公开(公告)号：US20080149857A1

公开(公告)日：2008-06-26

申请号：US11644623

申请日：2006-12-22

Applicant: Joseph Ferrara ,  Bo H. Vanderberg ,  Michael A. Graf

Inventor： Joseph Ferrara ,  Bo H. Vanderberg ,  Michael A. Graf

IPC: G21K5/10

CPC classification number: H01J37/3171 ,  H01J37/09 ,  H01J2237/022 ,  H01J2237/024 ,  H01J2237/0458 ,  H01J2237/057 ,  H01J2237/24528 ,  H01J2237/30455 ,  H01J2237/30483 ,  H01J2237/31705

Abstract: A workpiece or semiconductor wafer is tilted as a ribbon beam is swept up and/or down the workpiece. In so doing, the implant angle or the angle of the ion beam relative to the workpiece remains substantially constant across the wafer. This allows devices to be formed substantially consistently on the wafer. Resolving plates move with the beam as the beam is scanned up and/or down. This allows desired ions to impinge on the wafer, but blocks undesirable contaminants.

Abstract translation: 当工件或半导体晶片沿着工件扫过和/或向下时，工件或半导体晶片被倾斜。 在这样做时，植入角度或离子束相对于工件的角度在晶片上保持基本恒定。 这允许在晶片上基本上一致地形成器件。 当光束向上扫描和/或向下扫描时，解析板随着光束移动。 这允许所需的离子撞击在晶片上，但阻止不期望的污染物。

公开(公告)号：US20080149856A1

公开(公告)日：2008-06-26

申请号：US11615386

申请日：2006-12-22

Applicant: Russell J. LOW

Inventor： Russell J. LOW

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/09 ,  H01J2237/022 ,  H01J2237/024 ,  H01J2237/057 ,  H01J2237/31705 ,  H01J2237/31711

Abstract: Techniques for reducing contamination during ion implantation is disclosed. In one particular exemplary embodiment, the techniques may be realized by an apparatus for reducing contamination during ion implantation. The apparatus may comprise a platen to hold a workpiece for ion implantation by an ion beam. The apparatus may also comprise a mask, located in front of the platen, to block the ion beam and at least a portion of contamination ions from reaching a first portion of the workpiece during ion implantation of a second portion of the workpiece. The apparatus may further comprise a control mechanism, coupled to the platen, to reposition the workpiece to expose the first portion of the workpiece for ion implantation.

Abstract translation: 公开了用于减少离子注入期间污染的技术。 在一个特定的示例性实施例中，可以通过用于减少离子注入期间的污染的装置来实现这些技术。 该装置可以包括用于通过离子束保持用于离子注入的工件的压板。 该设备还可以包括位于压板前面的掩模，以在工件的第二部分的离子注入期间阻挡离子束并且至少一部分污染物离子到达工件的第一部分。 该装置还可以包括耦合到压板的控制机构，以重新定位工件以暴露工件的第一部分用于离子注入。

公开(公告)号：US07358508B2

公开(公告)日：2008-04-15

申请号：US11272529

申请日：2005-11-10

Applicant: Philip J. Ring ,  Michael Graf

Inventor： Philip J. Ring ,  Michael Graf

IPC: G21K5/00

CPC classification number: H01J37/3171 ,  H01J2237/028 ,  H01J2237/31705

Abstract: An ion implanter includes an ion source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. A liner has an interior facing surface that bounds at least a portion of the evacuated interior region and that comprises grooves spaced across the surface of the liner to capture contaminants generated within the interior region during operation of the ion implanter.

Abstract translation: 离子注入机包括用于产生沿着束线移动的离子束的离子源和真空或注入室，其中诸如硅晶片的工件被定位成与离子束相交以便通过所述工件的表面离子注入 离子束。 衬里具有内表面，其限定了所抽真空的内部区域的至少一部分，并且包括在衬垫的表面上间隔的凹槽，以在离子注入机的操作期间捕获在内部区域内产生的污染物。

公开(公告)号：US20070176114A1

公开(公告)日：2007-08-02

申请号：US11647801

申请日：2006-12-29

Applicant: Thomas Horsky ,  Brian Cohen ,  Wade Krull ,  George Sacco

Inventor： Thomas Horsky ,  Brian Cohen ,  Wade Krull ,  George Sacco

IPC: H01J27/00

CPC classification number: H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L29/6659

Abstract: An ion implantation is disclosed that includes an ionization chamber having a restricted outlet aperture and configured so that the gas or vapor in the ionization chamber is at a pressure substantially higher than the pressure within an extraction region into which the ions are to be extracted external to the ionization chamber. The vapor is ionized by direct electron impact ionization by an electron source that is in a region adjacent the outlet aperture of the ionization chamber to produce ions from the molecules of the gas or vapor to a density of at least 1010 cm−3 at the aperture while maintaining conditions that limit the transverse kinetic energy of the ions to less than about 0.7 eV. The beam is transported to a target surface and the ions of the transported ion beam are implanted into the target.

Abstract translation: 公开了一种离子注入，其包括具有限制的出口孔的电离室，并且被构造成使得离子化室中的气体或蒸汽的压力显着高于离子被提取外部的提取区域内的压力 电离室。 蒸汽通过电子源直接电离而电离，该电子源位于邻近离子化室的出口孔的区域中，以产生从气体或蒸汽的分子到至少10×10 6的密度的离子， SUP> cm -3，同时保持将离子的横向动能限制在小于约0.7eV的条件。 将光束输送到目标表面，并将输送的离子束的离子注入靶中。

公开(公告)号：US20070125955A1

公开(公告)日：2007-06-07

申请号：US11567485

申请日：2006-12-06

Applicant: Russell LOW ,  Jonathan England ,  Stephen Krause ,  Eric Hermanson

Inventor： Russell LOW ,  Jonathan England ,  Stephen Krause ,  Eric Hermanson

IPC: H01J3/14

CPC classification number: H01J37/3171 ,  H01J37/09 ,  H01J37/15 ,  H01J37/18 ,  H01J37/302 ,  H01J37/3023 ,  H01J2237/0455 ,  H01J2237/0458 ,  H01J2237/1503 ,  H01J2237/182 ,  H01J2237/188 ,  H01J2237/30488 ,  H01J2237/31705 ,  H01L21/266

Abstract: Techniques for preventing parasitic beamlets from affecting ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for preventing parasitic beamlets from affecting ion implantation. The apparatus may comprise a controller that is configured to scan a spot beam back and forth, thereby forming an ion beam spanning a predetermined width. The apparatus may also comprise an aperture mechanism that, if kept stationary, allows the spot beam to pass through. The apparatus may further comprise a synchronization mechanism, coupled to the controller and the aperture mechanism, that is configured to cause the aperture mechanism to move in synchronization with the scanned spot beam, allowing the scanned spot beam to pass through but blocking one or more parasitic beamlets associated with the spot beam.

Abstract translation: 公开了用于防止寄生子束影响离子注入的技术。 在一个特定的示例性实施例中，技术可以被实现为用于防止寄生子束影响离子注入的装置。 该装置可以包括配置成来回扫描点波束的控制器，从而形成横跨预定宽度的离子束。 该装置还可以包括孔机构，如果保持静止，则允许点束通过。 该装置还可以包括耦合到控制器和孔机构的同步机构，其被配置为使得孔径机构与扫描的点光束同步地移动，允许扫描的光束穿过但阻挡一个或多个寄生 与点光束相关的子束。

公开(公告)号：US07185602B2

公开(公告)日：2007-03-06

申请号：US10887426

申请日：2004-07-08

Applicant: Thomas Neil Horsky ,  John Noel Williams

Inventor： Thomas Neil Horsky ,  John Noel Williams

IPC: C23C16/00 ,  H01J27/00

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: An ion implantation device for vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system and delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source. The ion implantation device includes an ion source which can operate without an arc plasma, which can improve the emittance properties and the purity of the beam and without a strong applied magnetic field, which can improve the emittance properties of the beam. The ion source is configured so that it can be retrofit into the ion source design space of an existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs.

Abstract translation: 一种离子注入装置，用于通过新颖的蒸发器和蒸气输送系统蒸发十硼烷和其它热敏材料，并输送受控的低压蒸汽蒸汽流。 十硼烷，进入离子源。 离子注入装置包括能够在没有电弧等离子体的情况下工作的离子源，这可以提高光束的发射特性和纯度，并且不会产生强的施加磁场，这可以提高光束的发射特性。 离子源被配置为使得其可以改造成现有的基于伯纳斯源的离子注入器等的离子源设计空间，或以其它方式实现与其它离子源设计的兼容性。

公开(公告)号：US20070018114A1

公开(公告)日：2007-01-25

申请号：US11185141

申请日：2005-07-20

Applicant: Kenneth Purser ,  Albert Litherland ,  Norman Turner

Inventor： Kenneth Purser ,  Albert Litherland ,  Norman Turner

IPC: H01J27/00

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J49/145 ,  H01J2237/0815 ,  H01J2237/31705 ,  H05H3/02

Abstract: The present invention comprehends a compact and economical apparatus for producing high intensities of a wide variety of wanted positive and negative molecular and atomic ion beams that have been previously impossible to previously produce at useful intensities. In addition, the invention provides a substantial rejection of companion background ions that are frequently simultaneously emitted with the wanted ions. The principle underlying the present invention is resonance ionization-transfer where energy differences between resonant and non-resonant processes are exploited to enhance or attenuate particular charge-changing processes. This new source technique is relevant to the fields of Accelerator Mass Spectroscopy; Molecular Ion Implantation; Generation of Directed Neutral Beams; and Production of Electrons required for Ion Beam Neutralization within magnetic fields. An example having commercial importance is ionization of the decaborane molecule, B10H14 where an almost perfect ionization resonance match occurs between decaborane molecules and arsenic atoms.

Abstract translation: 本发明包括一种紧凑且经济的装置，用于产生以前不可能以有用强度预先产生的各种各样的所需正，负分子和原子离子束的强度。 此外，本发明提供了与所需离子频繁同时发射的伴随背景离子的显着排除。 本发明的基本原理是谐振电离转移，其中利用共振和非共振过程之间的能量差异来增强或减弱特定的电荷变化过程。 这种新的源技术与加速器质谱技术相关; 分子离子注入 定向中性梁的生成 和磁场中离子束中和所需的电子的生产。 具有商业重要性的实例是十硼烷分子的电离，其中在十硼烷分子和砷原子之间发生几乎完美的电离谐振匹配的B 10 H 14 N 14。

公开(公告)号：US07112804B2

公开(公告)日：2006-09-26

申请号：US10887425

申请日：2004-07-08

Applicant: Thomas Neil Horsky ,  John Noel Williams

Inventor： Thomas Neil Horsky ,  John Noel Williams

IPC: H01J27/00

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: An ion implantation device for vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system and delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source. The ion implantation device includes an ion source which can operate without an arc plasma, which can improve the emittance properties and the purity of the beam and without a strong applied magnetic field, which can improve the emittance properties of the beam. The ion source is configured so that it can be retrofit into the ion source design space of an existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs.

Abstract translation: 一种离子注入装置，用于通过新颖的蒸发器和蒸气输送系统蒸发十硼烷和其它热敏材料，并输送受控的低压蒸汽蒸汽流。 十硼烷，进入离子源。 离子注入装置包括能够在没有电弧等离子体的情况下工作的离子源，这可以提高光束的发射特性和纯度，并且不会产生强的施加磁场，这可以提高光束的发射特性。 离子源被配置为使得其可以改造成现有的基于伯纳斯源的离子注入器等的离子源设计空间，或以其它方式实现与其它离子源设计的兼容性。

公开(公告)号：US20060163494A1

公开(公告)日：2006-07-27

申请号：US11319207

申请日：2005-12-28

Applicant: Junichi Koezuka ,  Hiroto Shinoda

Inventor： Junichi Koezuka ,  Hiroto Shinoda

IPC: A61N5/00 ,  G21G5/00

CPC classification number: H01J37/08 ,  C23C8/36 ,  H01J37/3171 ,  H01J2237/31705 ,  H01L21/265 ,  H01L27/1214 ,  H01L27/127

Abstract: An object of the present invention is to provide an ion implantation method for shortening a down time of an ion implantation apparatus after exposure of a chamber and for improving throughput and a method for manufacturing a semiconductor device. Specifically, the object of the invention is to provide an ion implantation method that can improve throughput during an ion implantation step of B and a method for manufacturing a semiconductor device. The ion implantation method comprises the steps of: introducing an impurity imparting p-type conductivity and H2O in an ion source; ionizing the impurity imparting p-type conductivity; and implanting into a semiconductor film.

公开(公告)号：US07057191B2

公开(公告)日：2006-06-06

申请号：US10966595

申请日：2004-10-14

Applicant: Heng-Kai Hsu ,  Yu-Chi Chen

Inventor： Heng-Kai Hsu ,  Yu-Chi Chen

IPC: G21K5/10 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J2237/004 ,  H01J2237/18 ,  H01J2237/31703 ,  H01J2237/31705

Abstract: A method of controlling the implant dosage is provided. First, the residual gases within an ion implant station are analyzed and the partial pressure of each residual gas is measured. Thereafter, the current Im of the ion beam is measured and the real dosage Ir of the ion beam implanted into a wafer is calculated. Since all the residual gases in the ion implant station are considered, the implanting dosage can be accurately controlled.

Abstract translation: 提供了一种控制种植体剂量的方法。 首先，分析离子注入站内的残留气体，并测量每个残留气体的分压。 此后，测量离子束的电流Im，并计算注入到晶片中的离子束的实际剂量Ir。 由于考虑了离子注入站中的所有残留气体，因此可以精确地控制植入剂量。