公开(公告)号：US09176014B2

公开(公告)日：2015-11-03

申请号：US13927886

申请日：2013-06-26

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Michiko Hara ,  Yoshihiro Higashi ,  Akio Hori ,  Tomohiko Nagata ,  Shiori Kaji ,  Akiko Yuzawa

IPC: G01L7/00 ,  G01L7/08 ,  G01L9/00 ,  G01L1/12 ,  G01L9/16 ,  H04R1/00

CPC classification number: G01L1/12 ,  G01L9/0044 ,  G01L9/0048 ,  G01L9/16 ,  H04R1/00 ,  H04R15/00 ,  H04R2410/00

Abstract: According to one embodiment, a pressure sensor includes a substrate, a first electrode, a second electrode, a first magnetic layer, a second magnetic, a spacer layer, a third magnetic layer. The substrate includes a first region and a second region. The first electrode is provided on the first region. The second electrode is provided on the first electrode. The first magnetic layer is provided between the first electrode and the second electrode. The second magnetic layer is provided between the first electrode and the first magnetic layer or between the first magnetic layer and the second electrode. The spacer layer is provided between the first magnetic layer and the second magnetic layer in a stacking direction of layers from the first electrode to the second electrode. The third magnetic layer is provided continuously with the second magnetic layer on the second region.

Abstract translation: 根据一个实施例，压力传感器包括基板，第一电极，第二电极，第一磁性层，第二磁性体，间隔层，第三磁性层。 衬底包括第一区域和第二区域。 第一电极设置在第一区域上。 第二电极设置在第一电极上。 第一磁性层设置在第一电极和第二电极之间。 第二磁性层设置在第一电极和第一磁性层之间或第一磁性层和第二电极之间。 间隔层在从第一电极到第二电极的层的堆叠方向上设置在第一磁性层和第二磁性层之间。 第三磁性层与第二区域上的第二磁性层连续地提供。

公开(公告)号：US20150266717A1

公开(公告)日：2015-09-24

申请号：US14584625

申请日：2014-12-29

Applicant: Kabushiki Kaisha Toshiba

Inventor： Kazuaki OKAMOTO ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Akiko Yuzawa ,  Akio Hori ,  Kei Masunishi

IPC: B81B3/00

CPC classification number: B81B3/0051 ,  B81B3/0091 ,  B81B2201/0257 ,  B81B2201/0264 ,  G01L1/12 ,  G01L9/16 ,  G01L17/00 ,  H01L41/12 ,  H01L41/125

Abstract: According to one embodiment, a pressure sensor includes: a support section; a film section; and a strain sensing element. The film section is supported by the support section and deformable. The film section includes a first film and a second film. The first film includes a first region located in a central part and a second region located in a peripheral part around the first region. The second film is provided on the first region. The strain sensing element is provided on part of the second region. The strain sensing element includes a first magnetic layer; a second magnetic layer; and an intermediate layer. Magnetization of the first magnetic layer changes in response to deformation of the second region. The intermediate layer is provided between the first magnetic layer and the second magnetic layer.

Abstract translation: 根据一个实施例，压力传感器包括：支撑部分; 电影部分 和应变传感元件。 薄膜部分由支撑部分支撑并且可变形。 薄膜部分包括第一薄膜和第二薄膜。 第一膜包括位于中心部分的第一区域和位于围绕第一区域的周边部分中的第二区域。 在第一区域设置第二胶片。 应变传感元件设置在第二区域的一部分上。 应变传感元件包括第一磁性层; 第二磁性层; 和中间层。 响应于第二区域的变形，第一磁性层的磁化改变。 中间层设置在第一磁性层和第二磁性层之间。

公开(公告)号：US09142759B2

公开(公告)日：2015-09-22

申请号：US14310152

申请日：2014-06-20

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hirofumi Morise ,  Hideaki Fukuzawa ,  Akira Kikitsu ,  Yoshiaki Fukuzumi

IPC: G11C11/15 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22 ,  H01L41/09 ,  H01L41/12 ,  H01L43/10 ,  H01F10/32

CPC classification number: H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  H01F10/3236 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L27/228 ,  H01L41/0986 ,  H01L41/12 ,  H01L43/10

Abstract: A magnetic memory device comprises a first electrode, a second electrode, a laminated structure comprising plural first magnetic layers being provided between the first electrode and the second electrode, a second magnetic layer comprising different composition elements from that of the first magnetic layer and being provided between plural first magnetic layers, a piezoelectric body provided on a opposite side to a side where the first electrode is provided in the laminated structure, and a third electrode applying voltage to the piezoelectric body and provided on a different position from a position where the first electrode is provided in the piezoelectric body.

Abstract translation: 磁存储器件包括第一电极，第二电极，层叠结构，其包括设置在第一电极和第二电极之间的多个第一磁性层，第二磁性层包括与第一磁性层不同的组成元素， 在多个第一磁性层之间，在层压结构中设置在与设置有第一电极的一侧相反的一侧的压电体，以及将第三电极向压电体施加电压，并且设置在与第一电极的位置不同的位置， 电极设置在压电体中。

公开(公告)号：US20150185296A1

公开(公告)日：2015-07-02

申请号：US14659762

申请日：2015-03-17

Applicant: Kabushiki Kaisha Toshiba

Inventor： Devin GIDDINGS ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Michiko Hara ,  Hiromi Yuasa

IPC: G01R33/09 ,  G11B5/39

CPC classification number: G01R33/091 ,  A61B5/02108 ,  A61B5/022 ,  A61B2562/0247 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/399 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3259 ,  H01L43/08

Abstract: According to one embodiment, a magneto-resistive effect device, includes a stacked body stacked on a substrate, a pair of first electrodes that feeds current to the stacked body, a strain introduction member, and a second electrode for applying a voltage to the strain introduction member. The stacked body includes a first magnetic layer that includes one or more metals selected from the group consisting of iron, cobalt, and nickel, a second magnetic layer stacked on the first magnetic layer, having a composition that is different from the first magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer.

Abstract translation: 根据一个实施例，磁阻效应装置包括堆叠在基板上的堆叠体，将一个电流馈送到堆叠体的一对第一电极，应变引入部件和用于向该应变施加电压的第二电极 介绍会员。 层叠体包括：第一磁性层，其包含选自铁，钴和镍的一种或多种金属，堆叠在第一磁性层上的具有与第一磁性层不同的组成的第二磁性层， 以及设置在第一磁性层和第二磁性层之间的间隔层。

公开(公告)号：US20140207006A1

公开(公告)日：2014-07-24

申请号：US14219860

申请日：2014-03-19

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Alexander Devin GIDDINGS ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

IPC: G01L1/12 ,  A61B5/021

CPC classification number: A61B5/021 ,  A61B5/02108 ,  G01B7/24 ,  G01L1/125

Abstract: A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.

Abstract translation: 应变传感器元件包括具有无磁性层，间隔层和磁性参考层的层压膜。 自由层具有可变的磁化方向和面外磁化方向。 参考层具有可变的磁化方向，该自由层的磁化强度比自由层的磁化强。 间隔层设置在自由层和参考层之间。 一对电极设置有层叠膜的平面。 基板设置有对电极中的任一个并且可以变形。 当衬底失真时，自由层的磁化的旋转角度与参考层的磁化的旋转角度不同。 电阻根据自由层和参考层之间的磁化角度而改变，这允许元件作为应变传感器工作。

公开(公告)号：US20140137658A1

公开(公告)日：2014-05-22

申请号：US14045153

申请日：2013-10-03

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yoshihiro HIGASHI ,  Yoshihiko Fuji ,  Michiko Hara ,  Akiko Yuzawa ,  Shiori Kaji ,  Tomohiko Nagata ,  Akio Hori ,  Hideaki Fukuzawa

IPC: G01L1/12

CPC classification number: H04R19/04 ,  H04R1/04 ,  H04R7/10

Abstract: According to one embodiment, a microphone package includes: a pressure sensing element including a film and a device; and a cover. The film generates strain in response to pressure. The device includes: a first electrode; a second electrode; and a first magnetic layer. The first magnetic layer is provided between the first electrode and the second electrode and has a first magnetization. The cover includes: an upper portion; and a side portion. The side portion is magnetic and provided depending on the first magnetization and the second magnetization.

Abstract translation: 根据一个实施例，麦克风封装包括：压力感测元件，包括薄膜和装置; 和封面。 该膜响应于压力而产生应变。 该装置包括：第一电极; 第二电极; 和第一磁性层。 第一磁性层设置在第一电极和第二电极之间并且具有第一磁化。 盖子包括：上部; 和侧部。 侧部是磁性的并根据第一磁化和第二磁化而提供。

公开(公告)号：US08542466B2

公开(公告)日：2013-09-24

申请号：US13740983

申请日：2013-01-14

Applicant: Kabushiki Kaisha Toshiba ,  TDK Corporation

Inventor： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

IPC: G11B5/39

CPC classification number: G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/08 ,  Y10S977/943

Abstract: A magneto-resistance effect element, including a fixed magnetization layer of which a magnetization is substantially fixed in one direction, a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer, a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof, a thin film layer, and a functional layer.

Abstract translation: 一种磁电阻效应元件，包括其磁化方向基本上固定在一个方向上的固定磁化层，其自由磁化层根据外部磁场旋转，并且与磁固定磁化层相反形成 包括具有绝缘层的电流限制层和使电流在厚度方向上通过绝缘层的导体的间隔层，薄膜层和功能层。

公开(公告)号：US10477323B2

公开(公告)日：2019-11-12

申请号：US16053832

申请日：2018-08-03

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yoshihiro Higashi ,  Yoshihiko Fuji ,  Michiko Hara ,  Akiko Yuzawa ,  Shiori Kaji ,  Tomohiko Nagata ,  Akio Hori ,  Hideaki Fukuzawa

IPC: H04R25/00 ,  H04R19/04 ,  H04R7/10 ,  H04R1/04

Abstract: According to one embodiment, a microphone package includes: a pressure sensing element including a film and a device; and a cover. The film generates strain in response to pressure. The device includes: a first electrode; a second electrode; and a first magnetic layer. The first magnetic layer is provided between the first electrode and the second electrode and has a first magnetization. The cover includes: an upper portion; and a side portion. The side portion is magnetic and provided depending on the first magnetization and the second magnetization.

公开(公告)号：US20190128752A1

公开(公告)日：2019-05-02

申请号：US16234123

申请日：2018-12-27

Applicant: Kabushiki Kaisha Toshiba

Inventor： Shiori KAJI ,  Hideaki Fukuzawa ,  Yoshihiko Fuji

IPC: G01L1/12 ,  G01L9/16

CPC classification number: G01L1/12 ,  G01L9/16

Abstract: The disclosure relates to a strain sensing element provided on a deformable substrate. The strain sensing element includes: a first magnetic layer; a second magnetic layer; and an intermediate layer. The second magnetic layer includes Fe1-yBy (0

公开(公告)号：US10254315B2

公开(公告)日：2019-04-09

申请号：US14580984

申请日：2014-12-23

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoshihiro Higashi ,  Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Tetsuro Wamura ,  Motomichi Shibano

IPC: G01R19/00 ,  G01R33/09 ,  G01R15/09 ,  G01R15/20

Abstract: A current sensor comprises: a plurality of magnetoresistance elements whose resistance value changes by application of an current-induced magnetic field from a current-to-be-measured; and a selection circuit that selects one magnetoresistance element from these plurality of magnetoresistance elements and outputs a signal of a selected magnetoresistance element. In the plurality of magnetoresistance elements, relationships between a magnitude of the applied current-induced magnetic field and the resistance value are different from each other.