公开(公告)号：US10541338B2

公开(公告)日：2020-01-21

申请号：US16060549

申请日：2015-12-15

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Alexander Viktorovich Bolotnikov ,  Peter Almern Losee ,  David Alan Lilienfeld ,  James Jay McMahon

IPC: H01L29/872 ,  H01L29/66 ,  H01L29/36 ,  H01L29/16 ,  H01L29/06 ,  H01L29/167

Abstract: The subject matter disclosed herein relates to silicon carbide (SiC) power devices and, more specifically, to SiC super-junction (SJ) power devices. A SiC-SJ device includes a plurality of SiC semiconductor layers of a first conductivity-type, wherein a first and a second SiC semiconductor layer of the plurality of SiC semiconductor layers comprise a termination region disposed adjacent to an active region with an interface formed therebetween, an act wherein the termination region of the first and the second SiC semiconductor layers comprises a plurality of implanted regions of a second conductivity-type, and wherein an effective doping profile of the termination region of the first SiC semiconductor layer is different from an effective doping profile of the termination region of the second SiC semiconductor layer.

公开(公告)号：US10403711B2

公开(公告)日：2019-09-03

申请号：US15295779

申请日：2016-10-17

Applicant: General Electric Company

Inventor： Alexander Viktorovich Bolotnikov ,  Ljubisa Dragoljub Stevanovic ,  Peter Almern Losee

IPC: H01L29/06 ,  H01L29/861 ,  H01L29/732 ,  H01L29/808 ,  H01L29/78 ,  H01L29/745 ,  H01L29/739 ,  H01L29/66 ,  G06F17/50 ,  H01L29/16 ,  H01L23/556 ,  H01L23/552 ,  H01L29/872 ,  H01L29/868

Abstract: In one embodiment, a method of manufacturing a silicon-carbide (SiC) device includes receiving a selection of a specific terrestrial cosmic ray (TCR) rating at a specific applied voltage, determining a breakdown voltage for the SiC device based at least on the specific TCR rating at the specific applied voltage, determining drift layer design parameters based at least on the breakdown voltage. The drift layer design parameters include doping concentration and thickness of the drift layer. The method also includes fabricating the SiC device having a drift layer with the determined drift layer design parameters. The SiC device has the specific TCR rating at the specific applied voltage.

公开(公告)号：US10269951B2

公开(公告)日：2019-04-23

申请号：US15596977

申请日：2017-05-16

Applicant: General Electric Company

Inventor： Peter Almern Losee ,  Alexander Bolotnikov ,  Stacey Joy Kennerly ,  James William Kretchmer

IPC: H01L29/06 ,  H01L29/36 ,  H01L29/16 ,  H01L29/20 ,  H01L21/265 ,  H01L21/266 ,  H01L29/78 ,  H01L29/10 ,  H01L29/08

Abstract: A semiconductor device is provided. The semiconductor device includes a semiconductor device layer having silicon carbide and having an upper surface and a lower surface. The semiconductor device also includes a heavily doped body region formed in the upper surface of the semiconductor device layer. The semiconductor device further includes a gate stack formed adjacent to and on top of the upper surface of the semiconductor device layer, wherein the gate stack is not formed adjacent to the heavily doped body region.

公开(公告)号：US10192958B2

公开(公告)日：2019-01-29

申请号：US14313785

申请日：2014-06-24

Applicant: General Electric Company

Inventor： Alexander Viktorovich Bolotnikov ,  Peter Almern Losee

IPC: H01L29/76 ,  H01L29/10 ,  H01L29/08 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L29/739 ,  H01L29/06

Abstract: A method of fabricating a semiconductor device cell at a surface of a silicon carbide (SiC) semiconductor layer includes forming a segmented source and body contact (SSBC) of the semiconductor device cell over the surface of the SiC semiconductor layer. The SSBC includes a body contact portion disposed over the surface of the semiconductor layer and proximate to a body contact region of the semiconductor device cell, wherein the body contact portion is substantially disposed over the center of the semiconductor device cell. The SSBC also includes at least one source contact portion disposed over the surface of the semiconductor layer and proximate to a source contact region of the semiconductor device cell, wherein the at least one source contact portion only partially surrounds the body contact portion of the SSBC.

公开(公告)号：US20180337273A1

公开(公告)日：2018-11-22

申请号：US15596977

申请日：2017-05-16

Applicant: General Electric Company

Inventor： Peter Almern Losee ,  Alexander Bolotnikov ,  Stacey Joy Kennerly ,  James William Kretchmer

IPC: H01L29/78 ,  H01L29/10

CPC classification number: H01L29/7811 ,  H01L29/0865 ,  H01L29/1083 ,  H01L29/1095

Abstract: A semiconductor device is provided. The semiconductor device includes a semiconductor device layer having silicon carbide and having an upper surface and a lower surface. The semiconductor device also includes a heavily doped body region formed in the upper surface of the semiconductor device layer. The semiconductor device further includes a gate stack formed adjacent to and on top of the upper surface of the semiconductor device layer, wherein the gate stack is not formed adjacent to the heavily doped body region.

公开(公告)号：US09899512B2

公开(公告)日：2018-02-20

申请号：US15052664

申请日：2016-02-24

Applicant: General Electric Company

Inventor： Peter Almern Losee ,  Ljubisa Dragoljub Stevanovic ,  Gregory Thomas Dunne ,  Alexander Viktorovich Bolotnikov

IPC: H01L29/15 ,  H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L29/417 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/7816 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41758 ,  H01L29/66068 ,  H01L29/66681 ,  H01L29/7395 ,  H01L29/745 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/8083

Abstract: Embodiments of a silicon carbide (SiC) device are provided herein. In some embodiments, a silicon carbide (SiC) device may include a gate electrode disposed above a SiC semiconductor layer, wherein the SiC semiconductor layer comprises: a drift region having a first conductivity type; a well region disposed adjacent to the drift region, wherein the well region has a second conductivity type; and a source region having the first conductivity type disposed adjacent to the well region, wherein the source region comprises a source contact region and a pinch region, wherein the pinch region is disposed only partially below the gate electrode, wherein a sheet doping density in the pinch region is less than 2.5×1014 cm−2, and wherein the pinch region is configured to deplete at a current density greater than a nominal current density of the SiC device to increase the resistance of the source region.

公开(公告)号：US20170243935A1

公开(公告)日：2017-08-24

申请号：US15295779

申请日：2016-10-17

Applicant: General Electric Company

Inventor： Alexander Viktorovich Bolotnikov ,  Ljubisa Dragoljub Stevanovic ,  Peter Almern Losee

IPC: H01L29/06 ,  G06F17/50 ,  H01L23/556 ,  H01L29/16 ,  H01L23/552

CPC classification number: H01L29/06 ,  G06F17/5036 ,  G06F17/5068 ,  G06F2217/06 ,  H01L23/552 ,  H01L23/556 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/732 ,  H01L29/7395 ,  H01L29/745 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/8611 ,  H01L29/868 ,  H01L29/872

Abstract: In one embodiment, a method of manufacturing a silicon-carbide (SiC) device includes receiving a selection of a specific terrestrial cosmic ray (TCR) rating at a specific applied voltage, determining a breakdown voltage for the SiC device based at least on the specific TCR rating at the specific applied voltage, determining drift layer design parameters based at least on the breakdown voltage. The drift layer design parameters include doping concentration and thickness of the drift layer. The method also includes fabricating the SiC device having a drift layer with the determined drift layer design parameters. The SiC device has the specific TCR rating at the specific applied voltage.

公开(公告)号：US09716144B2

公开(公告)日：2017-07-25

申请号：US14577451

申请日：2014-12-19

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Alexander Viktorovich Bolotnikov ,  Peter Almern Losee

IPC: H01L29/10 ,  H01L21/31 ,  H01L29/06 ,  H01L29/66 ,  H01L29/73 ,  H01L21/26 ,  H01L29/08 ,  H01L29/78 ,  H01L29/739

CPC classification number: H01L29/1037 ,  H01L29/0607 ,  H01L29/0692 ,  H01L29/0865 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802

Abstract: A semiconductor device may include a drift region having a first conductivity type, a source region having the first conductivity type, and a well region having a second conductivity type disposed adjacent to the drift region and adjacent to the source region. The well region may include a channel region that has the second conductivity type disposed adjacent to the source region and proximal to a surface of the semiconductor device cell. The channel region may include a non-uniform edge that includes at least one protrusion.

公开(公告)号：US09704949B1

公开(公告)日：2017-07-11

申请号：US15199262

申请日：2016-06-30

Applicant: General Electric Company

Inventor： Reza Ghandi ,  Peter Almern Losee ,  Alexander Viktorovich Bolotnikov ,  David Alan Lilienfeld

IPC: H01L29/16 ,  H01L29/06 ,  H01L29/872 ,  H01L21/04 ,  H01L29/66

CPC classification number: H01L29/0634 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/872

Abstract: A charge-balanced (CB) diode may include one or more CB layers. Each CB layer may include an epitaxial layer having a first conductivity type and a plurality of buried regions having a second conductivity type. Additionally, the CB diode may include an upper epitaxial layer having the first conductivity type that is disposed adjacent to an uppermost CB layer of the one or more CB layers. The upper epitaxial layer may also include a plurality of junction barrier (JBS) implanted regions having the second conductivity type. Further, the CB diode may include a Schottky contact disposed adjacent to the upper epitaxial layer and the plurality of JBS implanted regions.

公开(公告)号：US20160307997A1

公开(公告)日：2016-10-20

申请号：US15194774

申请日：2016-06-28

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Stephen Daley Arthur ,  Alexander Viktorovich Bolotnikov ,  Peter Almern Losee ,  Kevin Sean Motocha ,  Richard Joseph Saia ,  Zachary Matthew Stum ,  Ljuibisa Dragolijub Stevanovic ,  Kuna Venkat Satya Rama Kishore ,  James William Kretchmer

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/861 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78 ,  H01L29/36 ,  H01L21/04

CPC classification number: H01L29/0638 ,  H01L21/0465 ,  H01L29/0619 ,  H01L29/0646 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/6606 ,  H01L29/7395 ,  H01L29/7811 ,  H01L29/8611 ,  H01L29/8613

Abstract: A semiconductor device may include a substrate comprising silicon carbide; a drift layer disposed over the substrate doped with a first dopant type; an anode region disposed adjacent to the drift layer, wherein the anode region is doped with a second dopant type; and a junction termination extension disposed adjacent to the anode region and extending around the anode region, wherein the junction termination extension has a width and comprises a plurality of discrete regions separated in a first direction and in a second direction and doped with varying concentrations with the second dopant type, so as to have an effective doping profile of the second conductivity type of a functional form that generally decreases along a direction away from an edge of the primary blocking junction.

Abstract translation: 半导体器件可以包括包含碳化硅的衬底; 设置在掺杂有第一掺杂剂类型的衬底上的漂移层; 邻近所述漂移层设置的阳极区域，其中所述阳极区域掺杂有第二掺杂剂类型; 以及连接终端延伸部，其邻近所述阳极区域设置并且围绕所述阳极区域延伸，其中所述连接终端延伸部具有宽度并且包括在第一方向和第二方向上分离的多个离散区域，并且以 第二掺杂剂类型，以便具有通常沿着远离主阻塞结的边缘的方向减小的功能形式的第二导电类型的有效掺杂分布。