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公开(公告)号：US10788386B2
公开(公告)日：2020-09-29
申请号：US16205836
申请日：2018-11-30
发明人： Alexander A. Ned , Scott Goodman
摘要： Header construction and techniques are disclosed that utilize header layers that provide support for electrical interconnections. A sensor header assembly includes: an upper header layer having upper through holes arranged in a first configuration; a lower header layer having lower through holes arranged in a second configuration axially offset relative to the first configuration; depressions extending from the lower header layer top surface and partially through the lower header layer, each depression defining a footprint corresponding to the first configuration of the corresponding upper through holes of the upper header layer; upper header pins extending through the corresponding upper through holes and at least partially into the corresponding lower level depressions; and lower header pins extending through the corresponding lower through holes and in electrical communication with the corresponding upper header pins. The depressions form support surfaces for supporting at least the corresponding upper header pins during high-pressure operation.
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公开(公告)号：US20200011757A1
公开(公告)日：2020-01-09
申请号：US16552172
申请日：2019-08-27
发明人： Alexander A. Ned , Leo Geras , Sorin Stefanescu
摘要： Systems and methods are disclosed for packaging sensors for use in high temperature environments. In one example implementation, a sensor device includes a header; one or more feedthrough pins extending through the header; and a sensor chip disposed on a support portion of the header. The sensor chip includes one or more contact pads. The sensor device further includes one or more wire bonded interconnections in electrical communication with the respective one or more contact pads and the respective one or more feedthrough pins. The sensor device includes a first sealed enclosure formed by at least a portion of the header. The first sealed enclosure is configured for enclosing and protecting at last the one or more wire bonded interconnections and the one or more contact pads from an external environment.
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公开(公告)号：US09791342B2
公开(公告)日：2017-10-17
申请号：US14729617
申请日：2015-06-03
CPC分类号： G01L19/0609 , G01L13/00 , G01L19/0627 , G01L19/0681 , G01L23/24 , G01M15/14
摘要： A pressure transducer assembly that uses static pressure compensation to capture low-level dynamic pressures in high temperature environments. In one embodiment, a method comprises receiving, at a first tube, a pressure, wherein the pressure includes a static pressure component and a dynamic pressure component; receiving, at a micro-filter, the pressure; filtering, by the micro-filter, at least a portion of the dynamic pressure component of the pressure; outputting, from the micro-filter, a filtered pressure; receiving, at a first surface of a first sensing element, the pressure; receiving, at a second surface of the first sensing element, the filtered pressure; measuring, by the first sensing element, a difference between the pressure and the filtered pressure, wherein the difference is associated with the dynamic pressure component of the pressure; and outputting, from the first sensing element, a first pressure signal associated with the dynamic pressure component of the pressure.
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4.发明授权公开(公告)号：US09739680B2
公开(公告)日：2017-08-22
申请号：US15339182
申请日：2016-10-31
CPC分类号： G01L19/0681 , G01L9/0044 , G01L9/0047 , G01L9/0048 , G01L9/0054 , G01L19/0076 , G01L19/0627 , Y10T29/49826
摘要： This disclosure provides example methods, devices and systems associated with flat covered leadless pressure sensor assemblies suitable for operation in extreme environments. In one embodiment, a system may comprise a semiconductor substrate having a first side and a second side; a diaphragm disposed on the first side of the semiconductor substrate; a first cover coupled to the first side of the semiconductor substrate such that it overlays at least the diaphragm, wherein a pressure applied at the first cover is transferred to the diaphragm; and a sensing element disposed on the second side of the semiconductor substrate, wherein the sensing element is used to measure the pressure.
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公开(公告)号：US09574960B2
公开(公告)日：2017-02-21
申请号：US14327411
申请日：2014-07-09
CPC分类号： G01L19/0038 , G01F1/46 , G01P5/16 , G01P5/165 , G01P13/025
摘要： This disclosure provides example methods, devices, and systems for an ultra-miniature, multi-hole flow angle probe. The construction, packaging of a multitude of absolute and or differential pressure transducers or sensors are invented for the purpose of providing highly accurate measurement of flow properties, flow angle in particular. The unique placement of sensors leads to further miniaturization relative to current state of the art. Further the use of closely coupled, differential transducer or transducers achieves higher accuracy measurement of small pressure variations coupled with large mean or average baseline pressures, as is demanded in modern aerodynamic or turbo-machinery devices. The use and installation of ultra-miniature sensors insider the device invented herein achieves higher frequency response than allowable via previous state of the part.
摘要翻译： 本公开提供了用于超微型多孔流量角探头的示例性方法，装置和系统。 发明了许多绝对压差传感器或差压传感器的结构，包装，以便提供流动特性，特别是流动角度的高精度测量。 相对于现有技术的现状，传感器的独特放置导致进一步的小型化。 此外，使用紧密耦合的差分换能器或换能器可实现较小的压力变化的精度测量，同时具有大的平均或平均基准压力，如现代空气动力学或涡轮机械设备中所要求的那样。 超微型传感器的使用和安装内在于本发明的装置，通过部件的先前状态可以实现比允许的更高的频率响应。
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6.发明授权High temperature transducer using SOI, silicon carbide or gallium nitride electronics 有权使用SOI，碳化硅或氮化镓电子器件的高温传感器公开(公告)号：US09105752B2
公开(公告)日：2015-08-11
申请号：US13623906
申请日：2012-09-21
摘要： There is disclosed a high temperature pressure sensing system which includes a SOI, silicon carbide, or gallium nitride Wheatstone bridge including piezoresistors. The bridge provides an output which is applied to an analog to digital converter also fabricated using SOI, silicon carbide, or gallium nitride materials. The output of the analog to digital converter is applied to microprocessor, which microprocessor processes the data or output of the bridge to produce a digital output indicative of bridge value. The microprocessor also receives an output from another analog to digital converter indicative of the temperature of the bridge as monitored by a span resistor coupled to the bridge. The microprocessor has a separate memory coupled thereto which is also fabricated from SOI, silicon carbide, or gallium nitride materials and which memory stores various data indicative of the microprocessor also enabling the microprocessor test and system test to be performed.
摘要翻译： 公开了一种高温压力感测系统，其包括SOI，碳化硅或包括压敏电阻的氮化镓惠斯通电桥。 该桥提供了一种应用于也使用SOI，碳化硅或氮化镓材料制造的模数转换器的输出。 模数转换器的输出被应用于微处理器，微处理器处理桥的数据或输出以产生指示桥值的数字输出。 微处理器还接收来自另一模数转换器的输出，其指示由耦合到桥的跨接电阻器监测的桥的温度。 微处理器具有耦合到其上的单独的存储器，其也由SOI，碳化硅或氮化镓材料制成，并且该存储器存储指示微处理器的各种数据，还使得能够执行微处理器测试和系统测试。
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7.发明申请Flat Covered Leadless Pressure Sensor Assemblies Suitable for Operation in Extreme Environments 有权平面无铅压力传感器组件适用于极端环境中的操作公开(公告)号：US20140123765A1
公开(公告)日：2014-05-08
申请号：US14151775
申请日：2014-01-09
IPC分类号： G01L9/00
CPC分类号： G01L19/0681 , G01L9/0044 , G01L9/0047 , G01L9/0048 , G01L9/0054 , G01L19/0076 , G01L19/0627 , Y10T29/49826
摘要： This disclosure provides example methods, devices and systems associated with flat covered leadless pressure sensor assemblies suitable for operation in extreme environments. In one embodiment, a system may comprise a semiconductor substrate having a first side and a second side; a diaphragm disposed on the first side of the semiconductor substrate; a first cover coupled to the first side of the semiconductor substrate such that it overlays at least the diaphragm, wherein a pressure applied at the first cover is transferred to the diaphragm; and a sensing element disposed on the second side of the semiconductor substrate, wherein the sensing element is used to measure the pressure.
摘要翻译： 本公开提供了与适于在极端环境中操作的平面覆盖的无铅压力传感器组件相关联的示例性方法，装置和系统。 在一个实施例中，系统可以包括具有第一侧和第二侧的半导体衬底; 设置在所述半导体衬底的第一侧上的隔膜; 第一盖，其耦合到所述半导体基板的所述第一侧，使得其至少覆盖所述隔膜，其中施加在所述第一盖上的压力被传递到所述隔膜; 以及设置在所述半导体衬底的第二侧上的感测元件，其中所述感测元件用于测量所述压力。
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公开(公告)号：US20240035911A1
公开(公告)日：2024-02-01
申请号：US18483731
申请日：2023-10-10
发明人： Alexander A. Ned , Scott Goodman
CPC分类号： G01L19/0084 , G01L19/0069 , G01L19/147
摘要： Header construction and techniques are disclosed that utilize header layers that provide support for electrical interconnections. A sensor header assembly includes: an upper header layer having upper through holes arranged in a first configuration; a lower header layer having lower through holes arranged in a second configuration axially offset relative to the first configuration; depressions extending from the lower header layer top surface and partially through the lower header layer, each depression defining a footprint corresponding to the first configuration of the corresponding upper through holes of the upper header layer; upper header pins extending through the corresponding upper through holes and at least partially into the corresponding lower level depressions; and lower header pins extending through the corresponding lower through holes and in electrical communication with the corresponding upper header pins. The depressions form support surfaces for supporting at least the corresponding upper header pins during high-pressure operation.
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公开(公告)号：US20210010891A1
公开(公告)日：2021-01-14
申请号：US17034533
申请日：2020-09-28
发明人： Alexander A. Ned , Scott Goodman
摘要： Header construction and techniques are disclosed that utilize header layers that provide support for electrical interconnections. A sensor header assembly includes: an upper header layer having upper through holes arranged in a first configuration; a lower header layer having lower through holes arranged in a second configuration axially offset relative to the first configuration; depressions extending from the lower header layer top surface and partially through the lower header layer, each depression defining a footprint corresponding to the first configuration of the corresponding upper through holes of the upper header layer; upper header pins extending through the corresponding upper through holes and at least partially into the corresponding lower level depressions; and lower header pins extending through the corresponding lower through holes and in electrical communication with the corresponding upper header pins. The depressions form support surfaces for supporting at least the corresponding upper header pins during high-pressure operation.
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10.发明授权公开(公告)号：US10256138B2
公开(公告)日：2019-04-09
申请号：US15663078
申请日：2017-07-28
IPC分类号： H01L21/762 , H01L27/12 , H01L27/146 , H01L31/18 , H01L23/00
摘要： A method for fabricating silicon-on-insulator (SOI) semiconductor devices, wherein the piezoresistive pattern is defined within a blanket doped layer after fusion bonding. This new method of fabricating SOI semiconductor devices is more suitable for simpler large scale fabrication as it provides the flexibility to select the device pattern/type at the latest stages of fabrication.
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