公开(公告)号：US08169816B2

公开(公告)日：2012-05-01

申请号：US12584952

申请日：2009-09-15

Applicant: Tai Min ,  Wai-Ming J. Kan ,  David Heim ,  Chyu Jiuh Torng

Inventor： Tai Min ,  Wai-Ming J. Kan ,  David Heim ,  Chyu Jiuh Torng

IPC: G11C11/00

CPC classification number: H01L27/228 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3263 ,  H01L43/08 ,  H01L43/12

Abstract: A cladding structure for a conductive line used to switch a free layer in a MTJ is disclosed and includes two cladding sidewalls on two sides of the conductive line, a top cladding portion on a side of the conductive line facing away from the MTJ, and a highly conductive, non-magnetic spacing control layer formed between the MTJ and conductive line. The spacing control layer has a thickness of 0.02 to 0.12 microns to maintain the distance separating free layer and conductive line between 0.03 and 0.15 microns. The spacing control layer is aligned parallel to the conductive line and contacts a plurality of MTJ elements in a row of MRAM cells. Half-select error problems are avoided while maintaining high write efficiency. A spacing control layer may be formed between a word line and a bottom electrode in a top pinned layer or dual pinned layer configuration.

Abstract translation: 公开了用于切换MTJ中的自由层的用于导电线的包层结构，并且在导电线的两侧包括两个包层侧壁，在远离MTJ的导电线侧的顶部包层部分，以及 在MTJ和导线之间形成的高导电性，非磁性间隔控制层。 间隔控制层的厚度为0.02至0.12微米，以保持分离自由层和导电线之间的距离在0.03和0.15微米之间。 间隔控制层平行于导线对准，并接触一排MRAM单元中的多个MTJ元件。 避免半选择错误问题，同时保持较高的写入效率。 间隔控制层可以形成在顶部钉扎层或双重钉扎层构造中的字线和底部电极之间。

公开(公告)号：US20110062536A1

公开(公告)日：2011-03-17

申请号：US12584952

申请日：2009-09-15

Applicant: Tai Min ,  Wai-Ming J. Kan ,  David E. Heim ,  Chyu Jiuh Torng

Inventor： Tai Min ,  Wai-Ming J. Kan ,  David E. Heim ,  Chyu Jiuh Torng

IPC: H01L29/82 ,  H01L21/00

CPC classification number: H01L27/228 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3263 ,  H01L43/08 ,  H01L43/12

Abstract: A cladding structure for a conductive line used to switch a free layer in a MTJ is disclosed and includes two cladding sidewalls on two sides of the conductive line, a top cladding portion on a side of the conductive line facing away from the MTJ, and a highly conductive, non-magnetic spacing control layer formed between the MTJ and conductive line. The spacing control layer has a thickness of 0.02 to 0.12 microns to maintain the distance separating free layer and conductive line between 0.03 and 0.15 microns. The spacing control layer is aligned parallel to the conductive line and contacts a plurality of MTJ elements in a row of MRAM cells. Half-select error problems are avoided while maintaining high write efficiency. A spacing control layer may be formed between a word line and a bottom electrode in a top pinned layer or dual pinned layer configuration.

Abstract translation: 公开了用于切换MTJ中的自由层的用于导电线的包层结构，并且在导电线的两侧包括两个包层侧壁，在远离MTJ的导电线侧的顶部包层部分，以及 在MTJ和导线之间形成的高导电性，非磁性间隔控制层。 间隔控制层的厚度为0.02至0.12微米，以保持分离自由层和导电线之间的距离在0.03和0.15微米之间。 间隔控制层平行于导线对准，并接触一排MRAM单元中的多个MTJ元件。 避免半选择错误问题，同时保持较高的写入效率。 间隔控制层可以形成在顶部钉扎层或双重钉扎层构造中的字线和底部电极之间。

公开(公告)号：US06129957A

公开(公告)日：2000-10-10

申请号：US415247

申请日：1999-10-12

Applicant: Rongfu Xiao ,  Chyu-Jiuh Torng ,  Tai Min ,  Hui-Chuan Wang ,  Cherng-Chyi Han ,  Mao-Min Chen ,  Po-Kang Wan

Inventor： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Tai Min ,  Hui-Chuan Wang ,  Cherng-Chyi Han ,  Mao-Min Chen ,  Po-Kang Wan

IPC: G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01F10/32 ,  H01F41/22 ,  H01F41/30 ,  H01L43/08 ,  H01L43/12 ,  B29C35/08 ,  H01F1/00

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/304 ,  G11B2005/3996 ,  G11B5/3163 ,  G11B5/3932 ,  G11B5/3954 ,  H01F10/3286 ,  Y10S428/90 ,  Y10T428/1129

Abstract: A method of manufacturing a magnetoresistive head comprises forming a magnetoresistive structure with a magnetoresistive element with a first AFM element. Perform a first annealing step at a high temperature with a high magnetic field. Form the remaining MR structure including second AFM elements. Perform a low magnetic field (H.sub.ann) annealing step following the fabrication of the second AFM elements. Then perform a no externally applied field (H.sub.ann =0) annealing step at a high temperature to increase the H.sub.ex of the second AFM element to full strength, whereby the stability of the first AFM element is enhanced or increases its H.sub.ex if there were a decrease during the low magnetic field annealing step.

Abstract translation: 制造磁阻头的方法包括用具有第一AFM元件的磁阻元件形成磁阻结构。 在高磁场下进行第一退火步骤。 形成剩下的MR结构，包括第二个AFM元素。 在制造第二AFM元件之后执行低磁场（汉斯）退火步骤。 然后在高温下进行无外部施加的场（Hann = 0）退火步骤，以将第二AFM元件的Hex增加到全强度，由此如果存在减少，则第一AFM元件的稳定性增强或增加其Hex 在低磁场退火步骤期间。

公开(公告)号：US07885094B2

公开(公告)日：2011-02-08

申请号：US12150241

申请日：2008-04-25

Applicant: Tai Min ,  David Heim

Inventor： Tai Min ,  David Heim

IPC: G11C11/00

CPC classification number: B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/325 ,  H01F10/3254 ,  Y10S977/935

Abstract: The incidence of half-select errors during MRAM programming has been significantly reduced by giving the free layer a shape that approximates an X so that, when the free layer switches, the magnetization in the arms of the X guides the magnetization in the central section (the X's intersection area) causing it to rotate towards the hard axis in two opposing directions. This raises the free layer's switching energy barrier, thereby reducing half-select errors.

Abstract translation: MRAM编程中的半选择误差的发生率通过使自由层接近X的形状而显着降低，使得当自由层切换时，X的臂中的磁化引导中心部分的磁化（ X的交叉区域）使其在两个相对的方向上朝着硬轴旋转。 这提高了自由层的开关能量势垒，从而减少了半选择误差。

公开(公告)号：US20090268512A1

公开(公告)日：2009-10-29

申请号：US12150241

申请日：2008-04-25

Applicant: Tai Min ,  David Heim

Inventor： Tai Min ,  David Heim

IPC: G11C11/02 ,  H01F7/00

CPC classification number: B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/325 ,  H01F10/3254 ,  Y10S977/935

Abstract: The incidence of half-select errors during MRAM programming has been significantly reduced by giving the free layer a shape that approximates an X so that, when the free layer switches, the magnetization in the arms of the X guides the magnetization in the central section (the X's intersection area) causing it to rotate towards the hard axis in two opposing directions. This raises the free layer's switching energy barrier, thereby reducing half-select errors.

Abstract translation: MRAM编程中的半选择误差的发生率通过使自由层接近X的形状而显着降低，使得当自由层切换时，X的臂中的磁化引导中心部分的磁化（ X的交叉区域）使其在两个相对的方向上朝着硬轴旋转。 这提高了自由层的开关能量势垒，从而减少了半选择误差。

公开(公告)号：US08755149B2

公开(公告)日：2014-06-17

申请号：US13620764

申请日：2012-09-15

Applicant: Suping Song ,  Lijie Guan ,  Tai Min ,  Yuhui Tang

Inventor： Suping Song ,  Lijie Guan ,  Tai Min ,  Yuhui Tang

IPC: G11B5/127

CPC classification number: G11B5/315 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3163

Abstract: A magnetic recording head is fabricated with a pole tip shielded laterally on its sides by a pair of symmetrically disposed side shields formed of porous heterogeneous material that contains non-magnetic inclusions. The non-magnetic inclusions, when properly incorporated within the magnetic matrix of the shields, promote the formation of flux loops within the shields that have portions that are parallel to the ABS and do not display locally disorganized and dynamic regions of flux during the creation of magnetic transitions within the recording medium by the magnetic pole. These flux loop portions, combine with the magnetic flux emerging from the main pole to create a net writing field that significantly reduces adjacent track erasures (ATE) and wide area erasures (WATE).

Abstract translation: 制造磁记录头，其极侧通过由包含非磁性夹杂物的多孔异质材料形成的一对对称设置的侧屏蔽侧向屏蔽。 当非磁性夹杂物适当地并入屏蔽体的磁矩阵中时，促进在屏蔽体内形成具有与ABS平行的部分的磁通环，并且在创建过程中不显示局部无组织和动态的磁通区域 通过磁极在记录介质内的磁转变。 这些磁通回路部分与从主极产生的磁通相结合，形成一个净写入场，显着地减少了相邻轨道擦除（ATE）和广域擦除（WATE）。

公开(公告)号：US08609262B2

公开(公告)日：2013-12-17

申请号：US12460412

申请日：2009-07-17

Applicant: Cheng T. Horng ,  Ru-Ying Tong ,  Guangli Liu ,  Robert Beach ,  Witold Kula ,  Tai Min

Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Guangli Liu ,  Robert Beach ,  Witold Kula ,  Tai Min

IPC: G11B5/706 ,  H01L43/08 ,  H01L29/82 ,  G01R33/09 ,  G11C11/16

CPC classification number: H01L43/12 ,  B82Y25/00 ,  C23C14/3414 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.

Abstract translation: 公开了一种STT-RAM MTJ，其具有通过自然氧化形成的MgO隧道势垒，并含有氧表面活性剂层以形成更均匀的MgO层和较低的击穿分布百分比。 具有中等纳米通道层的CoFeB / NCC / CoFeB复合自由层使Jc0最小化，同时实现满足64Mb设计要求的热稳定性，写电压，读电压和Hc值。 NCC层在绝缘体基体中具有RM颗粒，其中R是Co，Fe或Ni，M是诸如Si或Al的金属。 NCC厚度保持在最小RM晶粒尺寸周围，以避免RM颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。 可以在自由层中包括第二NCC层和第三CoFeB层，或者可以将第二NCC层插入Ru覆盖层的下方。

公开(公告)号：US08498079B1

公开(公告)日：2013-07-30

申请号：US13620760

申请日：2012-09-15

Applicant: Suping Song ,  Yuhui Tang ,  Tai Min ,  Lijie Guan

Inventor： Suping Song ,  Yuhui Tang ,  Tai Min ,  Lijie Guan

IPC: G11B5/127

CPC classification number: G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/315 ,  G11B5/3163

Abstract: A PMR writer is disclosed with an all wrap around design wherein the leading shield, side shields, and composite trailing shield are comprised of an anisotropic (−Ku) magnetic layer, and where the leading shield and side shields adjoin a gap layer. The composite shield has a first layer made of an isotropic magnetic material adjoining the write gap, and the anisotropic (−Ku) layer adjoins the first trailing shield layer on a side opposite the write gap. The main pole may have a tapered leading side and a tapered trailing side with the anisotropic (−Ku) leading shield and trailing shield layers extending a greater distance from the ABS than the ends of the tapered main pole sides. Adjacent track erasure is minimized while on-track write field and field gradient are improved.

Abstract translation: 公开了一种全息环绕设计的PMR写入器，其中前屏蔽，侧屏蔽和复合拖尾屏蔽由各向异性（-Ku）磁性层组成，并且其中前屏蔽和侧屏蔽邻接间隙层。 复合屏蔽具有由与写入间隙相邻的各向同性磁性材料制成的第一层，各向异性（-Ku）层与写入间隙相对的一侧与第一后屏蔽层相邻。 主极可以具有锥形前缘和锥形后缘，各向异性（-Ku）前屏蔽和后屏蔽层比锥形主极侧的端部从ABS延伸更大的距离。 相邻的磁道擦除最小化，同时提高了磁道写入场和磁场梯度。

公开(公告)号：US08422287B2

公开(公告)日：2013-04-16

申请号：US12807611

申请日：2010-09-09

Applicant: Tai Min ,  Qiang Chen ,  Po Kang Wang

Inventor： Tai Min ,  Qiang Chen ,  Po Kang Wang

IPC: G11C11/14

CPC classification number: G11C11/161 ,  G11C11/1659 ,  G11C11/1675

Abstract: An MRAM array structure and a method of its operation that is not subject to accidental writing on half-selected elements. Each element of the MRAM is an MTJ (magnetic tunneling junction) cell operating in accord with an STT (spin torque transfer) scheme for changing its free layer magnetization state and each cell is patterned to have a C-shape in the horizontal plane. The cell thereby operates by C-mode switching to provide stability against accidental writing by half-selection. During operation, switching of a cell's magnetization is accomplished with the assist of the pulsed magnetic fields of additional word lines that are formed either orthogonal to or parallel to the existing bit lines and that can carry currents in either direction as required to provide the assist.

Abstract translation: MRAM阵列结构及其操作方法，不会在半选择元素上偶然写入。 MRAM的每个元件是根据用于改变其自由层磁化状态的STT（自旋转矩传递）方案操作的MTJ（磁性隧道结）单元，并且每个单元被图案化以在水平面中具有C形。 因此，电池通过C模式切换来操作，以通过半选择提供对意外写入的稳定性。 在操作期间，通过与现有位线正交或平行的附加字线的脉冲磁场的帮助来实现电池的磁化的切换，并且可以根据需要在任一方向上承载电流以提供辅助。

公开(公告)号：US07994596B2

公开(公告)日：2011-08-09

申请号：US11515533

申请日：2006-09-05

Applicant: Tai Min ,  Cheng Horng ,  Po Kang Wang

Inventor： Tai Min ,  Cheng Horng ,  Po Kang Wang

IPC: H01L29/82 ,  G11C11/15

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

Abstract: An MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.

Abstract translation: 提供MTJ存储器单元和/或这种单元的阵列，其中每个这样的单元具有直径为1.0微米或更小的小的圆形水平横截面，并且其中每个这样的单元的铁磁性自由层具有由 与在自由层上形成的薄的反铁磁层的磁耦合。 如此提供的MTJ存储单元对于形状不规则和边缘缺陷的敏感性远低于现有技术的单元。