公开(公告)号：US08905650B2

公开(公告)日：2014-12-09

申请号：US13704161

申请日：2011-09-05

Applicant: Hidetoshi Ishida ,  Hiroyoshi Maesoba ,  Tetsuji Tanaka

Inventor： Hidetoshi Ishida ,  Hiroyoshi Maesoba ,  Tetsuji Tanaka

IPC: G02B6/36 ,  G02B6/44 ,  G02B6/38

CPC classification number: G02B6/443 ,  G02B6/3887 ,  G02B6/3889

Abstract: A fiber-optic cable with a fitting capable of increasing connection strength between a fiber-optic cable and an optical connector, which includes a fiber-optic cable including a sheath and a tensile member, an inner ring mounted on a circumference of the sheath from a position where the tensile member is drawn out of the sheath through a slit to a front end of the sheath, and a fitting mounted on the circumference and including a first portion mounted from the position where the tensile member is drawn out of the sheath to a position of the sheath on a side opposite to the ring side, and a second portion mounted while covering a circumference of the ring, wherein the first portion connects with the sheath, and the end portion of the tensile member is sandwiched by the ring and the second portion.

Abstract translation: 一种具有能够增加光纤电缆和光学连接器之间的连接强度的配件的光纤电缆，其包括包括护套和拉伸构件的光纤电缆，安装在护套的圆周上的内环 其中所述拉伸构件通过狭缝从所述鞘被拉出到所述护套的前端的位置，以及安装在所述圆周上的配件，并且包括从所述拉伸构件从所述护套拉出的位置安装的第一部分， 所述护套位于与所述环侧相反的一侧的位置，以及第二部分，其安装成覆盖所述环的周边，其中所述第一部分与所述护套连接，并且所述拉伸构件的端部被所述环夹持， 第二部分。

公开(公告)号：US08748941B2

公开(公告)日：2014-06-10

申请号：US13372065

申请日：2012-02-13

Applicant: Daisuke Shibata ,  Masahiro Hikita ,  Hidetoshi Ishida ,  Tetsuzo Ueda

Inventor： Daisuke Shibata ,  Masahiro Hikita ,  Hidetoshi Ishida ,  Tetsuzo Ueda

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/423 ,  H01L29/872 ,  H01L29/778 ,  H01L29/417 ,  H01L29/06

CPC classification number: H01L29/7786 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/7787 ,  H01L29/872

Abstract: A nitride semiconductor device includes a semiconductor multilayer formed on a substrate, a first ohmic electrode and a Schottky electrode spaced apart from each other on the semiconductor multilayer; and a passivation film covering a top of the semiconductor multilayer. The semiconductor multilayer 102 includes a first nitride semiconductor layer, a second nitride semiconductor layer, and a p-type third nitride semiconductor layer 124 sequentially formed on the substrate. The third nitride semiconductor layer contains p-type impurities, and is selectively formed between the first ohmic electrode and the Schottky electrode in contact with the Schottky electrode.

Abstract translation: 氮化物半导体器件包括形成在衬底上的半导体层，在半导体多层上彼此间隔开的第一欧姆电极和肖特基电极; 以及覆盖半导体多层的顶部的钝化膜。 半导体层叠体102包括顺序形成在基板上的第一氮化物半导体层，第二氮化物半导体层和p型第三氮化物半导体层124。 第三氮化物半导体层含有p型杂质，并且选择性地形成在与肖特基电极接触的第一欧姆电极和肖特基电极之间。

公开(公告)号：US08404513B2

公开(公告)日：2013-03-26

申请号：US13486843

申请日：2012-06-01

Applicant: Akio Matsushita ,  Akihiro Itoh ,  Tohru Nakagawa ,  Hidetoshi Ishida

Inventor： Akio Matsushita ,  Akihiro Itoh ,  Tohru Nakagawa ,  Hidetoshi Ishida

IPC: H01L21/00 ,  H01L29/15 ,  H01L31/0256 ,  H01L27/14 ,  H01L21/0203 ,  H01L31/06 ,  H01L31/00

CPC classification number: H01L31/0693 ,  H01L31/0543 ,  H01L31/0687 ,  Y02E10/52 ,  Y02E10/544

Abstract: A method for generating electric power including the steps of: (a) preparing a solar cell having a condensing lens and a solar cell element, wherein the solar cell element includes an n-type GaAs layer, a p-type GaAs layer, a quantum tunneling layer, an n-type InGaP layer, a p-type InGaP layer, a p-type window layer, an n-side electrode, and a p-side electrode, and satisfies the following equation (I): d2

Abstract translation: 一种发电方法，包括以下步骤：（a）制备具有聚光透镜和太阳能电池元件的太阳能电池，其中太阳能电池元件包括n型GaAs层，p型GaAs层，量子 隧道层，n型InGaP层，p型InGaP层，p型窗口层，n侧电极和p侧电极，满足下式（I）：d2

公开(公告)号：US20120247555A1

公开(公告)日：2012-10-04

申请号：US13469794

申请日：2012-05-11

Applicant: Akio MATSUSHITA ,  Akihiro ITOH ,  Tohru NAKAGAWA ,  Hidetoshi ISHIDA

Inventor： Akio MATSUSHITA ,  Akihiro ITOH ,  Tohru NAKAGAWA ,  Hidetoshi ISHIDA

IPC: H01L31/0304 ,  H01L31/0216

CPC classification number: H01L31/0693 ,  H01L31/035281 ,  H01L31/0543 ,  H01L31/184 ,  Y02E10/544

Abstract: The purpose of the present invention is to provide a solar cell with higher conversion efficiency.The method comprises steps of: (a) preparing the solar cell comprising a condensing lens (101) and a solar cell element (102), wherein the following inequation set (I) is satisfied: d2

Abstract translation: 本发明的目的是提供一种具有较高转换效率的太阳能电池。 该方法包括以下步骤：（a）制备包括聚光透镜（101）和太阳能电池元件（102）的太阳能电池，其中满足以下不等式组（I）：d2

公开(公告)号：US20120146093A1

公开(公告)日：2012-06-14

申请号：US13372065

申请日：2012-02-13

Applicant: Daisuke SHIBATA ,  Masahiro Hikita ,  Hidetoshi Ishida ,  Tetsuzo Ueda

Inventor： Daisuke SHIBATA ,  Masahiro Hikita ,  Hidetoshi Ishida ,  Tetsuzo Ueda

IPC: H01L29/78

CPC classification number: H01L29/7786 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/7787 ,  H01L29/872

Abstract: A nitride semiconductor device includes a semiconductor multilayer formed on a substrate, a first ohmic electrode and a Schottky electrode spaced apart from each other on the semiconductor multilayer; and a passivation film covering a top of the semiconductor multilayer. The semiconductor multilayer 102 includes a first nitride semiconductor layer, a second nitride semiconductor layer, and a p-type third nitride semiconductor layer 124 sequentially formed on the substrate. The third nitride semiconductor layer contains p-type impurities, and is selectively formed between the first ohmic electrode and the Schottky electrode in contact with the Schottky electrode.

Abstract translation: 氮化物半导体器件包括形成在衬底上的半导体层，在半导体多层上彼此间隔开的第一欧姆电极和肖特基电极; 以及覆盖半导体多层的顶部的钝化膜。 半导体层叠体102包括顺序形成在基板上的第一氮化物半导体层，第二氮化物半导体层和p型第三氮化物半导体层124。 第三氮化物半导体层含有p型杂质，并且选择性地形成在与肖特基电极接触的第一欧姆电极和肖特基电极之间。

公开(公告)号：US08089096B2

公开(公告)日：2012-01-03

申请号：US11470316

申请日：2006-09-06

Applicant: Hidetoshi Ishida ,  Masayuki Kuroda ,  Tetsuzo Ueda

Inventor： Hidetoshi Ishida ,  Masayuki Kuroda ,  Tetsuzo Ueda

IPC: H01L29/778 ,  H01L29/04

CPC classification number: H01L29/7787 ,  H01L29/2003

Abstract: A normally-off type field effect transistor includes: a first semiconductor layer which is made of a first hexagonal crystal with 6 mm symmetry and has a main surface including a C-axis of the first hexagonal crystal; a second semiconductor layer which is formed on the main surface of the first semiconductor layer and is made of a second hexagonal crystal with 6 mm symmetry having a band gap different from a band gap of the first hexagonal crystal; and a gate electrode, a source electrode and a drain electrode that are formed on the second semiconductor layer. Here, the film thickness of the first nitride semiconductor layer is 1.5 μm or less and the second semiconductor layer is doped with impurities at a dose of 1×1013 cm−2 or more.

Abstract translation: 常关型场效应晶体管包括：第一半导体层，其由具有6mm对称性的第一六边形晶体制成并且具有包括第一六边形晶体的C轴的主表面; 第二半导体层，其形成在所述第一半导体层的主表面上，并且由具有与所述第一六边形晶体的带隙不同的带隙的6mm对称的第二六边形晶体制成; 以及形成在第二半导体层上的栅电极，源电极和漏电极。 这里，第一氮化物半导体层的膜厚为1.5μm以下，第二半导体层以1×1013cm-2以上的剂量掺杂杂质。

公开(公告)号：US20100321363A1

公开(公告)日：2010-12-23

申请号：US12518005

申请日：2008-06-19

Applicant: Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Manabu Inoue

Inventor： Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Manabu Inoue

IPC: G09G3/28

CPC classification number: G09G3/294 ,  G09G3/2965

Abstract: A plasma display panel driving device includes an electrode driving unit for generating a drive pulse to be applied to an electrode of a plasma display panel. The electrode driving unit has a plurality of switches. At least one of the plurality of switches is a switch device including a dual-gate semiconductor device. The dual-gate semiconductor device 10 has a semiconductor multilayer 13 formed on a substrate 11 and made of a nitride semiconductor or a silicon carbide semiconductor, a source electrode 16 and a drain electrode 17 formed and spaced apart from each other on the semiconductor multilayer 13, and a first gate electrode 18A and a second gate electrode 18B formed between the source electrode 16 and the drain electrode 17, successively from the source electrode 16 side.

Abstract translation: 等离子体显示面板驱动装置包括用于产生施加到等离子体显示面板的电极的驱动脉冲的电极驱动单元。 电极驱动单元具有多个开关。 多个开关中的至少一个是包括双栅极半导体器件的开关器件。 双栅极半导体器件10具有形成在基板11上并由氮化物半导体或碳化硅半导体形成的半导体层叠体13，在半导体层叠体13上形成并隔开的源电极16和漏电极17 以及从源极电极16侧依次形成在源极电极16和漏极电极17之间的第一栅极电极18A和第二栅极电极18B。

公开(公告)号：US20100097105A1

公开(公告)日：2010-04-22

申请号：US12445390

申请日：2007-11-20

Applicant: Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Hiroaki Ueno ,  Tsuyoshi Tanaka ,  Daisuke Ueda

Inventor： Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Hiroaki Ueno ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC: H03B1/00 ,  H01L29/20 ,  H01L29/24 ,  H01L29/772 ,  H03K17/56

CPC classification number: H01L29/7787 ,  H01L27/0605 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/432 ,  H01L29/739 ,  H01L29/8124

Abstract: A semiconductor device includes a semiconductor layer stack 13 formed on a substrate 11 and having a channel region, a first electrode 16A and a second electrode 16B formed spaced apart from each other on the semiconductor layer stack 13, a first gate electrode 18A formed between the first electrode 16A and the second electrode 16B, and a second gate electrode 18B formed between the first gate electrode 18A and the second electrode 16B. A first control layer 19A having a p-type conductivity is formed between the semiconductor layer stack 13 and the first gate electrode 18A.

Abstract translation: 半导体器件包括形成在衬底11上并具有沟道区的半导体层堆叠13，在半导体层叠层13上彼此隔开形成的第一电极16A和第二电极16B，形成在第一栅电极18A之间的第一栅电极18A 第一电极16A和第二电极16B，以及形成在第一栅电极18A和第二电极16B之间的第二栅电极18B。 在半导体层堆叠13和第一栅电极18A之间形成具有p型导电性的第一控制层19A。

公开(公告)号：US07595680B2

公开(公告)日：2009-09-29

申请号：US12020163

申请日：2008-01-25

Applicant: Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Manabu Inoue

Inventor： Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Manabu Inoue

IPC: H03K17/687

CPC classification number: H03K17/687 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/7787 ,  H03K17/302 ,  H03K17/567 ,  H03K17/6877 ,  H03K17/74 ,  H03K17/78 ,  H03K17/795 ,  H03K2217/0036

Abstract: A bidirectional switch includes a field-effect transistor having a first ohmic electrode, a second ohmic electrode and a gate electrode, and a control circuit for controlling between a conduction state and a cut-off state by applying a bias voltage to the gate electrode. The control circuit applies the bias voltage from the first ohmic electrode as a reference when a potential of the second ohmic electrode is higher than the potential of the first ohmic electrode, and applies the bias voltage from the second ohmic electrode as a reference when the potential of the second electrode is lower than the potential of the first ohmic electrode.

Abstract translation: 双向开关包括具有第一欧姆电极，第二欧姆电极和栅电极的场效应晶体管，以及通过向栅电极施加偏压来控制导通状态和截止状态的控制电路。 当第二欧姆电极的电位高于第一欧姆电极的电位时，控制电路施加来自第一欧姆电极的偏置电压作为参考，并且当第二欧姆电极的电位为电位时施加来自第二欧姆电极的偏置电压作为参考 的第二电极的电位低于第一欧姆电极的电位。

公开(公告)号：US20070057290A1

公开(公告)日：2007-03-15

申请号：US11470316

申请日：2006-09-06

Applicant: Hidetoshi ISHIDA ,  Masayuki KURODA ,  Tetsuzo UEDA

Inventor： Hidetoshi ISHIDA ,  Masayuki KURODA ,  Tetsuzo UEDA

IPC: H01L29/76

CPC classification number: H01L29/7787 ,  H01L29/2003

Abstract: An object of the present invention is to provide a normally-off type field effect transistor which includes: a first semiconductor layer which is made of a first hexagonal crystal with 6 mm symmetry and has a main surface including a C-axis of the first hexagonal crystal; a second semiconductor layer which is formed on the main surface of the first semiconductor layer and is made of a second hexagonal crystal with 6 mm symmetry having a band gap different from a band gap of the first hexagonal crystal; and a gate electrode, a source electrode and drain electrode that are formed on the second semiconductor layer. Here, the film thickness of the first nitride semiconductor layer is 1.5 μm or less and the second semiconductor layer is doped with impurities at a dose of 1×1013 cm−2 or more.

Abstract translation: 本发明的目的是提供一种常关型场效应晶体管，其包括：第一半导体层，其由对称6mm的第一六边形晶体制成，并且具有包括第一六边形的C轴的主表面 水晶; 第二半导体层，其形成在所述第一半导体层的主表面上，并且由具有与所述第一六边形晶体的带隙不同的带隙的6mm对称的第二六边形晶体制成; 以及形成在第二半导体层上的栅电极，源电极和漏电极。 这里，第一氮化物半导体层的膜厚为1.5μm以下，第二半导体层以1×10 13 cm -2以上的剂量掺杂杂质 。