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    Method of manufracturing structure of dielectric grid for a semiconductor device
    42.
    发明授权
    Method of manufracturing structure of dielectric grid for a semiconductor device 有权
    半导体器件电介质栅的制造方法

    公开(公告)号：US09419048B2

    公开(公告)日：2016-08-16

    申请号：US14981787

    申请日：2015-12-28

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Chun-Hao Chou ,  Yin-Chieh Huang ,  Kuo-Cheng Lee ,  Chi-Cherng Jeng ,  Hsin-Chi Chen

    IPC分类号： H01L21/00 ,  H01L27/146

    CPC分类号： H01L27/14621 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

    摘要： A method of forming an image sensor device is disclosed. The method includes providing a substrate having sensor elements in a pixel region and having no sensor elements in a non-pixel region. The method further includes forming metal pillars over the pixel region and a metal shield layer over the non-pixel region. The metal pillars are disposed above spaces between adjacent sensor elements. The method further includes depositing a dielectric layer over the metal pillars and the metal shield layer; and etching the dielectric layer to form first and second trenches. The first trenches are formed over the pixel region and the second trenches are formed over the non-pixel region. Each of the first trenches aligns to a respective sensor element and is surrounded by the dielectric layer at its bottom and sidewall surfaces.

    摘要翻译： 公开了一种形成图像传感器装置的方法。 该方法包括在像素区域中提供具有传感器元件的基板，并且在非像素区域中不具有传感器元件。 该方法还包括在像素区域上形成金属柱和在非像素区域上形成金属屏蔽层。 金属支柱设置在相邻传感器元件之间的空间之上。 该方法还包括在金属柱和金属屏蔽层之上沉积介电层; 并蚀刻介电层以形成第一和第二沟槽。 第一沟槽形成在像素区域上，并且第二沟槽形成在非像素区域上。 每个第一沟槽对准相应的传感器元件，并且在其底部和侧壁表面处被电介质层包围。

    Structure of dielectric grid for a semiconductor device
    44.
    发明授权
    Structure of dielectric grid for a semiconductor device 有权
    半导体器件介质栅格的结构

    公开(公告)号：US09224781B2

    公开(公告)日：2015-12-29

    申请号：US14088957

    申请日：2013-11-25

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Chun-Hao Chou ,  Yin-Chieh Huang ,  Kuo-Cheng Lee ,  Chi-Cherng Jeng ,  Hsin-Chi Chen

    IPC分类号： H01L31/0232 ,  H01L27/146

    CPC分类号： H01L27/14621 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

    摘要： An image sensor device and a method for manufacturing the image sensor device are provided. An image sensor device includes a pixel region and a non-pixel region in a substrate. In the pixel region there is a plurality of sensor elements. The non-pixel region is adjacent to the pixel region and has no sensor element. Dielectric grids are disposed in the pixel region with a first dielectric trench between two adjacent dielectric grids. The first dielectric trench aligns to a respective sensor element. Second dielectric trenches are disposed in the non-pixel region.

    摘要翻译： 提供了图像传感器装置和图像传感器装置的制造方法。 图像传感器装置包括衬底中的像素区域和非像素区域。 在像素区域中有多个传感器元件。 非像素区域与像素区域相邻并且没有传感器元件。 电介质栅格设置在像素区域中，在两个相邻的电介质栅之间具有第一电介质沟槽。 第一电介质沟槽对准相应的传感器元件。 第二介质沟槽设置在非像素区域中。

    Structure Of Dielectric Grid For A Semiconductor Device
    47.
    发明申请
    Structure Of Dielectric Grid For A Semiconductor Device 有权
    一种半导体器件的电介质结构

    公开(公告)号：US20150145083A1

    公开(公告)日：2015-05-28

    申请号：US14088957

    申请日：2013-11-25

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Chun-Hao Chou ,  Yin-Chieh Huang ,  Kuo-Cheng Lee ,  Chi-Cherng Jeng ,  Hsin-Chi Chen

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14621 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

    摘要： An image sensor device and a method for manufacturing the image sensor device are provided. An image sensor device includes a pixel region and a non-pixel region in a substrate. In the pixel region there is a plurality of sensor elements. The non-pixel region is adjacent to the pixel region and has no sensor element. Dielectric grids are disposed in the pixel region with a first dielectric trench between two adjacent dielectric grids. The first dielectric trench aligns to a respective sensor element. Second dielectric trenches are disposed in the non-pixel region.

    摘要翻译： 提供了图像传感器装置和图像传感器装置的制造方法。 图像传感器装置包括衬底中的像素区域和非像素区域。 在像素区域中有多个传感器元件。 非像素区域与像素区域相邻并且没有传感器元件。 电介质栅格设置在像素区域中，在两个相邻的电介质栅之间具有第一电介质沟槽。 第一电介质沟槽对准相应的传感器元件。 第二介质沟槽设置在非像素区域中。

    Metal Gate Stack Having TiAlCN as Work Function Layer and/or Blocking/Wetting Layer
    50.
    发明申请
    Metal Gate Stack Having TiAlCN as Work Function Layer and/or Blocking/Wetting Layer 有权
    具有TiAlCN作为功能层和/或阻挡/润湿层的金属栅极堆叠

    公开(公告)号：US20140319626A1

    公开(公告)日：2014-10-30

    申请号：US14328299

    申请日：2014-07-10

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Shiu-Ko Jangjian ,  Chi-Wen Liu ,  Chi-Cherng Jeng ,  Ting-Chun Wang

    IPC分类号： H01L29/423 ,  H01L29/78 ,  H01L21/28 ,  H01L29/66

    CPC分类号： H01L29/66545 ,  H01L21/28088 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

    摘要： A metal gate stack having a titanium aluminum carbon nitride (TiAlCN) as a work function layer and/or a multi-function blocking/wetting layer, and methods of manufacturing the same, are disclosed. In an example, an integrated circuit device includes a semiconductor substrate and a gate stack disposed over the semiconductor substrate. The gate stack includes a gate dielectric layer disposed over the semiconductor substrate, a multi-function blocking/wetting layer disposed over the gate dielectric layer, wherein the multi-function blocking/wetting layer includes TiAlCN, a work function layer disposed over the multi-function blocking/wetting layer, and a conductive layer disposed over the work function layer.

    摘要翻译： 公开了具有钛铝碳氮化物（TiAlCN）作为功函数层和/或多功能阻挡/润湿层的金属栅极堆叠及其制造方法。 在一个示例中，集成电路器件包括设置在半导体衬底上的半导体衬底和栅极堆叠。 所述栅极堆叠包括设置在所述半导体衬底上的栅极电介质层，设置在所述栅极介电层上的多功能阻挡/润湿层，其中所述多功能阻挡/润湿层包括TiAlCN， 功能阻挡/润湿层，以及布置在功函数层上的导电层。