2010-01-25

Applicant: Elmar Platzgummer ,  Heinrich Fragner

Inventor： Elmar Platzgummer ,  Heinrich Fragner

IPC: H01J37/147

CPC classification number: H01J37/045 ,  H01J37/09 ,  H01J37/3026 ,  H01J2237/0437

Abstract: The disclosure relates to a method for producing a multi-beam deflector array device with a plurality of openings for use in a particle-beam exposure apparatus, in particular a projection lithography system, said method starting from a CMOS wafer and comprising the steps of generating at least one pair of parallel trenches on the first side of the wafer blank at the edges of an area where the circuitry layer below is non-functional, the trenches reaching into the layer of bulk material; passivating the sidewalls and bottom of the trenches; depositing a conducting filling material into the trenches, thus creating columns of filling material serving as electrodes; attaching metallic contact means to the top of the electrodes; structuring of an opening between the electrodes, said opening stretching across abovementioned area so that the columns are arranged opposite of each other on the sidewalls of the opening.

Abstract translation: 本发明涉及一种用于生产具有多个开口的多光束偏转器阵列器件的方法，所述多光束偏转器阵列器件用于粒子束曝光设备，特别是投影光刻系统，所述方法从CMOS晶片开始，并且包括以下步骤： 至少一对平行的沟槽在晶片坯料的第一侧上，在下面的电路层不起作用的区域的边缘处，沟槽到达散装材料层; 钝化沟槽的侧壁和底部; 将导电填充材料沉积到沟槽中，从而产生用作电极的填充材料柱; 将金属接触装置附接到电极的顶部; 构造电极之间的开口，所述开口延伸穿过上述区域，使得列在开口的侧壁上彼此相对布置。