公开(公告)号：US10475881B2

公开(公告)日：2019-11-12

申请号：US15665905

申请日：2017-08-01

申请人： Infineon Technologies AG

发明人： Alexander Breymesser ,  Hans-Joachim Schulze ,  Holger Schulze ,  Werner Schustereder

IPC分类号： H01L29/06 ,  H01L21/268 ,  H01L21/324 ,  H01L29/08 ,  H01L29/167 ,  H01L29/739 ,  H01L29/861 ,  H01L29/36 ,  H01L21/265

摘要： Crystal lattice vacancies are generated in a pretreated section of a semiconductor layer directly adjoining a process surface. Dopants are implanted at least into the pretreated section. A melt section of the semiconductor layer is heated by irradiating the process surface with a laser beam activating the implanted dopants at least in the melt section.

公开(公告)号：US10153339B2

公开(公告)日：2018-12-11

申请号：US15708209

申请日：2017-09-19

申请人： Infineon Technologies AG

发明人： Stephan Voss ,  Alexander Breymesser ,  Hans-Joachim Schulze ,  Yvonne Gawlina-Schmidl

IPC分类号： H01L29/06 ,  H01L21/225 ,  H01L21/265 ,  H01L21/324 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78

摘要： A semiconductor device includes a common doping region located within a semiconductor substrate of the semiconductor device. The common doping region includes a first portion. A maximal doping concentration within the first portion is higher than 1·1015 cm−3. The common doping region includes a second portion. A minimal doping concentration within the second portion is lower than 50% of the maximal doping concentration within the first portion of the common doping region. The common doping region includes a third portion. A minimal doping concentration within the third portion is more than 30% higher than the minimal doping concentration within the second portion. The second portion of the common doping region is located vertically between the first portion of the common doping region and the third portion of the common doping region.

公开(公告)号：US10049912B2

公开(公告)日：2018-08-14

申请号：US15424118

申请日：2017-02-03

申请人： Infineon Technologies AG

发明人： Alexander Breymesser ,  Andre Brockmeier ,  Elmar Falck ,  Francisco Javier Santos Rodriguez ,  Holger Schulze

IPC分类号： H01L21/762 ,  H01L21/78 ,  H01L29/78 ,  H01L29/06 ,  H01L23/00

摘要： A method of manufacturing a semiconductor device includes forming a frame trench extending from a first surface into a base substrate, forming, in the frame trench, an edge termination structure comprising a glass structure, forming a conductive layer on the semiconductor substrate and the edge termination structure, and removing a portion of the conductive layer above the edge termination structure. A remnant portion of the conductive layer forms a conductive structure that covers a portion of the edge termination structure directly adjoining a sidewall of the frame trench.

公开(公告)号：US20180068975A1

公开(公告)日：2018-03-08

申请号：US15690517

申请日：2017-08-30

申请人： Infineon Technologies AG

发明人： Roland Rupp ,  Alexander Breymesser ,  Andre Brockmeier ,  Carsten von Koblinski ,  Francisco Javier Santos Rodriguez ,  Ronny Kern

IPC分类号： H01L23/00 ,  H01L21/78 ,  H01L23/367 ,  H01L21/48 ,  H01L23/31

CPC分类号： H01L24/94 ,  H01L21/4803 ,  H01L21/561 ,  H01L21/78 ,  H01L23/291 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/367 ,  H01L24/03 ,  H01L24/05 ,  H01L24/83 ,  H01L2224/03312 ,  H01L2224/0332 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05005 ,  H01L2224/83893 ,  H01L2224/83894 ,  H01L2224/94 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/12032 ,  H01L2224/03

摘要： A method for forming semiconductor devices includes attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconductor devices. The method further includes forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer, by forming electrically conductive material within at least one opening extending through the glass structure.

公开(公告)号：US09809877B2

公开(公告)日：2017-11-07

申请号：US15189209

申请日：2016-06-22

申请人： Infineon Technologies AG

发明人： Alexander Breymesser ,  Stephan Voss ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC分类号： C23C14/48 ,  H01J37/147 ,  H01J37/20 ,  H01J37/317 ,  H01L29/06 ,  H01L29/744 ,  H01L29/36 ,  H01L29/861 ,  H01L21/265 ,  H01L21/687 ,  H01L29/45

CPC分类号： C23C14/48 ,  H01J37/1477 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/20214 ,  H01J2237/30483 ,  H01L21/265 ,  H01L21/68764 ,  H01L29/0615 ,  H01L29/0623 ,  H01L29/0638 ,  H01L29/0657 ,  H01L29/36 ,  H01L29/45 ,  H01L29/744 ,  H01L29/861

摘要： An ion implantation apparatus includes an ion beam directing unit, a substrate support, and a controller. The controller is configured to effect a relative movement between an ion beam passing the ion beam directing unit and the substrate support. A beam track of the ion beam on a substrate mounted on the substrate support includes circles or a spiral.

公开(公告)号：US09570542B2

公开(公告)日：2017-02-14

申请号：US14242366

申请日：2014-04-01

申请人： Infineon Technologies AG

发明人： Alexander Breymesser ,  Andre Brockmeier ,  Elmar Falck ,  Francisco Javier Santos Rodriguez ,  Holger Schulze

IPC分类号： H01L29/06 ,  H01L29/32 ,  H01L29/40 ,  H01L29/66 ,  H01L29/739 ,  H01L29/861 ,  H01L21/762 ,  H01L29/16 ,  H01L29/20 ,  H01L29/22

CPC分类号： H01L21/76224 ,  H01L21/78 ,  H01L23/562 ,  H01L29/0615 ,  H01L29/0649 ,  H01L29/0661 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2203 ,  H01L29/32 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/66136 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/8611 ,  H01L29/8613

摘要： A semiconductor device includes a semiconductor body with a first surface at a first side, a second surface opposite to the first surface and an edge surface connecting the first and second surfaces. An edge termination structure includes a glass structure and extends along the edge surface, at least from a plane coplanar with the first surface towards the second surface. A conductive structure extends parallel to the first surface and overlaps the glass structure at the first side.

摘要翻译： 半导体器件包括半导体本体，其具有在第一侧的第一表面，与第一表面相对的第二表面和连接第一表面和第二表面的边缘表面。 边缘终端结构包括玻璃结构并且沿边缘表面至少从与第一表面共面的平面朝向第二表面延伸。 导电结构平行于第一表面延伸并且在第一侧与玻璃结构重叠。

公开(公告)号：US20160372393A1

公开(公告)日：2016-12-22

申请号：US15182983

申请日：2016-06-15

申请人： Infineon Technologies AG

发明人： Christian Kasztelan ,  Alexander Breymesser ,  Manfred Mengel

IPC分类号： H01L23/29 ,  H01L21/56 ,  H01L21/3105 ,  H01L23/31

摘要： A method for forming semiconductor devices includes placing a laminar structure having electrically insulating material arranged between a plurality of electrically conductive structures onto a surface of a semiconductor wafer comprising a plurality of semiconductor device structures. An electrically conductive structure of the plurality of electrically conductive structures is located adjacent to a semiconductor device structure of the plurality of semiconductor device structures. Each electrically conductive structure of the plurality of electrically conductive structures extends from a first surface of the laminar structure towards a second opposite surface of the laminar structure.

摘要翻译： 一种用于形成半导体器件的方法包括将具有布置在多个导电结构之间的电绝缘材料的层状结构放置在包括多个半导体器件结构的半导体晶片的表面上。 多个导电结构的导电结构位于多个半导体器件结构的半导体器件结构附近。 多个导电结构的每个导电结构从层状结构的第一表面延伸到层状结构的第二相对表面。

公开(公告)号：US20150279930A1

公开(公告)日：2015-10-01

申请号：US14242366

申请日：2014-04-01

申请人： Infineon Technologies AG

发明人： Alexander Breymesser ,  Andre Brockmeier ,  Elmar Falck ,  Francisco Javier Santos Rodriguez ,  Holger Schulze

IPC分类号： H01L29/06 ,  H01L29/861 ,  H01L29/739 ,  H01L29/40 ,  H01L21/762

CPC分类号： H01L21/76224 ,  H01L21/78 ,  H01L23/562 ,  H01L29/0615 ,  H01L29/0649 ,  H01L29/0661 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2203 ,  H01L29/32 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/66136 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/8611 ,  H01L29/8613

摘要： A semiconductor device includes a semiconductor body with a first surface at a first side, a second surface opposite to the first surface and an edge surface connecting the first and second surfaces. An edge termination structure includes a glass structure and extends along the edge surface, at least from a plane coplanar with the first surface towards the second surface. A conductive structure extends parallel to the first surface and overlaps the glass structure at the first side.

摘要翻译： 半导体器件包括半导体本体，其具有在第一侧的第一表面，与第一表面相对的第二表面和连接第一表面和第二表面的边缘表面。 边缘终端结构包括玻璃结构并且沿边缘表面至少从与第一表面共面的平面朝向第二表面延伸。 导电结构平行于第一表面延伸并且在第一侧与玻璃结构重叠。

公开(公告)号：US20150041946A1

公开(公告)日：2015-02-12

申请号：US13961155

申请日：2013-08-07

申请人： Infineon Technologies AG

发明人： Stephan Voss ,  Alexander Breymesser ,  Hans-Joachim Schulze ,  Erich Griebl ,  Oliver Haeberlen ,  Andreas Moser

IPC分类号： H01L29/06 ,  H01L21/761

CPC分类号： H01L29/063 ,  H01L21/761 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813

摘要： A semiconductor device includes a semiconductor body and an edge termination structure. The edge termination structure comprises a first oxide layer, a second oxide layer, a semiconductor mesa region between the first oxide layer and the second oxide layer, and a doped field region comprising a first section in the semiconductor mesa region, and a second section in a region below the semiconductor mesa region. The second section overlaps the first and the second oxide layers in the region below the semiconductor mesa region.

摘要翻译： 半导体器件包括半导体本体和边缘端接结构。 边缘终端结构包括第一氧化物层，第二氧化物层，第一氧化物层和第二氧化物层之间的半导体台面区域，以及包括半导体台面区域中的第一部分的掺杂场区域，以及第二部分 半导体台面区域以下的区域。 第二部分与半导体台面区域下方的区域中的第一和第二氧化物层重叠。