发明授权
- 专利标题: Method of manufracturing structure of dielectric grid for a semiconductor device
- 专利标题(中): 半导体器件电介质栅的制造方法
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申请号: US14981787申请日: 2015-12-28
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公开(公告)号: US09419048B2公开(公告)日: 2016-08-16
- 发明人: Chun-Hao Chou , Yin-Chieh Huang , Kuo-Cheng Lee , Chi-Cherng Jeng , Hsin-Chi Chen
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L27/146
摘要:
A method of forming an image sensor device is disclosed. The method includes providing a substrate having sensor elements in a pixel region and having no sensor elements in a non-pixel region. The method further includes forming metal pillars over the pixel region and a metal shield layer over the non-pixel region. The metal pillars are disposed above spaces between adjacent sensor elements. The method further includes depositing a dielectric layer over the metal pillars and the metal shield layer; and etching the dielectric layer to form first and second trenches. The first trenches are formed over the pixel region and the second trenches are formed over the non-pixel region. Each of the first trenches aligns to a respective sensor element and is surrounded by the dielectric layer at its bottom and sidewall surfaces.
公开/授权文献
- US20160111465A1 STRUCTURE OF DIELECTRIC GRID FOR A SEMICONDUCTOR DEVICE 公开/授权日:2016-04-21
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