公开(公告)号：US20070080381A1

公开(公告)日：2007-04-12

申请号：US11248965

申请日：2005-10-12

Applicant: Chen-Jung Chien ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

Inventor： Chen-Jung Chien ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han

IPC: H01L29/94

CPC classification number: H01L43/12 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/32 ,  H01L43/08

Abstract: MTJ devices commonly degrade when subjected to the heat treatments required by subsequent further processing. This problem has been overcome by protecting the MTJ's sidewalls with a two layer laminate. The first layer is laid down under oxygen-free conditions, no attempt being made to replace any oxygen that is lost during the deposition. This is followed immediately by the deposition of the second layer (usually, but not mandatorily, of the same material as the first layer) in the presence of some oxygen.

Abstract translation: 当经过后续进一步处理所需的热处理时，MTJ装置通常会降解。 通过用双层层压板保护MTJ的侧壁已经克服了这个问题。 第一层被放置在无氧条件下，没有试图取代沉积过程中损失的任何氧气。 这是在存在一些氧气的情况下立即通过沉积第二层（通常但不强制地与第一层相同的材料）沉积。

公开(公告)号：US20070012952A1

公开(公告)日：2007-01-18

申请号：US11182255

申请日：2005-07-15

Applicant: Yimin Guo ,  Po-Kang Wang

Inventor： Yimin Guo ,  Po-Kang Wang

IPC: H01L43/00 ,  H01L21/00

CPC classification number: H01L27/222 ,  G11C11/1675 ,  G11C11/1695

Abstract: A second shield layer, under the master shielding layer, is added to a segmented MRAM array. This additional shielding is patterned so as to provide one shield per bit slice. The placement of longitudinal biasing tabs at the ends of these segmented shields ensures that each segmented shield is a single magnetic domain, making it highly effective as a shield against very small stray fields.

Abstract translation: 在主屏蔽层下方的第二屏蔽层被添加到分段的MRAM阵列。 图案化附加屏蔽，以便每位片提供一个屏蔽。 在这些分段屏蔽的端部处放置纵向偏置突片确保每个分段屏蔽是单个磁畴，使其作为防止非常小的杂散场的屏蔽非常有效。

公开(公告)号：US20130309784A1

公开(公告)日：2013-11-21

申请号：US13955035

申请日：2013-07-31

Applicant: MagIC Technologies, Inc.

Inventor： Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

IPC: H01L43/12

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L29/66007 ,  H01L29/66984 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract translation: 公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / X）n或（CoX）n组合物（其中n为2至30）X覆盖层叠层中的垂直磁各向异性（PMA） 是V，Rh，Ir，Os，Ru，Au，Cr，Mo，Cu，Ti，Re，Mg或Si中的一种，CoX是无序合金。 种子层优选为NiCr，NiFeCr，Hf或其复合物，厚度为10至100埃。 此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

公开(公告)号：US08570793B1

公开(公告)日：2013-10-29

申请号：US13887289

申请日：2013-05-04

Applicant: MagIC Technologies, Inc. ,  International Business Machines Corporation

Inventor： Hsu-Kai Yang ,  Yutaka Nakamura ,  John Debrosse

IPC: G11C11/00

CPC classification number: G11C11/1653 ,  G11C7/18 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1675

Abstract: An array of rows and columns of SMT MRAM cells has each of the columns associated with one of its adjacent columns. Each of the SMT MRAM cells of the column is connected to a true data bit line and each of the SMT MRAM cells of the associated pair of columns is connected to a shared complement data bit line. A shunting switch device is connected between each of the true data bit lines and the shared complement data bit line for selectively connecting one of the true data bit lines to the shared complement data bit line to effectively reduce the resistance of the complement data bit line and to eliminate program disturb effects in adjacent non-selected columns of the SMT MRAM cells.

Abstract translation: SMT MRAM单元格的行和列阵列具有与其相邻列之一相关联的每个列。 列的每个SMT MRAM单元连接到真数据位线，并且相关联的列对的每个SMT MRAM单元连接到共享补码数据位线。 分流开关装置连接在每个真实数据位线和共享补码数据位线之间，用于选择性地将一条真实数据位线连接到共享补码数据位线，以有效地减小补码数据位线的电阻， 以消除SMT MRAM单元的相邻非选择列中的程序干扰效应。

公开(公告)号：US08497559B2

公开(公告)日：2013-07-30

申请号：US11973751

申请日：2007-10-10

Applicant: Tai Min ,  Po Kang Wang

Inventor： Tai Min ,  Po Kang Wang

IPC: H01L29/82 ,  G11C11/00

CPC classification number: H01L43/08 ,  G11C11/1675 ,  H01L43/12

Abstract: A CPP MTJ MRAM unit cell utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The strength of the switching field, Hs of the cell is controlled by the magnetic anisotropy of the cell which, in turn, is controlled by a combination of the shape anisotropy and the stress and magnetostriction of the cell free layer. The coefficient of magnetostriction of the free layer can be adjusted by methods such as adding Nb or Hf to alloys of Ni, Fe, Co and B or by forming the free layer as a lamination of layers having different values of their coefficients of magnetostriction. Thus, by tuning the coefficient of magnetostriction of the cell free layer it is possible to produce a switching field of sufficient magnitude to render the cell thermally stable while maintaining a desirable switching current.

Abstract translation: CPP MTJ MRAM单元利用自旋角动量的传递作为改变自由层的磁矩方向的机制。 开关场的强度，电池的Hs由电池的磁各向异性控制，电池的磁各向异性又由形状各向异性和无电解层的应力和磁致伸缩的组合控制。 自由层的磁致伸缩系数可以通过添加Nb，Hf等Ni，Fe，Co，B的合金的方法来进行，也可以通过形成自由层作为其磁致伸缩系数不同的层的叠层来进行。 因此，通过调谐无电解层的磁致伸缩系数，可以产生足够大的开关场，使电池热稳定，同时保持理想的开关电流。

公开(公告)号：US08470462B2

公开(公告)日：2013-06-25

申请号：US12927939

申请日：2010-11-30

Applicant: Cheng T. Horng ,  Ru-Ying Tong ,  Guenole Jan

Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Guenole Jan

IPC: G11B5/706 ,  H01L43/08 ,  G01R33/09 ,  G11C11/16

CPC classification number: C23C14/3414 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1114

Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation process. A Co10Fe70B20/NCC/Co10Fe70B20, Co10Fe70B20/NCC/Co10Fe70B20/NCC, or Co10Fe70B20/NCC/Co10Fe70B20/NCC/Co10Fe70B20 free layer configuration where NCC is a nanocurrent channel layer made of Fe(20%)-SiO2 is used to minimize Jc0 while enabling higher thermal stability, write voltage, read voltage, Ho, and Hc values that satisfy 64 Mb design requirements. The NCC layer is about 10 Angstroms thick to match the minimum Fe(Si) grain diameter size. The MTJ is annealed with a temperature of about 330° C. to maintain a high magnetoresistive ratio while maximizing Hk⊥(interfacial) for the free layer thereby reducing Heff and lowering the switching current. The Co10Fe70B20 layers are sputter deposited with a low pressure process with a power of about 15 Watts and an Ar flow rate of 40 standard cubic centimeters per minute to lower Heff for the free layer.

Abstract translation: 公开了具有通过自然氧化工艺形成的MgO隧道势垒的STT-RAM MTJ。 使用NCO是由Fe（20％） - SiO 2制成的纳米电流通道层的Co10Fe70B20 / NCC / Co10Fe70B20，Co10Fe70B20 / NCC / Co10Fe70B20 / NCC或Co10Fe70B20 / NCC / Co10Fe70B20 / NCC / Co10Fe70B20 / NCC / Co10Fe70B20自由层配置，以使Jc0最小化 实现满足64Mb设计要求的更高的热稳定性，写电压，读电压，Ho和Hc值。 NCC层的厚度约为10埃，以符合最小Fe（Si）晶粒直径尺寸。 MTJ在约330℃的温度下退火，以保持高的磁阻比，同时使自由层的Hk⊥（界面）最大化，从而降低Heff并降低开关电流。 Co10Fe70B20层用低压工艺溅射沉积，功率约为15瓦，Ar流速为40标准立方厘米每分钟，以降低自由层的Heff。

公开(公告)号：US08372661B2

公开(公告)日：2013-02-12

申请号：US11981127

申请日：2007-10-31

Applicant: Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

IPC: H01L21/00

CPC classification number: H01L43/10 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous CO40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.

Abstract translation: 公开了使自旋转移磁化开关电流（Jc）最小化的STT-RAM MTJ。 MTJ具有形成有自然氧化工艺的MgO隧道阻挡层，以实现低的RA（10欧姆 - um2）和不含CoFeB自由层的较低的固有阻尼常数的Fe或Fe / CoFeB / Fe自由层。 当在360℃退火的MRAM MTJ堆叠中形成具有MgO隧道势垒（自由基氧化法）和CoFeB AP1钉扎层的Fe，FeB或Fe / CoFeB / Fe自由层时，提供高dR / R（TMR ）> 100％，TMR / Rp_cov = 20时读取余量大幅度提高。 100 nm×200 nm椭圆STT-RAM MTJ的高速测量显示，用于切换无Fe层的Jc0是用于切换无定形CO40Fe40B20自由层的一半。 Fe / CoFeB / Fe自由层配置允许为STT-RAM应用增加Hc值。

公开(公告)号：US08334147B2

公开(公告)日：2012-12-18

申请号：US12454910

申请日：2009-05-26

Applicant: Otto Voegeli

Inventor： Otto Voegeli

IPC: G01N33/553

CPC classification number: G01R33/1269 ,  G11C11/5607 ,  G11C11/5664 ,  G11C13/0014 ,  G11C13/0019

Abstract: A magnetic sensor for identifying small magnetic particles bound to a substrate includes a regular, planar orthogonal array of MTJ cells formed within or beneath that substrate. Each MTJ cell has a high aspect ratio and positions of stable magnetic equilibrium along an easy magnetic axis and positions of unstable magnetic equilibrium along a hard magnetic axis. By initializing the magnetizations of each MTJ cell in its unstable hard-axis position, the presence of even a small magnetic particle can exert a sufficient perturbative strayfield to tip the magnetization to its stable position. The magnetization change in an MTJ cell can be measured after each of two successive opposite polarity magnetizations of a bound particle and the presence of the particle thereby detected.

Abstract translation: 用于识别结合到衬底的小磁性颗粒的磁传感器包括形成在该衬底内或下的MTJ电池的规则的平面正交阵列。 每个MTJ电池具有高纵横比和沿易磁轴的稳定磁平衡位置和沿着硬磁轴的不稳定磁平衡位置。 通过初始化每个MTJ电池在其不稳定的硬轴位置的磁化，甚至一个小的磁性颗粒的存在可以发挥足够的扰动杂散磁场将磁化尖端提升到其稳定位置。 MTJ单元中的磁化变化可以在结合粒子的两个连续相反极性磁化之后测量，并且由此检测出粒子的存在。

公开(公告)号：US20120280337A1

公开(公告)日：2012-11-08

申请号：US13068222

申请日：2011-05-05

Applicant: Wei Cao ,  Witold Kula

Inventor： Wei Cao ,  Witold Kula

IPC: H01L29/82 ,  H01L21/8239

CPC classification number: H01L43/10 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/187 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/08 ,  H01L43/12

Abstract: A MTJ in an MRAM array is disclosed with a composite free layer having a FL1/FL2/FL3 configuration where FL1 and FL2 are crystalline magnetic layers and FL3 is an amorphous NiFeX layer for improved bit switching performance. FL1 layer is CoFe which affords a high magnetoresistive (MR) ratio when forming an interface with a MgO tunnel barrier. FL2 is Fe to improve switching performance. NiFeX thickness where X is Hf is preferably between 20 to 40 Angstroms to substantially reduce bit line switching current and number of shorted bits. Annealing at 330° C. to 360° C. provides a high MR ratio of 190%. Furthermore, low Hc and Hk are simultaneously achieved with improved bit switching performance and fewer shorts without compromising other MTJ properties such as MR ratio. As a result of high MR ratio and lower bit-to-bit resistance variation, higher reading margin is realized.

Abstract translation: 公开了一种具有FL1 / FL2 / FL3配置的复合自由层的MRAM阵列，其中FL1和FL2是结晶磁性层，FL3是非晶NiFeX层，用于改善位切换性能。 FL1层是当与MgO隧道势垒形成界面时提供高磁阻（MR）比的CoFe。 FL2是Fe提高开关性能。 其中X为Hf的NiFeX厚度优选在20至40埃之间，以显着降低位线切换电流和短路位数。 在330℃至360℃退火提供190％的高MR比。 此外，低Hc和Hk同时实现，具有改进的位切换性能和更短的短路，而不会影响其他MTJ特性，例如MR比。 由于高MR比和较低的比特电阻变化，实现了更高的读取余量。

公开(公告)号：US08169816B2

公开(公告)日：2012-05-01

申请号：US12584952

申请日：2009-09-15

Applicant: Tai Min ,  Wai-Ming J. Kan ,  David Heim ,  Chyu Jiuh Torng

Inventor： Tai Min ,  Wai-Ming J. Kan ,  David Heim ,  Chyu Jiuh Torng

IPC: G11C11/00

CPC classification number: H01L27/228 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3263 ,  H01L43/08 ,  H01L43/12

Abstract: A cladding structure for a conductive line used to switch a free layer in a MTJ is disclosed and includes two cladding sidewalls on two sides of the conductive line, a top cladding portion on a side of the conductive line facing away from the MTJ, and a highly conductive, non-magnetic spacing control layer formed between the MTJ and conductive line. The spacing control layer has a thickness of 0.02 to 0.12 microns to maintain the distance separating free layer and conductive line between 0.03 and 0.15 microns. The spacing control layer is aligned parallel to the conductive line and contacts a plurality of MTJ elements in a row of MRAM cells. Half-select error problems are avoided while maintaining high write efficiency. A spacing control layer may be formed between a word line and a bottom electrode in a top pinned layer or dual pinned layer configuration.

Abstract translation: 公开了用于切换MTJ中的自由层的用于导电线的包层结构，并且在导电线的两侧包括两个包层侧壁，在远离MTJ的导电线侧的顶部包层部分，以及 在MTJ和导线之间形成的高导电性，非磁性间隔控制层。 间隔控制层的厚度为0.02至0.12微米，以保持分离自由层和导电线之间的距离在0.03和0.15微米之间。 间隔控制层平行于导线对准，并接触一排MRAM单元中的多个MTJ元件。 避免半选择错误问题，同时保持较高的写入效率。 间隔控制层可以形成在顶部钉扎层或双重钉扎层构造中的字线和底部电极之间。