公开(公告)号：US11788914B2

公开(公告)日：2023-10-17

申请号：US18109357

申请日：2023-02-14

申请人： Langfang Zhichi Power Technology Ltd. ,  Beihang University

发明人： Tiantong Xu ,  Haiwang Li ,  Zhi Tao ,  Xiaoda Cao ,  Yanxin Zhai ,  Chunhui Yang ,  Haonan Lu ,  Di An ,  Hengyi Wang ,  Zhiyang Wang ,  Kaiyun Zhu ,  Weidong Fang ,  Wenbin Wang ,  Kaibo Lei ,  Wensong Xiao ,  Murun Li ,  Xiao Zhang ,  Yang Feng

IPC分类号： G01L9/00 ,  G01L9/12

CPC分类号： G01L9/12 ,  G01L9/0048

摘要： Provided are a pressure difference sensor, and a manufacturing method and an application thereof. A manner of bonding three layers of wafers is adopted, and the sensor includes an upper structure, an intermediate structure and a lower structure. Each of the upper structure and the intermediate structure is manufactured by a silicon-on-insulator (SOI) wafer, the lower structure is manufactured by patterned doped intrinsic silicon; and a lead pad of each of the upper electrode, and the intermediate electrode and the lower electrode is located on a corresponding one of three-stepped steps at a side of the pressure difference sensor. Annular through holes are formed around the upper electrode and the lower electrode. A constant capacitance of a capacitance signal outputted by an upper capacitor of the sensor by extending an electric field line path of the constant capacitor part.

公开(公告)号：US20230304881A1

公开(公告)日：2023-09-28

申请号：US18044099

申请日：2021-10-06

申请人： Robert Bosch GmbH

发明人： Heribert Weber ,  Andreas Scheurle ,  Joachim Fritz ,  Peter Schmollngruber ,  Sophielouise Mach ,  Thomas Friedrich

IPC分类号： G01L9/00 ,  B81B3/00

CPC分类号： G01L9/0048 ,  B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0307

摘要： A micromechanical component. The micromechanical component includes: a membrane; the membrane includes at least one reinforcement structure of a geometrically defined shape, which reinforces the membrane in a defined manner, in the region of at least one anchor structure and/or in the region of at least one connecting structure.

公开(公告)号：US20180346319A1

公开(公告)日：2018-12-06

申请号：US16046787

申请日：2018-07-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： CHUN-WEN CHENG ,  CHIA-HUA CHU ,  FEI-LUNG LAI ,  SHIANG-CHI LIN

IPC分类号： B81B7/00 ,  B81C1/00 ,  G01L9/00 ,  G01N27/12

CPC分类号： B81B7/007 ,  B81B2201/0214 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/0015 ,  B81C1/00158 ,  B81C1/00182 ,  B81C1/00301 ,  B81C2203/035 ,  B81C2203/0792 ,  G01L9/0041 ,  G01L9/0042 ,  G01L9/0044 ,  G01L9/0045 ,  G01L9/0048 ,  G01N27/123

摘要： A method of manufacturing a semiconductor structure includes receiving a substrate, receiving a heater, receiving an electrode, and receiving a sensing material. The substrate have a first surface, a second surface opposite to the first surface and a plurality of vias extending from the second surface toward the first surface and filled with a conductive or semiconductive material and a first oxide layer, the first oxide layer surrounding the conductive or semiconductive material in the plurality of vias, and a second oxide layer disposed over the first surface and the second surface. The heater is disposed within a membrane over the first surface of the substrate and electrically connected with the substrate. The electrode is over the heater and the membrane; and the sensing material covers a portion of the electrode.

公开(公告)号：US20180179050A1

公开(公告)日：2018-06-28

申请号：US15904631

申请日：2018-02-26

申请人： NextInput, Inc.

发明人： Amnon Brosh ,  Ryan Diestelhorst ,  Steven Nasiri

IPC分类号： B81B3/00 ,  G01L1/18 ,  G01L1/20 ,  B81C1/00

CPC分类号： B81B3/0056 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81C1/00626 ,  G01L1/18 ,  G01L1/205 ,  G01L9/0047 ,  G01L9/0048

摘要： Described herein is a miniaturized and ruggedized wafer level MEMS force sensor composed of a base and a cap. The sensor employs multiple flexible membranes, a mechanical overload stop, a retaining wall, and piezoresistive strain gauges.

公开(公告)号：US20180044166A1

公开(公告)日：2018-02-15

申请号：US15556070

申请日：2016-03-04

申请人： Endress + Hauser GmbH + Co. KG

发明人： Rafael Teipen ,  Benjamin Lemke

IPC分类号： B81B3/00 ,  G01L9/00 ,  B81C1/00

CPC分类号： B81B3/0072 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/00531 ,  B81C2201/0132 ,  G01L9/0048 ,  G01L9/0073 ,  G01L13/025 ,  G01L19/0618

摘要： A MEMS sensor with improved overload resistance for metrological registering of a measured variable comprises a plurality of layers, especially silicon layers, arranged on one another. The layers include at least one inner layer, which is arranged between a first layer and a second layer, and in the inner layer there is provided extending perpendicularly to the plane of the inner layer through the inner layer at least one cavity, on which borders externally at least sectionally and forming a connecting element, a region of the inner layer, which is connected with the first layer and the second layer. A lateral surface of the connecting element externally at least sectionally bordering the cavity has in an end region facing the first layer a rounding decreasing the cross sectional area of the cavity in the direction of the first layer, and has in an end region facing the second layer a rounding decreasing the cross sectional area of the cavity in the direction of the second layer.

公开(公告)号：US09739680B2

公开(公告)日：2017-08-22

申请号：US15339182

申请日：2016-10-31

申请人： KULITE SEMICONDUCTOR PRODUCTS, INC.

发明人： Alexander A. Ned ,  Joseph R. VanDeWeert ,  Leo Geras

IPC分类号： G01L7/08 ,  G01L19/06 ,  G01L9/00 ,  G01L19/00

CPC分类号： G01L19/0681 ,  G01L9/0044 ,  G01L9/0047 ,  G01L9/0048 ,  G01L9/0054 ,  G01L19/0076 ,  G01L19/0627 ,  Y10T29/49826

摘要： This disclosure provides example methods, devices and systems associated with flat covered leadless pressure sensor assemblies suitable for operation in extreme environments. In one embodiment, a system may comprise a semiconductor substrate having a first side and a second side; a diaphragm disposed on the first side of the semiconductor substrate; a first cover coupled to the first side of the semiconductor substrate such that it overlays at least the diaphragm, wherein a pressure applied at the first cover is transferred to the diaphragm; and a sensing element disposed on the second side of the semiconductor substrate, wherein the sensing element is used to measure the pressure.

公开(公告)号：US20170089783A1

公开(公告)日：2017-03-30

申请号：US15373360

申请日：2016-12-08

申请人： Apple Inc.

发明人： Caleb C. Han ,  Tongbi Jiang ,  Jun Zhai

IPC分类号： G01L7/08 ,  B81C1/00 ,  B81B7/00

CPC分类号： G01L7/08 ,  B81B7/0048 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81B2207/094 ,  B81C1/0023 ,  B81C2203/0792 ,  G01L9/0045 ,  G01L9/0048 ,  G01L19/0618 ,  G01L19/146 ,  G01L19/148 ,  H01L41/094 ,  H01L41/1136 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/48095 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2924/1461 ,  H01L2924/16151 ,  H01L2924/16195

摘要： Sensor packages and manners of formation are described. In an embodiment, a sensor package includes a supporting die characterized by a recess area and a support anchor protruding above the recess area. A sensor die is bonded to the support anchor such that an air gap exists between the sensor die and the recess area. The sensor die includes a sensor positioned directly above the air gap.

公开(公告)号：US20170038269A1

公开(公告)日：2017-02-09

申请号：US15106898

申请日：2014-11-12

申请人： HITACHI AUTOMOTIVE SYSTEMS, LTD.

发明人： Masayuki HIO ,  Mizuki SHIBATA

IPC分类号： G01L9/00

CPC分类号： G01L9/0048 ,  G01L9/0051

摘要： Provided is a pressure measuring device that can stably bond a strain detection element even to a diaphragm made of metal having a large coefficient of thermal expansion. In order to achieve the above object, the pressure measuring device of the present invention includes: a metal housing including a pressure introduction unit and a diaphragm deformed by a pressure introduced via the pressure introduction unit; and a strain detection element for detecting strain generated in the diaphragm, wherein a base made of a first brittle material is provided on the metal housing, and the strain detection element is bonded to the base via a second brittle material having a melting point lower than a melting point of the base.

摘要翻译： 提供一种压力测量装置，其可以将应变检测元件甚至稳定地结合到具有大的热膨胀系数的金属制隔膜。 为了实现上述目的，本发明的压力测量装置包括：金属壳体，包括压力引入单元和通过压力引入单元引入的压力而变形的隔膜; 以及用于检测在所述隔膜中产生的应变的应变检测元件，其中，在所述金属壳体上设置由第一脆性材料制成的基底，并且所述应变检测元件经由熔点低于第二脆性材料的第二脆性材料接合到所述基底 碱的熔点。

公开(公告)号：US09470592B2

公开(公告)日：2016-10-18

申请号：US14354113

申请日：2012-10-24

申请人： AUXITROL S.A.

发明人： Sebastiano Brida

IPC分类号： G01L9/00 ,  G01L19/06 ,  B81B3/00

CPC分类号： G01L9/0047 ,  B81B3/0051 ,  B81B3/0097 ,  B81B2201/0264 ,  G01L9/0042 ,  G01L9/0048 ,  G01L19/0618

摘要： The invention relates to a micromechanical structure for measuring or detecting a mechanical quantity or a dynamic quantity, including a deformable membrane (20) and a supporting substrate (10), the membrane (20) including a first portion (20a) and a second portion (20b) surrounded by the first portion (20a), the second portion (20b) having a thickness that is less than the thickness of the first portion (20a), the membrane (20) being suspended above the supporting substrate (10) and thus defining a free space (30), said micromechanical structure comprising in addition a lower abutment (21) for limiting the deformations of the membrane (20), said lower abutment (21) being arranged above the supporting substrate (10) and extending into the free space (30) from said supporting substrate (10) toward the membrane (20), characterized in that the lower abutment (21) comprises islets (101-108) that extend into the free space (30) toward the membrane (20) from a flat surface of the lower abutment (21), the islets (101-108) forming a relief structure in such a manner that, in the case of contact between the islets (101-108) and the fine portion (20b) of the membrane (20), the contact surface between the islets (101-108) and the fine portion (20b) of the membrane (20) is small with respect to the dimensions of the fine portion (20b) of the membrane (20).

摘要翻译： 本发明涉及一种用于测量或检测包括可变形膜（20）和支撑衬底（10）的机械量或动态量的微机械结构，所述膜（20）包括第一部分（20a）和第二部分 （20b），由所述第一部分（20a）包围，所述第二部分（20b）的厚度小于所述第一部分（20a）的厚度，所述膜（20）悬挂在所述支撑基板（10）的上方，以及 从而限定自由空间（30），所述微机械结构另外包括用于限制膜（20）的变形的下支座（21），所述下支座（21）布置在支撑基板（10）的上方并延伸到 从所述支撑基底（10）到所述膜（20）的自由空间（30），其特征在于，所述下基台（21）包括朝向所述膜（20）延伸到所述自由空间（30）中的小岛（101-108） ）从下部邻接的平坦表面 （21），所述胰岛（101-108）以这样的方式形成浮雕结构，即在所述胰岛（101-108）和所述膜（20）的微细部分（20b）之间接触的情况下， 胰岛（101-108）与膜（20）的微细部分（20b）之间的接触表面相对于膜（20）的微细部分（20b）的尺寸较小。

公开(公告)号：US20160153856A1

公开(公告)日：2016-06-02

申请号：US14951996

申请日：2015-11-25

申请人： Seiko Epson Corporation

发明人： Kazuya HAYASHI

IPC分类号： G01L9/00 ,  H03H9/24 ,  G01C5/06

CPC分类号： G01L9/0054 ,  B81B3/007 ,  B81B7/0077 ,  B81C2203/0163 ,  G01C5/06 ,  G01L9/0019 ,  G01L9/0048

摘要： A physical quantity sensor includes a substrate, a piezoresistive element that is arranged on one face side of the substrate, a wall portion that is arranged to surround the piezoresistive element on the one face side of the substrate in a plan view of the substrate, a ceiling portion that is arranged on the opposite side of the wall portion from the substrate and constitutes a cavity portion with the wall portion, and an inside beam portion that is arranged on the substrate side of the ceiling portion and includes a material of which the thermal expansion rate is smaller than the thermal expansion rate of the ceiling portion.

摘要翻译： 物理量传感器包括衬底，布置在衬底的一个正面侧上的压阻元件，在衬底的平面图中布置成围绕衬底的一个正面侧的压阻元件的壁部， 天花板部分，其布置在与基板相对的壁部的相对侧上，并且构成具有壁部的空腔部分，以及布置在顶部的基板侧上的内梁部分，并且包括热的 膨胀率小于天花板部分的热膨胀率。