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公开(公告)号：US11848377B2
公开(公告)日：2023-12-19
申请号：US17307632
申请日：2021-05-04
发明人： Anton Mauder , Hans-Joachim Schulze , Matteo Dainese , Elmar Falck , Franz-Josef Niedernostheide , Manfred Pfaffenlehner
CPC分类号： H01L29/7811 , H01L29/0619 , H01L29/1095 , H01L29/402
摘要： A semiconductor component includes a semiconductor body having opposing first surface and second surfaces, and a side surface surrounding the semiconductor body. The semiconductor component also includes an active region including a first semiconductor region of a first conductivity type, which is electrically contacted via the first surface, and a second semiconductor region of a second conductivity type, which is electrically contacted via the second surface. The semiconductor component further includes an edge termination region arranged in a lateral direction between the first semiconductor region of the active region and the side surface, and includes a first edge termination structure and a second edge termination structure. The second edge termination structure is arranged in the lateral direction between the first edge termination structure and the side surface and extends from the first surface in a vertical direction more deeply into the semiconductor body than the first edge termination structure.
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公开(公告)号：US11018249B2
公开(公告)日：2021-05-25
申请号：US16263244
申请日：2019-01-31
发明人： Anton Mauder , Hans-Joachim Schulze , Matteo Dainese , Elmar Falck , Franz-Josef Niedernostheide , Manfred Pfaffenlehner
摘要： A semiconductor component includes a semiconductor body having opposing first surface and second surfaces, and a side surface surrounding the semiconductor body. The semiconductor component also includes an active region including a first semiconductor region of a first conductivity type, which is electrically contacted via the first surface, and a second semiconductor region of a second conductivity type, which is electrically contacted via the second surface. The semiconductor component further includes an edge termination region arranged in a lateral direction between the first semiconductor region of the active region and the side surface, and includes a first edge termination structure and a second edge termination structure. The second edge termination structure is arranged in the lateral direction between the first edge termination structure and the side surface and extends from the first surface in a vertical direction more deeply into the semiconductor body than the first edge termination structure.
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公开(公告)号：US09905634B2
公开(公告)日：2018-02-27
申请号：US15188695
申请日：2016-06-21
IPC分类号： H01L29/06 , H01L29/10 , H01L21/265 , H01L21/225 , H01L21/263 , H01L29/66 , H01L29/739 , H01L29/78
CPC分类号： H01L29/0619 , H01L21/2253 , H01L21/263 , H01L21/26506 , H01L29/063 , H01L29/0638 , H01L29/0696 , H01L29/1095 , H01L29/66325 , H01L29/66674 , H01L29/7391 , H01L29/7393 , H01L29/7801
摘要： A semiconductor device having a first load terminal, a second load terminal and a semiconductor body is presented. The semiconductor body comprises an active region configured to conduct a load current between the first load terminal and the second load terminal and a junction termination region surrounding the active region. The semiconductor body includes a drift layer arranged within both the active region and the junction termination region and having dopants of a first conductivity type at a drift layer dopant concentration of equal to or less than 1014 cm−3; a body zone arranged in the active region and having dopants of a second conductivity type complementary to the first conductivity type and isolating the drift layer from the first load terminal; a guard zone arranged in the junction termination region and having dopants of the second conductivity type and being configured to extend a depletion region formed by a transition between the drift layer and the body zone; a field stop zone arranged adjacent to the guard zone, the field stop zone having dopants of the first conductivity type at a field stop zone dopant concentration that is higher than the drift layer dopant concentration by a factor of at least 2; a low doped zone arranged adjacent to the field stop zone, the low doped zone having dopants of the first conductivity type at a dopant concentration that is lower than the drift layer dopant concentration by a factor of at least 1.5, wherein the body zone, the guard zone, the field stop zone and the low doped zone are arranged in the semiconductor body such that they exhibit a common depth range (DR) of at least 1 μm along a vertical extension direction (Z).
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公开(公告)号：US20170005163A1
公开(公告)日：2017-01-05
申请号：US15188695
申请日：2016-06-21
IPC分类号： H01L29/06 , H01L21/265 , H01L21/225 , H01L29/10
CPC分类号： H01L29/0619 , H01L21/2253 , H01L21/263 , H01L21/26506 , H01L29/063 , H01L29/0638 , H01L29/0696 , H01L29/1095 , H01L29/66325 , H01L29/66674 , H01L29/7391 , H01L29/7393 , H01L29/7801
摘要： A semiconductor device having a first load terminal, a second load terminal and a semiconductor body is presented. The semiconductor body comprises an active region configured to conduct a load current between the first load terminal and the second load terminal and a junction termination region surrounding the active region. The semiconductor body includes a drift layer arranged within both the active region and the junction termination region and having dopants of a first conductivity type at a drift layer dopant concentration of equal to or less than 1014 cm−3; a body zone arranged in the active region and having dopants of a second conductivity type complementary to the first conductivity type and isolating the drift layer from the first load terminal; a guard zone arranged in the junction termination region and having dopants of the second conductivity type and being configured to extend a depletion region formed by a transition between the drift layer and the body zone; a field stop zone arranged adjacent to the guard zone, the field stop zone having dopants of the first conductivity type at a field stop zone dopant concentration that is higher than the drift layer dopant concentration by a factor of at least 2; a low doped zone arranged adjacent to the field stop zone, the low doped zone having dopants of the first conductivity type at a dopant concentration that is lower than the drift layer dopant concentration by a factor of at least 1.5, wherein the body zone, the guard zone, the field stop zone and the low doped zone are arranged in the semiconductor body such that they exhibit a common depth range (DR) of at least 1 μm along a vertical extension direction (Z).
摘要翻译： 提出了具有第一负载端子，第二负载端子和半导体本体的半导体器件。 半导体本体包括有源区域，被配置为在第一负载端子和第二负载端子之间传导负载电流，以及围绕有源区域的接合端接区域。 半导体本体包括布置在有源区和结端接区内的漂移层，并具有等于或小于1014cm-3的漂移层掺杂剂浓度的第一导电类型的掺杂剂; 身体区域，布置在有源区域中并具有与第一导电类型互补的第二导电类型的掺杂剂，并将漂移层与第一负载端子隔离; 保护区，布置在所述连接终端区域中并且具有所述第二导电类型的掺杂剂并且被配置为延伸由所述漂移层和所述体区之间的过渡形成的耗尽区; 与所述保护区相邻设置的场停止区，所述场停止区具有比所述漂移层掺杂剂浓度高至少2的场阻带掺杂剂浓度的所述第一导电类型的掺杂剂; 低掺杂区，其布置成与所述场停止区相邻，所述低掺杂区具有掺杂浓度低于所述漂移层掺杂剂浓度至少为1.5的掺杂浓度的第一导电类型，其中所述体区， 保护区域，场阻挡区域和低掺杂区域布置在半导体本体中，使得它们沿垂直延伸方向（Z）呈现至少1μm的公共深度范围（DR）。
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公开(公告)号：US20160093690A1
公开(公告)日：2016-03-31
申请号：US14501298
申请日：2014-09-30
发明人： Elmar Falck , Gerhard Schmidt
IPC分类号： H01L29/06 , H01L21/761 , H01L21/765 , H01L29/739
CPC分类号： H01L29/063 , H01L21/761 , H01L21/765 , H01L29/0615 , H01L29/0649 , H01L29/0692 , H01L29/0834 , H01L29/0878 , H01L29/1608 , H01L29/36 , H01L29/6606 , H01L29/66136 , H01L29/66333 , H01L29/66348 , H01L29/7395 , H01L29/7397 , H01L29/7811 , H01L29/7813 , H01L29/861 , H01L29/8613 , H01L29/872
摘要： A semiconductor device has a semiconductor body with a first side and a second side that is arranged distant from the first side in a first vertical direction. The semiconductor device has a rectifying junction, a field stop zone of a first conduction type, and a drift zone of a first conduction type arranged between the rectifying junction and the field stop zone. The semiconductor body has a net doping concentration along a line parallel to the first vertical direction. At least one of (a) and (b) applies: (a) the drift zone has, at a first depth, a charge centroid, wherein a distance between the rectifying junction and the charge centroid is less than 37% of the thickness the drift zone has in the first vertical direction; (b) the absolute value of the net doping concentration comprises, along the straight line and inside the drift zone, a local maximum value.
摘要翻译： 半导体器件具有半导体本体，其具有在第一垂直方向上远离第一侧布置的第一侧和第二侧。 半导体器件具有整流结，第一导电类型的场阻挡区和布置在整流结与场停止区之间的第一导电类型的漂移区。 半导体体沿着与第一垂直方向平行的线具有净掺杂浓度。 （a）和（b）中的至少一个适用：（a）漂移区在第一深度处具有电荷重心，其中整流结和电荷重心之间的距离小于厚度的37％ 漂移区位于第一垂直方向; （b）净掺杂浓度的绝对值包括沿着直线和漂移区内部的局部最大值。
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公开(公告)号：US20210257489A1
公开(公告)日：2021-08-19
申请号：US17307632
申请日：2021-05-04
发明人： Anton Mauder , Hans-Joachim Schulze , Matteo Dainese , Elmar Falck , Franz-Josef Niedernostheide , Manfred Pfaffenlehner
摘要： A semiconductor component includes a semiconductor body having opposing first surface and second surfaces, and a side surface surrounding the semiconductor body. The semiconductor component also includes an active region including a first semiconductor region of a first conductivity type, which is electrically contacted via the first surface, and a second semiconductor region of a second conductivity type, which is electrically contacted via the second surface. The semiconductor component further includes an edge termination region arranged in a lateral direction between the first semiconductor region of the active region and the side surface, and includes a first edge termination structure and a second edge termination structure. The second edge termination structure is arranged in the lateral direction between the first edge termination structure and the side surface and extends from the first surface in a vertical direction more deeply into the semiconductor body than the first edge termination structure.
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公开(公告)号：US10943974B2
公开(公告)日：2021-03-09
申请号：US16227854
申请日：2018-12-20
IPC分类号： H01L29/06 , H01L21/225 , H01L21/78 , H01L21/265 , H01L21/266 , H01L21/02 , H01L29/66 , H01L29/739 , H01L29/78
摘要： A channel stopper region extending from a first main surface into a component layer of a first conductivity type is formed in an edge region of a component region, the edge region being adjacent to a sawing track region. Afterward, a doped region extending from the first main surface into the component layer is formed in the component region. The channel stopper region is formed by a photolithographic method that is carried out before a first photolithographic method for introducing dopants into a section of the component region outside the channel stopper region.
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公开(公告)号：US10038052B2
公开(公告)日：2018-07-31
申请号：US15085618
申请日：2016-03-30
IPC分类号： H01L21/761 , H01L29/06 , H01L29/78
CPC分类号： H01L29/0623 , H01L21/761 , H01L29/0619 , H01L29/0638 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/7395 , H01L29/7811 , H01L29/7813
摘要： A vertical semiconductor device comprises a substrate having a front surface and a back surface, an active area (AA) located in the substrate, having a drift region doped with a first dopant type, an edge termination region (ER) laterally surrounding the active area (AA), a channelstopper terminal provided at the front surface and located in the edge termination region (ER), and a first suppression trench located on a side of the channelstopper terminal towards the active region (AA), and provided adjacent to the channelstopper terminal. Further, a production method for such a semiconductor device is provided.
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9.发明申请公开(公告)号：US20170148663A1
公开(公告)日：2017-05-25
申请号：US15424118
申请日：2017-02-03
发明人： Alexander Breymesser , Andre Brockmeier , Elmar Falck , Francisco Javier Santos Rodriguez , Holger Schulze
IPC分类号： H01L21/762 , H01L21/78 , H01L29/06 , H01L23/00
CPC分类号： H01L21/76224 , H01L21/78 , H01L23/562 , H01L29/0615 , H01L29/0649 , H01L29/0661 , H01L29/1095 , H01L29/1608 , H01L29/20 , H01L29/2203 , H01L29/32 , H01L29/402 , H01L29/407 , H01L29/41766 , H01L29/66136 , H01L29/66348 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7811 , H01L29/7813 , H01L29/8611 , H01L29/8613
摘要： A method of manufacturing a semiconductor device includes forming a frame trench extending from a first surface into a base substrate, forming, in the frame trench, an edge termination structure comprising a glass structure, forming a conductive layer on the semiconductor substrate and the edge termination structure, and removing a portion of the conductive layer above the edge termination structure. A remnant portion of the conductive layer forms a conductive structure that covers a portion of the edge termination structure directly adjoining a sidewall of the frame trench.
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10.发明授权Semiconductor device with a field ring edge termination structure and a separation trench arranged between different field rings 有权具有场环边缘终端结构的半导体器件和布置在不同场环之间的分离沟槽公开(公告)号：US09293524B2
公开(公告)日：2016-03-22
申请号：US14268033
申请日：2014-05-02
IPC分类号： H01L29/66 , H01L29/06 , H01L29/78 , H01L29/778 , H01L29/74 , H01L29/739 , H01L21/761
CPC分类号： H01L29/0623 , H01L21/761 , H01L29/0619 , H01L29/0649 , H01L29/1608 , H01L29/20 , H01L29/2003 , H01L29/22 , H01L29/24 , H01L29/404 , H01L29/407 , H01L29/41766 , H01L29/66348 , H01L29/7393 , H01L29/7397 , H01L29/74 , H01L29/778 , H01L29/78 , H01L29/7811 , H01L29/7813 , H01L29/8611
摘要： A semiconductor device has a semiconductor body with bottom and top sides and a lateral surface. An active semiconductor region is formed in the semiconductor body and an edge region surrounds the active semiconductor region. A first semiconductor zone of a first conduction type is formed in the edge region. An edge termination structure having at least N field limiting structures is formed in the edge region. Each of the field limiting structures has a field ring and a separation trench formed in the semiconductor body, where N is at least 1. Each of the field rings has a second conduction type, forms a pn-junction with the first semiconductor zone and surrounds the active semiconductor region. For each of the field limiting structures, the separation trench of that field limiting structure is arranged between the field ring of that field limiting structure and the active semiconductor region.
摘要翻译： 半导体器件具有底部和顶侧以及侧面的半导体本体。 在半导体本体中形成有源半导体区域，并且边缘区域围绕有源半导体区域。 第一导电类型的第一半导体区形成在边缘区域中。 在边缘区域中形成具有至少N个场限制结构的边缘终止结构。 每个场限制结构具有形成在半导体本体中的场环和分离沟槽，其中N至少为1.每个场环具有第二导电类型，与第一半导体区形成pn结并且围绕 有源半导体区域。 对于每个场限制结构，该场限制结构的分离沟槽被布置在该场限制结构的场环和有源半导体区之间。
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