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公开(公告)号：US08497553B2
公开(公告)日：2013-07-30
申请号：US12905801
申请日：2010-10-15
CPC分类号： H01L29/7786 , H01L27/0266 , H01L27/0605 , H01L29/1066 , H01L29/2003 , H01L29/41758 , H01L29/42364 , H01L29/8124 , H01L29/861
摘要： A semiconductor device includes a first transistor formed on a first element region, and a first protecting element including a second transistor formed on a second element region. A second protecting element ohmic electrode is connected to a first gate electrode, a first protecting element ohmic electrode is connected to a first ohmic electrode, and a first protecting element gate electrode is connected to at least one of the first protecting element ohmic electrode and the second protecting element ohmic electrode. The second element region is smaller in area than the first element region.
摘要翻译： 半导体器件包括形成在第一元件区上的第一晶体管和包括形成在第二元件区上的第二晶体管的第一保护元件。 第二保护元件欧姆电极连接到第一栅电极，第一保护元件欧姆电极连接到第一欧姆电极，第一保护元件栅电极连接至第一保护元件欧姆电极和 第二保护元件欧姆电极。 第二元件区域的面积小于第一元件区域。
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2.发明申请BI-DIRECTIONAL SWITCH, ALTERNATING-CURRENT TWO-WIRE SWITCH, SWITCHING POWER SOURCE CIRCUIT, AND METHOD OF DRIVING BI-DIRECTIONAL SWITCH 有权双向开关，交替电流二线开关，开关电源电路以及驱动双向开关的方法公开(公告)号：US20110305054A1
公开(公告)日：2011-12-15
申请号：US13158934
申请日：2011-06-13
IPC分类号： H02M7/02 , H03K17/94 , H03K17/687
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/42316 , H03K17/6871 , H03K2017/6875 , H03K2217/0009
摘要： A semiconductor device 101 in a bi-directional switch includes: a first electrode 109A, a second electrode 109B, a first gate electrode 112A, and a second gate electrode 112B. In a transition period: when the potential of the first electrode 109A is higher than the potential of the second electrode 109B, a voltage lower than the first threshold voltage is applied to the first gate electrode 112A and a voltage higher than the second threshold value voltage is applied to the second gate electrode 112B; and otherwise, a voltage higher than the first threshold value voltage is applied to the first gate electrode, and a voltage lower than the second threshold value voltage is applied to the second gate electrode.
摘要翻译： 双向开关中的半导体器件101包括：第一电极109A，第二电极109B，第一栅电极112A和第二栅电极112B。 在过渡期间：当第一电极109A的电位高于第二电极109B的电位时，将低于第一阈值电压的电压施加到第一栅电极112A，并且施加高于第二阈值电压 施加到第二栅电极112B; 否则，将高于第一阈值电压的电压施加到第一栅电极，并且将低于第二阈值电压的电压施加到第二栅电极。
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公开(公告)号：US20110215746A1
公开(公告)日：2011-09-08
申请号：US13036207
申请日：2011-02-28
CPC分类号： H02P6/14 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/0603 , H01L2224/45014 , H01L2224/45124 , H01L2224/45147 , H01L2224/48247 , H01L2224/48472 , H01L2224/4903 , H01L2224/49112 , H01L2224/49171 , H01L2924/00014 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/30107 , H01L2924/3011 , H03K3/021 , H01L2924/00 , H01L2224/05599 , H01L2924/206
摘要： A semiconductor device according to the present invention is a semiconductor device which includes: a semiconductor element; a gate drive circuit; and a connection terminal unit, wherein the semiconductor element includes: a gate electrode pad; and first and second ohmic electrode pads, the connection terminal includes: a first ohmic electrode terminal connected to the first ohmic electrode pad; a second ohmic electrode terminal connected to the second ohmic electrode pad; a gate drive terminal connected to the first ohmic electrode pad; and a gate terminal connected to the gate electrode pad, an input terminal of the gate drive circuit is connected to the gate drive terminal, an output terminal of the gate drive circuit is connected to the gate terminal, and a potential of the first ohmic electrode pad corresponds to a reference potential of the gate drive circuit.
摘要翻译： 根据本发明的半导体器件是半导体器件，其包括：半导体元件; 门驱动电路; 以及连接端子单元，其中所述半导体元件包括：栅极电极焊盘; 以及第一和第二欧姆电极焊盘，所述连接端子包括：连接到所述第一欧姆电极焊盘的第一欧姆电极端子; 连接到第二欧姆电极焊盘的第二欧姆电极端子; 连接到所述第一欧姆电极焊盘的栅极驱动端子; 以及连接到栅极电极焊盘的栅极端子，栅极驱动电路的输入端子连接到栅极驱动端子，栅极驱动电路的输出端子连接到栅极端子，并且第一欧姆电极的电位 焊盘对应于栅极驱动电路的参考电位。
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公开(公告)号：US20110215379A1
公开(公告)日：2011-09-08
申请号：US13021118
申请日：2011-02-04
IPC分类号： H01L29/778
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/41758
摘要： A field effect transistor includes a semiconductor stack formed on a substrate, and having a first nitride semiconductor layer and a second nitride semiconductor layer. A source electrode and a drain electrode are formed on the semiconductor stack so as to be separated from each other. A gate electrode is formed between the source electrode and the drain electrode so as to be separated from the source electrode and the drain electrode. A hole injection portion is formed near the drain electrode. The hole injection portion has a p-type third nitride semiconductor layer, and a hole injection electrode formed on the third nitride semiconductor layer. The hole injection electrode and the drain electrode have substantially the same potential.
摘要翻译： 场效应晶体管包括形成在衬底上的半导体堆叠，并且具有第一氮化物半导体层和第二氮化物半导体层。 源电极和漏电极形成在半导体堆叠上以便彼此分离。 在源电极和漏电极之间形成栅电极，以与源电极和漏电极分离。 在漏电极附近形成空穴注入部。 空穴注入部分具有p型第三氮化物半导体层和形成在第三氮化物半导体层上的空穴注入电极。 空穴注入电极和漏电极具有大致相同的电位。
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公开(公告)号：US20110204807A1
公开(公告)日：2011-08-25
申请号：US13032297
申请日：2011-02-22
CPC分类号： H01L29/808 , H01L29/2003 , H01L29/42316 , H03K17/12 , H03K2217/0009
摘要： A two-wire AC switch suppressing heat from a bidirectional switch element inside the switch is provided. The two-wire AC switch 100a connected between an AC power supply 101 and a load 102 includes: a bidirectional switch element 103 which flows passing current bi-directionally, selects whether to flow or block the current, is connected in series with the AC power supply 101 and the load 102 to form a closed-loop circuit, and is made of a group-III nitride semiconductor; a full-wave rectifier 104 performing full-wave rectification on power supplied from the AC power supply 101; a power supply circuit 105 smoothing a voltage after the full-wave rectification to generate DC power; a first gate drive circuit 107 and a second gate drive circuit 108 each outputting a control signal to the bidirectional switch element 103; and a control circuit 106 controlling the first and second gate drive circuits 107 and 108.
摘要翻译： 提供一种抑制来自开关内的双向开关元件的热量的二线交流开关。 连接在交流电源101和负载102之间的二线交流开关100a包括：双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103， 电源101和负载102以形成闭环电路，并且由III族氮化物半导体制成; 全波整流器104对从AC电源101提供的电力进行全波整流; 电源电路105，对全波整流后的电压进行平滑化，生成直流电力; 每个向双向开关元件103输出控制信号的第一栅极驱动电路107和第二栅极驱动电路108; 以及控制电路106，其控制第一和第二栅极驱动电路107和108。
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6.发明授权公开(公告)号：US08526207B2
公开(公告)日：2013-09-03
申请号：US13158934
申请日：2011-06-13
IPC分类号： H02M7/02 , H03K17/94 , H03K17/687
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/42316 , H03K17/6871 , H03K2017/6875 , H03K2217/0009
摘要： A semiconductor device 101 in a bi-directional switch includes: a first electrode 109A, a second electrode 109B, a first gate electrode 112A, and a second gate electrode 112B. In a transition period: when the potential of the first electrode 109A is higher than the potential of the second electrode 109B, a voltage lower than the first threshold voltage is applied to the first gate electrode 112A and a voltage higher than the second threshold value voltage is applied to the second gate electrode 112B; and otherwise, a voltage higher than the first threshold value voltage is applied to the first gate electrode, and a voltage lower than the second threshold value voltage is applied to the second gate electrode.
摘要翻译： 双向开关中的半导体器件101包括：第一电极109A，第二电极109B，第一栅电极112A和第二栅电极112B。 在过渡期间：当第一电极109A的电位高于第二电极109B的电位时，将低于第一阈值电压的电压施加到第一栅电极112A，并且施加高于第二阈值电压 施加到第二栅电极112B; 否则，将高于第一阈值电压的电压施加到第一栅电极，并且将低于第二阈值电压的电压施加到第二栅电极。
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公开(公告)号：US08148752B2
公开(公告)日：2012-04-03
申请号：US13021118
申请日：2011-02-04
IPC分类号： H01L29/778
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/41758
摘要： A field effect transistor includes a semiconductor stack formed on a substrate, and having a first nitride semiconductor layer and a second nitride semiconductor layer. A source electrode and a drain electrode are formed on the semiconductor stack so as to be separated from each other. A gate electrode is formed between the source electrode and the drain electrode so as to be separated from the source electrode and the drain electrode. A hole injection portion is formed near the drain electrode. The hole injection portion has a p-type third nitride semiconductor layer, and a hole injection electrode formed on the third nitride semiconductor layer. The hole injection electrode and the drain electrode have substantially the same potential.
摘要翻译： 场效应晶体管包括形成在衬底上的半导体堆叠，并且具有第一氮化物半导体层和第二氮化物半导体层。 源电极和漏电极形成在半导体堆叠上以便彼此分离。 在源电极和漏电极之间形成栅电极，以与源电极和漏电极分离。 在漏电极附近形成空穴注入部。 空穴注入部分具有p型第三氮化物半导体层和形成在第三氮化物半导体层上的空穴注入电极。 空穴注入电极和漏电极具有大致相同的电位。
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公开(公告)号：US20110193171A1
公开(公告)日：2011-08-11
申请号：US12905801
申请日：2010-10-15
IPC分类号： H01L27/088
CPC分类号： H01L29/7786 , H01L27/0266 , H01L27/0605 , H01L29/1066 , H01L29/2003 , H01L29/41758 , H01L29/42364 , H01L29/8124 , H01L29/861
摘要： A semiconductor device includes a first transistor formed on a first element region, and a first protecting element including a second transistor formed on a second element region. A second protecting element ohmic electrode is connected to a first gate electrode, a first protecting element ohmic electrode is connected to a first ohmic electrode, and a first protecting element gate electrode is connected to at least one of the first protecting element ohmic electrode and the second protecting element ohmic electrode. The second element region is smaller in area than the first element region.
摘要翻译： 半导体器件包括形成在第一元件区上的第一晶体管和包括形成在第二元件区上的第二晶体管的第一保护元件。 第二保护元件欧姆电极连接到第一栅电极，第一保护元件欧姆电极连接到第一欧姆电极，第一保护元件栅电极连接至第一保护元件欧姆电极和 第二保护元件欧姆电极。 第二元件区域的面积小于第一元件区域。
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公开(公告)号：US08593068B2
公开(公告)日：2013-11-26
申请号：US13032297
申请日：2011-02-22
IPC分类号： H05B39/02
CPC分类号： H01L29/808 , H01L29/2003 , H01L29/42316 , H03K17/12 , H03K2217/0009
摘要： A two-wire AC switch suppressing heat from a bidirectional switch element inside the switch is provided. The two-wire AC switch 100a connected between an AC power supply 101 and a load 102 includes: a bidirectional switch element 103 which flows passing current bi-directionally, selects whether to flow or block the current, is connected in series with the AC power supply 101 and the load 102 to form a closed-loop circuit, and is made of a group-III nitride semiconductor; a full-wave rectifier 104 performing full-wave rectification on power supplied from the AC power supply 101; a power supply circuit 105 smoothing a voltage after the full-wave rectification to generate DC power; a first gate drive circuit 107 and a second gate drive circuit 108 each outputting a control signal to the bidirectional switch element 103; and a control circuit 106 controlling the first and second gate drive circuits 107 and 108.
摘要翻译： 提供一种抑制来自开关内的双向开关元件的热量的二线交流开关。 连接在交流电源101和负载102之间的二线交流开关100a包括：双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103，其双向开关元件103， 电源101和负载102以形成闭环电路，并且由III族氮化物半导体制成; 全波整流器104对从AC电源101提供的电力进行全波整流; 电源电路105，对全波整流后的电压进行平滑化，生成直流电力; 每个向双向开关元件103输出控制信号的第一栅极驱动电路107和第二栅极驱动电路108; 以及控制电路106，其控制第一和第二栅极驱动电路107和108。
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公开(公告)号：US08497581B2
公开(公告)日：2013-07-30
申请号：US13220054
申请日：2011-08-29
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/495 , H01L23/34
CPC分类号： H01L24/11 , H01L23/295 , H01L23/3192 , H01L23/36 , H01L23/3677 , H01L23/4824 , H01L24/16 , H01L24/81 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1146 , H01L2224/1191 , H01L2224/13021 , H01L2224/131 , H01L2224/13144 , H01L2224/16225 , H01L2224/16227 , H01L2224/29076 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/83191 , H01L2224/83192 , H01L2224/83801 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/00014 , H01L2924/01014 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor chip; a protective film and an insulating film sequentially stacked over the semiconductor chip, and each having openings that expose source, drain, and gate pads; a heat dissipation terminal made of a material having a higher thermal conductivity than the insulating film; connection terminals formed on the source, drain, and gate pads and surrounded by the insulating film; and a mount substrate having connection pads. The semiconductor chip has a source electrode having a plurality of source fingers, a drain electrode having a plurality of drain fingers, and a gate electrode having a plurality of gate fingers. The source, drain, and gate pads are connected to the source electrode, the drain electrode, and the gate electrode, respectively. The connection terminals are respectively connected to the connection pads. The heat dissipation terminal is in close contact with the mount substrate.
摘要翻译： 半导体器件包括：半导体芯片; 依次堆叠在半导体芯片上的保护膜和绝缘膜，并且每个具有暴露源极，漏极和栅极焊盘的开口; 由具有比绝缘膜高的导热性的材料制成的散热端子; 形成在源极，漏极和栅极焊盘上并被绝缘膜包围的连接端子; 以及具有连接焊盘的安装基板。 半导体芯片具有具有多个源极指的源极，具有多个漏极指的漏电极和具有多个栅极指的栅电极。 源极，漏极和栅极焊盘分别连接到源电极，漏极电极和栅电极。 连接端子分别连接到连接焊盘。 散热端与安装基板紧密接触。
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