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公开(公告)号：US11380721B2
公开(公告)日：2022-07-05
申请号：US16790386
申请日：2020-02-13
发明人： Chia-Yu Wei , Fu-Cheng Chang , Hsin-Chi Chen , Ching-Hung Kao , Chia-Pin Cheng , Kuo-Cheng Lee , Hsun-Ying Huang , Yen-Liang Lin
IPC分类号： H01L29/78 , H01L27/146 , H01L29/423 , H01L29/06
摘要： A gate structure includes a gate and a first isolation structure having a top surface and a bottom surface. The gate includes a first sidewall adjacent to the first isolation structure, a second sidewall, a first horizontal surface adjacent to a bottom edge of the first sidewall and a bottom edge of the second sidewall, the first horizontal surface being between the top surface of the first isolation structure and the bottom surface of the first isolation structure. The gate also includes a second horizontal surface adjacent to a top edge of the second sidewall. An effective channel width defined by the gate structure includes a height of the second sidewall and a width of the second horizontal surface.
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公开(公告)号：US10566361B2
公开(公告)日：2020-02-18
申请号：US15591689
申请日：2017-05-10
发明人： Chia-Yu Wei , Fu-Cheng Chang , Hsin-Chi Chen , Ching-Hung Kao , Chia-Pin Cheng , Kuo-Cheng Lee , Hsun-Ying Huang , Yen-Liang Lin
IPC分类号： H01L27/146 , H01L29/423 , H01L29/78 , H01L29/06
摘要： A gate structure includes a gate and a first isolation structure having a top surface and a bottom surface. The gate includes a first sidewall adjacent to the first isolation structure, a second sidewall, a first horizontal surface adjacent to a bottom edge of the first sidewall and a bottom edge of the second sidewall, the first horizontal surface being between the top surface of the first isolation structure and the bottom surface of the first isolation structure. The gate also includes a second horizontal surface adjacent to a top edge of the second sidewall. An effective channel width defined by the gate structure includes a height of the second sidewall and a width of the second horizontal surface.
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公开(公告)号：US11784198B2
公开(公告)日：2023-10-10
申请号：US17830707
申请日：2022-06-02
发明人： Chia-Yu Wei , Fu-Cheng Chang , Hsin-Chi Chen , Ching-Hung Kao , Chia-Pin Cheng , Kuo-Cheng Lee , Hsun-Ying Huang , Yen-Liang Lin
IPC分类号： H01L29/06 , H01L27/146 , H01L29/423 , H01L29/78
CPC分类号： H01L27/14614 , H01L27/14643 , H01L29/0653 , H01L29/4236 , H01L29/42376 , H01L29/78 , H01L29/7853
摘要： A semiconductor device includes a plurality of isolation structures, wherein each isolation structure of the plurality of isolation structures is spaced from an adjacent isolation structure of the plurality of isolation structures in a first direction. The semiconductor device further includes a gate structure. The gate structure includes a top surface; a first sidewall angled at a non-perpendicular angle with respect to the top surface; and a second sidewall angled with respect to the top surface. The gate structure further includes a first horizontal surface extending between the first sidewall and the second sidewall, wherein the first horizontal surface is parallel to the top surface, and a dimension of the gate structure in a second direction, perpendicular to the first direction, is less than a dimension of each of the plurality of isolation structures in the second direction.
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公开(公告)号：US10686005B2
公开(公告)日：2020-06-16
申请号：US16263750
申请日：2019-01-31
发明人： Chia-Yu Wei , Chin-Hsun Hsiao , Yi-Hsing Chu , Yen-Liang Lin , Yung-Lung Hsu , Hsin-Chi Chen
IPC分类号： H01L27/146
摘要： A semiconductor structure includes a semiconductive substrate including a first side and a second side opposite to the first side, a radiation sensing device disposed in the semiconductive substrate, and an ILD disposed over the first side of the semiconductive substrate, and a conductive pad disposed within the semiconductive substrate and the ILD, and electrically connected to an interconnect structure. A top surface of the conductive pad is between the first side of the semiconductive substrate and the second side of the semiconductor substrate.
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公开(公告)号：US11843007B2
公开(公告)日：2023-12-12
申请号：US17528542
申请日：2021-11-17
发明人： Chia-Yu Wei , Hsin-Chi Chen , Kuo-Cheng Lee , Ping-Hao Lin , Hsun-Ying Huang , Yen-Liang Lin , Yu Ting Kao
IPC分类号： H01L27/146 , H01L29/78
CPC分类号： H01L27/14607 , H01L27/1461 , H01L27/1463 , H01L27/14612 , H01L27/14621 , H01L27/14636 , H01L27/14641 , H01L27/14689 , H01L27/1464 , H01L27/14627 , H01L27/14638 , H01L27/14645 , H01L27/14647 , H01L27/14687 , H01L29/7827
摘要： The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a substrate and a transfer gate disposed from a front-side surface of the substrate. The CMOS image sensor further comprises a photo detecting column disposed at one side of the transfer gate within the substrate. The photo detecting column comprises a doped sensing layer comprising one or more recessed portions along a circumference of the doped sensing layer in parallel to the front-side surface of the substrate. By forming the photo detecting column with recessed portions, a junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.
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公开(公告)号：US11018179B2
公开(公告)日：2021-05-25
申请号：US16897251
申请日：2020-06-09
发明人： Chia-Yu Wei , Chin-Hsun Hsiao , Yi-Hsing Chu , Yen-Liang Lin , Yung-Lung Hsu , Hsin-Chi Chen
IPC分类号： H01L21/786 , H01L27/146
摘要： A semiconductor structure includes an ILD disposed over a semiconductive substrate, an isolation disposed between the semiconductive substrate and the ILD, and a conductive pad disposed within the semiconductive substrate, the isolation and the ILD. A top surface of the conductive pad is substantially parallel with two surfaces of the semiconductive substrate. The top surface of the conductive pad is between the two surfaces of the semiconductive substrate. Sidewalls of the conductive pad are in direct contact with the ILD and the isolation.
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公开(公告)号：US10204956B2
公开(公告)日：2019-02-12
申请号：US16003161
申请日：2018-06-08
发明人： Chia-Yu Wei , Chin-Hsun Hsiao , Yi-Hsing Chu , Yen-Liang Lin , Yung-Lung Hsu , Hsin-Chi Chen
IPC分类号： H01L27/146
摘要： A semiconductor structure includes a semiconductive substrate includes a first side and a second side opposite to the first side, a radiation sensing device disposed in the semiconductive substrate, an interlayer dielectric (ILD) disposed over the first side of the semiconductive substrate, and a conductive pad disposed in the semiconductive substrate and the ILD, wherein a thickness of the conductive pad is less than a sum of a thickness of the semiconductive substrate and a thickness of the ILD.
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公开(公告)号：US10177189B2
公开(公告)日：2019-01-08
申请号：US15649529
申请日：2017-07-13
发明人： Chia-Yu Wei , Chin-Hsun Hsiao , Yi-Hsing Chu , Yen-Liang Lin , Yung-Lung Hsu , Hsin-Chi Chen
IPC分类号： H01L23/48 , H01L27/146
摘要： A method of manufacturing a semiconductor structure includes receiving a substrate and an interlayer dielectric (ILD) over the substrate; bonding the substrate and the ILD over a carrier substrate; forming a recessed portion extended through the substrate and the ILD; disposing a conductive material into the recessed portion; and removing the carrier substrate, wherein the conductive material is in contact with the ILD and is separated from the substrate.
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公开(公告)号：US20240063234A1
公开(公告)日：2024-02-22
申请号：US18500357
申请日：2023-11-02
发明人： Chia-Yu Wei , Hsin-Chi Chen , Kuo-Cheng Lee , Ping-Hao Lin , Hsun-Ying Huang , Yen-Liang Lin , Yu Ting Kao
IPC分类号： H01L27/146
CPC分类号： H01L27/14607 , H01L27/1461 , H01L27/14612 , H01L27/14621 , H01L27/1463 , H01L27/14636 , H01L27/14641 , H01L27/14689 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14647 , H01L27/14687 , H01L27/14638 , H01L29/7827
摘要： The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a substrate and a transfer gate disposed from a front-side surface of the substrate. The CMOS image sensor further comprises a photo detecting column disposed at one side of the transfer gate within the substrate. The photo detecting column comprises a doped sensing layer comprising one or more recessed portions along a circumference of the doped sensing layer in parallel to the front-side surface of the substrate. By forming the photo detecting column with recessed portions, a junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.
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公开(公告)号：US09748301B2
公开(公告)日：2017-08-29
申请号：US14642344
申请日：2015-03-09
发明人： Chia-Yu Wei , Chin-Hsun Hsiao , Yi-Hsing Chu , Yen-Liang Lin , Yung-Lung Hsu , Hsin-Chi Chen
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14636 , H01L27/14685 , H01L27/14687
摘要： A semiconductor structure includes a semiconductive substrate includes a first side and a second side opposite to the first side, a radiation sensing device disposed in the semiconductive substrate, an interlayer dielectric (ILD) disposed over the first side of the semiconductive substrate, and a conductive pad passing through the ILD, disposed in the semiconductive substrate and configured to couple with an interconnect structure disposed over the ILD, wherein a portion of the conductive pad is surrounded by the semiconductive substrate, and a step height is configured by a surface of the portion of the conductive pad and the second side of the semiconductive substrate.
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