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140 条记录 (耗时 0.019 秒)

    Method for producing a laminated thin film capacitor
    51.
    发明授权
    Method for producing a laminated thin film capacitor 失效
    叠层薄膜电容器的制造方法

    公开(公告)号：US5663089A

    公开(公告)日：1997-09-02

    申请号：US465350

    申请日：1995-06-05

    申请人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Masumi Hattori ,  Satoru Fujii ,  Ryoichi Takayama

    发明人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Masumi Hattori ,  Satoru Fujii ,  Ryoichi Takayama

    IPC分类号： H01G4/30 ,  H01L21/70

    CPC分类号： H01G4/306

    摘要： A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.

    摘要翻译： 一种叠层薄膜电容器，其具有基板，至少两个电极层，至少一个电介质层和一对外部电极，所述至少一个电介质层和一对外部电极被放置在所述电容器的相应侧壁上，其中所述金属电极层和所述电介质层交替层叠在 基板和每个其他金属电极层暴露在电容器的每个侧壁上，该电容器具有优异的介电特性，例如每单位体积的高容量。

    Method of manufacturing semiconductor device having capacitor
    52.
    发明授权
    Method of manufacturing semiconductor device having capacitor 失效
    制造具有电容器的半导体器件的方法

    公开(公告)号：US5652171A

    公开(公告)日：1997-07-29

    申请号：US594945

    申请日：1996-01-31

    申请人： Yoshihisa Nagano ,  Eiji Fujii

    发明人： Yoshihisa Nagano ,  Eiji Fujii

    IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/105 ,  H01L27/108 ,  H01L21/70 ,  H01L27/00

    CPC分类号： H01L21/02071 ,  H01L21/32136 ,  H01L28/60 ,  H01L28/65

    摘要： A platinum bottom electrode film, a dielectric film composed of a high permittivity dielectric material or a ferroelectric material, and a platinum top electrode film are formed on a substrate on which circuit elements and wiring are formed, and the platinum top electrode film and the dielectric film are selectively dry-etched by using etching gas containing chlorine, then plasma generated by discharging gas containing fluorine is irradiated. By this method of manufacturing a semiconductor device including a capacitor, there is almost no residual chlorine, and hence erosion of the dielectric film by residual chlorine is prevented.

    摘要翻译： 在其上形成有电路元件和布线的基板上形成铂底部电极膜，由介电常数高的电介质材料或铁电体材料构成的电介质膜和铂电极膜，并且铂顶部电极膜和电介质 通过使用含有氯的蚀刻气体选择性地干蚀刻膜，然后照射通过排出含氟气体产生的等离子体。 通过这种制造包括电容器的半导体器件的方法，几乎​​没有残留的氯，因此防止了由残留氯引起的电介质膜的腐蚀。

    Display device using electro-optic plate and a membrane switch
    54.
    发明授权
    Display device using electro-optic plate and a membrane switch 失效
    显示装置采用电光板和薄膜开关

    公开(公告)号：US4733950A

    公开(公告)日：1988-03-29

    申请号：US939438

    申请日：1986-12-04

    申请人： Yoneharu Takubo ,  Yasutaka Horibe ,  Nobue Yamanishi ,  Eiji Fujii ,  Hideyuki Okinaka

    发明人： Yoneharu Takubo ,  Yasutaka Horibe ,  Nobue Yamanishi ,  Eiji Fujii ,  Hideyuki Okinaka

    IPC分类号： G02F1/055

    CPC分类号： G02F1/0555

    摘要： A display apparatus using a light-transmitting ceramic plate having an electrooptic effect known as Kerr effect is disclosed. The ceramic plate is placed between two parallel polarizers having a same axis of polarization. A transparent flexible sheet faces a surface of the ceramic plate. The flexible sheet has a plurality of transparent striped electrodes on a surface facing the surface of the ceramic plate. The striped electrodes are locally brought into contact with the surface of the ceramic plate by a pressure applied by a pressure application head which is either always or intermittently pressed onto the flexible sheet. The pressure application head is movable in a direction parallel to the striped electrodes for scanning.

    摘要翻译： 公开了一种使用具有称为克尔效应的电光效应的透光陶瓷板的显示装置。 将陶瓷板放置在具有相同的偏振轴的两个平行的偏振器之间。 透明柔性片面对陶瓷板的表面。 柔性片在与陶瓷板的表面相对的表面上具有多个透明条纹状电极。 条状电极通过施加在压力施加头上的压力局部地与陶瓷板的表面接触，压力施加头总是或间歇地压在柔性片上。 压力施加头可以在与条状电极平行的方向上移动以进行扫描。

    LIGHT-EMITTING DIODE
    58.
    发明申请
    LIGHT-EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20120104354A1

    公开(公告)日：2012-05-03

    申请号：US13283985

    申请日：2011-10-28

    申请人： Hiroyuki TANAKA ,  Nobuaki NAGAO ,  Takahiro HAMADA ,  Eiji FUJII

    发明人： Hiroyuki TANAKA ,  Nobuaki NAGAO ,  Takahiro HAMADA ,  Eiji FUJII

    IPC分类号： H01L33/04

    CPC分类号： H01L33/42 ,  H01L33/32

    摘要： A light-emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film, the n-type single-crystalline ITO transparent film is in contact with the n-type single-crystalline ZnO transparent film, and the p-side electrode is in connected with the n-type single-crystalline ZnO transparent film. The n-type single-crystalline ITO transparent film contains Ga, a molar ratio of Ga/(In+Ga) being not less than 0.08 and not more than 0.5. Thickness of the n-type single-crystalline ITO transparent film is not less than 1.1 nm and not more than 55 nm.

    摘要翻译： 发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极 订购。 窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触，n型单晶ITO透明膜与n型单晶ZnO透明膜接触，p型 侧电极与n型单晶ZnO透明膜连接。 n型单晶ITO透明膜含有Ga，Ga /（In + Ga）的摩尔比不小于0.08且不大于0.5。 n型单晶ITO透明膜的厚度不小于1.1nm且不大于55nm。

    PIEZOELECTRIC POWER GENERATING ELEMENT, AND METHOD OF GENERATING ELECTRIC POWER USING THE PIEZOELECTRIC POWER GENERATING ELEMENT
    60.
    发明申请
    PIEZOELECTRIC POWER GENERATING ELEMENT, AND METHOD OF GENERATING ELECTRIC POWER USING THE PIEZOELECTRIC POWER GENERATING ELEMENT 有权
    压电发电元件及使用压电发电元件生成电力的方法

    公开(公告)号：US20110278991A1

    公开(公告)日：2011-11-17

    申请号：US13191139

    申请日：2011-07-26

    申请人： Takakiyo HARIGAI ,  Michihito Ueda ,  Hideaki Adachi ,  Eiji Fujii

    发明人： Takakiyo HARIGAI ,  Michihito Ueda ,  Hideaki Adachi ,  Eiji Fujii

    IPC分类号： H02N2/18

    CPC分类号： H02N2/186 ,  H01L41/1134

    摘要： Provided is a relatively easy-to-fabricate piezoelectric power generating element capable of generating a large amount of electric power while comprising a bridge-type vibration beam that is resistant to damage from external vibration. This element comprises a support member, a strip-shaped vibration beam, a piezoelectric layer, and electrodes. The first and second ends of the vibration beam are fixed to the support member. The piezoelectric layer and the electrodes are provided on the surface of the vibration beam. The vibration beam extends in a plane when it is not vibrating. The vibration beam has a first portion that extends from the first end fixed to the support member, a second portion that extends from the second end fixed to the support member, and a third portion that connects the end of the first portion opposite to the first end and the end of the second portion opposite to the second end. The vibration beam has a shape such that, when viewed in a direction perpendicular to the plane, a first direction in which the first portion extends is a direction closer to the second end, and a second direction in which the second portion extends is a direction closer to the first end, the first and second directions each make an angle of more than 0° and less than 90° with respect to a straight line connecting the center of the first end and the center of the second end, and the third portion intersects once the straight line.

    摘要翻译： 提供一种相对容易制造的能够产生大量电力的压电发电元件，同时包括耐外部振动损坏的桥式振动梁。 该元件包括支撑构件，条形振动梁，压电层和电极。 振动梁的第一和第二端固定在支撑构件上。 压电层和电极设置在振动梁的表面上。 当振动梁不振动时，振动梁在平面内延伸。 振动梁具有从固定到支撑构件的第一端延伸的第一部分，从固定到支撑构件的第二端延伸的第二部分，以及连接第一部分的与第一部分相对的端部的第三部分 端部和第二部分的与第二端相对的端部。 所述振动梁具有这样的形状：当从垂直于所述平面的方向观察时，所述第一部分延伸的第一方向是更靠近所述第二端的方向，并且所述第二部分延伸的第二方向是方向 更靠近第一端，第一和第二方向相对于连接第一端的中心和第二端的中心的直线大于0°且小于90°，​​并且第三部分 相交一次直线。