公开(公告)号：US08470462B2

公开(公告)日：2013-06-25

申请号：US12927939

申请日：2010-11-30

Applicant: Cheng T. Horng ,  Ru-Ying Tong ,  Guenole Jan

Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Guenole Jan

IPC: G11B5/706 ,  H01L43/08 ,  G01R33/09 ,  G11C11/16

CPC classification number: C23C14/3414 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1114

Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation process. A Co10Fe70B20/NCC/Co10Fe70B20, Co10Fe70B20/NCC/Co10Fe70B20/NCC, or Co10Fe70B20/NCC/Co10Fe70B20/NCC/Co10Fe70B20 free layer configuration where NCC is a nanocurrent channel layer made of Fe(20%)-SiO2 is used to minimize Jc0 while enabling higher thermal stability, write voltage, read voltage, Ho, and Hc values that satisfy 64 Mb design requirements. The NCC layer is about 10 Angstroms thick to match the minimum Fe(Si) grain diameter size. The MTJ is annealed with a temperature of about 330° C. to maintain a high magnetoresistive ratio while maximizing Hk⊥(interfacial) for the free layer thereby reducing Heff and lowering the switching current. The Co10Fe70B20 layers are sputter deposited with a low pressure process with a power of about 15 Watts and an Ar flow rate of 40 standard cubic centimeters per minute to lower Heff for the free layer.

Abstract translation: 公开了具有通过自然氧化工艺形成的MgO隧道势垒的STT-RAM MTJ。 使用NCO是由Fe（20％） - SiO 2制成的纳米电流通道层的Co10Fe70B20 / NCC / Co10Fe70B20，Co10Fe70B20 / NCC / Co10Fe70B20 / NCC或Co10Fe70B20 / NCC / Co10Fe70B20 / NCC / Co10Fe70B20 / NCC / Co10Fe70B20自由层配置，以使Jc0最小化 实现满足64Mb设计要求的更高的热稳定性，写电压，读电压，Ho和Hc值。 NCC层的厚度约为10埃，以符合最小Fe（Si）晶粒直径尺寸。 MTJ在约330℃的温度下退火，以保持高的磁阻比，同时使自由层的Hk⊥（界面）最大化，从而降低Heff并降低开关电流。 Co10Fe70B20层用低压工艺溅射沉积，功率约为15瓦，Ar流速为40标准立方厘米每分钟，以降低自由层的Heff。

公开(公告)号：US20120135273A1

公开(公告)日：2012-05-31

申请号：US12927939

申请日：2010-11-30

Applicant: Cheng T. Horng ,  Ru-Ying Tong ,  Guenole Jan

Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Guenole Jan

IPC: G11B5/706 ,  B05D5/00 ,  C23C14/34

CPC classification number: C23C14/3414 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1114

Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation process. A Co10Fe70B20/NCC/Co10Fe70B20, Co10Fe70B20/NCC/Co10Fe70B20/NCC, or Co10Fe70B20/NCC/Co10Fe70B20/NCC/Co10Fe70B20 free layer configuration where NCC is a nanocurrent channel layer made of Fe(20%)-SiO2 is used to minimize Jc0 while enabling higher thermal stability, write voltage, read voltage, Ho, and Hc values that satisfy 64 Mb design requirements. The NCC layer is about 10 Angstroms thick to match the minimum Fe(Si) grain diameter size. The MTJ is annealed with a temperature of about 330° C. to maintain a high magnetoresistive ratio while maximizing Hk⊥(interfacial) for the free layer thereby reducing Heff and lowering the switching current. The Co10Fe70B20 layers are sputter deposited with a low pressure process with a power of about 15 Watts and an Ar flow rate of 40 standard cubic centimeters per minute to lower Heff for the free layer.

Abstract translation: 公开了具有通过自然氧化工艺形成的MgO隧道势垒的STT-RAM MTJ。 使用NCO是由Fe（20％） - SiO 2制成的纳米电流通道层的Co10Fe70B20 / NCC / Co10Fe70B20，Co10Fe70B20 / NCC / Co10Fe70B20 / NCC或Co10Fe70B20 / NCC / Co10Fe70B20 / NCC / Co10Fe70B20 / NCC / Co10Fe70B20自由层配置，以使Jc0最小化 实现满足64Mb设计要求的更高的热稳定性，写电压，读电压，Ho和Hc值。 NCC层的厚度约为10埃，以符合最小Fe（Si）晶粒直径尺寸。 MTJ在约330℃的温度下退火，以保持高的磁阻比，同时使自由层的Hk⊥（界面）最大化，从而降低Heff并降低开关电流。 Co10Fe70B20层用低压工艺溅射沉积，功率约为15瓦，Ar流速为40标准立方厘米每分钟，以降低自由层的Heff。

公开(公告)号：US08900884B2

公开(公告)日：2014-12-02

申请号：US13525502

申请日：2012-06-18

Applicant: Witold Kula ,  Ru-Ying Tong ,  Guenole Jan ,  Yu-Jen Wang

Inventor： Witold Kula ,  Ru-Ying Tong ,  Guenole Jan ,  Yu-Jen Wang

IPC: H01L21/00 ,  H01L29/82

CPC classification number: H01L43/10 ,  H01L43/08 ,  H01L43/12

Abstract: An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.

Abstract translation: 公开了所有（111）MTJ堆叠，其中当从层到层不同时，不同结晶取向之间没有转变。 这通过在MgO隧道势垒正下方提供强（111） - 纹理层以在其中诱导（111）取向来实现。

公开(公告)号：US08698260B2

公开(公告)日：2014-04-15

申请号：US13548859

申请日：2012-07-13

Applicant: Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

Inventor： Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

IPC: H01L29/82

CPC classification number: H01L43/08 ,  H01L43/10

Abstract: A magnetic element in a spintronic device or serving as a propagation medium in a domain wall motion device is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction. The free layer may be a single layer or a composite and is comprised of a glassing agent that has a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. A CoFeB free layer selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region.

Abstract translation: 公开了一种自旋电子器件中的磁性元件或用作畴壁运动装置中的传播介质的磁性元件，其中分别具有垂直Hk增强层和隧道势垒的自由层的第一和第二界面产生增强的表面垂直各向异性以增加热量 磁性隧道结中的稳定性。 自由层可以是单层或复合物，并且由在中间部分具有第一浓度并且在第一和第二界面附近的区域中的第二浓度小于第一浓度的玻璃化剂组成。 CoFeB自由层选择性地沿着第一和第二界面结晶，但是在含有玻璃试剂的中间区域保持非晶形特征，提供退火温度小于中间区域的结晶温度。

公开(公告)号：US20130334629A1

公开(公告)日：2013-12-19

申请号：US13525502

申请日：2012-06-18

Applicant: Witold Kula ,  Ru-Ying Tong ,  Guenole Jan ,  Yu-Jen Wang

Inventor： Witold Kula ,  Ru-Ying Tong ,  Guenole Jan ,  Yu-Jen Wang

IPC: H01L43/10 ,  H01L43/12

CPC classification number: H01L43/10 ,  H01L43/08 ,  H01L43/12

Abstract: An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.

Abstract translation: 公开了所有（111）MTJ堆叠，其中当从层到层不同时，不同结晶取向之间没有转变。 这通过在MgO隧道势垒正下方提供强（111） - 纹理层以在其中诱导（111）取向来实现。

公开(公告)号：US20130270523A1

公开(公告)日：2013-10-17

申请号：US13448557

申请日：2012-04-17

Applicant: Yu-Jen Wang ,  Witold Kula ,  Ru-Ying Tong ,  Guenole Jan

Inventor： Yu-Jen Wang ,  Witold Kula ,  Ru-Ying Tong ,  Guenole Jan

IPC: H01L43/10 ,  H01L43/12

CPC classification number: G01R33/091 ,  G11B5/3906 ,  H01F10/123 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1143

Abstract: A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased.

Abstract translation: 在具有隧道势垒层和封盖层的界面处，在自由层的顶表面和底表面中的一个或两个上形成含硼或含硼的除尘层，以改善热稳定性，同时保持MTJ堆叠的其它磁性能 。 每个除尘层的厚度为0.2至20埃，可用于沉积，或在高达400℃或更高的温度下使用，或随后在400℃或更高温度下退火。 自由层可以是CoFe，Co，CoFeB或CoFeNiB的单层，或者可以包括非磁性插入层。 所得MTJ适用于STT-MRAM存储器元件或自旋电子器件。 垂直磁各向异性在高达400℃或更高的温度下保持在自由层中。 实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。

公开(公告)号：US10312433B2

公开(公告)日：2019-06-04

申请号：US13441158

申请日：2012-04-06

Applicant: Guenole Jan ,  Ru-Ying Tong

Inventor： Guenole Jan ,  Ru-Ying Tong

IPC: H01L29/82 ,  H01L21/02 ,  H01L43/12 ,  H01L43/08 ,  H01F10/32 ,  H01F41/30 ,  G11C11/16

Abstract: A ferromagnetic layer is capped with a metallic oxide (or nitride) layer that provides a perpendicular-to-plane magnetic anisotropy to the layer. The surface of the ferromagnetic layer is treated with a plasma to prevent diffusion of oxygen (or nitrogen) into the layer interior. An exemplary metallic oxide layer is formed as a layer of metallic Mg that is plasma treated to reduce its grain size and enhance the diffusivity of oxygen into its interior. Then the plasma treated Mg layer is naturally oxidized and, optionally, is again plasma treated to reduce its thickness and remove the oxygen rich upper surface.

公开(公告)号：US08860156B2

公开(公告)日：2014-10-14

申请号：US13609780

申请日：2012-09-11

Applicant: Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

Inventor： Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

IPC: H01L29/82

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/307 ,  H01L27/222 ,  H01L27/224 ,  H01L29/82 ,  H01L43/10

Abstract: A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an AP2/antiferromagnetic (AF) coupling/CoFeB configuration. The SAF structure is thinned to reduce the fringing (Ho) field while maintaining high coercivity. The AP2 reference layer has intrinsic perpendicular magnetic anisotropy (PMA) and induces PMA in a thin CoFeB layer through AF coupling. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. When AP2 is (Co/Ni)4, and CoFeB thickness is 7.5 Angstroms, Ho is reduced to 125 Oe, Hc is 1000 Oe, and a balanced saturation magnetization-thickness product (Mst)=0.99 is achieved. The SAF structure may also be represented as FL2/AF coupling/CoFeB where FL2 is a ferromagnetic layer with intrinsic PMA.

Abstract translation: 公开了一种用于自旋电子器件的合成反铁磁（SAF）结构，并具有AP2 /反铁磁（AF）耦合/ CoFeB配置。 SAF结构变薄以减少边缘（Ho）场，同时保持高矫顽力。 AP2参考层具有固有的垂直磁各向异性（PMA），并通过AF耦合在薄CoFeB层中诱导PMA。 在一个实施例中，通过在Ru AF耦合层的顶表面和底表面上插入Co除尘层来改善AF耦合。 当AP2为（Co / Ni）4，CoFeB厚度为7.5埃时，Ho降至125Oe，Hc为1000Oe，平衡饱和磁化强度产物（Mst）= 0.99。 SAF结构也可以表示为FL2 / AF耦合/ CoFeB，其中FL2是具有固有PMA的铁磁层。

公开(公告)号：US08710603B2

公开(公告)日：2014-04-29

申请号：US13408555

申请日：2012-02-29

Applicant: Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

Inventor： Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

IPC: H01L29/82

CPC classification number: H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic element is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction (MTJ). The free layer may be a single layer or a composite and is comprised of one or more glassing agents that have a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. As a result, a CoFeB free layer, for example, selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.

Abstract translation: 公开了一种磁性元件，其中具有垂直Hk增强层和隧道势垒的自由层的第一和第二界面分别产生增强的表面垂直各向异性以增加磁性隧道结（MTJ）中的热稳定性。 自由层可以是单层或复合物，并且由一个或多个在中间部分具有第一浓度并且在第一和第二界面附近的区域中的第二浓度小于第一浓度的玻璃化剂组成。 结果，例如，CoFeB自由层沿着第一界面和第二界面选择性地结晶，但是在含有提供退火温度的玻璃试剂的中间区域中保持无定形特征小于中间区域的结晶温度。 磁性元件可以是自旋电子器件的一部分或用作域壁运动装置中的传播介质。

公开(公告)号：US08508006B2

公开(公告)日：2013-08-13

申请号：US13561201

申请日：2012-07-30

Applicant: Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

Inventor： Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

IPC: H01L29/82 ,  H01L43/00 ,  H01L29/34 ,  H01L29/74 ,  H01L31/111

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L29/66007 ,  H01L29/66984 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. A CoFeB layer may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract translation: 公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / X）n或（CoX）n组合物（其中n为2至30）X覆盖层叠层中的垂直磁各向异性（PMA） 是V，Rh，Ir，Os，Ru，Au，Cr，Mo，Cu，Ti，Re，Mg或Si中的一种，CoX是无序合金。 可以在层压层和隧道势垒层之间形成CoFeB层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。