公开(公告)号：US4891547A

公开(公告)日：1990-01-02

申请号：US205535

申请日：1988-06-10

Applicant: Gerhard Stengl ,  Hans Loschner

Inventor： Gerhard Stengl ,  Hans Loschner

IPC: G03F1/20 ,  G03F1/22 ,  H01L21/027 ,  H01L21/30

CPC classification number: G03F1/20 ,  G03F1/22

Abstract: The mask of our invention can be used in image forming units, for example in ion projection microlithography. The mask comprises a mask foil clamped into a retaining frame. The mask foil has a larger thermal expansion coefficient than the retaining frame. To make this mask the mask foil and retaining frame are heatead to a higher temperature than room temperature and clamped in position at this temperature.

Abstract translation: 本发明的掩模可用于图像形成单元，例如在离子投影微光刻中。 掩模包括夹在保持框架中的掩模箔。 掩模箔具有比保持框架更大的热膨胀系数。 为了使这个掩模，掩模箔和固定框架在比室温高的温度下被捕获并在该温度下被夹紧就位。

公开(公告)号：US4775797A

公开(公告)日：1988-10-04

申请号：US930805

申请日：1986-11-13

Applicant: Gerhard Stengl ,  Hans Loschner

Inventor： Gerhard Stengl ,  Hans Loschner

IPC: G03F1/22 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G01J1/00

CPC classification number: G03F1/22 ,  G03F7/2002 ,  G03F7/707 ,  G03F7/70866 ,  G03F7/70875

Abstract: Our invention is a process for stabilizing a projection mask which is put in operation at an elevated temperature. The frame containing the mask foil is heated to a temperature which is higher than the temperature of the mask foil. The mask foil is thus kept under tension by controlling the temperature of the frame it is held in and distortions like the distortions which would otherwise occur in long time operation and as conditioned by the mask foil hanging through it are avoided. The effect of the expansion of the mask foil can be compensated in the image forming unit by correction of the image formation scale.

Abstract translation: 我们的发明是一种在升高的温度下投入使用的投影掩模的稳定化方法。 将包含掩模箔的框架加热到高于掩模箔的温度的温度。 因此，掩模箔通过控制其保持的框架的温度而保持在张力下，并且避免了像在长时间操作中会发生的失真以及通过悬挂在其上的掩模箔调节的扭曲。 可以通过图像形成标度的校正在图像形成单元中补偿掩模箔的膨胀效果。

公开(公告)号：US4967088A

公开(公告)日：1990-10-30

申请号：US201959

申请日：1988-06-02

Applicant: Gerhard Stengl ,  Hans Loschner ,  Ernst Hammell ,  Hilton F. Glavish

Inventor： Gerhard Stengl ,  Hans Loschner ,  Ernst Hammell ,  Hilton F. Glavish

IPC: H01L21/30 ,  G03F9/02 ,  H01J37/317 ,  H01L21/027

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/1516 ,  H01J2237/30438 ,  H01J2237/31755 ,  H01J2237/31776

Abstract: In an ion projection lithography system, apparatus and methods for positioning on a substrate or wafer at a target station an image of structures provided on a mask, wherein the mask includes reference marks to provide ion reference beams about the image field, the target station includes marks and the beam of the system is controlled to establish a coincidence of the marks on the mask with the corresponding marks at the target station. The ion projection system shown includes in this optical path an electrostatic multipole, means for rotational adjustment of the image relative to the substrate, and means for correcting the scale of the image. Embodiments are shown in which the marks at the target station are carried on the wafer or on a reference block which is positionally related to the wafer, e.g., by an interferometer. In the case of the reference block, it has an aperture corresponding in size to the mask image to be formed on the substrate so that the marks are disposed outside the optical path used to generate the image on the substrate. Detectors provided for secondary radiation emitted by the marks at the target station as a result of the ion reference beams passing through the marks on the mask produce signals that control the multipole, the means for relative rotational adjustment of the image on the substrate and the means for scale correction. Special masks are provided that enable the reference beams to reach their respective marks at the target station during blanking and unblanking of the mask, permitting operation of the alignment system at both times. The reference beams are shielded from the image beam and are scanned repeatedly over their respective marks at the target station.

Abstract translation: 在离子投影光刻系统中，用于在目标站上在基板或晶片上定位设置在掩模上的结构的图像的装置和方法，其中所述掩模包括用于提供关于图像场的离子参考光束的参考标记，所述目标站包括 控制系统的标记和光束，以使掩模上的标记与目标工位的相应标记重合。 所示的离子投影系统在该光路中包括静电多极，用于相对于衬底旋转调整图像的装置，以及用于校正图像尺度的装置。 示出了实施例，其中目标站处的标记被承载在晶片上或者例如通过干涉仪位于与晶片相关的参考块上。 在参考块的情况下，其具有对应于要在衬底上形成的掩模图像的尺寸的孔，使得标记设置在用于在衬底上产生图像的光路的外侧。 由于通过掩模上的标记的离子参考光束，由目标台上的标记发射的二次辐射的检测器产生控制多极的信号，用于基板上的图像的相对旋转调整的装置和装置 用于刻度校正。 提供特殊掩模，使得参考光束能够在掩模的遮蔽和非曝光期间在目标工位达到其各自的标记，从而允许两次对准系统的操作。 参考光束与图像束屏蔽，并在目标工位上重复扫描它们各自的标记。

公开(公告)号：US4924104A

公开(公告)日：1990-05-08

申请号：US244786

申请日：1988-09-09

Applicant: Gerhard Stengl ,  Hans Loschner

Inventor： Gerhard Stengl ,  Hans Loschner

IPC: G03F1/74 ,  H01J37/30 ,  H01L21/027

CPC classification number: G03F1/74 ,  H01J37/3005 ,  H01J37/3007

Abstract: The invention concerns an ion beam apparatus, by means of which defects in a substrate can be recognized, and repaired under continuous control. For this purpose, the ion beam apparatus, in its beams path, after the ion source, is equipped with a mask exhibiting a preferrably circular hole and between ion source and mask with a controllable lens for the purpose of modification of the divergence angle under which the beam strikes the mask. The aperture of the mask is imaged upon the substrate. In this way the intensity of the ion beam may be varied for use in inspecting a substrate for defects and subsequently removing the detected defects.

Abstract translation: 本发明涉及一种离子束装置，通过该离子束装置可以识别基板中的缺陷并在连续控制下进行修复。 为此，离子束装置在离子源之后的光束路径上配备有显示出优选圆形孔的掩模，并且具有可控透镜的离子源与掩模之间，用于改变发散角的目的 光束撞击面罩。 掩模的孔径被成像在基底上。 以这种方式，可以改变离子束的强度以用于检查衬底的缺陷并随后去除检测到的缺陷。

公开(公告)号：US07041992B2

公开(公告)日：2006-05-09

申请号：US10969493

申请日：2004-10-20

Applicant: Gerhard Stengl ,  Elmar Platzgummer ,  Hans Loschner

Inventor： Gerhard Stengl ,  Elmar Platzgummer ,  Hans Loschner

IPC: H01J37/08 ,  G21G5/00

Abstract: A charged-particle multi-beam exposure apparatus (1) for exposure of a target (41) uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target (41). For each particle beam an illumination system (10), a pattern definition means (20) and a projection optics system (30) are provided. The illuminating system (10) and/or the projection optics system (30) comprise particle-optical lenses having lens elements (L1, L2, L3, L4, L5) common to more than one particle beam. The pattern definition means (20) defines a multitude of beamlets in the respective particle beam, forming its shape into a desired pattern which is projected onto the target (41), by allowing it to pass only through a plurality of apertures defining the shape of beamlets permeating said apertures, and further comprises a blanking means to switch off the passage of selected beamlets from the respective paths of the beamlets.

公开(公告)号：US20060068096A1

公开(公告)日：2006-03-30

申请号：US10301317

申请日：2002-11-20

Applicant: Xinhe Tang ,  Klaus Mauthner ,  Ernst Hammel ,  Hans Loschner ,  Elmar Platzgummer ,  Gerhard Stengl

Inventor： Xinhe Tang ,  Klaus Mauthner ,  Ernst Hammel ,  Hans Loschner ,  Elmar Platzgummer ,  Gerhard Stengl

IPC: C23C16/00

CPC classification number: C30B23/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C30B29/02 ,  C30B29/605 ,  C30B33/00 ,  Y10S427/102

Abstract: Method of synthesising carbon nano tubes (CNTs) on a catalyst layer formed on a support member, by catalytic deposition of carbon from a gaseous phase, whereby an ion beam is used prior to, during and/or after formation of said carbon nano tubes for modifying the physical, chemical and/or conductive properties of said carbon nano tubes.

Abstract translation: 在形成在支撑构件上的催化剂层上合成碳纳米管（CNT）的方法，通过从气相中催化沉积碳，由此在形成所述碳纳米管之前，期间和/或之后使用离子束， 改变所述碳纳米管的物理，化学和/或导电性质。

公开(公告)号：US06989546B2

公开(公告)日：2006-01-24

申请号：US09375627

申请日：1999-08-17

Applicant: Hans Loschner ,  Gerhard Stengl ,  Herbert Vonach ,  Elmar Platzgummer

Inventor： Hans Loschner ,  Gerhard Stengl ,  Herbert Vonach ,  Elmar Platzgummer

IPC: H01J37/08

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/153

Abstract: In a particle multibeam lithography apparatus an illumination system (242) having a particle source (203) produces an illuminating beam (205) of electrically charged particles, and a multibeam optical system (208) positioned after the illumination system (242) and comprising at least one aperture plate having an array of a plurality of apertures to form a plurality of sub-beams focuses the sub-beams onto the surface of a substrate (220), wherein for each sub-beam (207) a deflection unit (210) is positioned within the multibeam optical system and adapted to correct individual imaging aberrations of the respective sub-beam with respect to the desired target position and/or position the sub-beam during a writing process an the substrate surface. Preferably, for each sub-beam the respective aperture of the first aperture plate defines the size and shape of the sub-beam cross-section and the multibeam optical system produces a demagnified image of the aperture on the substrate surface, with a demagnification of at least 20:1.

Abstract translation: 在粒子多光刻光刻设备中，具有粒子源（203）的照明系统（242）产生带电粒子的照明光束（205）和位于照明系统（242）之后的多光束光学系统（208） 具有多个孔的阵列以形成多个子光束的至少一个孔板将所述子光束聚焦到衬底（220）的表面上，其中对于每个子光束（207），偏转单元（210） 被定位在多光束光学系统内，并且适于相对于期望的目标位置校正各个子光束的各个成像像差和/或在写入过程期间将子光束定位在衬底表面上。 优选地，对于每个子光束，第一孔径板的相应孔径限定了子束横截面的尺寸和形状，并且多光束光学系统产生基板表面上的孔的缩小图像， 至少20：1。

公开(公告)号：US20050104013A1

公开(公告)日：2005-05-19

申请号：US10969493

申请日：2004-10-20

Applicant: Gerhard Stengl ,  Elmar Platzgummer ,  Hans Loschner

Inventor： Gerhard Stengl ,  Elmar Platzgummer ,  Hans Loschner

IPC: G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  H01J37/08

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3177

Abstract: A charged-particle multi-beam exposure apparatus (1) for exposure of a target (41) uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target (41). For each particle beam an illumination system (10), a pattern definition means (20) and a projection optics system (30) are provided. The illuminating system (10) and/or the projection optics system (30) comprise particle-optical lenses having lens elements (L1, L2, L3, L4, L5) common to more than one particle beam. The pattern definition means (20) defines a multitude of beamlets in the respective particle beam, forming its shape into a desired pattern which is projected onto the target (41), by allowing it to pass only through a plurality of apertures defining the shape of beamlets permeating said apertures, and further comprises a blanking means to switch off the passage of selected beamlets from the respective paths of the beamlets.

Abstract translation: 用于曝光目标（41）的带电粒子多光束曝光装置（1）使用沿平行光束路径朝向目标（41）传播的多个带电粒子束。 对于每个粒子束，提供照明系统（10），图案定义装置（20）和投影光学系统（30）。 照明系统（10）和/或投影光学系统（30）包括具有多于一个粒子束共有的透镜元件（L 1，L 2，L 3，L 4，L 5）的粒子 - 光学透镜。 图案定义装置（20）在相应的粒子束中限定多个子束，通过使其仅通过限定形状的多个孔而将其形状形成为投射到目标（41）上的期望图案 子束穿透所述孔，并且还包括消隐装置，以切断所选子束从子束的相应路径的通过。

公开(公告)号：US06661015B2

公开(公告)日：2003-12-09

申请号：US09950140

申请日：2001-09-10

Applicant: Alfred Chalupka ,  Gerhard Stengl ,  Hans Loschner ,  Robert Nowak ,  Stefan Eder

Inventor： Alfred Chalupka ,  Gerhard Stengl ,  Hans Loschner ,  Robert Nowak ,  Stefan Eder

IPC: G01J100

CPC classification number: H01J37/3045 ,  H01J2237/31755

Abstract: In a particle projection lithography system, an alignment system is used to determine alignment parameters to measure the position and shape of an optical image of a pattern of structures formed in a mask and imaged onto a target by means of a broad particle beam, by means of an apparatus with a plurality of alignment marks adapted to produce secondary radiation upon irradiation with radiation of said particle beam. In order to allow for a variation of the alignment parameters along the optical axis, the alignment marks are positioned outside the aperture of the alignment system for the part of the beam that generates said optical image, arranged at positions to coincide with particle reference beams projected through reference beam forming structures provided on the mask while said optical image is projected onto the target, and situated on at least two different levels over the target as seen along the directions of the respective reference beams.

公开(公告)号：US4835392A

公开(公告)日：1989-05-30

申请号：US123128

申请日：1987-11-20

Applicant: Hans Loschner ,  Gerhard Stengl

Inventor： Hans Loschner ,  Gerhard Stengl

IPC: H01J37/08 ,  H01J37/12 ,  H01J37/147 ,  H01J37/30

CPC classification number: H01J37/1477 ,  H01J37/3007

Abstract: An ion-projecting apparatus which has between the ion source and the mask, directly proximal to the mask, at least one ion optical correction element in the form of a multipole with at least eight poles and so located that there is no other deflection means between the octapole and the mask.

Abstract translation: 一种离子投射装置，其在离子源和掩模之间具有直接接近掩模的至少一个离子光学校正元件，其具有至少八个极点的多极形式，并且位于两者之间， 八极和面具。