- 专利标题: Semiconductor component with edge termination region
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申请号: US17307632申请日: 2021-05-04
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公开(公告)号: US11848377B2公开(公告)日: 2023-12-19
- 发明人: Anton Mauder , Hans-Joachim Schulze , Matteo Dainese , Elmar Falck , Franz-Josef Niedernostheide , Manfred Pfaffenlehner
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Murphy, Bilak & Homiller, PLLC
- 优先权: DE 2018102279.4 2018.02.01
- 分案原申请号: US16263244 2019.01.31
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L29/40
摘要:
A semiconductor component includes a semiconductor body having opposing first surface and second surfaces, and a side surface surrounding the semiconductor body. The semiconductor component also includes an active region including a first semiconductor region of a first conductivity type, which is electrically contacted via the first surface, and a second semiconductor region of a second conductivity type, which is electrically contacted via the second surface. The semiconductor component further includes an edge termination region arranged in a lateral direction between the first semiconductor region of the active region and the side surface, and includes a first edge termination structure and a second edge termination structure. The second edge termination structure is arranged in the lateral direction between the first edge termination structure and the side surface and extends from the first surface in a vertical direction more deeply into the semiconductor body than the first edge termination structure.
公开/授权文献
- US20210257489A1 Semiconductor Component with Edge Termination Region 公开/授权日:2021-08-19
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