公开(公告)号：US07504051B2

公开(公告)日：2009-03-17

申请号：US10860432

申请日：2004-06-03

申请人： Rahul Sen ,  Ramesh Sivarajan ,  Thomas Rueckes ,  Brent M. Segal

发明人： Rahul Sen ,  Ramesh Sivarajan ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： C01B31/02 ,  D01F9/12 ,  H01L29/08

CPC分类号： B82Y10/00 ,  H01C17/0652 ,  H01L51/0003 ,  H01L51/0025 ,  H01L51/0048 ,  Y10S977/742 ,  Y10S977/743 ,  Y10S977/753 ,  Y10T428/29 ,  Y10T428/2982 ,  Y10T428/30

摘要： Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid containing nanotubes for use in an electronics fabrication process includes a solvent containing a plurality of nanotubes. The nanotubes are at a concentration of greater than 1 mg/L. The nanotubes are pretreated to reduce the level of metallic and particulate impurities to a preselected level, and the preselected metal and particulate impurities levels are selected to be compatible with an electronics manufacturing process. The solvent also is selected for compatibility with an electronics manufacturing process.

摘要翻译： 描述了一些可旋涂的液体和应用技术，其可以用于形成纳米管膜或受控特性的织物。 包含用于电子制造工艺的纳米管的可旋涂的液体包括含有多个纳米管的溶剂。 纳米管的浓度大于1mg / L。 预处理纳米管以将金属和颗粒杂质的水平降低到预选的水平，并且预选的金属和微粒杂质水平被选择为与电子制造工艺兼容。 溶剂也被选择用于与电子制造工艺的兼容性。

公开(公告)号：US20090052246A1

公开(公告)日：2009-02-26

申请号：US12165007

申请日：2008-06-30

申请人： Claude L. BERTIN ,  Frank GUO ,  Thomas RUECKES ,  Steven L. KONSEK ,  Mitchell MEINHOLD ,  Max STRASBURG ,  Ramesh SIVARAJAN ,  X. M. HUANG

发明人： Claude L. BERTIN ,  Frank GUO ,  Thomas RUECKES ,  Steven L. KONSEK ,  Mitchell MEINHOLD ,  Max STRASBURG ,  Ramesh SIVARAJAN ,  X. M. HUANG

IPC分类号： G11C16/04 ,  G11C11/00 ,  G11C11/50 ,  G11C5/14

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C13/0002 ,  G11C14/0054 ,  G11C2213/19 ,  G11C2213/35 ,  Y10S977/943

摘要： A non-volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory device receives and stores the corresponding logic state in response to electrical stimulus. The shadow memory device includes a non-volatile nanotube switch that stores the corresponding state of the shadow device.

摘要翻译： 非易失性存储单元包括：易失性存储装置，其响应于电刺激而存储对应的逻辑状态; 以及耦合到所述易失性存储装置的影子存储装置。 影子存储装置响应于电刺激而接收和存储对应的逻辑状态。 影子存储装置包括存储影子装置的相应状态的非易失性纳米管开关。

公开(公告)号：US20080231413A1

公开(公告)日：2008-09-25

申请号：US12111442

申请日：2008-04-29

申请人： Claude L. Bertin ,  Thomas Ruckes ,  Brent M. Segal ,  Jonathan W. Ward

发明人： Claude L. Bertin ,  Thomas Ruckes ,  Brent M. Segal ,  Jonathan W. Ward

IPC分类号： H01C10/00

CPC分类号： H01C7/06 ,  H01C7/003 ,  H01C7/005 ,  H01C7/006 ,  H01C10/306 ,  H01C17/0652 ,  H01C17/232 ,  H01C17/283 ,  H01L28/22

摘要： Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.

摘要翻译： 电阻元件包括具有预定面积的纳米纤维的图案化区域，其中纳米纤维具有选定的薄层电阻; 以及第一和第二电触头接触纳米尺寸的图案化区域并且彼此间隔开。 元件在第一和第二电触点之间的电阻由所选择的纳米尺寸的薄层电阻，纳米的面积以及第一和第二电触头间隔的关系来确定。 体积电阻是可调谐的。

公开(公告)号：US20080160734A1

公开(公告)日：2008-07-03

申请号：US11835852

申请日：2007-08-08

申请人： Claude L. BERTIN ,  Thomas RUECKES ,  X. M. H. HUANG ,  Ramesh SIVARAJAN ,  Eliodor G. GHENCIU ,  Steven L. KONSEK ,  Mitchell MEINHOLD

发明人： Claude L. BERTIN ,  Thomas RUECKES ,  X. M. H. HUANG ,  Ramesh SIVARAJAN ,  Eliodor G. GHENCIU ,  Steven L. KONSEK ,  Mitchell MEINHOLD

IPC分类号： H01L21/329

CPC分类号： H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  G11C2213/71 ,  G11C2213/72 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203

摘要： Under one aspect, a method of making a nanotube switch includes: providing a substrate having a first conductive terminal; depositing a multilayer nanotube fabric over the first conductive terminal; and depositing a second conductive terminal over the multilayer nanotube fabric, the nanotube fabric having a thickness, density, and composition selected to prevent direct physical and electrical contact between the first and second conductive terminals. In some embodiments, the first and second conductive terminals and the multilayer nanotube fabric are lithographically patterned so as to each have substantially the same lateral dimensions, e.g., to each have a substantially circular or rectangular lateral shape. In some embodiments, the multilayer nanotube fabric has a thickness from 10 nm to 200 nm, e.g., 10 nm to 50 nm. The structure may include an addressable diode provided under the first conductive terminal or deposited over the second terminal.

摘要翻译： 一方面，制造纳米管开关的方法包括：提供具有第一导电端子的基板; 在所述第一导电端子上沉积多层纳米管织物; 以及在所述多层纳米管织物上沉积第二导电端子，所述纳米管织物具有选择为防止所述第一和第二导电端子之间的直接物理和电接触的厚度，密度和组成。 在一些实施例中，第一和第二导电端子和多层纳米管织物被光刻图案化，以便每个具有基本上相同的横向尺寸，例如每个具有基本上圆形或矩形的横向形状。 在一些实施例中，多层纳米管织物的厚度为10nm至200nm，例如10nm至50nm。 该结构可以包括设置在第一导电端子下方或沉积在第二端子上的可寻址二极管。

公开(公告)号：US07385266B2

公开(公告)日：2008-06-10

申请号：US10844883

申请日：2004-05-12

申请人： Brent M. Segal ,  Thomas Rueckes ,  Bernhard Vogeli ,  Darren Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

发明人： Brent M. Segal ,  Thomas Rueckes ,  Bernhard Vogeli ,  Darren Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

IPC分类号： H01L29/66

CPC分类号： G01N27/4146 ,  B82Y15/00 ,  G11C13/025 ,  Y10S977/902 ,  Y10S977/904 ,  Y10S977/92 ,  Y10S977/921 ,  Y10S977/922 ,  Y10S977/924 ,  Y10T29/43 ,  Y10T29/49082

摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.

摘要翻译： 介绍传感器平台及其制作方法。 描述了具有包括一个或多个纳米结构如纳米管的非水平定向的传感器元件的平台。 在某些实施方案中，传感器元件具有或被制成对分析物具有亲和性。 在某些实施例中，这种传感器元件包括一个或多个原始纳米管。 在某些实施方案中，传感器元件包括衍生的或功能化的纳米管。 在某些实施例中，通过提供支撑结构来制造传感器; 在所述结构上提供一个或多个纳米管以提供用于传感器元件的材料; 以及提供用于电感测传感器元件电特性的电路。 在某些实施方案中，传感器元件包括预衍生的或预功能化的纳米管。 在其它实施例中，传感器材料在结构上提供之后或在图案化之后被衍生化或功能化。 在某些实施例中，传感器平台的大规模阵列包括多个传感器元件。

公开(公告)号：US20080079027A1

公开(公告)日：2008-04-03

申请号：US11742290

申请日：2007-04-30

申请人： Claude BERTIN ,  Thomas RUECKES ,  Brent SEGAL

发明人： Claude BERTIN ,  Thomas RUECKES ,  Brent SEGAL

IPC分类号： H01L27/11 ,  H01L29/78

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C11/54 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01L27/115 ,  H01L29/78 ,  H01L51/0048 ,  Y10S977/732 ,  Y10S977/733 ,  Y10S977/936

摘要： Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A gate structure is disposed over an insulator over the channel region and has a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the gate structure and the terminal corresponding to the gate structure. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the gate structure and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.

摘要翻译： 具有通过纳米管开关元件控制的栅极的场效应器件。 在一个实施例中，非易失性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域，并且各自与相应的端子电连通。 第二半导体类型的材料的沟道区域设置在源区和漏区之间。 栅极结构设置在沟道区域上方的绝缘体上并具有对应的端子。 纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在栅极结构和对应于栅极结构的端子之间。 纳米管开关元件在机械上可操作地处于打开和关闭状态之一，从而打开或关闭栅极结构及其对应端子之间的电连通路径。 当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。

公开(公告)号：US07342818B2

公开(公告)日：2008-03-11

申请号：US10964150

申请日：2004-10-13

申请人： Brent M. Segal ,  Darren K. Brock ,  Thomas Rueckes

发明人： Brent M. Segal ,  Darren K. Brock ,  Thomas Rueckes

IPC分类号： G11C11/00

CPC分类号： G11C23/00 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/16 ,  G11C2213/77 ,  G11C2213/81 ,  Y10S977/724 ,  Y10S977/734 ,  Y10S977/742 ,  Y10S977/942 ,  Y10S977/943

摘要： A hybrid memory system having electromechanical memory cells is disclosed. A memory cell core circuit has an array of electromechanical memory cells, in which each cell is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. An access circuit provides array addresses to the memory cell core circuit to select at least one corresponding cell. The access circuit is constructed of semiconductor circuit elements.

摘要翻译： 公开了一种具有机电存储器单元的混合存储器系统。 存储单元核心电路具有机电存储器单元的阵列，其中每个单元是横截面结，其中至少一个元件是纳米管或纳米管带。 访问电路向存储器单元核心电路提供阵列地址以选择至少一个对应的单元。 存取电路由半导体电路元件构成。

公开(公告)号：US07335528B2

公开(公告)日：2008-02-26

申请号：US11007752

申请日：2004-12-08

申请人： Thomas Rueckes ,  Brent M. Segal

发明人： Thomas Rueckes ,  Brent M. Segal

IPC分类号： H01L51/00 ,  H01L51/40

CPC分类号： G11C23/00 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/16 ,  G11C2213/77 ,  G11C2213/81 ,  H01H1/0094 ,  H01L21/76838 ,  H01L27/10 ,  H01L27/1203 ,  H01L29/413 ,  H01L51/0048 ,  H01L51/444 ,  H01L2221/1094 ,  Y10S977/75 ,  Y10S977/778 ,  Y10S977/843 ,  Y10S977/857 ,  Y10S977/888

摘要： Nanotube films and articles and methods of making the same. A conductive article includes an aggregate of nanotube segments which contact other nanotube segments to define a plurality of conductive pathways along the article. Segments may have different lengths and may be shorter than the article. Conductive articles may be made on a substrate by forming a nanotube fabric on the substrate, and defining within the fabric a pattern corresponding to the conductive article. The nanotube fabric may be grown on the substrate using a catalyst, such as a gas phase a metallic gas phase catalyst. The nanotube fabric may be formed by depositing a solution of suspended nanotubes on the substrate, which may be spun to create a spin-coating of the solution. The solution may be deposited by dipping the substrate into the solution. The nanotube fabric may be formed by spraying an aerosol having nanotubes onto the substrate.

摘要翻译： 纳米管薄膜和制作方法和制作方法。 导电制品包括与其他纳米管段接触以限定沿着制品的多个导电路径的纳米管段的聚集体。 段可以具有不同的长度并且可以比文章短。 导电制品可以通过在基底上形成纳米管织物而在基底上制成，并且在织物内限定对应于导电制品的图案。 纳米管织物可以使用催化剂如气相金属气相催化剂在基底上生长。 可以通过将悬浮的纳米管溶液沉积在基底上形成纳米管织物，该溶液可以被纺丝以产生溶液的旋涂。 可以通过将基底浸入溶液中来沉积溶液。 纳米管织物可以通过将具有纳米管的气溶胶喷射到基底上而形成。

公开(公告)号：US20070296019A1

公开(公告)日：2007-12-27

申请号：US11731946

申请日：2007-04-02

申请人： Claude Bertin ,  Thomas Rueckes ,  Brent Segal ,  Bernhard Vogeli ,  Darren Brock ,  Venkatachalam Jaiprakash

发明人： Claude Bertin ,  Thomas Rueckes ,  Brent Segal ,  Bernhard Vogeli ,  Darren Brock ,  Venkatachalam Jaiprakash

IPC分类号： H01L29/788

CPC分类号： H01L29/78 ,  B82Y10/00 ,  B82Y99/00 ,  G11C7/065 ,  G11C13/025 ,  G11C16/0416 ,  G11C17/16 ,  G11C17/165 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/17 ,  G11C2213/79 ,  H01H1/0094 ,  H01L27/10 ,  H01L27/1052 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/115 ,  H01L27/286 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42324 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

摘要： Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect, a field effect device includes a gate having a corresponding gate terminal; a source having a corresponding source terminal; a drain having a corresponding drain terminal; a control terminal; and a nanotube switching element positioned between one of the gate, source, and drain and its corresponding terminal and switchable, in response to electrical stimuli at the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and the drain and a second non-volatile state that disables current flow between the source and the drain.

公开(公告)号：US07301802B2

公开(公告)日：2007-11-27

申请号：US10864681

申请日：2004-06-09

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal ,  Frank Guo

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal ,  Frank Guo

IPC分类号： G11C11/50 ,  G11C11/52

CPC分类号： H01L29/78 ,  B82Y10/00 ,  B82Y99/00 ,  G11C7/065 ,  G11C13/025 ,  G11C16/0416 ,  G11C17/16 ,  G11C17/165 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/17 ,  G11C2213/79 ,  H01H1/0094 ,  H01L27/10 ,  H01L27/1052 ,  H01L27/112 ,  H01L27/11206 ,  H01L27/115 ,  H01L27/286 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42324 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

摘要： Circuit arrays having cells with combinations of transistors and nanotube switches. Under one embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line, word line, reference line, and release line. Bit lines are arranged orthogonally relative to word lines and each word line and bit line are shared among a plurality of cells. Each cell is selectable via the activation of the bit line and word line. Each cell includes a field effect transistor coupled to a nanotube switching element. The nanotube switching element is switchable to at least two physical positions at least in part in response to electrical stimulation via the reference line and release line. Information state of the cell is non-volatilely stored via the respective physical position of the nanotube switching element. Under another embodiment, a circuit array includes a plurality of cells arranged in an organization of words, each word having a plurality of bits. Each cell is responsive to a bit line, word line, and reference line. Each word line and bit line are shared among a plurality of cells. Each cell is selectable via the activation of the bit line and word line. Each cell includes a field effect transistor and a nanotube switching element. Each nanotube switching element includes a nanotube article positioned between a set electrode and a release electrode. The set electrode may be electrically stimulated to electro-statically attract the nanotube article into contact with the set electrode and the release electrode may be electrically stimulated to electro-statically attract the nanotube article out of contact with the set electrode. Information state of the cell is non-volatilely stored via the respective physical position of the nanotube switching element. Cells are arranged as pairs with the nanotube switching elements of the pair being cross coupled so that the set electrode of one nanotube switching element is coupled to the release electrode of the other and the release electrode of the one nanotube switching element being coupled to the set electrode of the other. The nanotube articles are coupled to the reference line, and the source of one field effect transistor of a pair is coupled to the set electrode to one of the two nanotube switching elements and the source of the other field effect transistor of the pair is coupled to the release electrode to the one of the two nanotube switching elements.