公开(公告)号：US20210041785A1

公开(公告)日：2021-02-11

申请号：US16989698

申请日：2020-08-10

Applicant: Applied Materials, Inc.

Inventor： Huixiong DAI ,  Mangesh Ashok BANGAR ,  Pinkesh Rohit SHAH ,  Christopher Siu Wing NGAI ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: G03F7/16 ,  G03F7/20

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. A method of processing a substrate is provided. The method includes applying a photoresist layer that includes a photoacid generator to a multi-layer disposed on the substrate. The multi-layer includes an underlayer. Further, the method includes exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process. A thermal energy is provided to the photoresist layer and the multi-layer in a post-exposure baking process. The multi-layer is disposed beneath the photoresist layer. An electric field or a magnetic field is applied to photoresist layer and the multi-layer while performing the post-exposure baking process. An additive within the underlayer is driven in a vertical direction into the photoresist layer. The additive assist in distribution of a photoacid throughout the photoresist layer during the post-exposure baking process.

公开(公告)号：US20210088896A1

公开(公告)日：2021-03-25

申请号：US16983093

申请日：2020-08-03

Applicant: Applied Materials, Inc.

Inventor： Huixiong DAI ,  Mangesh Ashok BANGAR ,  Pinkesh Rohit SHAH ,  Srinivas D. NEMANI ,  Steven Hiloong WELCH ,  Christopher Siu Wing NGAI ,  Ellie Y. YIEH

IPC: G03F1/36 ,  G03F7/38

Abstract: Embodiments of the disclosure relate to lithography simulation and optical proximity correction. Field-guided post exposure bake processes have enabled improved lithography performance and various parameters of such processes are included in the optical proximity correction models generated in accordance with the embodiments described herein. An optical proximity correction model includes one or more parameters of anisotropic acid etching characteristics, ion generation and/or movement, electron movement, hole movement, and chemical reaction characteristics.