发明申请
- 专利标题： BI-DIRECTIONAL SWITCH, ALTERNATING-CURRENT TWO-WIRE SWITCH, SWITCHING POWER SOURCE CIRCUIT, AND METHOD OF DRIVING BI-DIRECTIONAL SWITCH
- 专利标题（中）： 双向开关，交替电流二线开关，开关电源电路以及驱动双向开关的方法
-
申请号： US13158934申请日： 2011-06-13
-
公开(公告)号： US20110305054A1公开(公告)日： 2011-12-15
- 发明人: Hiroto YAMAGIWA , Shingo Hashizume , Manabu Yanagihara , Ayanori Ikoshi
- 申请人： Hiroto YAMAGIWA , Shingo Hashizume , Manabu Yanagihara , Ayanori Ikoshi
- 优先权： JP2010-136648 20100615
- 主分类号： H02M7/02
- IPC分类号： H02M7/02 ; H03K17/94 ; H03K17/687
摘要：
A semiconductor device 101 in a bi-directional switch includes: a first electrode 109A, a second electrode 109B, a first gate electrode 112A, and a second gate electrode 112B. In a transition period: when the potential of the first electrode 109A is higher than the potential of the second electrode 109B, a voltage lower than the first threshold voltage is applied to the first gate electrode 112A and a voltage higher than the second threshold value voltage is applied to the second gate electrode 112B; and otherwise, a voltage higher than the first threshold value voltage is applied to the first gate electrode, and a voltage lower than the second threshold value voltage is applied to the second gate electrode.
公开/授权文献
信息查询
