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公开(公告)号：US11788914B2
公开(公告)日：2023-10-17
申请号：US18109357
申请日：2023-02-14
发明人： Tiantong Xu , Haiwang Li , Zhi Tao , Xiaoda Cao , Yanxin Zhai , Chunhui Yang , Haonan Lu , Di An , Hengyi Wang , Zhiyang Wang , Kaiyun Zhu , Weidong Fang , Wenbin Wang , Kaibo Lei , Wensong Xiao , Murun Li , Xiao Zhang , Yang Feng
CPC分类号： G01L9/12 , G01L9/0048
摘要： Provided are a pressure difference sensor, and a manufacturing method and an application thereof. A manner of bonding three layers of wafers is adopted, and the sensor includes an upper structure, an intermediate structure and a lower structure. Each of the upper structure and the intermediate structure is manufactured by a silicon-on-insulator (SOI) wafer, the lower structure is manufactured by patterned doped intrinsic silicon; and a lead pad of each of the upper electrode, and the intermediate electrode and the lower electrode is located on a corresponding one of three-stepped steps at a side of the pressure difference sensor. Annular through holes are formed around the upper electrode and the lower electrode. A constant capacitance of a capacitance signal outputted by an upper capacitor of the sensor by extending an electric field line path of the constant capacitor part.
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2.发明公开公开(公告)号：US20230258521A1
公开(公告)日：2023-08-17
申请号：US18109357
申请日：2023-02-14
发明人： Tiantong Xu , Haiwang Li , Zhi Tao , Xiaoda Cao , Yanxin Zhai , Chunhui Yang , Haonan Lu , Di An , Zhiyang Wang , Hengyi Wang , Kaiyun Zhu , Weidong Fang , Wenbin Wang , Kaibo Lei , Wensong Xiao , Murun Li , Xiao Zhang , Yang Feng
CPC分类号： G01L9/12 , G01L9/0048
摘要： Provided are a pressure difference sensor, and a manufacturing method and an application thereof. A manner of bonding three layers of wafers is adopted, and the sensor includes an upper structure, an intermediate structure and a lower structure. Each of the upper structure and the intermediate structure is manufactured by a silicon-on-insulator (SOI) wafer, the lower structure is manufactured by patterned doped intrinsic silicon; and a lead pad of each of the upper electrode, and the intermediate electrode and the lower electrode is located on a corresponding one of three-stepped steps at a side of the pressure difference sensor. Annular through holes are formed around the upper electrode and the lower electrode. A constant capacitance of a capacitance signal outputted by an upper capacitor of the sensor by extending an electric field line path of the constant capacitor part.
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