Invention Grant
US08508006B2 Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
有权
Co / Ni多层膜，具有改进的磁性器件应用的面外各向异性
- Patent Title: Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
- Patent Title (中): Co / Ni多层膜，具有改进的磁性器件应用的面外各向异性
-
Application No.: US13561201Application Date: 2012-07-30
-
Publication No.: US08508006B2Publication Date: 2013-08-13
- Inventor: Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
- Applicant: Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
- Applicant Address: US CA Milpitas
- Assignee: MagIC Technologies, Inc.
- Current Assignee: MagIC Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/00 ; H01L29/34 ; H01L29/74 ; H01L31/111
Abstract:
A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. A CoFeB layer may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
Public/Granted literature
- US20120299134A1 Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications Public/Granted day:2012-11-29
Information query
IPC分类:
