公开(公告)号：US20210257221A1

公开(公告)日：2021-08-19

申请号：US17307737

申请日：2021-05-04

Applicant: Applied Materials, Inc.

Inventor： Kaushal K. SINGH ,  Mei-Yee SHEK ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L21/383 ,  C23C14/58 ,  C23C14/48 ,  H01L21/44

Abstract: The present disclosure provides methods for performing an annealing process on a metal containing layer in TFT display applications, semiconductor or memory applications. In one example, a method of forming a metal containing layer on a substrate includes supplying an oxygen containing gas mixture on a substrate in a processing chamber, the substrate comprising a metal containing layer disposed on an optically transparent substrate, maintaining the oxygen containing gas mixture in the processing chamber at a process pressure between about 2 bar and about 50 bar, and thermally annealing the metal containing layer in the presence of the oxygen containing gas mixture.

公开(公告)号：US20210217585A1

公开(公告)日：2021-07-15

申请号：US17079783

申请日：2020-10-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Qiwei LIANG ,  Srinivas D. NEMANI ,  Chentsau Chris YING ,  Ellie Y. YIEH ,  Erica CHEN ,  Nithin Thomas ALEX

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/513

Abstract: A method and apparatus for depositing a carbon compound on a substrate includes using an inductively coupled plasma (ICP) chamber with a chamber body, a lid, an interior volume, a pumping apparatus, and a gas delivery system and a pedestal for supporting a substrate disposed within the interior volume of the ICP chamber, the pedestal has an upper portion formed from aluminum nitride with an upper surface that is configured to support and heat a substrate with embedded heating elements and a lower portion with a tube-like structure formed from aluminum nitride that is configured to support the upper portion and house electrodes for supplying power to the embedded heating elements of the upper portion, and the pedestal is configured to heat the substrate during deposition of a carbon compound film.

公开(公告)号：US20210041785A1

公开(公告)日：2021-02-11

申请号：US16989698

申请日：2020-08-10

Applicant: Applied Materials, Inc.

Inventor： Huixiong DAI ,  Mangesh Ashok BANGAR ,  Pinkesh Rohit SHAH ,  Christopher Siu Wing NGAI ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: G03F7/16 ,  G03F7/20

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. A method of processing a substrate is provided. The method includes applying a photoresist layer that includes a photoacid generator to a multi-layer disposed on the substrate. The multi-layer includes an underlayer. Further, the method includes exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process. A thermal energy is provided to the photoresist layer and the multi-layer in a post-exposure baking process. The multi-layer is disposed beneath the photoresist layer. An electric field or a magnetic field is applied to photoresist layer and the multi-layer while performing the post-exposure baking process. An additive within the underlayer is driven in a vertical direction into the photoresist layer. The additive assist in distribution of a photoacid throughout the photoresist layer during the post-exposure baking process.

公开(公告)号：US20190368035A1

公开(公告)日：2019-12-05

申请号：US16383354

申请日：2019-04-12

Applicant: Applied Materials, Inc.

Inventor： Sultan MALIK ,  Srinivas D. NEMANI ,  Qiwei LIANG ,  Adib KHAN ,  Maximillian CLEMONS

IPC: C23C16/44

Abstract: Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO2, Al2O3, AlON, HfO2, or Ni3Al, and can vary in thickness from about 80 nm to about 250 nm.

公开(公告)号：US20190301009A1

公开(公告)日：2019-10-03

申请号：US16433064

申请日：2019-06-06

Applicant: Applied Materials, Inc.

Inventor： Tobin KAUFMAN-OSBORN ,  Srinivas D. NEMANI ,  Ludovic GODET ,  Qiwei LIANG ,  Adib KHAN

IPC: C23C16/04 ,  H01J37/32 ,  H01L21/677 ,  H01L21/67 ,  H01L21/687 ,  C23C16/56 ,  C23C16/54 ,  C23C16/455 ,  C23C16/02

Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.

公开(公告)号：US20190194805A1

公开(公告)日：2019-06-27

申请号：US16290786

申请日：2019-03-01

Applicant: Applied Materials, Inc.

Inventor： Qiwei LIANG ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4412 ,  C23C16/45563 ,  C23C16/45574

Abstract: A process chamber is provided including a sidewall, a substrate support, and an exhaust vent disposed above the substrate support. A processing region is formed between the exhaust vent and substrate support, and the exhaust vent is coupled to an exhaust device configured to create a low pressure at the exhaust vent relative to the processing region. The process chamber further includes a gas ring including an annular shaped body having an inner surface that circumscribes an annular region. The gas ring further includes a plurality of first nozzles that are coupled to a first gas source and configured to deliver a first gas to the processing region. The gas ring further includes a plurality of second nozzles that are coupled to a second gas source and configured to deliver a second gas to the processing region.

公开(公告)号：US20190148144A1

公开(公告)日：2019-05-16

申请号：US16169610

申请日：2018-10-24

Applicant: Applied Materials, Inc.

Inventor： Biao LIU ,  Cheng PAN ,  Erica CHEN ,  Srinivas D. NEMANI ,  Chang KE ,  Lei ZHOU

IPC: H01L21/02 ,  H01L23/31 ,  B05D1/18

Abstract: Methods for depositing desired materials formed on certain locations of a substrate with desired materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate, selectively forming a passivation layer on a first material of the substrate, selectively forming self assembled monolayers on a second material of the substrate, and selectively forming a material layer on the passivation layer.

公开(公告)号：US20170358490A1

公开(公告)日：2017-12-14

申请号：US15332737

申请日：2016-10-24

Applicant: Applied Materials, Inc.

Inventor： Bencherki MEBARKI ,  Sean KANG ,  Keith Tatseun WONG ,  He REN ,  Mehul B. NAIK ,  Ellie Y. YIEH ,  Srinivas D. NEMANI

IPC: H01L21/768

CPC classification number: H01L21/76882 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/53214 ,  H01L23/53257

Abstract: Aspects of the disclosure include methods of treating a substrate to remove one or more of voids, seams, and grain boundaries from interconnects formed on the substrate. The method includes heating the substrate in an environment pressurized at supra-atmospheric pressure. In one example, the substrate may be heated in a hydrogen-containing atmosphere.

公开(公告)号：US20170352726A1

公开(公告)日：2017-12-07

申请号：US15173234

申请日：2016-06-03

Applicant: Applied Materials, Inc.

Inventor： Jie ZHOU ,  Zhong Qiang HUA ,  Chentsau YING ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L29/08 ,  H01L29/66 ,  H01L21/308 ,  H01L21/324 ,  H01L21/02 ,  H01L21/3065 ,  H01L29/78 ,  H01L29/04

CPC classification number: H01L29/0847 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02664 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67742 ,  H01L21/67766 ,  H01L29/045 ,  H01L29/66795 ,  H01L29/7851

Abstract: Methods for forming fin structures with desired profile and dimensions for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips are provided. The methods include a structure reshaping process to reshape a shaped structure, such as a diamond like structure formed on a fin structure. In one embodiment, a method for forming a structure on a substrate includes performing an epitaxial deposition process to form a shaped structure on a fin structure disposed on a substrate, performing a mask layer deposition process to form a mask layer having a first width on the shaped structure, and performing a mask trimming process to trim the mask layer from the first width from a second width.

公开(公告)号：US20170306491A1

公开(公告)日：2017-10-26

申请号：US15468758

申请日：2017-03-24

Applicant: Applied Materials, Inc.

Inventor： Qiwei LIANG ,  Adib KHAN ,  Tobin KAUFMAN-OSBORN ,  Srinivas D. NEMANI ,  Ludovic GODET

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/458 ,  C23C16/505 ,  C23C16/44

CPC classification number: C23C16/45565 ,  B05D1/185 ,  B05D1/60 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505

Abstract: Implementations described herein relate to apparatus and methods for self-assembled monolayer (SAM) deposition. Apparatus described herein includes processing chambers having various vapor phase delivery apparatus fluidly coupled thereto. SAM precursors may be delivered to process volumes of the chambers via various apparatus which is heated to maintain the precursors in vapor phase. In one implementation, a first ampoule or vaporizer configured to deliver a SAM precursor may be fluidly coupled to the process volume of a process chamber. A second ampoule or vaporizer configured to deliver a material different from the SAM precursor may also be fluidly coupled to the process volume of the process chamber.