Abstract:
Surface modification layers and associated heat treatments, that may be provided on a sheet, a carrier, or both, to control both room-temperature van der Waals (and/or hydrogen) bonding and high temperature covalent bonding between the thin sheet and carrier. The room-temperature bonding is controlled so as to be sufficient to hold the thin sheet and carrier together during vacuum processing, wet processing, and/or ultrasonic cleaning processing, for example. And at the same time, the high temperature covalent bonding is controlled so as to prevent a permanent bond between the thin sheet and carrier during high temperature processing, as well as maintain a sufficient bond to prevent delamination during high temperature processing.
Abstract:
Described herein are improved dewetting methods and improved patterned articles produced using such methods. The improved methods and articles generally implement continuous ultra-thin metal-containing films or film stacks as the materials to be dewetted. For example, a method can involve the steps of providing a substrate that has a continuous ultra-thin metal-containing film or film stack disposed on a surface thereof, and dewetting at least a portion of the continuous ultra-thin metal-containing film or film stack to produce a plurality of discrete metal-containing dewetted islands on the surface of the substrate.
Abstract:
An air filter article, including: a wall-flow honeycomb particulate filter; and at least one anti-microbial agent on at least a portion of the interior surfaces. The disclosure also provides a filtration system that incorporates or uses the air filter article, and methods for making the air filter article.
Abstract:
A method of forming an article from a glass sheet (20) having a glass-sheet bonding surface (24) and a glass carrier (10) having a carrier bonding surface (14). At least one of the glass sheet and carrier bonding surfaces is coated with a surface modification layer (30), and then the glass sheet is connected with the carrier via the surface modification layer. From the perimeter of the glass sheet and the carrier while connected, there is removed a portion of the surface modification layer so as to expose a portion (19, 29) of the bonding surface on each of the glass sheet and the carrier. The glass sheet and carrier are then heated at a temperature ≧400° C. so as to bond the perimeter of the glass sheet (26) with the perimeter of the carrier (16).
Abstract:
Methods for making electronic devices on thin sheets bonded to carriers. A surface modification layer and associated heat treatments, may be provided on a sheet, a carrier, or both, to control both room-temperature van der Waals (and/or hydrogen) bonding and high temperature covalent bonding between the thin sheet and carrier during the electronic device processing. The room-temperature bonding is controlled so as to be sufficient to hold the thin sheet and carrier together during vacuum processing, wet processing, and/or ultrasonic cleaning processing, during the electronic device processing. And at the same time, the high temperature covalent bonding is controlled so as to prevent a permanent bond between the thin sheet and carrier during high temperature processing, during the electronic device processing, as well as maintain a sufficient bond to prevent delamination during high temperature processing.
Abstract:
Surface modification layers and associated heat treatments, that may be provided on a sheet, a carrier, or both, to control both room-temperature van der Waals (and/or hydrogen) bonding and high temperature covalent bonding between the thin sheet and carrier. The room-temperature bonding is controlled so as to be sufficient to hold the thin sheet and carrier together during vacuum processing, wet processing, and/or ultrasonic cleaning processing, for example. And at the same time, the high temperature covalent bonding is controlled so as to prevent a permanent bond between the thin sheet and carrier during high temperature processing, as well as maintain a sufficient bond to prevent delamination during high temperature processing.
Abstract:
A method of forming a sheet of semiconductor material utilizes a system. The system comprises a first convex member extending along a first axis and capable of rotating about the first axis and a second convex member spaced from the first convex member and extending along a second axis and capable of rotating about the second axis. The first and second convex members define a nip gap therebetween. The method comprises applying a melt of the semiconductor material on an external surface of at least one of the first and second convex members to form a deposit on the external surface of at least one of the first and second convex members. The method further comprises rotating the first and second convex members in a direction opposite one another to allow for the deposit to pass through the nip gap, thereby forming the sheet of semiconductor material.
Abstract:
Described herein are glass substrates having oleophobic surfaces that are substantially free of features that form a reentrant geometry. The surfaces can include a plurality of gas-trapping features, extending from the surface to a depth below the surface, that are substantially isolated from each other. The gas-trapping features are capable of trapping gas below any droplets that are contacted with the surface so as to prevent wetting of the surface by the droplets.
Abstract:
A method of forming a solid layer of a semiconducting material on an external surface of a treated mold which extends between a leading edge and a trailing edge comprises selectively modifying a temperature gradient of a mold such that a temperature of the leading edge (T1) is less than a temperature of the trailing edge (T2) to form the treated mold. The method further comprises submersing the treated mold into a molten semiconducting material such that the leading edge of the treated mold is first submersed into the molten semiconducting material. The method also comprises withdrawing the treated mold from the molten semiconducting material to form the solid layer of the semiconducting material on the external surface of the treated mold.
Abstract:
According to various embodiments described herein, an article comprises a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and a via extending through the substrate from the first major surface to the second major surface over an axial length in an axial direction. The article further comprises a helium hermetic adhesion layer disposed on the interior surface; and a metal connector disposed within the via, wherein the metal connector is adhered to the helium hermetic adhesion layer. The metal connector coats the interior surface of the via along the axial length of the via to define a first cavity from the first major surface to a first cavity length, the metal connector comprising a coating thickness of less than 12 μm at the first major surface. Additionally, the metal connector coats the interior surface of the via along the axial length of the via to define a second cavity from the second major surface to a second cavity length, the metal connector comprising a coating thickness of less than 12 μm at the second major surface and fully fills the via between the first cavity and the second cavity.