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公开(公告)号：US12081866B2
公开(公告)日：2024-09-03
申请号：US18327825
申请日：2023-06-01
Inventor： Yun-Wei Cheng , Chun-Hao Chou , Hsin-Chi Chen , Kuo-Cheng Lee , Hsun-Ying Huang
IPC: H04N5/232 , H01L27/146 , H04N23/10 , H04N23/67 , H04N25/13 , H04N25/133 , H04N25/702 , H04N25/704 , H04N5/369
CPC classification number: H04N23/67 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14689 , H04N23/10 , H04N25/133 , H04N25/134 , H04N25/702 , H04N25/704
Abstract: An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.
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公开(公告)号：US20240063234A1
公开(公告)日：2024-02-22
申请号：US18500357
申请日：2023-11-02
Inventor： Chia-Yu Wei , Hsin-Chi Chen , Kuo-Cheng Lee , Ping-Hao Lin , Hsun-Ying Huang , Yen-Liang Lin , Yu Ting Kao
IPC: H01L27/146
CPC classification number: H01L27/14607 , H01L27/1461 , H01L27/14612 , H01L27/14621 , H01L27/1463 , H01L27/14636 , H01L27/14641 , H01L27/14689 , H01L27/14627 , H01L27/1464 , H01L27/14645 , H01L27/14647 , H01L27/14687 , H01L27/14638 , H01L29/7827
Abstract: The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a substrate and a transfer gate disposed from a front-side surface of the substrate. The CMOS image sensor further comprises a photo detecting column disposed at one side of the transfer gate within the substrate. The photo detecting column comprises a doped sensing layer comprising one or more recessed portions along a circumference of the doped sensing layer in parallel to the front-side surface of the substrate. By forming the photo detecting column with recessed portions, a junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.
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公开(公告)号：US11756913B2
公开(公告)日：2023-09-12
申请号：US17841213
申请日：2022-06-15
Inventor： Hsin-Chi Chen , Hsun-Ying Huang , Chih-Ming Lee , Shang-Yen Wu , Chih-An Yang , Hung-Wei Ho , Chao-Ching Chang , Tsung-Wei Huang
IPC: H01L21/00 , H01L23/00 , H01L21/768 , H01L23/488
CPC classification number: H01L24/14 , H01L21/76802 , H01L21/76877 , H01L23/488 , H01L2224/0401 , H01L2224/13
Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a substrate having one or more devices formed thereon, one or more bonding pads disposed over the substrate, and a first passivation layer disposed over the one or more bonding pads. The first passivation layer includes a first passivation sublayer having a first dielectric material, a second passivation sublayer disposed over the first passivation sublayer, and the second passivation sublayer has a second dielectric material different from the first dielectric material. The first passivation layer further includes a third passivation sublayer disposed over the second passivation sublayer, and the third passivation sublayer has a third dielectric material different from the second dielectric material. At least two of the first, second, and third passivation sublayers each includes a nitride.
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公开(公告)号：US11706525B2
公开(公告)日：2023-07-18
申请号：US17493752
申请日：2021-10-04
Inventor： Yun-Wei Cheng , Chun-Hao Chou , Hsin-Chi Chen , Kuo-Cheng Lee , Hsun-Ying Huang
IPC: H04N5/232 , H04N23/67 , H01L27/146 , H04N23/10 , H04N25/133 , H04N25/13 , H04N25/702 , H04N25/704 , H04N5/369
CPC classification number: H04N23/67 , H01L27/1463 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14689 , H04N23/10 , H04N25/133 , H04N25/134 , H04N25/702 , H04N25/704
Abstract: An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.
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公开(公告)号：US09123616B2
公开(公告)日：2015-09-01
申请号：US14323676
申请日：2014-07-03
Inventor： Shou-Shu Lu , Hsun-Ying Huang , Hsin-Jung Huang , Chun-Mao Chiu , Chia-Chi Hsiao , Yung-Cheng Chang
IPC: H01L27/146
CPC classification number: H01L27/14687 , H01L27/14618 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L31/028 , H01L2924/0002 , H01L2924/00
Abstract: A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material.
Abstract translation: 公开了制造半导体图像传感器装置的方法。 在衬底中形成多个辐射感测区域。 辐射感测区域形成在图像传感器装置的非划线区域中。 通过蚀刻划线区域中的基板，在图像传感器装置的划线区域中形成开口。 在蚀刻之后，衬底的一部分保留在划线区域中。 然后将开口用有机材料填充。
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Patent Agency Ranking
公开(公告)号：US11843007B2
公开(公告)日：2023-12-12
申请号：US17528542
申请日：2021-11-17
Inventor： Chia-Yu Wei , Hsin-Chi Chen , Kuo-Cheng Lee , Ping-Hao Lin , Hsun-Ying Huang , Yen-Liang Lin , Yu Ting Kao
IPC: H01L27/146 , H01L29/78
CPC classification number: H01L27/14607 , H01L27/1461 , H01L27/1463 , H01L27/14612 , H01L27/14621 , H01L27/14636 , H01L27/14641 , H01L27/14689 , H01L27/1464 , H01L27/14627 , H01L27/14638 , H01L27/14645 , H01L27/14647 , H01L27/14687 , H01L29/7827
Abstract: The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a substrate and a transfer gate disposed from a front-side surface of the substrate. The CMOS image sensor further comprises a photo detecting column disposed at one side of the transfer gate within the substrate. The photo detecting column comprises a doped sensing layer comprising one or more recessed portions along a circumference of the doped sensing layer in parallel to the front-side surface of the substrate. By forming the photo detecting column with recessed portions, a junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.
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公开(公告)号：US11610901B2
公开(公告)日：2023-03-21
申请号：US17111074
申请日：2020-12-03
Inventor： You Che Chuang , Chih-Ming Lee , Hsin-Chi Chen , Hsun-Ying Huang
Abstract: A semiconductor structure includes a first transistor comprising a first gate structure over a first active region in a substrate. The semiconductor structure further includes a second active region in the substrate. The semiconductor structure further includes a first butted contact. The butted contact includes a first portion extending in a first direction and overlapping the second active region, and a second portion extending from the first portion in a second direction, different from the first direction, wherein the second portion directly contacts the first gate structure.
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8.发明申请公开(公告)号：US20210351134A1
公开(公告)日：2021-11-11
申请号：US17382570
申请日：2021-07-22
Inventor： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Hsun-Ying Huang
IPC: H01L23/538 , H01L23/48 , H01L23/522 , H01L21/768 , H01L23/00 , H01L21/683 , H01L23/31 , H01L23/528
Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a first plurality of interconnects within a first inter-level dielectric (ILD) structure disposed along a first side of a first substrate. A conductive pad is arranged along a second side of the first substrate. A first through-substrate-via (TSV) physically contacts an interconnect of the first plurality of interconnects and a first surface of the conductive pad. A second plurality of interconnects are within a second ILD structure disposed on a second substrate. A second TSV extends from an interconnect of the second plurality of interconnects to through the second substrate. A conductive bump is arranged on a second surface of the conductive pad opposing the first surface. The second TSV has a greater width than the first TSV.
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公开(公告)号：US20140322857A1
公开(公告)日：2014-10-30
申请号：US14323676
申请日：2014-07-03
Inventor： Shou-Shu Lu , Hsun-Ying Huang , Huang-Hsin Jung , Chun-Mao Chiu , Chia-Chi Hsiao , Yung-Cheng Chang
IPC: H01L27/146
CPC classification number: H01L27/14687 , H01L27/14618 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L31/028 , H01L2924/0002 , H01L2924/00
Abstract: A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material.
Abstract translation: 公开了制造半导体图像传感器装置的方法。 在衬底中形成多个辐射感测区域。 辐射感测区域形成在图像传感器装置的非划线区域中。 通过蚀刻划线区域中的基板，在图像传感器装置的划线区域中形成开口。 在蚀刻之后，衬底的一部分保留在划线区域中。 然后将开口用有机材料填充。
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公开(公告)号：US20140197513A1
公开(公告)日：2014-07-17
申请号：US14225509
申请日：2014-03-26
Inventor： Wei-Chih Weng , Hsun-Ying Huang , Yung-Cheng Chang , Jin-Hong Cho
IPC: H01L27/146
CPC classification number: H01L27/14623 , H01L27/1462 , H01L27/14636 , H01L27/1464 , H01L27/14685
Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon nitride. The image sensor device includes a metal shield formed on the compressively-stressed layer. The metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a second compressively-stressed layer formed on the metal shield and the first compressively-stressed layer. The second compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the second compressively-stressed layer.
Abstract translation: 提供了一种半导体图像传感器装置。 图像传感器装置包括具有阵列区域和黑色电平校正区域的半导体衬底。 阵列区域包含多个辐射敏感像素。 黑色电平校正区域包含一个或多个参考像素。 基板具有前侧和后侧。 图像传感器装置包括形成在基板的背面上的第一压缩应力层。 第一压应力层含有氮化硅。 图像传感器装置包括形成在压缩应力层上的金属屏蔽。 金属屏蔽形成在黑色电平校正区域的至少一部分上。 图像传感器装置包括形成在金属屏蔽和第一压缩应力层上的第二压缩应力层。 第二压应力层含有氧化硅。 金属屏蔽的侧壁由第二压应力层保护。
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