公开(公告)号：US4780382A

公开(公告)日：1988-10-25

申请号：US930812

申请日：1986-11-13

Applicant: Gerhard Stengl ,  Hans Loschner

Inventor： Gerhard Stengl ,  Hans Loschner

IPC: G03F1/20 ,  H01L21/027 ,  G03F9/00 ,  G03C5/00 ,  G21K5/00

CPC classification number: G03F1/20 ,  Y10S430/167

Abstract: The invention is a process for making a transmission mask which can be used in structuring a semiconductor substrate in an additive or subtractive way by two galvanic depositions of layers of which one provides the mask structure and the other a grid structure covering the openings in the mask structure. The thickness of the structure is freely selectable self-adjusting (within the limits of the known engineering methods). The aim is the production of a transmission mask with a constant effective thickness above the mask surface.

Abstract translation: 本发明是一种制造透射掩模的方法，该透射掩模可用于通过两层电镀沉积形成掩模结构，另一种覆盖掩模中的开口的栅格结构，以加法或减法的方式构造半导体衬底 结构体。 结构的厚度可自由选择自调节（在已知工程方法的限度内）。 目的是生产在掩模表面上方具有恒定有效厚度的透射掩模。

公开(公告)号：US4370556A

公开(公告)日：1983-01-25

申请号：US217064

申请日：1980-12-16

Applicant: Gerhard Stengl ,  Hans Loschner

Inventor： Gerhard Stengl ,  Hans Loschner

IPC: H01L21/263 ,  G03F1/20 ,  G03F7/20 ,  G21K1/10 ,  H01L21/027 ,  G01J1/00

CPC classification number: G03F1/20 ,  G03F7/70691 ,  G03F7/708 ,  G21K1/10

Abstract: Mask for use in the treatment of substrates with an image-forming medium. The mask foil is thermally prestressed by the frame at the temperature of use. For this purpose, the material of the frame has a higher coefficient of thermal expansion than the material of the mask foil. A method of manufacturing such masks includes the step wherein the mask foil is mounted in the frame at a temperature which lies below the temperature of use.

Abstract translation: 用于用成像介质处理底物的掩模。 掩模箔在使用温度下由框架预热。 为此，框架的材料具有比掩模箔的材料更高的热膨胀系数。 制造这种掩模的方法包括以下步骤：其中掩模箔以低于使用温度的温度安装在框架中。

公开(公告)号：US07737422B2

公开(公告)日：2010-06-15

申请号：US11816353

申请日：2006-02-16

Applicant: Elmar Platzgummer ,  Stefan Cernusca ,  Gerhard Stengl

Inventor： Elmar Platzgummer ,  Stefan Cernusca ,  Gerhard Stengl

IPC: G21G5/00

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/31788 ,  H01J2237/31793

Abstract: A particle-beam projection processing apparatus for irradiating a target, with an illumination system for forming a wide-area illuminating beam of energetic electrically charged particles; a pattern definition means for positioning an aperture pattern in the path of the illuminating beam; and a projection system for projecting the beam thus patterned onto a target to be positioned after the projection system. A foil located across the path of the patterned beam is positioned between the pattern definition means and the position of the target at a location close to an image of the aperture pattern formed by the projection system.

Abstract translation: 一种用于照射目标的粒子束投影处理装置，具有用于形成能量带电粒子的广域照明光束的照明系统; 用于将光圈图案定位在照明光束的路径中的图案定义装置; 以及投影系统，用于将如此图案化的光束投影到待投影系统上的待定位的靶上。 位于图案化光束的路径上的箔位于图案定义装置之间并且位于靠近由投影系统形成的孔径图案的图像的位置处的目标的位置。

公开(公告)号：US07214951B2

公开(公告)日：2007-05-08

申请号：US10969493

申请日：2004-10-20

Applicant: Gerhard Stengl ,  Elmar Platzgummer ,  Hans Loschner

Inventor： Gerhard Stengl ,  Elmar Platzgummer ,  Hans Loschner

IPC: H01J37/08 ,  G21G5/00

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3177

Abstract: A charged-particle multi-beam exposure apparatus (1) for exposure of a target (41) uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target (41). For each particle beam an illumination system (10), a pattern definition means (20) and a projection optics system (30) are provided. The illuminating system (10) and/or the projection optics system (30) comprise particle-optical lenses having lens elements (L1, L2, L3, L4, L5) common to more than one particle beam. The pattern definition means (20) defines a multitude of beamlets in the respective particle beam, forming its shape into a desired pattern which is projected onto the target (41), by allowing it to pass only through a plurality of apertures defining the shape of beamlets permeating said apertures, and further comprises a blanking means to switch off the passage of selected beamlets from the respective paths of the beamlets.

Abstract translation: 用于曝光目标（41）的带电粒子多光束曝光装置（1）使用沿平行光束路径朝向目标（41）传播的多个带电粒子束。 对于每个粒子束，提供照明系统（10），图案定义装置（20）和投影光学系统（30）。 照明系统（10）和/或投影光学系统（30）包括具有多于一个粒子束共有的透镜元件（L 1，L 2，L 3，L 4，L 5）的粒子 - 光学透镜。 图案定义装置（20）在相应的粒子束中限定多个子束，通过使其仅通过限定形状的多个孔而将其形状形成为投射到目标（41）上的期望图案 子束穿透所述孔，并且还包括消隐装置，以切断所选子束从子束的相应路径的通过。

公开(公告)号：US07033647B2

公开(公告)日：2006-04-25

申请号：US10301317

申请日：2002-11-20

Applicant: Xinhe Tang ,  Klaus Mauthner ,  Ernst Hammel ,  Hans Löschner ,  Elmar Platzgummer ,  Gerhard Stengl

Inventor： Xinhe Tang ,  Klaus Mauthner ,  Ernst Hammel ,  Hans Löschner ,  Elmar Platzgummer ,  Gerhard Stengl

IPC: C23C16/26 ,  C23C16/48 ,  D01F9/127

CPC classification number: C30B23/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C30B29/02 ,  C30B29/605 ,  C30B33/00 ,  Y10S427/102

Abstract: Method of synthesizing carbon nano tubes (CNTs) on a catalyst layer formed on a support member, by catalytic deposition of carbon from a gaseous phase, whereby an ion beam is used prior to, during, and/or after formation of the carbon nano tubes for modifying the physical, chemical, and/or conductive properties of the carbon nanotubes.

Abstract translation: 在形成在支撑体上的催化剂层上合成碳纳米管（CNT）的方法，通过从气相中催化沉积碳，由此在形成碳纳米管之前，期间和/或之后使用离子束 用于改变碳纳米管的物理，化学和/或导电性质。

公开(公告)号：US5742062A

公开(公告)日：1998-04-21

申请号：US598081

申请日：1996-02-08

Applicant: Gerhard Stengl ,  Alfred Chalupka ,  Herbert Vonach ,  Hans Loeschner

Inventor： Gerhard Stengl ,  Alfred Chalupka ,  Herbert Vonach ,  Hans Loeschner

IPC: G21K5/04 ,  G03F7/20 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J37/10

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/04735 ,  H01J2237/04924 ,  H01J2237/31755 ,  H01J2237/31788

Abstract: An arrangement for masked beam lithography by means of electrically charged particles for the imaging of structures of a mask on a substrate arranged behind it, with a substantially punctiform particle source (Q) and an extraction system (Ex) for a specific type of charged particles which leave the source (Q) in the form of a divergent particle beam, and with an electrode arrangement (B, B', El.sub.1, El.sub.2, E.sub.3, . . . El.sub.n) for concentrating the divergent particle beam into a particle beam which is at least approximately parallel, by means of which an electrostatic acceleration field (E) is generated, the potential (U) of which in the beam direction has a constant gradient at least in parts and perpendicular to the beam direction is substantially constant at least within the beam cross-section. The electrode arrangement can be formed for example by a plurality of coaxial ring electrodes (El.sub.1, El.sub.2, El.sub.3, . . . El.sub.n) which are disposed at intervals behind one another in the beam direction, by a coaxial hollow cylinder which is aligned in the beam direction or a grating with a predetermined constant electrical resistance per unit of length, or by a plurality of longitudinal bars which are aligned in the beam direction, disposed parallel on surface of an imaginary coaxial cylinder with a predetermined constant electrical resistance per unit of length.

Abstract translation: 用于通过带电粒子进行掩模束光刻的布置，用于对布置在其后面的基板上的掩模的结构进行成像，具有基本上点状的粒子源（Q）和用于特定类型的带电粒子的提取系统（Ex） 其以发散粒子束的形式离开源极（Q），并且具有用于将发散粒子束集中到粒子束中的电极装置（B，B'，El1，El2，E3，...，Eln） 至少近似平行，通过该静电加速场产生静电加速度场（E），至少在波束方向的至少部分和垂直于波束方向的波束方向的电位（U）至少在 梁横截面。 电极布置可以由例如多个同轴环电极（E11，E12，E13 ...，Eln）形成，这两个同轴环电极通过一个同轴的中空圆筒形成，该同轴环形电极沿光束方向彼此间隔设置， 光束方向或具有每单位长度的预定恒定电阻的光栅，或通过沿着光束方向对准的多个纵向条，平行于虚拟同轴圆柱体的表面设置，每单位长度具有预定的恒定电阻 。

公开(公告)号：US5693950A

公开(公告)日：1997-12-02

申请号：US666495

申请日：1996-09-03

Applicant: Gerhard Stengl ,  Alfred Chalupka ,  Herbert Vonach

Inventor： Gerhard Stengl ,  Alfred Chalupka ,  Herbert Vonach

IPC: G03F7/20 ,  H01J37/09 ,  H01J37/30 ,  H01J37/317 ,  H01L21/027 ,  H01L21/266 ,  H01L21/263

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/153 ,  H01J2237/31755 ,  H01J2237/31788

Abstract: A charged particle, in particular ion projector system, has a mask arranged in the path of the charged particle beam and provided with transparent spots, in particular openings, arranged asymmetrically to the optical axis, which are reproduced on a wafer by means of lenses arranged in the path of the charged particle beam. The charged particle beam has at least one cross-over (crosses the optical axis at least once) between the mask and the wafer. Charged particles with an opposite charge to the charge of the reproduction particles are supplied into the path of the reproduction charged particle beam in a defined area located between the mask and the wafer. The limits that define said area are selected in such a way that the absolute value of the integral effect of the space charge on the particles that reproduce the mask structures is as high upstream of said area (seen in the direction of radiation) as the absolute value of the integral effect of the space charge downstream of said area.

Abstract translation: PCT No.PCT / AT95 / 00004 Sec。 371日期1996年9月3日 102（e）1996年9月3日PCT 1995年1月12日PCT PCT。 出版物WO95 / 19640 日期1995年7月20日带电粒子，特别是离子投影仪系统，具有布置在带电粒子束的路径中的掩模，并且具有布置成不对称的光轴的透明点，特别是在晶片上再现的光轴 通过布置在带电粒子束的路径中的透镜。 带电粒子束在掩模和晶片之间具有至少一个交叉（与光轴交叉至少一次）。 与再现粒子的电荷相反的带电粒子被提供到位于掩模和晶片之间的限定区域中的再现带电粒子束的路径中。 限定所述区域的限制是这样选择的，即空间电荷对再现掩模结构的颗粒的积分效应的绝对值在所述区域的上游（在辐射方向上看到）为绝对值，绝对值 所述区域下游空间电荷积分效应的值。

公开(公告)号：US5378917A

公开(公告)日：1995-01-03

申请号：US40536

申请日：1993-03-30

Applicant: Alfred Chalupka ,  Gerhard Stengl ,  Herbert Vonach

Inventor： Alfred Chalupka ,  Gerhard Stengl ,  Herbert Vonach

IPC: G03F7/20 ,  H01J37/12 ,  H01J37/30 ,  H01L21/027

CPC classification number: H01J37/3007 ,  H01J37/12

Abstract: In an ion optical imaging system, especially for lithographic imaging on a wafer, two collecting lenses are provided between the mask and the wafer. At least one of the collecting lenses is a three-electrode grid lens, i.e. a lens in which a grid is disposed perpendicular to the optical axis between a pair of tubular electrodes.

Abstract translation: 在离子光学成像系统中，特别是对于晶片上的光刻成像，在掩模和晶片之间提供两个收集透镜。 收集透镜中的至少一个是三电极网格透镜，即其中格栅垂直于一对管状电极之间的光轴布置的透镜。

公开(公告)号：US4859857A

公开(公告)日：1989-08-22

申请号：US9414

申请日：1987-01-30

Applicant: Gerhard Stengl ,  Hans Loschner ,  Peter Wolf

Inventor： Gerhard Stengl ,  Hans Loschner ,  Peter Wolf

IPC: G03F7/20 ,  H01J37/153 ,  H01J37/30 ,  H01J37/317 ,  H01L21/027

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3007 ,  H01J37/3174 ,  H01J2237/1516 ,  H01J2237/30455 ,  H01J2237/31776

Abstract: A multipole corrective element with the individual poles being electromagnetically energized individually and selectively to create a variable field around a charged particle beam projected through a mask and a lens system onto a substrate, e.g. an ion-beam or electron-beam microlithography. The corrective element is provided independently of the ion-optical lens system between the latter and the mask, preferably proximal to the mask.

Abstract translation: 具有各个极的多极校正元件被单独和选择性地电磁激励，以在通过掩模和透镜系统投射到基底上的带电粒子束周围产生可变场，例如。 离子束或电子束微光刻法。 独立于后者和掩模之间的离子 - 光学透镜系统提供的校正元件，优选地靠近掩模。

公开(公告)号：US4823011A

公开(公告)日：1989-04-18

申请号：US50978

申请日：1987-05-15

Applicant: Gerhard Stengl ,  Hans Loschner

Inventor： Gerhard Stengl ,  Hans Loschner

IPC: G03F9/00 ,  H01J37/304 ,  H01L21/027 ,  H01L21/30 ,  H01L21/68

CPC classification number: H01J37/3045

Abstract: An apparatus and method for the fine alignment of a mask with a substrate in ion-projection lithography, e.g. for the production of integrated circuit chips, utilizes a multipole, an axial magnetic field generator and a scale controlling projection lens in the path of the beam. The mask is provided with markings which are imaged on the substrate and brought into registry with corresponding markings thereon utilizing pairs of detectors associated with each linear marking and responsive to secondary emission of the ion-beam marking projected on the substrate. All of the markings are straight lines.

Abstract translation: 用于在离子投影光刻中掩模与衬底精细对准的装置和方法，例如， 为了生产集成电路芯片，在光束的路径中利用多极，轴向磁场发生器和刻度控制投影透镜。 掩模具有标记，其被成像在基板上，并使用与每个线性标记相关联的检测器对并且响应于投影在基板上的离子束标记的二次发射而与其中的相应标记对准。 所有的标记都是直线。