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公开(公告)号：US20140322857A1
公开(公告)日：2014-10-30
申请号：US14323676
申请日：2014-07-03
Inventor： Shou-Shu Lu , Hsun-Ying Huang , Huang-Hsin Jung , Chun-Mao Chiu , Chia-Chi Hsiao , Yung-Cheng Chang
IPC: H01L27/146
CPC classification number: H01L27/14687 , H01L27/14618 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L31/028 , H01L2924/0002 , H01L2924/00
Abstract: A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material.
Abstract translation: 公开了制造半导体图像传感器装置的方法。 在衬底中形成多个辐射感测区域。 辐射感测区域形成在图像传感器装置的非划线区域中。 通过蚀刻划线区域中的基板，在图像传感器装置的划线区域中形成开口。 在蚀刻之后，衬底的一部分保留在划线区域中。 然后将开口用有机材料填充。
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公开(公告)号：US20140197513A1
公开(公告)日：2014-07-17
申请号：US14225509
申请日：2014-03-26
Inventor： Wei-Chih Weng , Hsun-Ying Huang , Yung-Cheng Chang , Jin-Hong Cho
IPC: H01L27/146
CPC classification number: H01L27/14623 , H01L27/1462 , H01L27/14636 , H01L27/1464 , H01L27/14685
Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon nitride. The image sensor device includes a metal shield formed on the compressively-stressed layer. The metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a second compressively-stressed layer formed on the metal shield and the first compressively-stressed layer. The second compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the second compressively-stressed layer.
Abstract translation: 提供了一种半导体图像传感器装置。 图像传感器装置包括具有阵列区域和黑色电平校正区域的半导体衬底。 阵列区域包含多个辐射敏感像素。 黑色电平校正区域包含一个或多个参考像素。 基板具有前侧和后侧。 图像传感器装置包括形成在基板的背面上的第一压缩应力层。 第一压应力层含有氮化硅。 图像传感器装置包括形成在压缩应力层上的金属屏蔽。 金属屏蔽形成在黑色电平校正区域的至少一部分上。 图像传感器装置包括形成在金属屏蔽和第一压缩应力层上的第二压缩应力层。 第二压应力层含有氧化硅。 金属屏蔽的侧壁由第二压应力层保护。
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公开(公告)号：US08748952B2
公开(公告)日：2014-06-10
申请号：US13891993
申请日：2013-05-10
Inventor： Cheng-Tsung Chen , Hsun-Ying Huang , Yung-Cheng Chang , Yung-Fu Yeh , Yu-Ping Chen , Chi-Yuan Liang , Shou Shu Lu , Juan-Lin Chen , Jia-Ren Chen , Horng-Daw Shen , Chi-Hsun Hsieh
IPC: H01L27/146
CPC classification number: H01L31/02325 , H01L27/1461 , H01L27/1463 , H01L27/1464 , H01L27/14689 , H01L31/0248
Abstract: A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.
Abstract translation: 公开了一种用于图像感测的系统和方法。 实施例包括具有像素区域的基板，该基板具有正面和背面。 沿着基板的背面与沿着基板的前侧定位的感光元件相对地进行共注入工艺。 共同植入工艺利用产生前非晶化区域的第一预非晶化植入工艺。 然后注入掺杂剂，其中预非晶化区域延迟或减少掺杂剂进入感光区域的扩散或拖尾。 还可以在共植入区域上形成抗反射层，滤色器和微透镜。
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公开(公告)号：US20130249037A1
公开(公告)日：2013-09-26
申请号：US13891993
申请日：2013-05-10
Inventor： Cheng-Tsung Chen , Hsun-Ying Huang , Yung-Cheng Chang , Yung-Fu Yeh , Yu-Ping Chen , Chi-Yuan Liang , Shou Shu Lu , Juan-Lin Chen , Jia-Ren Chen , Horng-Daw Shen , Chi-Hsun Hsieh
IPC: H01L31/0248 , H01L31/0232
CPC classification number: H01L31/02325 , H01L27/1461 , H01L27/1463 , H01L27/1464 , H01L27/14689 , H01L31/0248
Abstract: A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.
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公开(公告)号：US20150349009A1
公开(公告)日：2015-12-03
申请号：US14822051
申请日：2015-08-10
Inventor： Shou-Shu Lu , Hsun-Ying Huang , Hsin-Jung Huang , Chun-Mao Chiu , Chia-Chi Hsiao , Yung-Cheng Chang
IPC: H01L27/146 , H01L31/028
CPC classification number: H01L27/14687 , H01L27/14618 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L31/028 , H01L2924/0002 , H01L2924/00
Abstract: A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material.
Abstract translation: 公开了制造半导体图像传感器装置的方法。 在衬底中形成多个辐射感测区域。 辐射感测区域形成在图像传感器装置的非划线区域中。 通过蚀刻划线区域中的基板，在图像传感器装置的划线区域中形成开口。 在蚀刻之后，衬底的一部分保留在划线区域中。 然后将开口用有机材料填充。
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Patent Agency Ranking
6.发明授权公开(公告)号：US09142709B2
公开(公告)日：2015-09-22
申请号：US14463151
申请日：2014-08-19
Inventor： Shou-Shu Lu , Hsun-Ying Huang , I-Chang Lin , Chia-Chi Hsiao , Yung-Cheng Chang
IPC: H01L21/22 , H01L27/146 , H01L31/18 , H01L21/66
CPC classification number: H01L31/1864 , H01L22/12 , H01L22/20 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L27/14698
Abstract: A method includes providing a substrate having a first surface and a second surface, the first surface being opposite the second surface, forming a light sensing region at the first surface of the substrate, forming a doped layer at the second surface of the substrate using a laser annealing process, and performing a chemical mechanical polishing process on the annealed, doped layer.
Abstract translation: 一种方法包括提供具有第一表面和第二表面的基底，所述第一表面与所述第二表面相对，在所述基底的第一表面处形成光感应区域，在所述基底的第二表面上形成掺杂层，使用 激光退火工艺，以及对退火的掺杂层进行化学机械抛光工艺。
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公开(公告)号：US09543355B2
公开(公告)日：2017-01-10
申请号：US14822051
申请日：2015-08-10
Inventor： Shou-Shu Lu , Hsun-Ying Huang , Hsin-Jung Huang , Chun-Mao Chiu , Chia-Chi Hsiao , Yung-Cheng Chang
IPC: H01L27/146 , H01L31/028
CPC classification number: H01L27/14687 , H01L27/14618 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L31/028 , H01L2924/0002 , H01L2924/00
Abstract: A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material.
Abstract translation: 公开了制造半导体图像传感器装置的方法。 在衬底中形成多个辐射感测区域。 辐射感测区域形成在图像传感器装置的非划线区域中。 通过蚀刻划线区域中的基板，在图像传感器装置的划线区域中形成开口。 在蚀刻之后，衬底的一部分保留在划线区域中。 然后将开口用有机材料填充。
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公开(公告)号：US08980674B2
公开(公告)日：2015-03-17
申请号：US14225509
申请日：2014-03-26
Inventor： Wei-Chih Weng , Hsun-Ying Huang , Yung-Cheng Chang , Jin-Hong Cho
IPC: H01L21/00 , H01L31/102
CPC classification number: H01L27/14623 , H01L27/1462 , H01L27/14636 , H01L27/1464 , H01L27/14685
Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon nitride. The image sensor device includes a metal shield formed on the compressively-stressed layer. The metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a second compressively-stressed layer formed on the metal shield and the first compressively-stressed layer. The second compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the second compressively-stressed layer.
Abstract translation: 提供了一种半导体图像传感器装置。 图像传感器装置包括具有阵列区域和黑色电平校正区域的半导体衬底。 阵列区域包含多个辐射敏感像素。 黑色电平校正区域包含一个或多个参考像素。 基板具有前侧和后侧。 图像传感器装置包括形成在基板的背面上的第一压缩应力层。 第一压应力层含有氮化硅。 图像传感器装置包括形成在压缩应力层上的金属屏蔽。 金属屏蔽形成在黑色电平校正区域的至少一部分上。 图像传感器装置包括形成在金属屏蔽和第一压缩应力层上的第二压缩应力层。 第二压应力层含有氧化硅。 金属屏蔽的侧壁由第二压应力层保护。
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9.发明申请公开(公告)号：US20140357010A1
公开(公告)日：2014-12-04
申请号：US14463151
申请日：2014-08-19
Inventor： Shou-Shu Lu , Hsun-Ying Huang , I-Chang Lin , Chia-Chi Hsiao , Yung-Cheng Chang
IPC: H01L31/18 , H01L27/146
CPC classification number: H01L31/1864 , H01L22/12 , H01L22/20 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L27/14698
Abstract: A method includes providing a substrate having a first surface and a second surface, the first surface being opposite the second surface, forming a light sensing region at the first surface of the substrate, forming a doped layer at the second surface of the substrate using a laser annealing process, and performing a chemical mechanical polishing process on the annealed, doped layer.
Abstract translation: 一种方法包括提供具有第一表面和第二表面的基底，所述第一表面与所述第二表面相对，在所述基底的第一表面处形成光感应区域，在所述基底的第二表面上形成掺杂层，使用 激光退火工艺，以及对退火的掺杂层进行化学机械抛光工艺。
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公开(公告)号：US09123616B2
公开(公告)日：2015-09-01
申请号：US14323676
申请日：2014-07-03
Inventor： Shou-Shu Lu , Hsun-Ying Huang , Hsin-Jung Huang , Chun-Mao Chiu , Chia-Chi Hsiao , Yung-Cheng Chang
IPC: H01L27/146
CPC classification number: H01L27/14687 , H01L27/14618 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L31/028 , H01L2924/0002 , H01L2924/00
Abstract: A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material.
Abstract translation: 公开了制造半导体图像传感器装置的方法。 在衬底中形成多个辐射感测区域。 辐射感测区域形成在图像传感器装置的非划线区域中。 通过蚀刻划线区域中的基板，在图像传感器装置的划线区域中形成开口。 在蚀刻之后，衬底的一部分保留在划线区域中。 然后将开口用有机材料填充。
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