公开(公告)号：US09105841B2

公开(公告)日：2015-08-11

申请号：US13796496

申请日：2013-03-12

Applicant: International Business Machines Corporation

Inventor： William J. Gallagher ,  Eugene J. O'Sullivan ,  Naigang Wang

IPC: H01L21/00 ,  H01L43/14 ,  B81B3/00 ,  B81C1/00 ,  H01F41/04 ,  H01L49/02

CPC classification number: B81C1/00373 ,  B81B3/0021 ,  B81B2201/038 ,  B81B2203/0118 ,  B81C1/00142 ,  B81C1/00706 ,  B81C2201/0188 ,  H01F41/046 ,  H01L28/10 ,  H01L43/10 ,  H01L43/12 ,  H01L43/14

Abstract: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.

Abstract translation: 公开了一种微机电装置及其制造方法。 在硅衬底上形成牺牲层。 在牺牲层的顶表面上形成金属层。 将软磁性材料无电沉积在金属层上以制造微机电装置。 除去牺牲层以产生与硅衬底分离的金属束。

公开(公告)号：US09105800B2

公开(公告)日：2015-08-11

申请号：US14100048

申请日：2013-12-09

Applicant: Raytheon Company

Inventor： Roland Gooch ,  Thomas Allan Kocian ,  Buu Diep ,  Adam M. Kennedy ,  Stephen H. Black

IPC: H01L31/18 ,  H01L31/0232

CPC classification number: H01L31/18 ,  B81C1/00373 ,  B81C2201/0188 ,  H01L31/02327

Abstract: A method for forming a coating of material on selected portions of a surface of a substrate having a plurality of cavities, each cavity having outer, peripheral sidewalls extending outwardly from the surface. The method includes: providing a structure having a release agent thereon; contacting top surface of the wafer with the release agent to transfer portions of the release agent to the top surface of the wafer while bottom portions of the cavities remain spaced from the release agent to produce an intermediate structure; the release agent disposed on the top surface of the wafer and with the bottom portions of the cavities void of the release agent; exposing the intermediate structure to the material to blanket coat the material on both the release agent and the bottom portions of the cavities; and selectively removing the release agent together with the coating material while leaving the coating material on the bottom portions of the cavities.

Abstract translation: 一种用于在具有多个空腔的基板的表面的选定部分上形成材料涂层的方法，每个空腔具有从表面向外延伸的外部周边侧壁。 该方法包括：提供其上具有脱模剂的结构; 使所述晶片的顶表面与所述脱模剂接触以将所述脱模剂的部分转移到所述晶片的顶表面，同时所述空腔的底部保持与所述脱模剂间隔开以产生中间结构; 所述脱模剂设置在所述晶片的顶表面上，并且所述空腔的底部部分脱离所述脱模剂; 将所述中间结构暴露于所述材料以在所述空腔的所述脱模剂和所述底部两者上均匀地涂覆所述材料; 并且与涂料一起选择性地除去脱模剂，同时将涂料留在空腔的底部。

公开(公告)号：US09023165B2

公开(公告)日：2015-05-05

申请号：US12999829

申请日：2008-06-23

Applicant: David P. Brown ,  Andrei Ollikainen ,  Esko I. Kauppinen ,  Albert G. Nasibulin ,  Jussi Heikkonen

Inventor： David P. Brown ,  Andrei Ollikainen ,  Esko I. Kauppinen ,  Albert G. Nasibulin ,  Jussi Heikkonen

IPC: B44C1/165 ,  C01B31/02 ,  B81C1/00 ,  C04B14/02 ,  C04B30/02 ,  C04B111/00

CPC classification number: B81C1/00357 ,  B81C1/00373 ,  B81C1/00476 ,  B81C1/00492 ,  B81C2201/0187 ,  B81C2201/0188 ,  B81C2201/0194 ,  C01B32/15 ,  C01B32/168 ,  C01P2004/13 ,  C01P2004/16 ,  C04B14/026 ,  C04B30/02 ,  C04B2111/00844 ,  C04B2111/00853 ,  Y10T428/24802

Abstract: A method for the production of a fibrous network-substrate component includes the steps of providing a network of fibrous material (1) on a preliminary substrate (2) by filtering high aspect ratio molecular structures (HARM-structures) from gas flow, placing the network of fibrous material (1) on the preliminary substrate (2) in proximity to a secondary substrate (3), applying a force to the network of fibrous material (1) to preferably attract the network of fibrous material (1) from the preliminary substrate (2) to the secondary substrate (3) in order to transfer the network of fibrous material (1) from the preliminary substrate (2) to the secondary substrate (3), and removing the preliminary substrate (2) from the network of fibrous material (1).

Abstract translation: 制造纤维网状基材成分的方法包括以下步骤：通过从气流中过滤高纵横比分子结构（HARM-结构），在预备基材（2）上提供纤维材料网（1），将 在初级衬底（2）上靠近次级衬底（3）的纤维材料（1）的网络，向纤维材料（1）的网络施加力以优选地将纤维材料（1）的网络从初步 为了将纤维材料（1）的网络从预备衬底（2）传送到第二衬底（3），将衬底（2）连接到第二衬底（3），并从初始衬底（2）的网络 纤维材料（1）。

公开(公告)号：US20130196504A1

公开(公告)日：2013-08-01

申请号：US13879803

申请日：2011-11-18

Applicant: Toshinori Ogashiwa ,  Masaaki Kurita ,  Takashi Nishimori ,  Yukio Kanehira

Inventor： Toshinori Ogashiwa ,  Masaaki Kurita ,  Takashi Nishimori ,  Yukio Kanehira

IPC: H01L21/48

CPC classification number: H01L21/4885 ,  B22F7/08 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/322 ,  B23K2101/40 ,  B81C1/00095 ,  B81C1/00373 ,  B81C2201/0188 ,  B81C2201/0194 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/03003 ,  H01L2224/031 ,  H01L2224/0312 ,  H01L2224/03334 ,  H01L2224/0401 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/05671 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/11334 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/11

Abstract: The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal wiring material formed on the substrate and an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material is a molded article prepared by sintering, e.g., gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 μm to 1.0 μm and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate is capable of transferring a metal wiring material to the transfer-receiving object even at a temperature for heating the transfer-receiving object of 80 to 300° C.

Abstract translation: 本发明提供一种用于将金属布线材料转印到转印接收对象的转印基板，所述转印基板包括基板，形成在所述基板上的至少一种金属布线材料和形成在所述基板和所述金属布线之间的下面的金属膜 材料，其中金属布线材料是通过烧结制备的模制品，例如纯度为99.9重量％以上的金粉末和0.01μm至1.0μm的平均粒度，并且下面的金属膜由金属 如金或合金。 转印基板即使在80〜300℃的转印接收对象的加热温度下也能够将金属配线材料转印到转印接收体。

公开(公告)号：US20130029480A1

公开(公告)日：2013-01-31

申请号：US13639221

申请日：2011-04-05

Applicant: Frank Niklaus ,  Andreas Fischer

Inventor： Frank Niklaus ,  Andreas Fischer

IPC: H01L21/20 ,  H01L21/205

CPC classification number: B81C1/00373 ,  B33Y10/00 ,  B33Y70/00 ,  B81C2201/0143 ,  B81C2201/0188 ,  B82Y20/00

Abstract: A method of making a three-dimensional structure in semiconductor material includes providing a substrate (20) is provided having at least a surface including semiconductor material. Selected areas of the surface of the substrate are exposed to a focussed ion beam whereby the ions are implanted in the semiconductor material in the selected areas. Several layers of a material selected from the group consisting of mono-crystalline, poly-crystalline or amorphous semiconductor material, are deposited on the substrate surface and between depositions focussed ion beam is used to expose the surface so as to define a three-dimensional structure. Material not part of the final structure (30) defined by the focussed ion beam is etched away so as to provide a three-dimensional structure on the substrate (20).

Abstract translation: 在半导体材料中制造三维结构的方法包括提供至少具有包括半导体材料的表面的基底（20）。 将基板的表面的选定区域暴露于聚焦的离子束，由此将离子注入到所选择的区域中的半导体材料中。 选自由单晶，多晶或非晶半导体材料组成的组的几层材料沉积在衬底表面上，并且在沉积之间聚焦离子束以暴露表面以便限定三维结构 。 不会被聚焦的离子束限定的最终结构（30）的部分的材料被蚀刻掉，以便在衬底（20）上提供三维结构。

公开(公告)号：US08361566B2

公开(公告)日：2013-01-29

申请号：US12099556

申请日：2008-04-08

Applicant: James L. Maxwell

Inventor： James L. Maxwell

IPC: C23C16/48

CPC classification number: C23C16/4418 ,  B81C99/0095 ,  B81C2201/0188 ,  C23C16/4415 ,  C23C16/455 ,  C23C16/4551 ,  C23C16/483

Abstract: A method of growing a plurality of free-standing structures comprises providing a plurality of free-standing structures, each free-standing structure having a first end coupled to a substrate, and a terminal end; providing at least one laser beam, the laser beam having a beam waste at a point proximate to the terminal end of the free-standing structure; and moving one of the plurality of freestanding structures or the beam waste to provide a growth zone proximate to the terminal end of each of the free-standing structures such that the free-standing structures grow into the growth zones by addition of decomposing precursor components. The growth rates of each of the free-standing structures are substantially the same.

Abstract translation: 生长多个独立结构的方法包括提供多个独立结构，每个独立结构具有耦合到衬底的第一端和终端; 提供至少一个激光束，所述激光束在靠近所述独立结构的终端的点处具有光束废料; 并且移动所述多个独立结构或束废料中的一个以提供靠近每个独立结构的末端的生长区，使得通过添加分解的前体组分而使自立结构生长到生长区中。 每个独立结构的增长率基本相同。

公开(公告)号：US20040012124A1

公开(公告)日：2004-01-22

申请号：US10192228

申请日：2002-07-10

Inventor： Xiaochun Li ,  Yong Yang ,  Hongseok Choi

IPC: H05B006/00

CPC classification number: B81C99/0095 ,  B22F3/004 ,  B22F2003/1056 ,  B22F2003/1058 ,  B22F2999/00 ,  B29C31/02 ,  B29C41/36 ,  B29C64/153 ,  B29C2793/00 ,  B33Y10/00 ,  B33Y30/00 ,  B81C99/0025 ,  B81C2201/0188 ,  C23C24/00 ,  C23C24/08 ,  C23C24/10 ,  C23C26/00 ,  C23C26/02 ,  Y02P10/295 ,  B22F3/1055 ,  B22F2202/01

Abstract: A method of fabricating a three-dimensional heterogeneous small-scale device includes the steps of depositing a fine heterogeneous materials (such as dry powders and biological materials) towards a substrate. In addition, the method includes sintering/cladding the material with a laser so as to produce a pattern. Then, the pattern is micro machined according to the particular design. The depositing step preferably includes providing a feed mechanism having an input to receive the material, an output, and a source of ultrasonic vibration to discharge the material from the output.

Abstract translation: 一种制造三维异质小规模装置的方法包括以下步骤：向衬底沉积精细的异质材料（如干粉和生物材料）。 此外，该方法包括用激光烧结/包覆材料以产生图案。 然后，根据具体设计对图案进行微加工。 沉积步骤优选地包括提供进料机构，其具有用于接收材料的输入端，输出端和超声波振动源，以从输出端排出材料。

公开(公告)号：US06566251B2

公开(公告)日：2003-05-20

申请号：US09871200

申请日：2001-05-31

Applicant: Mark G. Allen ,  Florent Cros ,  Jin-Woo Park ,  Kim Kieun

Inventor： Mark G. Allen ,  Florent Cros ,  Jin-Woo Park ,  Kim Kieun

IPC: H01L214763

CPC classification number: B81C99/009 ,  B81C2201/0188

Abstract: Methods for creating one or more structures in a micromachined device. In one arrangement, the methods include the steps of providing a substrate, forming upstanding nonconductive mold walls on the substrate so that first and second wells are formed, the second well being wider than the first well. The method further includes applying a first material to the surface of the wells so that the first well fills with the first material before the second well, and removing the first material from the second well while leaving a portion in the first well.