公开(公告)号：US4930477A

公开(公告)日：1990-06-05

申请号：US258685

申请日：1988-10-17

申请人： Yasutoshi Nanyoshi ,  Toshio Matsumura ,  Tatsuo Morita ,  Hidetoshi Shigyo

发明人： Yasutoshi Nanyoshi ,  Toshio Matsumura ,  Tatsuo Morita ,  Hidetoshi Shigyo

IPC分类号： F02P5/15

CPC分类号： F02P5/1504 ,  Y02T10/46

摘要： A system and method for controlling an ignition timing for an internal combustion engine mounted in a vehicle are disclosed in which a limit value for the ignition timing value is provided so that a difference between a current ignition timing and a previous ignition timing is within the limit value and the limit value is set according to a magnitude of an engine acceleration. For example, when an abrupt engine acceleration occurs, the limit value is set to 15 degrees. When the engine is in a steady state (no abrupt acceleration from an idling condition), the limit value is set to four degrees. Therefore, no vehicle body shock occurs due to the abrupt change in an engine output torque caused by the abrupt change in the ignition timing and a response characteristic of a rise in the engine output torque during the abrupt acceleration can be assured.

摘要翻译： 公开了一种用于控制安装在车辆中的内燃机的点火正时的系统和方法，其中提供了点火正时值的极限值，使得当前点火正时与先前点火正时之间的差值在极限内 值，并且根据发动机加速度的大小设定极限值。 例如，当发生急剧的发动机加速时，将极限值设定为15度。 当发动机处于稳定状态（没有从怠速状态突然加速）时，极限值设定为4度。 因此，由于点火正时突然变化引起的发动机输出转矩突然变化，并且可以确保突发加速期间的发动机输出转矩的上升的响应特性，所以不会发生车身冲击。

公开(公告)号：US4654229A

公开(公告)日：1987-03-31

申请号：US822742

申请日：1986-01-27

申请人： Tatsuo Morita ,  Yoshiharu Nakajima ,  Shigeo Nakajima

发明人： Tatsuo Morita ,  Yoshiharu Nakajima ,  Shigeo Nakajima

IPC分类号： C23C14/24 ,  B01J19/00 ,  B22F9/12 ,  C23C14/22 ,  B05D1/12

CPC分类号： C23C14/22

摘要： A method for the production of substrates with a uniform dispersion of extremely fine granules comprising: forming extremely fine granules in a granule-formation chamber under a reduced pressure by a gas-evaporation technique, introducing said extremely fine granules into a granule-recovering chamber under high vacuum, which is adjacent to said granule-formation chamber, through a slit formed in the partition between said granule-formation chamber and said granule-recovering chamber, and allowing said extremely fine granules to be dispersed on and attached to a supporter disposed in said granule-recovering chamber.

摘要翻译： 一种用于制备具有均匀分散的极细颗粒的基材的方法，包括：通过气体蒸发技术在减压下在颗粒形成室中形成极细颗粒，将所述极细颗粒引入到颗粒回收室内 与所述颗粒形成室相邻的高真空通过形成在所述颗粒形成室和所述颗粒回收室之间的隔板中的狭缝，并且使所述极细颗粒分散并附着在设置在所述颗粒形成室中的支撑体上 所说的颗粒回收室。

公开(公告)号：US4543934A

公开(公告)日：1985-10-01

申请号：US562089

申请日：1983-12-16

申请人： Tatsuo Morita ,  Kunifumi Sawamoto

发明人： Tatsuo Morita ,  Kunifumi Sawamoto

IPC分类号： F02D41/14 ,  F02M51/00

CPC分类号： F02D41/1406 ,  F02D41/1498 ,  F02D2200/1015

摘要： An air/fuel ratio control system is applicable to lean mixture combustion internal combustion engines. The control system determines the value of the mixture ratio at which engine stability can switch between stable and unstable conditions. As long as the engine continues to run in a stable condition in which the engine roughness is within an acceptable range, the mixture is intermittently leaned out by a given proportion. On the other hand, when engine roughness in an unacceptable range is detected, the mixture ratio is enriched by a given proportion to overcome the unacceptable engine roughness. Enrichment of the mixture is continued until engine roughness within the acceptable range is detected.

摘要翻译： 空燃比控制系统适用于稀混合燃烧内燃机。 控制系统确定发动机稳定性在稳定和不稳定状态之间切换的混合比的值。 只要发动机在发动机粗糙度在可接受范围内的稳定状态下继续运转，则混合物间歇地倾斜一定比例。 另一方面，当检测到不可接受的范围内的发动机粗糙度时，以给定的比例浓缩混合比，以克服不可接受的发动机粗糙度。 继续浓缩混合物，直到检测到发动机粗糙度在可接受的范围内。

公开(公告)号：US4450814A

公开(公告)日：1984-05-29

申请号：US357646

申请日：1982-03-12

申请人： Kunifumi Sawamoto ,  Tatsuo Morita ,  Kenji Ikeura ,  Hiroshi Yamaguchi

发明人： Kunifumi Sawamoto ,  Tatsuo Morita ,  Kenji Ikeura ,  Hiroshi Yamaguchi

IPC分类号： F02D41/10 ,  F02B37/00 ,  F02B37/16 ,  F02D21/08 ,  F02D41/00 ,  F02D41/14 ,  F02D5/02 ,  F02B3/00

CPC分类号： F02B37/16 ,  F02D41/0007 ,  F02D41/1498 ,  F02D2200/1015 ,  Y02T10/144

摘要： Normally, an air-fuel ratio is controlled in accordance with the engine speed and the intake air quantity of an internal combustion engine with a turbocharger. When the output pressure of the turbocharger increases excessively, an intake relief valve opens to decrease the intake air quantity. In this case, the fuel injection quantity is controlled solely in accordance with the engine speed.

摘要翻译： 通常，根据具有涡轮增压器的内燃机的发动机转速和进气量控制空燃比。 当涡轮增压器的输出压力过大时，进气安全阀打开以减小进气量。 在这种情况下，仅根据发动机转速控制燃料喷射量。

公开(公告)号：US08604512B2

公开(公告)日：2013-12-10

申请号：US13463631

申请日：2012-05-03

申请人： Tatsuo Morita

发明人： Tatsuo Morita

IPC分类号： H01L29/66

CPC分类号： H01L29/42316 ,  H01L27/0605 ,  H01L27/0705 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/7786 ,  H01L2224/0603 ,  H01L2224/48247

摘要： A bidirectional switch includes a semiconductor element and a substrate potential stabilizer. The semiconductor element includes a first ohmic electrode and a second ohmic electrode, and a first gate electrode and a second gate electrode, which are sequentially formed on the first ohmic electrode between the first ohmic electrode and the second ohmic electrode. The substrate potential stabilizer sets a potential of the substrate lower than higher one of a potential of the first ohmic electrode or a potential of the second ohmic electrode.

摘要翻译： 双向开关包括半导体元件和衬底势垒稳定器。 半导体元件包括在第一欧姆电极和第二欧姆电极之间的第一欧姆电极上依次形成的第一欧姆电极和第二欧姆电极以及第一栅电极和第二栅电极。 衬底势垒稳定器使衬底的电位低于第一欧姆电极的电位或第二欧姆电极的电位的高电位。

公开(公告)号：US08497581B2

公开(公告)日：2013-07-30

申请号：US13220054

申请日：2011-08-29

申请人： Ayanori Ikoshi ,  Yasuhiro Uemoto ,  Manabu Yanagihara ,  Tatsuo Morita

发明人： Ayanori Ikoshi ,  Yasuhiro Uemoto ,  Manabu Yanagihara ,  Tatsuo Morita

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/495 ,  H01L23/34

CPC分类号： H01L24/11 ,  H01L23/295 ,  H01L23/3192 ,  H01L23/36 ,  H01L23/3677 ,  H01L23/4824 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1146 ,  H01L2224/1191 ,  H01L2224/13021 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29076 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor chip; a protective film and an insulating film sequentially stacked over the semiconductor chip, and each having openings that expose source, drain, and gate pads; a heat dissipation terminal made of a material having a higher thermal conductivity than the insulating film; connection terminals formed on the source, drain, and gate pads and surrounded by the insulating film; and a mount substrate having connection pads. The semiconductor chip has a source electrode having a plurality of source fingers, a drain electrode having a plurality of drain fingers, and a gate electrode having a plurality of gate fingers. The source, drain, and gate pads are connected to the source electrode, the drain electrode, and the gate electrode, respectively. The connection terminals are respectively connected to the connection pads. The heat dissipation terminal is in close contact with the mount substrate.

摘要翻译： 半导体器件包括：半导体芯片; 依次堆叠在半导体芯片上的保护膜和绝缘膜，并且每个具有暴露源极，漏极和栅极焊盘的开口; 由具有比绝缘膜高的导热性的材料制成的散热端子; 形成在源极，漏极和栅极焊盘上并被绝缘膜包围的连接端子; 以及具有连接焊盘的安装基板。 半导体芯片具有具有多个源极指的源极，具有多个漏极指的漏电极和具有多个栅极指的栅电极。 源极，漏极和栅极焊盘分别连接到源电极，漏极电极和栅电极。 连接端子分别连接到连接焊盘。 散热端与安装基板紧密接触。

公开(公告)号：US20130009676A1

公开(公告)日：2013-01-10

申请号：US13613724

申请日：2012-09-13

申请人： Tatsuo MORITA ,  Daisuke UEDA ,  Yasuhiro UEMOTO ,  Tetsuzo UEDA

发明人： Tatsuo MORITA ,  Daisuke UEDA ,  Yasuhiro UEMOTO ,  Tetsuzo UEDA

IPC分类号： H01L29/78 ,  H03K3/00

CPC分类号： H01L29/7787 ,  H01L27/0605 ,  H01L29/1066 ,  H01L29/2003

摘要： A bidirectional switching device includes a semiconductor multilayer structure made of a nitride semiconductor, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor multilayer structure, and a first gate electrode and a second gate electrode. The first gate electrode is covered with a first shield electrode having a potential substantially equal to that of the first ohmic electrode. The second gate electrode is covered with the second shield electrode having a potential substantially equal to that of the second ohmic electrode. An end of the first shield electrode is positioned between the first gate electrode and the second gate electrode, and an end of the second shield electrode is positioned between the second gate electrode and the first gate electrode.

摘要翻译： 双向开关器件包括由半导体多层结构上形成的由氮化物半导体，第一欧姆电极和第二欧姆电极构成的半导体多层结构以及第一栅电极和第二栅电极。 第一栅电极被第一屏蔽电极覆盖，该第一屏蔽电极的电位基本上等于第一欧姆电极的电位。 第二栅电极被第二屏蔽电极覆盖，其电位基本上等于第二欧姆电极的电位。 第一屏蔽电极的端部位于第一栅极电极和第二栅极电极之间，第二屏蔽电极的端部位于第二栅极电极和第一栅极电极之间。

公开(公告)号：US20120001200A1

公开(公告)日：2012-01-05

申请号：US13220054

申请日：2011-08-29

申请人： Ayanori Ikoshi ,  Yasuhiro Uemoto ,  Manabu Yanagihara ,  Tatsuo Morita

发明人： Ayanori Ikoshi ,  Yasuhiro Uemoto ,  Manabu Yanagihara ,  Tatsuo Morita

IPC分类号： H01L29/161 ,  H01L23/48

CPC分类号： H01L24/11 ,  H01L23/295 ,  H01L23/3192 ,  H01L23/36 ,  H01L23/3677 ,  H01L23/4824 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1146 ,  H01L2224/1191 ,  H01L2224/13021 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29076 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor chip; a protective film and an insulating film sequentially stacked over the semiconductor chip, and each having openings that expose source, drain, and gate pads; a heat dissipation terminal made of a material having a higher thermal conductivity than the insulating film; connection terminals formed on the source, drain, and gate pads and surrounded by the insulating film; and a mount substrate having connection pads. The semiconductor chip has a source electrode having a plurality of source fingers, a drain electrode having a plurality of drain fingers, and a gate electrode having a plurality of gate fingers. The source, drain, and gate pads are connected to the source electrode, the drain electrode, and the gate electrode, respectively. The connection terminals are respectively connected to the connection pads. The heat dissipation terminal is in close contact with the mount substrate.

摘要翻译： 半导体器件包括：半导体芯片; 依次堆叠在半导体芯片上的保护膜和绝缘膜，并且每个具有暴露源极，漏极和栅极焊盘的开口; 由具有比绝缘膜高的导热性的材料制成的散热端子; 形成在源极，漏极和栅极焊盘上并被绝缘膜包围的连接端子; 以及具有连接焊盘的安装基板。 半导体芯片具有具有多个源极指的源极，具有多个漏极指的漏电极和具有多个栅极指的栅电极。 源极，漏极和栅极焊盘分别连接到源电极，漏极电极和栅电极。 连接端子分别连接到连接焊盘。 散热端与安装基板紧密接触。

公开(公告)号：USD630667S1

公开(公告)日：2011-01-11

申请号：US29344516

申请日：2009-09-30

申请人： Shinro Inui ,  Tatsuo Morita

设计人： Shinro Inui ,  Tatsuo Morita

公开(公告)号：US20100321363A1

公开(公告)日：2010-12-23

申请号：US12518005

申请日：2008-06-19

申请人： Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Manabu Inoue

发明人： Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Manabu Inoue

IPC分类号： G09G3/28

CPC分类号： G09G3/294 ,  G09G3/2965

摘要： A plasma display panel driving device includes an electrode driving unit for generating a drive pulse to be applied to an electrode of a plasma display panel. The electrode driving unit has a plurality of switches. At least one of the plurality of switches is a switch device including a dual-gate semiconductor device. The dual-gate semiconductor device 10 has a semiconductor multilayer 13 formed on a substrate 11 and made of a nitride semiconductor or a silicon carbide semiconductor, a source electrode 16 and a drain electrode 17 formed and spaced apart from each other on the semiconductor multilayer 13, and a first gate electrode 18A and a second gate electrode 18B formed between the source electrode 16 and the drain electrode 17, successively from the source electrode 16 side.

摘要翻译： 等离子体显示面板驱动装置包括用于产生施加到等离子体显示面板的电极的驱动脉冲的电极驱动单元。 电极驱动单元具有多个开关。 多个开关中的至少一个是包括双栅极半导体器件的开关器件。 双栅极半导体器件10具有形成在基板11上并由氮化物半导体或碳化硅半导体形成的半导体层叠体13，在半导体层叠体13上形成并隔开的源电极16和漏电极17 以及从源极电极16侧依次形成在源极电极16和漏极电极17之间的第一栅极电极18A和第二栅极电极18B。